MOTOROLA Freescale Semiconductor, Inc. Order this document by MW4IC2230/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line Freescale Semiconductor, Inc... RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2230 wideband integrated circuit is designed for W - CDMA base station applications. It uses Motorola’s newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi - stage structure. Its wideband On - Chip design makes it usable from 1600 to 2400 MHz. The linearity performances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, CDMA and W - CDMA. Final Application Typical Single - carrier W - CDMA Performance: VDD = 28 Volts, IDQ1 = 60 mA, IDQ2 = 350 mA, Pout = 5 Watts Avg., f = 2140 MHz, Channel Bandwidth = 3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 31 dB Drain Efficiency — 15% ACPR @ 5 MHz = - 45 dBc @ 3.84 MHz Bandwidth Driver Application Typical Single - carrier W - CDMA Performance: VDD = 28 Volts, IDQ1 = 60 mA, IDQ2 = 350 mA, Pout = 0.4 Watts Avg., f = 2140 MHz, Channel Bandwidth = 3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 31.5 dB ACPR @ 5 MHz = - 53.5 dBc @ 3.84 MHz Bandwidth • Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 5 Watts CW Output Power • Characterized with Series Equivalent Large - Signal Impedance Parameters • On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output) • Integrated Temperature Compensation with Enable/Disable Function • On - Chip Current Mirror gm Reference FET for Self Biasing Application (1) • Integrated ESD Protection • Also Available in Gull Wing for Surface Mount • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel MW4IC2230MBR1 MW4IC2230GMBR1 2110 - 2170 MHz, 30 W, 28 V SINGLE W - CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS CASE 1329 - 09 TO - 272 WB - 16 PLASTIC MW4IC2230MBR1 CASE 1329A - 03 TO - 272 WB - 16 GULL PLASTIC MW4IC2230GMBR1 PIN CONNECTIONS VRD1 VRG1 VDS2 VDS1 3 Stages IC RFin VGS1 VGS2 VGS3 GND VDS2 VRD1 VRG1 VDS1 1 2 3 4 5 16 15 RFin 6 14 VDS3/ RFout VGS1 VGS2 VGS3 GND 7 8 9 10 11 13 12 GND VDS3/RFout Quiescent Current Temperature Compensation Functional Block Diagram GND (Top View) NOTE: Exposed backside flag is source terminal for transistors. (1) Refer to AN1987/D, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.motorola.com/semiconductors/rf . Select Documentation/Application Notes - AN1987. REV 2 MOTOROLA RF DEVICE DATA Motorola, Inc. 2004 MW4IC2230MBR1 MW4IC2230GMBR1 1 For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. MAXIMUM RATINGS Symbol Value Unit Drain - Source Voltage Rating VDSS 65 Vdc Gate - Source Voltage VGS - 0.5, +8 Vdc Storage Temperature Range Tstg - 65 to +175 °C Operating Channel Temperature TJ 175 °C Input Power Pin 20 dBm Symbol Value (1) Unit THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case RθJC Stage 1 Stage 2 Stage 3 °C/W 10.5 5.1 2.3 Freescale Semiconductor, Inc... ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 2 (Minimum) Machine Model M3 (Minimum) Charge Device Model C5 (Minimum) MOISTURE SENSITIVITY LEVEL Test Methodology Rating Per JESD 22 - A113 3 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 60 mA, IDQ2 = 350 mA, IDQ3 = 265 mA, Pout = 0.4 W Avg., f = 2110 MHz, f = 2170 MHz, Single - carrier W - CDMA. