Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MW4IC2020N
Rev. 9, 5/2006
RF LDMOS Wideband Integrated
Power Amplifiers
The MW4IC2020N wideband integrated circuit is designed with on - chip
matching that makes it usable from 1600 to 2400 MHz. This multi - stage
structure is rated for 26 to 28 Volt operation and covers all typical cellular base
station modulation formats.
Final Application
• Typical Two - Tone Performance: VDD = 26 Volts, IDQ1 = 80 mA, IDQ2 =
200 mA, IDQ3 = 300 mA, Pout = 20 Watts PEP, Full Frequency Band
Power Gain — 29 dB
IMD — - 32 dBc
Drain Efficiency — 26% (at 1805 MHz) and 20% (at 1990 MHz)
Driver Applications
• Typical GSM EDGE Performance: VDD = 26 Volts, IDQ1 = 80 mA, IDQ2 =
230 mA, IDQ3 = 230 mA, Pout = 5 Watts Avg., Full Frequency Band
Power Gain — 29 dB
Spectral Regrowth @ 400 kHz Offset = - 66 dBc
Spectral Regrowth @ 600 kHz Offset = - 77 dBc
EVM — 1% rms
• Typical CDMA Performance: VDD = 26 Volts, IDQ1 = 80 mA, IDQ2 =
240 mA, IDQ3 = 250 mA, Pout = 1 Watt Avg., Full Frequency Band, IS - 95
CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13), Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 30 dB
ACPR @ 885 kHz Offset = - 61 dBc in 30 kHz Bandwidth
ALT1 @ 1.25 MHz Offset = - 69 dBc in 12.5 kHz Bandwidth
ALT2 @ 2.25 MHz Offset = - 59 dBc in 1 MHz Bandwidth
• Capable of Handling 3:1 VSWR, @ 26 Vdc, 1990 MHz, 8 Watts CW
Output Power
• Stable into a 3:1 VSWR. All Spurs Below - 60 dBc @ 100 mW to 8 W CW Pout.
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)
• Integrated Temperature Compensation with Enable/Disable Function
• On - Chip Current Mirror gm Reference FET for Self Biasing Application (1)
• Integrated ESD Protection
• 200°C Capable Plastic Package
• N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
VRD1
VRG1
VDS2
VDS1
3 Stages IC
RFin
VDS3/RFout
VGS1
VGS2
VGS3
Quiescent Current
Temperature Compensation
Figure 1. Functional Block Diagram
MW4IC2020NBR1
MW4IC2020GNBR1
1805- 1990 MHz, 20 W, 26 V
GSM/GSM EDGE, CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1329 - 09
TO - 272 WB - 16
PLASTIC
MW4IC2020NBR1
CASE 1329A - 03
TO - 272 WB - 16 GULL
PLASTIC
MW4IC2020GNBR1
GND
VDS2
VRD1
VRG1
VDS1
1
2
3
4
5
16
15
RFin
6
14
VDS3/
RFout
VGS1
VGS2
VGS3
GND
7
8
9
10
11
13
12
GND
GND
(Top View)
Note: Exposed backside flag is source
terminal for transistors.
Figure 2. Pin Connections
1. Refer to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1987.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MW4IC2020NBR1 MW4IC2020GNBR1
1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain- Source Voltage
VDSS
- 0.5, +65
Vdc
Gate- Source Voltage
VGS
- 0.5, +15
Vdc
Storage Temperature Range
Tstg
- 65 to +175
°C
Operating Junction Temperature
TJ
200
°C
Input Power
Pin
20
dBm
Symbol
Value (1)
Unit
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
RθJC
Stage 1
Stage 2
Stage 3
°C/W
10.5
5.1
2.3
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
2 (Minimum)
Machine Model
M3 (Minimum)
Charge Device Model
C5 (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
Package Peak Temperature
Unit
3
260
°C
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests (In Freescale Wideband 1805 - 1990 MHz Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ1 = 80 mA, IDQ2 = 200 mA,
IDQ3 = 300 mA, Pout = 20 W PEP, f1 = 1990 MHz, f2 = 1990.1 MHz and f1 = 1805 MHz, f2 = 1805.1 MHz, Two - Tone CW
Power Gain
Gps
Drain Efficiency
f1 = 1805 MHz, f2 = 1805.1 MHz
f1 = 1990 MHz, f2 = 1990.1 MHz
ηD
27
29
24
18
26
20
—
dB
—
%
Input Return Loss
IRL
—
—
- 10
dB
Intermodulation Distortion
IMD
—
- 32
- 27
dBc
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ1 = 80 mA, IDQ2 = 200 mA, IDQ3 = 300 mA,
1805 MHz<Frequency<1990 MHz, 1 - Tone
Saturated Pulsed Output Power
(f = 1 kHz, Duty Cycle 10%)
Psat
—
33
—
W
Quiescent Current Accuracy over Temperature ( - 10 to 85°C) (2)
ΔIQT
—
±5
—
%
Gain Flatness in 30 MHz Bandwidth @ Pout = 1 W CW
GF
—
0.15
—
dB
Deviation from Linear Phase in 30 MHz Bandwidth @ Pout = 1 W CW
1805- 1880 MHz
1930- 1990 MHz
Φ
—
—
°
Delay
—
1.8
—
ns
ΦΔ
—
±10
—
°
Delay @ Pout = 1 W CW Including Output Matching
Part - to - Part Phase Variation @ Pout = 1 W CW
±0.5
±0.2
1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
2. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family. Go to http://www.freescale.com/rf. Select
Documentation/Application Notes - AN1977.
