Freescale Semiconductor Technical Data Document Number: MD7IC1812N Rev. 0, 5/2015 RF LDMOS Wideband Integrated Power Amplifiers The MD7IC1812N wideband integrated circuit is designed with on--chip matching that makes it usable from 1805 to 2170 MHz. This multi--stage structure is rated for 24 to 32 V operation and covers all typical cellular base station modulation formats. Driver Application — 1800 MHz Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc, IDQ1A = IDQ1B = 20 mA, IDQ2A = IDQ2B = 70 mA, Pout = 1.3 W Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) PAE (%) ACPR (dBc) 1805 MHz 31.9 13.0 –50.3 1840 MHz 31.6 13.4 –50.2 1880 MHz 31.5 14.0 –49.8 Capable of Handling 5:1 VSWR, @ 32 Vdc, 1840 MHz, 19 W CW Output Power (3 dB Input Overdrive from Rated Pout) Driver Application — 1900 MHz Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc, IDQ1A = IDQ1B = 20 mA, IDQ2A = IDQ2B = 70 mA, Pout = 1.3 W Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) PAE (%) ACPR (dBc) 1930 MHz 32.2 15.2 –51.6 1960 MHz 32.1 15.1 –52.3 1995 MHz 32.0 15.1 –52.6 MD7IC1812NR1 MD7IC1812GNR1 1805–2170 MHz, 1.3 W AVG., 28 V SINGLE W--CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS TO--270WB--14 PLASTIC MD71C1812NR1 TO--270WBG--14 PLASTIC MD71C1812GNR1 Driver Application — 2100 MHz Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc, IDQ1A = IDQ1B = 20 mA, IDQ2A = IDQ2B = 70 mA, Pout = 1.3 W Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) PAE (%) ACPR (dBc) 2110 MHz 32.2 14.8 –52.8 2140 MHz 32.3 14.6 –52.6 2170 MHz 32.5 14.4 –49.4 Features Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1) Designed for Digital Predistortion Error Correction Systems Optimized for Doherty Applications 1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family, and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf and search for AN1977 or AN1987. Freescale Semiconductor, Inc., 2015. All rights reserved. RF Device Data Freescale Semiconductor, Inc. MD7IC1812NR1 MD7IC1812GNR1 1 VDS1A RFinA VDS1A VGS2A VGS1A RFinA NC NC NC NC RFinB VGS1B VGS2B VDS1B RFout1/VDS2A VGS1A Quiescent Current Temperature Compensation (1) VGS2A VGS1B Quiescent Current Temperature Compensation (1) VGS2B RFinB 1 2 3 4 5 6 7 8 9 10 11 12 14 13 RFout1/VDS2A RFout2/VDS2B (Top View) RFout2/VDS2B Note: Exposed backside of the package is the source terminal for the transistors. VDS1B Figure 1. Functional Block Diagram Figure 2. Pin Connections Table 1. Maximum Ratings Symbol Value Unit Drain--Source Voltage Rating VDSS –0.5, +65 Vdc Gate--Source Voltage VGS –0.5, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg – 65 to +150 C TC 150 C Case Operating Temperature Operating Junction Temperature (2,3) Input Power TJ 225 C Pin 20 dBm Symbol Value (3,4) Unit Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 73C, 1.3 W CW Stage 1, 28 Vdc, IDQ1A = IDQ1B = 40 mA, 1840 MHz Stage 2, 28 Vdc, IDQ2A = IDQ2B = 180 mA, 1840 MHz RJC C/W 6.5 2.9 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 1C Machine Model (per EIA/JESD22--A115) A Charge Device Model (per JESD22--C101) III Table 4. Moisture Sensitivity Level Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating Package Peak Temperature Unit 3 260 C 1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family, and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf and search for AN1977 or AN1987. 