Data Sheet

Freescale Semiconductor
Technical Data
Document Number: AFT18H357--24N
Rev. 0, 5/2015
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
This 63 W asymmetrical Doherty RF power LDMOS transistor is designed
for cellular base station applications covering the frequency range of 1805 to
1880 MHz.
AFT18H357--24NR6
1800 MHz
 Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Vdc,
IDQA = 800 mA, VGSB = 0.9 V, Pout = 63 W Avg., Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency
Gps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
1805 MHz
17.5
48.7
7.6
–37.5
1840 MHz
17.6
48.3
7.7
–38.9
1880 MHz
17.4
48.2
7.7
–38.5
1805–1880 MHz, 63 W AVG., 28 V
AIRFAST RF POWER LDMOS
TRANSISTOR
Features
 Advanced high performance in--package Doherty
 High thermal conductivity packaging technology for reduced thermal
resistance
 Greater negative gate--source voltage range for improved Class C operation
 Designed for digital predistortion error correction systems
OM--1230--4L2L
PLASTIC
6 VBWA(1)
Carrier
RFinA/VGSA 1
5 RFoutA/VDSA
RFinB/VGSB 2
4 RFoutB/VDSB
Peaking
3 VBWB(1)
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Pin Connections
1. Device cannot operate with the VDD current
supplied through pin 3 and pin 6.
 Freescale Semiconductor, Inc., 2015. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
AFT18H357--24NR6
1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
–0.5, +65
Vdc
Gate--Source Voltage
VGS
–6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
–65 to +150
C
Case Operating Temperature Range
TC
–40 to +150
C
Operating Junction Temperature Range (1,2)
TJ
–40 to +225
C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 75C, 63 W Avg., W--CDMA, 28 Vdc, IDQA = 800 mA, VGSB = 0.7 Vdc,
1840 MHz
Symbol
Value (2,3)
Unit
RJC
0.23
C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2
Machine Model (per EIA/JESD22--A115)
B
Charge Device Model (per JESD22--C101)
IV
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
3
260
C
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
Adc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
Adc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 140 Adc)
VGS(th)
0.8
1.2
1.6
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, IDA = 800 mAdc, Measured in Functional Test)
VGSA(Q)
1.4
1.8
2.2
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 1.4 Adc)
VDS(on)
0.1
0.2
0.3
Vdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 240 Adc)
VGS(th)
0.8
1.2
1.6
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 2.4 Adc)
VDS(on)
0.1
0.2
0.3
Vdc
Characteristic
Off Characteristics (4)
On Characteristics -- Side A (4)
On Characteristics -- Side B (4)
1.
2.
3.
4.
Continuous use at maximum temperature will affect MTTF.
MTTF calculator available at http://www.freescale.com/rf/calculators.
Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf and search for AN1955.
Each side of device measured separately.
(continued)
AFT18H357--24NR6
2
RF Device Data
Freescale Semiconductor, Inc.
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
(1,2)
Functional Tests
(In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 800 mA, VGSB = 0.9 V,
Pout = 63 W Avg., f = 1805 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset.
Power Gain
Gps
16.2
17.5
19.2
dB
Drain Efficiency
D
42.0
48.7
—
%
PAR
6.9
7.6
—
dB
ACPR
—
–37.5
–30.0
dBc
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Load Mismatch
10% Duty Cycle
(2)
(In Freescale Doherty Test Fixture, 50 ohm system) IDQA = 800 mA, VGSB = 0.9 V, f = 1840 MHz, 100 sec(on),
VSWR 10:1 at 32 Vdc, 339 W Pulsed CW Output Power
(3 dB Input Overdrive from 190 W Pulsed CW Rated Power)
No Device Degradation
Typical Performance (2) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 800 mA, VGSB = 0.9 Vdc,
1805–1880 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
—
200
—
W
(3)
P3dB
—
316
—
W
AM/PM
(Maximum value measured at the P3dB compression point across
the 1805--1880 MHz bandwidth)

—
–16
—

VBWres
—
60
—
MHz
Gain Flatness in 75 MHz Bandwidth @ Pout = 63 W Avg.