(continued)
MW4IC2020NBR1 MW4IC2020GNBR1
2
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical CDMA Performances (In Modified CDMA Test Fixture, 50 ohm system) VDD = 26 Vdc, DQ1 = 80 mA, IDQ2 = 240 mA, IDQ3 = 250 mA,
Pout = 1 W Avg., I1930 MHz<Frequency<1990 MHz, 1 - Tone, 9 Channel Forward Model (Pilot, Paging, Sync, Traffic Codes 8 through 13).
Peak/Avg. Ratio 9.8 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
—
30
—
dB
Drain Efficiency
ηD
—
5
—
%
Adjacent Channel Power Ratio (±885 kHz in 30 kHz Bandwidth)
ACPR
—
- 61
—
dBc
Alternate 1 Channel Power Ratio (±1.25 MHz in 12.5 kHz Bandwidth)
ALT1
—
- 69
—
dBc
Alternate 2 Channel Power Ratio (±2.25 MHz in 1 MHz Bandwidth)
ALT2
—
- 59
—
dBc
Typical GSM EDGE Performances (In Modified GSM EDGE Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ1 = 80 mA,
IDQ2 = 230 mA, IDQ3 = 230 mA, Pout = 5 W Avg., 1805 MHz<Frequency<1990 MHz
Power Gain
Gps
—
29
—
dB
Drain Efficiency
ηD
—
15
—
%
Error Vector Magnitude
EVM
—
1
—
% rms
Spectral Regrowth at 400 kHz Offset
SR1
—
- 66
—
dBc
Spectral Regrowth at 600 kHz Offset
SR2
—
- 77
—
dBc
MW4IC2020NBR1 MW4IC2020GNBR1
RF Device Data
Freescale Semiconductor
3
VD3
VD2
+
VD1
C2
1
2
3 NC
4 NC
5
C5
+
C1
RF
INPUT
C6
DUT
16
C8
NC 15
Z2
Z1
+
14
C3
Z9
Z3
C9
Z4
Z5
Z6
C10
C11
C12
Z7
Z8
RF
OUTPUT
6
C7
VG1
R1
VG2
R2
7 NC
8
9
10
11
Quiescent Current
Temperature Compensation
C13 C14
NC 13
12
C4
VG3
R3
Z1
Z2
Z3
Z4
Z5
1.820″ x 0.087″ Microstrip
0.245″ x 0.087″ Microstrip
0.345″ x 0.236″ Microstrip
0.327″ x 0.087″ Microstrip
0.271″ x 0.087″ Microstrip
Z6
Z7
Z8
Z9
PCB
0.303″ x 0.087″ Microstrip
0.640″ x 0.087″ Microstrip
0.334″ x 0.087″ Microstrip
1.231″ x 0.043″ Microstrip
Taconic TLX8 - 0300, 0.030″, εr = 2.55
Figure 3. MW4IC2020NBR1(GNBR1) Test Circuit Schematic
Table 6. MW4IC2020NBR1(GNBR1) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2, C3
10 μF, 35 V Tantalum Capacitors
TAJE226M035
AVX
C4
220 nF Chip Capacitor (1206)
12065C224K28
AVX
C5, C6, C8
6.8 pF 100B Chip Capacitors
100B6R8CW
ATC
C7
0.5 pF 100B Chip Capacitor
100B0R5BW
ATC
C9, C11
1.8 pF 100B Chip Capacitors
100B1R8BW
ATC
C10
2.2 pF 100B Chip Capacitor
100B2R2BW
ATC
C12
1 pF 100B Chip Capacitor
100B1R0BW
ATC
C13
0.3 pF 100B Chip Capacitor
100B0R3BW
ATC
C14
10 pF 100B Chip Capacitor
100B100GW
ATC
R1, R2, R3
1.8 kW Chip Resistors (1206)
MW4IC2020NBR1 MW4IC2020GNBR1
4
RF Device Data
Freescale Semiconductor
C2
C3
VD2
MW4IC2020
Rev 1
VD1
C8
VD3
C5
C1
C6
C14
C7
C9
C10
C11 C12
C13
C4
VG1
R1
R2
VG2
GND
R3
VG3
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 4. MW4IC2020NBR1(GNBR1) Test Circuit Component Layout