2. Continuous use at maximum temperature will affect MTTF. 3. MTTF calculator available at http://www.freescale.com/rf/calculators. 4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf and search for AN1955. MD7IC1812NR1 MD7IC1812GNR1 2 RF Device Data Freescale Semiconductor, Inc. Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 Adc Gate--Source Leakage Current (VGS = 1.5 Vdc, VDS = 0 Vdc) IGSS — — 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 5 Adc) VGS(th) 1.2 2.0 2.7 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, IDQ1A = IDQ1B = 20 mAdc) VGS(Q) — 2.7 — Vdc Fixture Gate Quiescent Voltage (VDD = 28 Vdc, IDQ1A = IDQ1B = 20 mAdc, Measured in Functional Test) VGG(Q) 4.2 5.0 5.7 Vdc Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 Adc Gate--Source Leakage Current (VGS = 1.5 Vdc, VDS = 0 Vdc) IGSS — — 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 24 Adc) VGS(th) 1.2 2.0 2.7 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, IDQ2A = IDQ2B = 70 mAdc) VGS(Q) — 2.0 — Vdc Fixture Gate Quiescent Voltage (VDD = 28 Vdc, IDQ2A = IDQ2B = 70 mAdc, Measured in Functional Test) VGG(Q) 3.2 4.0 4.7 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 240 mAdc) VDS(on) 0.1 0.24 1.5 Vdc Characteristic Stage 1 -- Off Characteristics (1) Stage 1 -- On Characteristics (1) Stage 2 -- Off Characteristics (1) Stage 2 -- On Characteristics (1) Functional Tests (2,3) (In Freescale Wideband 1805–1880 Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1A = IDQ1B = 20 mA, IDQ2A = IDQ2B = 70 mA, Pout = 1.3 W Avg., f = 1880 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Power Gain Gps 31.0 31.5 35.0 dB Power Added Efficiency PAE 13.0 14.0 — % ACPR — –49.8 –47.5 dBc Adjacent Channel Power Ratio 1. Each side of device measured separately. 2. Part internally matched both on input and output. 3. Measurement made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull wing (GN) parts. (continued) MD7IC1812NR1 MD7IC1812GNR1 RF Device Data Freescale Semiconductor, Inc. 3 Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1A = IDQ1B = 20 mA, IDQ2A = IDQ2B = 70 mA, 1805–1880 MHz Bandwidth Pout @ 1 dB Compression Point, CW P1dB — 12 — W Pout @ 3 dB Compression Point, CW P3dB — 13 — W VBWres — 140 — MHz — — 2.5 1.7 — — VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Quiescent Current Accuracy over Temperature (1) with 2 k Gate Feed Resistors (–30 to 85C) with 2 k Gate Feed Resistors (–30 to 85C) Stage 1 Stage 2 IQT % Gain Flatness in 75 MHz Bandwidth @ Pout = 1.3 W Avg. GF — 0.3 — dB Gain Variation over Temperature (–30C to +85C) G — 0.03 — dB/C P1dB — 