GF
—
0.3
—
dB
Gain Variation over Temperature
(–30C to +85C)
G
—
0.004
—
dB/C
P1dB
—
0.008
—
dB/C
Pout @ 3 dB Compression Point
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Output Power Variation over Temperature
(–30C to +85C)
Table 6. Ordering Information
Device
AFT18H357--24NR6
Tape and Reel Information
R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel
Package
OM--1230--4L2L
1. Part internally matched both on input and output.
2. Measurements made with device in an asymmetrical Doherty configuration.
3. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
AFT18H357--24NR6
RF Device Data
Freescale Semiconductor, Inc.
3
VGGA
VDDA
-C11
C1
C9
C17
C18
P
CUT OUT AREA
R1
C
R3
C7*
C8*
R2
C6
C22
C19
AFT18H357--24N
Rev. 1
C13
C21
C5
Z1
C3
C15
C12
C10
C2
C14
C4
D65431
C16
--
VDDB
VGGB
*C7 and C8 are mounted vertically.
Note: C20 component not used.
Figure 2. AFT18H357--24NR6 Test Circuit Component Layout
Table 7. AFT18H357--24NR6 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2, C3, C4
20 pF Chip Capacitors
ATC600F200JT250XT
ATC
C5, C6
12 pF Chip Capacitors
ATC600F120JT250XT
ATC
C7
6.2 pF Chip Capacitor
ATC600F6R2JT250XT
ATC
C8
6.8 pF Chip Capacitor
ATC600F6R8JT250XT
ATC
C9, C10, C11, C12, C13, C14
10 F Chip Capacitors
C5750X7R1H106M230KB
TDK
C15, C16
220 F, 100 V Electrolytic Capacitors
EEV-FK2A221M
Panasonic-ECG
C17
0.8 pF Chip Capacitor
ATC600F0R8BT250XT
ATC
C18
1 pF Chip Capacitor
ATC600F1R0BT250XT
ATC
C19
1.2 pF Chip Capacitor
ATC600F1R2BT250XT
ATC
C21, C22
2.2 F Chip Capacitors
C3225X7R2A225K230AB
TDK
R1, R2
2.2 , 1/4 W Chip Resistors
CRCW12062R20JNEA
Vishay
R3
50 , 4 W Chip Resistor
CW12010T0050GBK
ATC
Z1
1700–2000 MHz Band, 90, 5 dB Hybrid Coupler
X3C19P1-05S
Anaren
PCB
Rogers RO4350B, 0.020, r = 3.66
D65431
MTL
AFT18H357--24NR6
4
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — 1805–1880 MHz
50
49
17.5
48
D
47
17.4
Gps
17.3
Input Signal PAR = 9.9 dB
@ 0.01% Probability on CCDF
17.2
PARC
17.1
17
16.8
1760
1780
1800
–2.1
–35
–2.2
–36
–37
ACPR
16.9
–34
ACPR (dBc)
Gps, POWER GAIN (dB)
17.6
–38
1820 1840 1860
f, FREQUENCY (MHz)
1880
1900
–2.3
–2.4
–2.5
PARC (dB)
VDD = 28 Vdc, Pout = 63 W (Avg.), IDQA = 800 mA, VGSB = 0.9 Vdc
17.7 Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
D, DRAIN
EFFICIENCY (%)
51
17.8
–2.6
–39
1920
IMD, INTERMODULATION DISTORTION (dBc)
Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 63 Watts Avg.