MW4IC2020NBR1 MW4IC2020GNBR1
RF Device Data
Freescale Semiconductor
5
32
0
Gps
30
28
−10
26
IRL
24
22
20
−5
−15
−20
ηD
VDD = 26 Vdc, Pout = 20 W (PEP)
IDQ1 = 80 mA, IDQ2 = 200 mA, IDQ3 = 300 mA
100 kHz Tone Spacing
−25
−30
IMD
18
−35
16
1800
1850
1900
IMD, INTERMODULATION DISTORTION (dBc)
IRL, INPUT RETURN LOSS (dB)
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
TYPICAL CHARACTERISTICS
−40
2000
1950
f, FREQUENCY (MHz)
−10
VDD = 26 Vdc
IDQ1 = 80 mA, IDQ2 = 200 mA, IDQ3 = 300 mA
f = 1840 MHz, 100 kHz Tone Spacing
3rd Order
−30
5th Order
−40
7th Order
−50
−60
−70
−80
0.1
10
3rd Order
5th Order
−40
7th Order
−50
−60
−70
0.1
1
100
10
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Intermodulation Distortion Products
versus Output Power @ 1840 MHz
Figure 7. Intermodulation Distortion Products
versus Output Power @ 1960 MHz
36
35
31
30
TC = −30_C
29
24
18
ηD
25_C
27
18
TC = −30_C
12
25
6
15
0
10
100
25_C
−30_C
31
12
25_C
ηD
29
9
85_C
27
6
85_C
25
85_C
1
Gps
33
ηD, DRAIN EFFICIENCY (%)
G ps , POWER GAIN (dB)
VDD = 26 Vdc
IDQ1 = 80 mA, IDQ2 = 200 mA, IDQ3 = 300 mA
f = 1960 MHz
23
0.1
VDD = 26 Vdc
IDQ1 = 80 mA, IDQ2 = 200 mA, IDQ3 = 300 mA
f = 1960 MHz, 100 kHz Tone Spacing
−30
100
Gps
G ps , POWER GAIN (dB)
−20
−80
1
35
33
−10
23
0.1
VDD = 26 Vdc, IDQ1 = 80 mA
3
IDQ2 = 240 mA, IDQ3 = 250 mA
f = 1960 MHz, 1−Carrier N−CDMA
0
1
10
Pout, OUTPUT POWER (WATTS) CW
Pout, OUTPUT POWER (WATTS) AVG.
Figure 8. Power Gain and Drain Efficiency
versus Output Power
Figure 9. Power Gain and Drain Efficiency
versus Output Power
ηD, DRAIN EFFICIENCY (%)
−20
IMD, INTERMODULATION DISTORTION (dBc)
IMD, INTERMODULATION DISTORTION (dBc)
Figure 5. Two - Tone Wideband Performance
MW4IC2020NBR1 MW4IC2020GNBR1
6
RF Device Data
Freescale Semiconductor
85_C
VDD = 26 Vdc, IDQ1 = 80 mA
IDQ2 = 240 mA, IDQ3 = 250 mA
−50
f = 1960 MHz, Single−Carrier N−CDMA
TC = 25_C
−30_C
−55
−30_C
25_C
−60
85_C
ACPR
−65
ALT2
−30_C
−70
ALT1
85_C
−75
0.1
34
25_C
30
28
85_C
26
VDD = 26 Vdc
Pout = 20 W (PEP)
IDQ1 = 80 mA, IDQ2 = 200 mA, IDQ3 = 300 mA
24
25_C
1
22
1800
10
1850
1900
2000
1950
Pout, OUTPUT POWER (WATTS) AVG.
f, FREQUENCY (MHz)
Figure 10. Alternate Channel Power Ratio,
Alternate 1 and 2 Channel Power Ratio
versus Output Power
Figure 11. Power Gain versus Frequency
4
VDD = 26 Vdc
3.5 IDQ1 = 80 mA, IDQ2 = 230 mA, IDQ3 = 230 mA
EDGE Modulation, f = 1840 MHz
3
TC = 85_C
25_C
−30_C
2.5
2
1.5
1
0.5
0
4
3.5
VDD = 26 Vdc
IDQ1 = 80 mA, IDQ2 = 230 mA, IDQ3 = 230 mA
EDGE Modulation, f = 1960 MHz
3
TC = 85_C
25_C
−30_C
2.5
2
1.5
1
0.5
0
0.1
1
100
10
1
0.1
10
100
Pout, OUTPUT POWER (WATTS) AVG.