0.014 — dB/C Output Power Variation over Temperature (–30C to +85C) Table 6. Ordering Information Device MD7IC1812NR1 MD7IC1812GNR1 Tape and Reel Information R1 Suffix = 500 Units, 44 mm Tape Width, 13--inch Reel Package TO--270WB--14 TO--270WBG--14 1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family, and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf and search for AN1977 or AN1987. MD7IC1812NR1 MD7IC1812GNR1 4 RF Device Data Freescale Semiconductor, Inc. R2 C31 C24 R1 C32 MD7IC Dual Path Rev. 2 C25 C2 VDD2A C23 VDD1A VGG2A VGG1A C1 C17 C19 C29 C36 C35 R5 C8 C37 C38 C9 C10 CUT OUT AREA C5 C7 Z1 R6 C13 C6 C21 C15 C16 C11 C12 Z2 C22 C14 D44014 C20 C30 R3 C18 R4 C28 C27 VDD1B VGG1B VGG2B C26 C4 C33 VDD2B C34 C3 Figure 3. MD7IC1812NR1 Test Circuit Component Layout Table 7. MD7IC1812NR1 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2, C3, C4 3.9 pF Chip Capacitors ATC600F3R9BT250XT ATC C5, C6, C7, C8 1.0 pF Chip Capacitors ATC600F1R0BT250XT ATC C9, C10, C11, C12 0.6 pF Chip Capacitors ATC600F0R6BT250XT ATC C13, C14 0.8 pF Chip Capacitors ATC600F0R8BT250XT ATC C15, C16 1.2 pF Chip Capacitors ATC600F1R2BT250XT ATC C17, C18, C19, C20 10 pF Chip Capacitors ATC600F10RBT250XT ATC C21, C22 5.6 pF Chip Capacitors ATC600F5R6BT250XT ATC C23, C24, C25, C26, C27, C28, C29, C30, C31, C32, C33, C34 10 F Chip Capacitors C5750X7S2A106M230KB TDK C35, C36, C37, C38 22 nF Chip Capacitors GRM31MR72A223KA01L Murata R1, R2, R3, R4 2 K, 1/4 W Chip Resistors CRCW12062K00FKEA Vishay R5, R6 50 , 20 W Termination 375375--6X50--2 Anaren Z1, Z2 1800–2300 MHz Band, 90, 3 dB Hybrid Couplers X3C21P1-03S Anaren PCB Rogers RO4350B, 0.020, r = 3.66 D44014 MTL MD7IC1812NR1 MD7IC1812GNR1 RF Device Data Freescale Semiconductor, Inc. 5 TYPICAL CHARACTERISTICS — 1805–1880 MHz 14 32.4 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF Gps 32.3 13 12 32.2 32.1 31.9 1780 1800 –49.5 0.2 –50.5 –51 PARC 31.8 1760 0.25 –50 ACPR 32 –49 1820 1840 1860 f, FREQUENCY (MHz) 1880 1900 0.15 0.1 0.05 PARC (dB) 15 PAE 32.5 PAE, POWER ADDED EFFICIENCY (%) 32.6 Gps, POWER GAIN (dB) 16 VDD = 28 Vdc, Pout = 1.3 W (Avg.), IDQ1A = IDQ1B = 20 mA IDQ2A = IDQ2B = 70 mA, Single--Carrier W--CDMA 32.7 ACPR (dBc) 32.8 0 –51.5 1920 IMD, INTERMODULATION DISTORTION (dBc) Figure 4. Single--Carrier Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 1.3 Watts Avg. –15 VDD = 28 Vdc, Pout = 7.6 W (PEP), IDQ1A = IDQ1B = 20 mA IDQ2A = IDQ2B = 70 mA, Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 1840 MHz –25 –35 IM3--L IM3--U IM5--U IM5--L –45 IM7--U IM7--L –55 –65 1 10 300 100 TWO--TONE SPACING (MHz) 32 0 31 30 29 28 27 VDD = 28 Vdc, IDQ1A = IDQ1B = 20 mA IDQ2A = IDQ2B = 70 mA, f = 1840 MHz ACPR PAE –1 –1 dB = 3.4 W –2 1 3 5 7 Pout, OUTPUT POWER (WATTS) –30 40 20 Single--Carrier W--CDMA 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF –5 50 Gps –2 dB = 5 W –4 –25 30 –3 dB = 6.7 W –3 60 PARC 9 10 0 11 –35 –40 ACPR (dBc) 1 D DRAIN EFFICIENCY (%) 33 