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Peak/Avg. Ratio = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Gps 29 31.5 — dB Input Return Loss IRL — - 25 - 10 dB — — - 53.5 - 52 - 50 — Adjacent Channel Power Ratio ACPR Pout = 0.4 W Avg. Pout = 1.26 W Avg. dBc Stability (10 mW<Pout<5 W CW, Load VSWR = 3:1, All Phase Angles, 24 V<Vds<28 V) No Spurious > - 60 dBc TYPICAL PERFORMANCES (In Motorola Test Fixture tuned for 0.4 W Avg. W - CDMA driver) VDD = 28 Vdc, IDQ1 = 60 mA, IDQ2 = 350 mA, IDQ3 = 265 mA, 2110 MHz<Frequency <2170 MHz Saturated Pulsed Output Power (f = 1 kHz, Duty Cycle 10%) Psat — 43 — Watts Quiescent Current Accuracy over Temperature ( - 10 to 85°C) ∆IQT — ±5 — % Gain Flatness in 30 MHz Bandwidth GF — 0.13 — dB Deviation from Linear Phase in 30 MHz Bandwidth Φ — ±1 — ° Delay — 1.6 — ns Φ∆ — ±15 — ° Delay @ Pout = 0.4 W CW Including Output Matching Part to Part Phase Variation (1) MTTF calculator available at http://www.motorola.com/semiconductors/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. (continued) MW4IC2230MBR1 MW4IC2230GMBR1 MOTOROLA RF DEVICE DATA For More Information On This Product, 2 Go to: www.freescale.com Freescale Semiconductor, Inc. ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit TYPICAL PERFORMANCES (In Motorola Reference Application Circuit tuned for 2 - carrier W - CDMA signal) VDD = 28 Vdc, Pout = 0.4 W Avg., IDQ1 = 60 mA, IDQ2 = 400 mA, IDQ3 = 245 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Channel Bandwidth @ ±10 MHz Offset. Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Gps — 31.5 — dB Intermodulation Distortion IM3 — - 52 — dBc ACPR — - 55 — dBc IRL — - 26 — dB Adjacent Channel Power Ratio Freescale Semiconductor, Inc... Input Return Loss MOTOROLA RF DEVICE DATA MW4IC2230MBR1 MW4IC2230GMBR1 3 For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. VD3 VD2 + VD1 C2 + C1 C6 RF INPUT C5 1 2 3 NC 4 NC 5 DUT + 16 NC 15 C7 Z2 C3 C9 14 Z4 Z1 Z5 Z6 Z7 RF OUTPUT 6 Freescale Semiconductor, Inc... C10 VG1 R1 VG2 R2 VG3 R3 7 NC 8 9 10 11 Quiescent Current Temperature Compensation NC 13 C11 C12 Z3 12 + C8 Z1 Z2, Z3 Z4 Z5 2.180″ 0.040″ 0.350″ 0.420″ x 0.090″ Microstrip x 0.430″ Microstrip x 0.240″ Microstrip x 0.090″ Microstrip Z6 Z7 PCB C4 1.120″ x 0.090″ Microstrip 0.340″ x 0.090″ Microstrip Taconic TLX8 - 0300, 0.030″, εr = 2.55 Figure 1. MW4IC2230MBR1(GMBR1) Test Circuit Schematic Table 1. MW4IC2230MBR1(GMBR1) Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2, C3, C4 10 µF, 35 V Tantalum Capacitors TAJD106K035 AVX C5, C6, C7, C8, C12 8.2 pF 100B Chip Capacitors 100B8R2CW ATC C9, C10 1.8 pF 100B Chip Capacitors 100B1R8BW ATC C11 0.3 pF 100B Chip Capacitor 100B0R3BW ATC R1, R2, R3 1.8 kW Chip Resistors (1206) MW4IC2230MBR1 MW4IC2230GMBR1 MOTOROLA RF DEVICE DATA For More Information On This Product, 4 Go to: www.freescale.com Freescale Semiconductor, Inc. C2 C3 VD2 MW4IC2230 Rev 1 VD1 VD3 C5 C7 C1 C6 C12 C9 Freescale Semiconductor, Inc... C10 C11 C8 R1 VG1 GND R3 R2 VG2 VG3 C4 Figure 2. MW4IC2230MBR1(GMBR1) Test Circuit Component Layout MOTOROLA RF DEVICE DATA MW4IC2230MBR1 MW4IC2230GMBR1 5 For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. 