Pout, OUTPUT POWER (WATTS) AVG.
Figure 12. EVM versus Output Power @ 1840 MHz
Figure 13. EVM versus Output Power @ 1960 MHz
−50
TC = 25_C
−55
−60
85_C
VDD = 26 Vdc
IDQ1 = 80 mA, IDQ2 = 230 mA, IDQ3 = 230 mA
EDGE Modulation, f = 1840 MHz
−65
−30_C
85_C
SR 400 kHz
25_C
−70
−30_C
−75
SR 600 kHz
−80
−85
0.1
1
10
100
SPECTRAL REGROWTH @ 400 kHz AND 600 kHz (dBc)
SPECTRAL REGROWTH @ 400 kHz AND 600 kHz (dBc)
TC = −30_C
32
G ps , POWER GAIN (dB)
−45
EVM, ERROR VECTOR MAGNITUDE (% rms)
EVM, ERROR VECTOR MAGNITUDE (% rms)
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
ALT 1 & 2, ALTERNATE 1 & 2 CHANNEL POWER RATIO (dB
TYPICAL CHARACTERISTICS
−50
VDD = 26 Vdc
−55 IDQ1 = 80 mA, IDQ2 = 230 mA, IDQ3 = 230 mA
EDGE Modulation, f = 1960 MHz
−60
−30_C
TC = 25_C
−65
85_C
SR 400 kHz
−70
85_C
25_C
−75
−30_C
SR 600 kHz
−80
−85
0.1
1
10
100
Pout, OUTPUT POWER (WATTS) AVG.
Pout, OUTPUT POWER (WATTS) AVG.
Figure 14. Spectral Regrowth at 400 and 600 kHz
versus Output Power @ 1840 MHz
Figure 15. Spectral Regrowth at 400 and 600 kHz
versus Output Power @ 1960 MHz
MW4IC2020NBR1 MW4IC2020GNBR1
RF Device Data
Freescale Semiconductor
7
TYPICAL CHARACTERISTICS
MTTF FACTOR (HOURS X AMPS 2 )
1.E+09
1.E+08
3rd Stage
2nd Stage
1.E+07
1st Stage
1.E+06
1.E+05
1.E+04
90
100
110
120
130
140
150
160
170
180 190
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
Figure 16. MTTF Factor versus Junction Temperature
MW4IC2020NBR1 MW4IC2020GNBR1
8
RF Device Data
Freescale Semiconductor
f = 1805 MHz
f = 1990 MHz
f = 1805 MHz
f = 1990 MHz
Zload
Zin
Zo = 50 Ω
VDD = 26 V, IDQ1 = 80 mA, IDQ2 = 200 mA, IDQ3 = 300 mA, Pout = 20 W PEP
Zin
f
MHz
Zin
Ω
Zload
Ω
1805
40.00 + j6.50
8.75 - j1.42
1842
40.00 + j2.00
7.00 - j2.70
1880
40.00 - j1.50
5.90 - j2.97
1930
40.00 - j1.80
5.46 - j3.20
1960
40.00 - j2.10
4.30 - j3.35
1990
40.00 - j2.60
4.45 - j3.30
= Device input impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under Test
Z
in
Z
load
Figure 17. Series Equivalent Input and Load Impedance
MW4IC2020NBR1 MW4IC2020GNBR1
RF Device Data
Freescale Semiconductor
9
PACKAGE DIMENSIONS
MW4IC2020NBR1 MW4IC2020GNBR1
10
RF Device Data
Freescale Semiconductor
MW4IC2020NBR1 MW4IC2020GNBR1
RF Device Data
Freescale Semiconductor
11
MW4IC2020NBR1 MW4IC2020GNBR1
12
RF Device Data
Freescale Semiconductor
MW4IC2020NBR1 MW4IC2020GNBR1
RF Device Data
Freescale Semiconductor
13
MW4IC2020NBR1 MW4IC2020GNBR1
14
RF Device Data
Freescale Semiconductor
MW4IC2020NBR1 MW4IC2020GNBR1
RF Device Data
Freescale Semiconductor
15
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MW4IC2020NBR1 MW4IC2020GNBR1
Document Number: MW4IC2020N
Rev. 9, 5/2006
16
RF Device Data
Freescale Semiconductor