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) Gps, POWER GAIN (dB) Figure 5. Intermodulation Distortion Products versus Two--Tone Spacing –45 –50 –55 Figure 6. Output Peak--to--Average Ratio Compression (PARC) versus Output Power MD7IC1812NR1 MD7IC1812GNR1 6 RF Device Data Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS — 1805–1880 MHz Gps, POWER GAIN (dB) 32 1805 MHz 31 PAE 1840 MHz 1880 MHz ACPR 30 29 1805 MHz 27 20 1880 MHz 28 Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 1840 MHz 1 50 40 1805 MHz 1840 MHz 1880 MHz 30 60 Gps 10 0 0 30 10 Pout, OUTPUT POWER (WATTS) AVG. --10 --20 --30 --40 ACPR (dBc) VDD = 28 Vdc, IDQ1A = IDQ1B = 20 mA, IDQ2A = IDQ2B = 70 mA Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth PAE, POWER ADDED EFFICIENCY (%) 33 --50 --60 Figure 7. Single--Carrier W--CDMA Power Gain, Power Added Efficiency and ACPR versus Output Power 35 34 GAIN (dB) 33 Gain 32 31 VDD = 28 Vdc Pin = 0 dBm IDQ1A = IDQ1B = 20 mA IDQ2A = IDQ2B = 70 mA 30 29 1600 1700 1800 1900 2000 2100 f, FREQUENCY (MHz) 2200 2300 2400 Figure 8. Broadband Frequency Response MD7IC1812NR1 MD7IC1812GNR1 RF Device Data Freescale Semiconductor, Inc. 7 Table 8. Load Pull Performance — Maximum Power Tuning VDD = 28 Vdc, IDQ1A = IDQ1B = 12 mA, IDQ2A = IDQ2B = 80 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Output Power P1dB Zload () (1) Gain (dB) (dBm) (W) D (%) AM/PM () 9.75 – j4.18 26.4 40.8 12 59.9 –5 9.94 – j4.69 25.5 40.8 12 59.8 –4 22.3 – j11.4 9.53 – j5.22 24.7 40.8 12 59.6 –3 21.2 – j6.08 21.2 – j8.50 9.13 – j5.50 24.3 40.9 12 59.5 –3 1960 21.3 – j7.19 20.7 – j7.35 9.42 – j5.43 23.9 40.8 12 58.5 –3 1995 23.3 – j9.53 19.9 – j6.74 9.23 – j5.43 23.8 40.8 12 58.1 –3 f (MHz) Zsource () Zin () 1800 18.6 + j0.84 21.6 – j14.9 1840 18.9 – j2.06 22.0 – j13.4 1880 19.9 – j5.86 1930 2110 16.2 + j0.01 16.6 + j0.14 9.12 – j5.48 24.5 40.8 12 57.6 –4 2140 16.2 – j1.24 16.9 + j2.33 9.27 – j5.44 24.6 40.8 12 57.5 –4 2170 16.1 – j2.79 17.2 + j4.75 9.44 – j5.76 24.9 40.8 12 56.8 –4 Max Output Power P3dB f (MHz) Zsource () Zin () Zload (2) () Gain (dB) (dBm) (W) D (%) AM/PM () 1800 18.6 + j0.84 22.8 – j15.9 10.8 – j4.58 24.1 41.5 14 60.9 –6 1840 18.9 – j2.06 22.7 – j14.6 10.9 – j5.19 23.2 41.6 14 60.6 –5 1880 19.9 – j5.86 22.6 – j12.7 10.4 – j5.78 22.4 41.6 14 60.2 –5 1930 21.2 – j6.08 21.2 – j8.50 9.13 – j5.50 24.3 40.9 12 59.5 –3 1960 21.3 – j7.19 20.7 – j7.35 9.42 – j5.43 23.9 40.8 12 58.5 –3 1995 23.3 – j9.53 19.9 – j6.74 9.23 – j5.43 23.8 40.8 12 58.1 –3 2110 16.2 + j0.01 16.6 + j0.14 9.12 – j5.48 24.5 40.8 12 57.6 –4 2140 16.2 – j1.24 16.9 + j2.33 9.27 – j5.44 24.6 40.8 12 57.5 –4 2170 16.1 – j2.79 17.2 + j4.75 9.44 – j5.76 24.9 40.8 12 56.8 –4 (1) Load impedance for optimum P1dB power. (2) Load impedance for optimum P3dB power. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Note: Measurement made on a per side basis. Input Load Pull Tuner and Test Circuit Output Load Pull Tuner and Test Circuit Device Under Test Zsource Zin Zload MD7IC1812NR1 MD7IC1812GNR1 8 RF Device Data Freescale Semiconductor, Inc. Table 9. Load Pull Performance — Maximum Drain Efficiency Tuning VDD = 28 Vdc, IDQ1A = IDQ1B = 12 mA, IDQ2A = IDQ2B = 80 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Drain Efficiency P1dB Zload () (1) Gain (dB) (dBm) (W) D (%) AM/PM () 5.59 – j0.05 27.8 39.2 8 68.3 –9 5.29 – j1.05 26.9 39.2 8 67.6 –9 23.1 – j7.30 5.08 – j1.75 26.1 39.3 8 67.4 –9 21.2 – j6.08 22.4 – j5.16 4.95 – j2.29 25.7 39.4 9 67.0 –9 1960 21.3 – j7.19 22.0 – j4.53 5.22 – j2.57 25.3 39.6 9 66.5 –8 1995 23.3 – j9.53 21.7 – j3.81 5.26 – j2.76 25.1 39.6 9 65.4 –8 f (MHz) Zsource () Zin () 1800 18.6 + j0.84 21.8 – j10.1 1840 18.9 – j2.06 22.5 – j9.13 1880 19.9 – j5.86 1930 2110 16.2 + j0.01 18.8 + j2.28 4.73 – j3.36 25.8 39.5 9 64.3 –9 2140 16.2 – j1.24 18.1 + j3.56 4.67 – j3.68 26.1 39.5 9 64.2 –10 2170 16.1 – j2.79 18.9 + j6.77 5.18 – j3.92 26.4 39.7 9 63.3 –10 Max Drain Efficiency P3dB f (MHz) Zsource () Zin () Zload (2) () Gain (dB) (dBm) (W) D (%) AM/PM () 1800 18.6 + j0.84 22.7 – j12.6 6.21 – j0.66 25.6 40.2 11 69.5 –10 1840 18.9 – j2.06 23.1 – j11.5 5.87 – j1.57 24.8 40.2 11 68.7 –10 1880 19.9 – j5.86 23.6 – j9.16 5.27 – j1.95 24.1 40.0 10 68.0 –11 1930 21.2 – j6.08 22.4 – j5.16 4.95 – j2.29 25.7 39.4 9 67.0 –9 1960 21.3 – j7.19 22.0 – j4.53 5.22 – j2.57 25.3 39.6 9 66.5 –8 1995 23.3 – j9.53 21.7 – j3.81 5.26 – j2.76 25.1 39.6 9 65.4 –8 2110 16.2 + j0.01 18.8 + j2.28 4.73 – j3.36 25.8 39.5 9 64.3 –9 2140 16.2 – j1.24 18.1 + j3.56 4.67 – j3.68 26.1 39.5 9 64.2 –10 2170 16.1 – j2.79 18.9 + j6.77 5.18 – j3.92 26.4 39.7 9 63.3 –10 (1) Load impedance for optimum P1dB efficiency. (2) Load impedance for optimum P3dB efficiency. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Note: Measurement made on a per side basis. Input Load Pull Tuner and Test Circuit Output Load Pull Tuner and Test Circuit Device Under Test Zsource Zin Zload MD7IC1812NR1 MD7IC1812GNR1 RF Device Data Freescale Semiconductor, Inc. 9 R2 C31 C24 R1 C32 MD7IC Dual Path Rev. 2 C25 C2 VDD2A C23 VDD1A VGG2A VGG1A C1 C17 C19 C29 C36 C35 R5 C8 C37 C38 C9 C10 CUT OUT AREA C5 C7 Z1 R6 C13 C6 C21 C15 C16 C11 C12 Z2 C22 C14 D44014 C20 C30 R3 C18 R4 C28 VGG1B C27 VDD1B C26 VGG2B C4 VDD2B C34 C3 C33 Figure 9. MD7IC1812NR1 Test Circuit Component Layout — 1930–2170 MHz Table 10. MD7IC1812NR1 Test Circuit Component Designations and Values — 1930–2170 MHz Part Description Part Number Manufacturer C1, C2, C3, C4 3.3 pF Chip Capacitors ATC600F3R3BT250XT ATC C5, C7 2.0 pF Chip Capacitors ATC600F2R0BT250XT ATC C6, C8 1.5 pF Chip Capacitors ATC600F1R5BT250XT ATC C9, C10, C11, C12 0.6 pF Chip Capacitors ATC600F0R6BT250XT ATC C13, C14 0.8 pF Chip Capacitors ATC600F0R8BT250XT ATC C15, C16 1.2 pF Chip Capacitors ATC600F1R2BT250XT ATC C17, C18, C19, C20 10 pF Chip Capacitors ATC600F10RBT250XT ATC C21, C22 5.6 pF Chip Capacitors ATC600F5R6BT250XT ATC C23, C24, C25, C26, C27, C28, C29, C30, C31, C32, C33, C34 10 F Chip Capacitors C5750X7S2A106M230KB TDK C35, C36, C37, C38 22 nF