32 0 Gps G ps , POWER GAIN (dB) 31 −10 30 −20 IRL 29 −30 VDD = 28 Vdc Pout = 26 dBm (Avg.) IDQ1 = 60 mA, IDQ2 = 350 mA, IDQ3 = 265 mA 1−Carrier W−CDMA 28 −40 27 −50 ACPR 26 2050 −60 2100 2150 IRL, INPUT RETURN LOSS (dB) ACPR, ADJACENT CHANNEL POWER RATIO (dBc) TYPICAL CHARACTERISTICS 2200 0 Gps 31 −10 −20 30 IRL −30 29 −40 ACPR 27 26 2050 −50 −60 2100 2150 −40 VDD = 28 Vdc IDQ1 = 60 mA, IDQ2 = 350 mA, IDQ3 = 265 mA f = 2140 MHz, 1−Carrier W−CDMA −45 25_C −50 −30_C −55 −60 0.1 2200 1 f, FREQUENCY (MHz) G ps , POWER GAIN (dB) Figure 5. Adjacent Channel Power Ratio versus Output Power 33 0 32 −10 Gps 31 IRL 30 VDD = 28 Vdc Pout = 26 dBm (Avg.) IDQ1 = 60 mA, IDQ2 = 400 mA, IDQ3 = 245 mA 2−Carrier W−CDMA 28 27 2050 10 Pout, OUTPUT POWER (WATTS) AVG. Figure 4. Single - Carrier W - CDMA Wideband Performance 29 TC = 85_C −20 −30 −40 IMD3 −50 ACPR 2100 2150 −60 IRL, INPUT RETURN LOSS (dB) ACPR, ADJACENT CHANNEL POWER RATIO (dBc) IMD3, INTERMODULATION DISTORTION (dBc) 28 VDD = 28 Vdc Pout = 31 dBm (Avg.) IDQ1 = 60 mA, IDQ2 = 350 mA, IDQ3 = 265 mA 1−Carrier W−CDMA ACPR, ADJACENT CHANNEL POWER RATIO (dBc) 32 IRL, INPUT RETURN LOSS (dB) ACPR, ADJACENT CHANNEL POWER RATIO (dBc) Figure 3. Single - Carrier W - CDMA Wideband Performance G ps , POWER GAIN (dB) Freescale Semiconductor, Inc... f, FREQUENCY (MHz) 2200 f, FREQUENCY (MHz) Figure 6. 2 - Carrier W - CDMA Wideband Performance MW4IC2230MBR1 MW4IC2230GMBR1 MOTOROLA RF DEVICE DATA For More Information On This Product, 6 Go to: www.freescale.com Freescale Semiconductor, Inc. 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 2.00 P3dB = 46.3 dBm (43 W) VDD = 28 Vdc, Small Signal IDQ1 = 60 mA, IDQ2 = 350 mA, IDQ3 = 265 mA 1.95 1.90 P1dB = 45.3 dBm (34 W) Actual 1.85 4 6 8 10 12 14 16 18 20 22 1.80 1.75 1.70 1.65 VDD = 28 Vdc IDQ1 = 60 mA, IDQ2 = 350 mA, IDQ3 = 265 mA, f = 2140 MHz Pulsed CW, Frequency 1 kHz, Duty Cycle 10% 2 1.60 1.55 1.50 1950 24 2000 2050 2100 2150 2200 2250 Pin, INPUT POWER (dBm) f, FREQUENCY (MHz) Figure 7. Output Power versus Input Power Figure 8. Delay versus Frequency 2300 1.E+09 MTTF FACTOR (HOURS X AMPS 2 ) Freescale Semiconductor, Inc... Ideal DELAY (ns) Pout , OUTPUT POWER (dBm) TYPICAL CHARACTERISTICS 3rd Stage 1.E+08 2nd Stage 1.E+07 1st Stage 1.E+06 1.E+05 1.E+04 90 100 110 120 130 140 150 160 170 180 190 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 9. MTTF Factor versus Temperature Junction MOTOROLA RF DEVICE DATA MW4IC2230MBR1 MW4IC2230GMBR1 7 For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. Zin* Zload* f = 2050 MHz f = 2230 MHz f = 2050 MHz f = 2230 MHz Freescale Semiconductor, Inc... Zo = 50 Ω VDD = 28 V, IDQ1 = 60 mA, IDQ2 = 350 mA, IDQ3 = 265 mA, Pout = 26 dBm Zin f MHz Zin Ω Zload Ω 2050 42.18 + j1.49 8.52 - j0.46 2110 41.06 - j1.30 8.58 - j0.20 2140 40.49 - j2.42 8.63 - j0.09 2170 40.05 - j3.45 8.69 - j0.01 2230 39.29 - j6.31 8.81 + j0.04 = Device input impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Z in Z load Figure 10. Series Equivalent Input and Load Impedance MW4IC2230MBR1 MW4IC2230GMBR1 MOTOROLA RF DEVICE DATA For More Information On This Product, 8 Go to: www.freescale.com Freescale Semiconductor, Inc. Freescale Semiconductor, Inc... NOTES MOTOROLA RF DEVICE DATA MW4IC2230MBR1 MW4IC2230GMBR1 9 For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. PACKAGE DIMENSIONS r1 C A B 2X E1 B aaa A NOTE 6 M PIN ONE INDEX 4X aaa M b1 C A 6X e1 4X e2 2X e3 e Freescale Semiconductor, Inc... D1 aaa b3 aaa M C A b2 C A D M M 10X b aaa M C A ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ N E VIEW Y - Y DATUM PLANE H A c1 C SEATING PLANE F Y ZONE "J" E2 Y A1 7 A2 NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 3. DATUM PLANE −H− IS LOCATED AT TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 (0.15) PER SIDE. DIMENSIONS "D" AND "E1" DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE −H−. 