MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF9130L/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line MRF9130LR3 MRF9130LSR3 RF Power Field Effect Transistors Freescale Semiconductor, Inc... N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. • Typical Performance for GSM Frequencies, 921 to 960 MHz, 28 Volts Output Power @ P1dB — 135 Watts Power Gain — 16.5 dB @ 130 Watts Output Power Efficiency — 48% @ 130 Watts Output Power • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 5:1 VSWR, @ 28 Vdc, All Frequency Band, 130 Watts CW Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Low Gold Plating Thickness on Leads, 40µ″ Nominal. • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. GSM/GSM EDGE 921 - 960 MHz, 130 W, 28 V LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF9130LR3 CASE 465A - 06, STYLE 1 NI - 780S MRF9130LSR3 MAXIMUM RATINGS Rating Symbol Value Unit Drain - Source Voltage VDSS 65 Vdc Gate - Source Voltage VGS - 0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 298 1.7 Watts W/°C Storage Temperature Range Tstg - 65 to +200 °C Operating Junction Temperature TJ 200 °C Symbol Value Unit RθJC 0.6 °C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Class 1 (Minimum) Machine Model M2 (Minimum) Charge Device Model C7 (Minimum) NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 2 MOTOROLA RF DEVICE DATA Motorola, Inc. 2004 For More Information On This Product, Go to: www.freescale.com MRF9130LR3 MRF9130LSR3 1 Freescale Semiconductor, Inc. ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vds, VGS = 0 Vdc) IDSS — — 10 µAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vds, VGS = 0 Vdc) IDSS — — 1 µAdc Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 µAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 450 µAdc) VGS(th) 2 3 4 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1000 mAdc) VGS(Q) — 3.6 — Vdc Drain - Source On - Voltage (VGS = 10 Vdc, ID = 3 Adc) VDS(on) — 0.2 0.4 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 9 Adc) gfs — 12 — S Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 110 — pF Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 4.4 — pF P1dB 120 135 — W Common - Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 130 W, IDQ = 1000 mA, f = 921 and 960 MHz) Gps 15.5 16.5 — dB Drain Efficiency (VDD = 28 Vdc, Pout = 130 W, IDQ = 1000 mA, f = 921 and 960 MHz) η 43 48 — % Input Return Loss (VDD = 28 Vdc, Pout = 130 W, IDQ = 1000 mA, f = 921 and 960 MHz) IRL — - 12 -9 dB Output Mismatch Stress (VDD = 28 Vdc, Pout = 130 W CW, IDQ = 1000 mA, f = 921 MHz, VSWR = 5:1, All Phase Angles at Frequency of Tests) Ψ OFF CHARACTERISTICS Freescale Semiconductor, Inc... ON CHARACTERISTICS DYNAMIC CHARACTERISTICS (1) FUNCTIONAL TESTS (In Motorola Test Fixture) Power Output, 1 dB Compression Point (VDD = 28 Vdc, IDQ = 1000 mA, f = 921 and 960 MHz) No Degradation In Output Power Before and After Test (1) Part is internally input matched. MRF9130LR3 MRF9130LSR3 2 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. R1 VDD VGG + C1 R2 C2 C6 C3 C5 + C4 R3 RF INPUT C10 C8 Z1 Z2 Freescale Semiconductor, Inc... C7 DUT C12 C16 C19 C20 Z6 Z5 C11 C21 Z4 Z3 C9 C14 C13 C15 C17 RF OUTPUT C22 C18 Figure 1. 921 - 960 MHz Test Circuit Schematic Table 1. 921 - 960 MHz Test Circuit Component Designations and Values Designators Description C1, C4 10 µF, 35 V Tantalum Capacitors, Vishay - Sprague #293D106X9035D C2, C5 100 nF Chip Capacitors (1206), AVX #1206C104KATDA C3, C8, C21, C22 22 pF, 100B Chip Capacitors, ATC #100B220C C6 33 pF, 100B Chip Capacitor, ATC #100B330JW C7 1.0 pF, 100B Chip Capacitor, ATC #100B1R0BW C9 4.7 pF, 100B Chip Capacitor, ATC #100B4R7BW C10 8.2 pF, 100B Chip Capacitor, ATC #100B8R2CW C11 10 pF, 100B Chip Capacitor, ATC #100B100GW C12, C13 12 pF, 100B Chip Capacitors, ATC #100B120GW C14, C15 2.7 pF, 100B Chip Capacitors, ATC #100B2R7BW C16, C17, C18 3.9 pF, 100B Chip Capacitors, ATC #100B3R9BW C19 3.3 pF, 100B Chip Capacitor, ATC #100B3R3BW C20 1.8 pF, 100B Chip Capacitor, ATC #100B1R8BW R1 18 kW, 1/8 W Chip Resistor (1206) R2 10 kW, 1/8 W Chip Resistor (1206) R3 1.0 kW, 1/8 W Chip Resistor (1206) Z1 0.117″ x 0.600″ Microstrip Z2 0.117″ x 1.851″ Microstrip Z3 1.074″ x 1.068″ Microstrip Z4 1.074″ x 0.980″ Microstrip Z5 0.117″ x 1.933″ Microstrip Z6 0.117″ x 0.605″ Microstrip PCB Taconic TLX8, 0.030″, εr = 2.55 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF9130LR3 MRF9130LSR3 3 Freescale Semiconductor, Inc. C4 C1 VBIAS VSUPPLY R1 C2 R2 C7 C8 C5 C6 C3 C9 R3 C10 C12 C14 C11 C13 C15 C16 C19 C20 C21 C18 C22 Freescale Semiconductor, Inc... C17 Ground MRF9130L Ground Figure 2. 