0
VDD = 28 Vdc, Pout = 130 W (PEP), IDQA = 800 mA
VGSB = 0.9 Vdc, Two--Tone Measurements
–15 (f1 + f2)/2 = Center Frequency of 1840 MHz
IM3--U
IM3--L
–30
–45
IM5--U IM5--L
IM7--U
–60
–75
1
IM7--L
10
250
100
TWO–TONE SPACING (MHz)
Figure 4. Intermodulation Distortion Products
versus Two--Tone Spacing
17.5
17
16.5
16
VDD = 28 Vdc, IDQA = 800 mA, VGSB = 0.9 Vdc
f = 1840 MHz, Single--Carrier W--CDMA
0
–1 dB = 34.8 W
–1
D
ACPR
60
–25
50
–30
40
–2
30
Gps
–2 dB = 55.0 W
–3
–3 dB = 75.8 W
–4
20
PARC
10
3.84 MHz Channel Bandwidth, Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF
–5
5
30
55
80
Pout, OUTPUT POWER (WATTS)
105
0
130
–35
–40
ACPR (dBc)
18
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
Gps, POWER GAIN (dB)
18.5
1
D DRAIN EFFICIENCY (%)
19
–45
–50
–55
Figure 5. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
AFT18H357--24NR6
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS — 1805–1880 MHz
VDD = 28 Vdc, IDQA = 800 mA, VGSB = 0.9 Vdc
Single--Carrier W--CDMA, 3.84 MHz Channel
20 Bandwidth, Input Signal PAR = 9.9 dB
@ 0.01% Probability on CCDF
18
1880 MHz
ACPR
50
–10
40
1840 MHz
30
1805 MHz
1880 MHz
14
0
D
Gps
1880 MHz
1840 MHz
1840 MHz
12
20
10
–20
–30
–40
ACPR (dBc)
16 1805 MHz
60
D, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
22
–50
1805 MHz
10
0
400
10
100
Pout, OUTPUT POWER (WATTS) AVG.
1
–60
Figure 6. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
20
Gain
18
GAIN (dB)
16
14
VDD = 28 Vdc
Pin = 0 dBm
IDQA = 800 mA
VGSB = 0.9 Vdc
12
10
8
1600
1680
1760
1840 1920 2000
f, FREQUENCY (MHz)
2080
2160
2240
Figure 7. Broadband Frequency Response
AFT18H357--24NR6
6
RF Device Data
Freescale Semiconductor, Inc.
Table 8. Carrier Side Load Pull Performance — Maximum Power Tuning
VDD = 28 Vdc, IDQA = 818 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Output Power
P1dB
f
(MHz)
Zsource
()
Zin
()
1805
1.25 – j3.37
1.01 + j3.46
1840
1.53 – j3.73
1.22 + j3.66
1880
1.82 – j4.02
1.55 + j3.98
Zload
()
(1)
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
1.37 – j3.14
19.2
51.6
145
56.5
–10
1.35 – j3.34
18.9
51.6
146
55.3
–10
1.32 – j3.25
19.1
51.5
142
55.4
–11
Max Output Power
P3dB
f
(MHz)
Zsource
()
Zin
()
Zload (2)
()
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
1805
1.25 – j3.37
0.95 + j3.58
1.34 – j3.29
17.0
52.4
173
57.9
–14
1840
1.53 – j3.73
1.13 + j3.82
1.32 – j3.39
16.8
52.4
175
57.1
–15
1880
1.82 – j4.02
1.51 + j4.18
1.35 – j3.58
16.7
52.3
170
55.6
–16
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Table 9. Carrier Side Load Pull Performance — Maximum Drain Efficiency Tuning
VDD = 28 Vdc, IDQA = 818 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Drain Efficiency
P1dB
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
2.78 – j2.07
21.6
49.9
97
69.1
–15
1.19 + j3.79
2.61 – j1.97
21.6
49.8
96
68.8
–17
1.56 + j4.13
2.43 – j1.75
21.8
49.4
87
67.3
–19
(W)
D
(%)
AM/PM
()
f
(MHz)
Zsource
()
Zin
()
1805
1.25 – j3.37
1.00 + j3.59
1840
1.53 – j3.73
1880
1.82 – j4.02
Zload
()
(1)
Max Drain Efficiency
P3dB
f
(MHz)
Zsource
()
Zin
()
1805
1.25 – j3.37
0.91 + j3.67
1840
1.53 – j3.73
1.10 + j3.88
1880
1.82 – j4.02
1.44 + j4.27
Zload
()
(2)
Gain (dB)
(dBm)
2.69 – j1.94
19.7
50.5
111
70.0
–23
2.51 – j2.05
19.5
50.6
115
69.4
–23
2.17 – j2.01
19.5
50.5
111
67.7
–25
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin
Zload
AFT18H357--24NR6
RF Device Data
Freescale Semiconductor, Inc.