5. DIMENSIONS "b", "b1", "b2" AND "b3" DO NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 (0.13) TOTAL IN EXCESS OF THE "b", "b1", "b2" AND "b3" DIMENSIONS AT MAXIMUM MATERIAL CONDITION. 6. HATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SLUG. 7. DIM A2 APPLIES WITHIN ZONE "J" ONLY. CASE 1329 - 09 ISSUE J TO - 272 WB - 16 PLASTIC MW4IC2230MBR1 DIM A A1 A2 D D1 E E1 E2 F M N b b1 b2 b3 c1 e e1 e2 e3 r1 aaa INCHES MIN MAX .100 .104 .038 .044 .040 .042 .928 .932 .810 BSC .551 .559 .353 .357 .346 .350 .025 BSC .600 −−− .270 −−− .011 .017 .037 .043 .037 .043 .225 .231 .007 .011 .054 BSC .040 BSC .224 BSC .150 BSC .063 .068 .004 MILLIMETERS MIN MAX 2.54 2.64 0.96 1.12 1.02 1.07 23.57 23.67 20.57 BSC 14.00 14.20 8.97 9.07 8.79 8.89 0.64 BSC 15.24 −−− 6.86 −−− 0.28 0.43 0.94 1.09 0.94 1.09 5.72 5.87 .18 .28 1.37 BSC 1.02 BSC 5.69 BSC 3.81 BSC 1.6 1.73 .10 MW4IC2230MBR1 MW4IC2230GMBR1 MOTOROLA RF DEVICE DATA For More Information On This Product, 10 Go to: www.freescale.com Freescale Semiconductor, Inc. E1 r1 C A B 2X aaa A B M 4X PIN ONE INDEX aaa M b1 C A ÉÉÉÉÉÉ ÉÉÉÉÉÉ ÉÉÉÉÉÉ ÉÉÉÉÉÉ ÉÉÉÉÉÉ ÉÉÉÉÉÉ ÉÉÉÉÉÉ ÉÉÉÉÉÉ ÉÉÉÉÉÉ ÉÉÉÉÉÉ ÉÉÉÉÉÉ ÉÉÉÉÉÉ 6X e1 4X e2 2X e3 b3 aaa M C A e D1 Freescale Semiconductor, Inc... aaa M D M b2 C A b C A 10X aaa M NOTE 6 N E2 VIEW Y - Y E DETAIL Y DATUM PLANE H A2 A c1 E2 Y Y L1 t L GAGE PLANE A1 DETAIL Y C SEATING PLANE NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 3. DATUM PLANE −H− IS LOCATED AT TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 (0.15) PER SIDE. DIMENSIONS "D" AND "E1" DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE −H−. 5. DIMENSIONS "b", "b1", "b2" AND "b3" DO NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 (0.13) TOTAL IN EXCESS OF THE "b", "b1", "b2" AND "b3" DIMENSIONS AT MAXIMUM MATERIAL CONDITION. 6. HATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SINK. DIM A A1 A2 D D1 E E1 E2 L L1 M N b b1 b2 b3 c1 e e1 e2 e3 r1 t aaa INCHES MIN MAX .100 .104 .001 .004 .099 .110 .928 .932 .810 BSC .429 .437 .353 .357 .346 .350 .018 .024 .01 BSC .600 −−− .270 −−− .011 .017 .037 .043 .037 .043 .225 .231 .007 .011 .054 BSC .040 BSC .224 BSC .150 BSC .063 .068 2° 8° .004 MILLIMETERS MIN MAX 2.54 2.64 0.02 0.10 2.51 2.79 23.57 23.67 20.57 BSC 10.90 11.10 8.97 9.07 8.79 8.89 4.90 5.06 0.25 BSC 15.24 −−− 6.86 −−− 0.28 0.43 0.94 1.09 0.94 1.09 5.72 5.87 .18 .28 1.37 BSC 1.02 BSC 5.69 BSC 3.81 BSC 1.6 1.73 2° 8° .10 CASE 1329A - 03 ISSUE B TO - 272 WB - 16 GULL PLASTIC MW4IC2230GMBR1 MOTOROLA RF DEVICE DATA MW4IC2230MBR1 MW4IC2230GMBR1 11 For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc... Freescale Semiconductor, Inc. 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Box 5405, Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan 81-3-3440-3569 ASIA /PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 HOME PAGE: http://motorola.com/semiconductors MW4IC2230MBR1 MW4IC2230GMBR1 MOTOROLA RF DEVICE DATA ◊For More Information On This Product, MW4IC2230/D 12 Go to: www.freescale.com