921 - 960 MHz Test Circuit Component Layout MRF9130LR3 MRF9130LSR3 4 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS Gps 17 Gps, POWER GAIN (dB) 0 Pout = 60 W −5 130 W −10 16 −15 60 W 15 IRL 130 W −20 14 VDD = 28 Vdc IDQ = 1000 mA 13 900 920 940 960 980 IRL, INPUT RETURN LOSS (dB) 18 −25 1000 Figure 3. Power Gain and Input Return Loss versus Frequency 50 17 40 Gps 16.5 30 16 20 15.5 VDD = 28 Vdc IDQ = 1000 mA f = 940 MHz η IDQ = 1200 mA G ps , POWER GAIN (dB) 17.5 18 h, DRAIN EFFICIENCY (%) 60 Gps, POWER GAIN (dB) 18 10 1000 mA 800 mA 16 600 mA 15 VDD = 28 Vdc f = 940 MHz 0 1 17 10 15 100 14 1000 1 10 Pout, OUTPUT POWER (dBm) 100 1000 Pout, OUTPUT POWER (WATTS) Figure 4. Power Gain and Efficiency versus Output Power Figure 5. Power Gain versus Output Power 18 18 TC = −20°C 17 G ps , POWER GAIN (dB) G ps , POWER GAIN (dB) Freescale Semiconductor, Inc... f, FREQUENCY (MHz) 16 15 30 V 28 V 14 25°C 17 50°C 85°C 16 15 VDD = 28 Vdc IDQ = 1000 mA f = 940 MHz 26 V IDQ = 1000 mA f = 940 MHz VDD = 24 V 13 14 1 10 100 1000 1 10 100 Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) Figure 6. Power Gain versus Output Power Figure 7. Power Gain versus Output Power MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com 1000 MRF9130LR3 MRF9130LSR3 5 Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS 40 6 30 η 4 20 2 10 EVM h, DRAIN EFFICIENCY (%) VDD = 28 Vdc IDQ = 800 mA f = 960 MHz 8 EVM (%) −50 50 SPECTRAL REGROWTH (dBc) 10 VDD = 28 Vdc IDQ = 800 mA f = 960 MHz −55 −60 −65 @ 400 kHz −70 −75 @ 600 kHz −80 0 0 Freescale Semiconductor, Inc... 1 10 100 −85 1 10 Pout, OUTPUT POWER (WATTS) AVG. Pout, OUTPUT POWER (WATTS) AVG. Figure 8. EVM and Efficiency versus Output Power Figure 9. Spectral Regrowth versus Output Power 100 NOTE: Curves on Figure 8 and 9 gathered on a GSM EDGE optimized text fixture. MRF9130LR3 MRF9130LSR3 6 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. f = 880 MHz Zload f = 1000 MHz Zo = 5 Ω Freescale Semiconductor, Inc... f = 880 MHz Zsource f = 1000 MHz VDD = 28 Vdc, IDQ = 1000 mA, Pout = 130 W CW f MHz Zsource Ω Zload Ω 880 0.63 - j1.66 0.82 - j0.36 920 0.67 - j1.88 0.72 - j0.30 960 0.82 - j2.18 0.74 - j0.37 1000 0.86 - j2.56 0.69 - j0.79 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 10. Series Equivalent Input and Output Impedance MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF9130LR3 MRF9130LSR3 7 Freescale Semiconductor, Inc. Freescale Semiconductor, Inc... NOTES MRF9130LR3 MRF9130LSR3 8 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. Freescale Semiconductor, Inc... NOTES MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF9130LR3 MRF9130LSR3 9 Freescale Semiconductor, Inc. Freescale Semiconductor, Inc... NOTES MRF9130LR3 MRF9130LSR3 10 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. PACKAGE DIMENSIONS B G Q bbb 2X 1 T A M M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 3 B K 2 (FLANGE) D bbb M T A B M M M bbb N Freescale Semiconductor, Inc... R (INSULATOR) T A M M B M ccc M T A S (LID) ccc H M T A M M B M aaa M T A M (LID) B M (INSULATOR) B M C F E A T A SEATING PLANE DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE (FLANGE) CASE 465 - 06 ISSUE F NI - 780 MRF9130LR3 4X U (FLANGE) 4X Z (LID) B 1 K 2X 2 B (FLANGE) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. D bbb M T A M B M N ccc M R (LID) M T A M B M ccc M T A M M B M aaa M T A M S (INSULATOR) bbb M T A (LID) B M (INSULATOR) B M H C 3 E A A (FLANGE) MOTOROLA RF DEVICE DATA F T SEATING PLANE CASE 465A - 06 ISSUE F NI - 780S MRF9130LSR3 For More Information On This Product, Go to: www.freescale.com DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 −−− 0.040 −−− 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 −−− 1.02 −−− 0.76 0.127 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE MRF9130LR3 MRF9130LSR3 11 Freescale Semiconductor, Inc... Freescale Semiconductor, Inc. Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. 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MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. E Motorola Inc. 2004 HOW TO REACH US: JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan 81-3-3440-3569 USA /EUROPE /LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 ASIA /PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 HOME PAGE: http://motorola.com/semiconductors MRF9130LR3 MRF9130LSR3 12 ◊ MOTOROLA RF DEVICEMRF9130L/D DATA For More Information On This Product, Go to: www.freescale.com