7
Table 10. Peaking Side Load Pull Performance — Maximum Power Tuning
VDD = 28 Vdc, VGSB = 0.8 Vdc, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Output Power
P1dB
f
(MHz)
Zsource
()
Zin
()
1805
1.00 – j3.10
0.73 + j3.40
1840
0.92 – j3.29
0.81 + j3.51
1880
1.42 – j3.53
1.14 + j3.76
Zload
()
(1)
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
1.62 – j4.46
15.0
53.6
230
54.3
–25
1.73 – j4.64
15.4
53.6
229
55.1
–30
1.80 – j4.91
15.2
53.6
227
54.1
–30
Max Output Power
P3dB
f
(MHz)
Zsource
()
Zin
()
Zload (2)
()
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
1805
1.00 – j3.10
0.73 + j3.48
1.73 – j4.60
13.0
54.2
262
56.4
–32
1840
0.92 – j3.29
0.82 + j3.62
1.78 – j4.89
13.2
54.2
263
55.4
–37
1880
1.42 – j3.53
1.21 + j3.91
1.88 – j5.16
13.1
54.1
259
54.2
–37
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Table 11. Peaking Side Load Pull Performance — Maximum Drain Efficiency Tuning
VDD = 28 Vdc, VGSB = 0.8 Vdc, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Drain Efficiency
P1dB
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
3.45 – j2.79
16.5
52.0
158
67.6
–34
0.70 + j3.48
3.30 – j2.43
16.8
51.6
145
67.5
–39
0.95 + j3.69
2.79 – j1.51
16.4
50.4
110
67.9
–44
f
(MHz)
Zsource
()
Zin
()
1805
1.00 – j3.10
0.64 + j3.39
1840
0.92 – j3.29
1880
1.42 – j3.53
Zload
()
(1)
Max Drain Efficiency
P3dB
f
(MHz)
Zsource
()
Zin
()
1805
1.00 – j3.10
0.68 + j3.48
1840
0.92 – j3.29
0.75 + j3.59
1880
1.42 – j3.53
1.09 + j3.87
Zload
()
(2)
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
3.74 – j3.07
14.4
52.5
177
67.7
–43
3.48 – j2.43
14.8
52.0
159
67.6
–51
2.97 – j2.83
14.6
52.3
172
67.2
–49
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin
Zload
AFT18H357--24NR6
8
RF Device Data
Freescale Semiconductor, Inc.
P1dB -- TYPICAL CARRIER LOAD PULL CONTOURS — 1840 MHz
0
0
47.5
48
--1
48.5
49
--2
IMAGINARY ()
IMAGINARY ()
--1
E
49.5
--3
51.5
P
51
50
50.5
E
62
--3
P
--4
--5
0.5
--5
0.5
1
1.5
2
REAL ()
3
2.5
3.5
64
66
60
58
--4
Figure 8. P1dB Load Pull Output Power Contours (dBm)
56
1
1.5
2
REAL ()
54
52
3
2.5
3.5
Figure 9. P1dB Load Pull Efficiency Contours (%)
0
0
22.5
--1
22
--2
E
21.5
21
--3
P
20.5
--4
18.5
--5
0.5
1
1.5
2
REAL ()
2.5
--20
--2
E
3
P
Figure 10. P1dB Load Pull Gain Contours (dB)
NOTE:
--16
--12
--4
3.5
--18
--14
--3
--10
20
19.5
19
--22
--1
IMAGINARY ()
IMAGINARY ()
68
--2
--5
0.5
--8
1
1.5
2
REAL ()
2.5
3
3.5
Figure 11. P1dB Load Pull AM/PM Contours ()
P
= Maximum Output Power
E
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
AFT18H357--24NR6
RF Device Data
Freescale Semiconductor, Inc.
9
P3dB -- TYPICAL CARRIER LOAD PULL CONTOURS — 1840 MHz
0
0
48.5
49
--1
49.5
50
--2
IMAGINARY ()
IMAGINARY ()
--1
E
50.5
51
51.5
--3
P
52
--4
64
--2
E
68
66
--3
64
P
62
--4
60
58
56
54
--5
0.5
1
1.5
2
REAL ()
3
2.5
--5
0.5
3.5
Figure 12. P3dB Load Pull Output Power Contours (dBm)
1.5
2
REAL ()
2.5
3
3.5
Figure 13. P3dB Load Pull Efficiency Contours (%)
0
0
20.5
--1
--1
20
--2
E
IMAGINARY ()
IMAGINARY ()
1
19.5
19
--3
P
17.5
18.5
18
--4
--28
--2
--24
16.5
1
1.5
E
--20
--16
P
--14
--12
17
2
REAL ()
--22
--18
--3
--4
--5
0.5
--26
2.5
3
3.5
Figure 14. P3dB Load Pull Gain Contours (dB)
NOTE:
--5
0.5
1
1.5
2
REAL ()
2.5
3
3.5
Figure 15. P3dB Load Pull AM/PM Contours ()
P
= Maximum Output Power
E
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
AFT18H357--24NR6
10
RF Device Data
Freescale Semiconductor, Inc.
P1dB -- TYPICAL PEAKING LOAD PULL CONTOURS — 1840 MHz
1
1
0
49.5
--1
50
--2
51
51.5
E
50.5
--3
52
--4
P
--5
52.5
53.5
--7
1.5
1
3.5
4
15
0
E
--4
P
1
1.5
2
3
2.5
REAL ()
3.5
4
4.5
1
16
15.5
0
--1
--2
IMAGINARY ()
IMAGINARY ()
66
Figure 17. P1dB Load Pull Efficiency Contours (%)
--1
E
--3
16.5
--4
16
P
--5
13
1
13.5
1.5
14
3
2.5
REAL ()
--38
--3
--34
--4
P
--30
3.5
4
4.5
Figure 18. P1dB Load Pull Gain Contours (dB)
NOTE:
--7
--40
E
--36
--32
--28
--6
14.5
2
--44
--42
--2
--5
15.5
15
--6
--7
52
--3
--7
4.5
Figure 16. P1dB Load Pull Output Power Contours (dBm)
1
64
--6
3
2.5
REAL ()
2
60
54 58 62
--2
--5
53
--6
56
--1
IMAGINARY ()
IMAGINARY ()
0
1
1.5
2
3
2.5
REAL ()
3.5
4
4.5
Figure 19. P1dB Load Pull AM/PM Contours ()
P
= Maximum Output Power
E
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
AFT18H357--24NR6
RF Device Data
Freescale Semiconductor, Inc.
11
P3dB -- TYPICAL PEAKING LOAD PULL CONTOURS — 1840 MHz
1
1
0
0
IMAGINARY ()
50.5
51.5
--2
E
52
--3
52.5
--4
54
P
--5
53
53.5
--7
52.5
1.5
1
1
13
0
3
2.5
REAL ()
2
3.5
4
66
E
--3
--4
--7
4.5
P
1
1.5
2
3
2.5
REAL ()
3.5
4
4.5
Figure 21. P3dB Load Pull Efficiency Contours (%)
1
14
13.5
0
--1
--2
IMAGINARY ()
--1
IMAGINARY ()
--2
--6
52.5
Figure 20. P3dB Load Pull Output Power Contours (dBm)
E
--3
14.5
--4
14
P
--5
11
1
1.5
2
3
2.5
REAL ()
E
--3
--52
--50
--48
--46
--44
--42
--4
--40
P
--38
--6
12.5
11.5 12
--54
--2
--5
13.5
13
--6
--7
52 56
--5
--6
62
64
--1
51
IMAGINARY ()
50
--1
58 60
54
3.5
4
4.5
Figure 22. P3dB Load Pull Gain Contours (dB)
NOTE:
--7
1
1.5
2
3
2.5
REAL ()
3.5
4
4.5
Figure 23. P3dB Load Pull AM/PM Contours ()
P
= Maximum Output Power
E
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
AFT18H357--24NR6
12
RF Device Data
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
AFT18H357--24NR6
RF Device Data
Freescale Semiconductor, Inc.
13
AFT18H357--24NR6
14
RF Device Data
Freescale Semiconductor, Inc.
AFT18H357--24NR6
RF Device Data
Freescale Semiconductor, Inc.
15
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
 AN1907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages
 AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
 EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
 Electromigration MTTF Calculator
 RF High Power Model
 .s2p File
Development Tools
 Printed Circuit Boards
To Download Resources Specific to a Given Part Number:
1. Go to http://www.freescale.com/rf
2. Search by part number
3. Click part number link
4. Choose the desired resource from the drop down menu
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
May 2015
Description
 Initial Release of Data Sheet
AFT18H357--24NR6
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RF Device Data
Freescale Semiconductor, Inc.
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