Chip Capacitors GRM31BR72E223KW01L Murata R1, R2, R3, R4 2 K, 1/4 W Chip Resistors CRCW12062K00FKEA Vishay R5, R6 50 , 20 W Termination 375375--6X50--2 Anaren Z1, Z2 1800–2300 MHz Band, 90, 3 dB Hybrid Couplers X3C21P1-03S Anaren PCB Rogers RO4350B, 0.020, r = 3.66 D44014 MTL MD7IC1812NR1 MD7IC1812GNR1 10 RF Device Data Freescale Semiconductor, Inc. 32.6 3.84 MHz Channel Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 32.5 32.4 32.3 15.5 15 14.5 PAE Gps PARC 14 –50.5 0 –51 –0.05 32.2 –51.5 32.1 –52 32 31.9 1890 –52.5 ACPR 1930 1970 2010 2050 2090 f, FREQUENCY (MHz) 2130 2170 ACPR (dBc) Gps, POWER GAIN (dB) VDD = 28 Vdc, Pout = 1.3 W (Avg.), IDQ1A = IDQ1B = 20 mA 32.8 I DQ2A = IDQ2B = 70 mA, Single--Carrier W--CDMA 32.7 –0.1 –0.15 –0.2 PARC (dB) 16 32.9 PAE, POWER ADDED EFFICIENCY (%) TYPICAL CHARACTERISTICS — 1930–2170 MHz –0.25 –53 2210 Figure 10. Single--Carrier Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 1.3 Watts Avg. 60 PAE 50 ACPR 40 30 30 1900 MHz 2000 MHz 28 2200 MHz 2200 MHz Gps 20 2000 MHz 26 24 1900 MHz 1 10 Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 0 0 30 10 Pout, OUTPUT POWER (WATTS) AVG. --10 --20 --30 --40 ACPR (dBc) VDD = 28 Vdc, IDQ1A = IDQ1B = 20 mA IDQ2A = IDQ2B = 70 mA, Single--Carrier W--CDMA 34 3.84 MHz Channel Bandwidth 2200 MHz 32 2000 MHz 1900 MHz PAE, POWER ADDED EFFICIENCY (%) Gps, POWER GAIN (dB) 36 --50 --60 Figure 11. Single--Carrier W--CDMA Power Gain, Power Added Efficiency and ACPR versus Output Power 39 36 Gain GAIN (dB) 33 30 VDD = 28 Vdc Pin = 0 dBm IDQ1A = IDQ1B = 20 mA IDQ2A = IDQ2B = 70 mA 27 24 21 1450 1600 1750 1900 2050 2200 f, FREQUENCY (MHz) 2350 2500 2650 Figure 12. Broadband Frequency Response MD7IC1812NR1 MD7IC1812GNR1 RF Device Data Freescale Semiconductor, Inc. 11 PACKAGE DIMENSIONS MD7IC1812NR1 MD7IC1812GNR1 12 RF Device Data Freescale Semiconductor, Inc. MD7IC1812NR1 MD7IC1812GNR1 RF Device Data Freescale Semiconductor, Inc. 13 MD7IC1812NR1 MD7IC1812GNR1 14 RF Device Data Freescale Semiconductor, Inc. MD7IC1812NR1 MD7IC1812GNR1 RF Device Data Freescale Semiconductor, Inc. 15 MD7IC1812NR1 MD7IC1812GNR1 16 RF Device Data Freescale Semiconductor, Inc. MD7IC1812NR1 MD7IC1812GNR1 RF Device Data Freescale Semiconductor, Inc. 17 PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following resources to aid your design process. Application Notes AN1907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages AN1955: Thermal Measurement Methodology of RF Power Amplifiers AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices Software Electromigration MTTF Calculator RF High Power Model s2p File Development Tools Printed Circuit Boards To Download Resources Specific to a Given Part Number: 1. Go to http://www.freescale.com/rf 2. Search by part number 3. Click part number link 4. Choose the desired resource from the drop down menu REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 May 2015 Description Initial Release of Data Sheet MD7IC1812NR1 MD7IC1812GNR1 18 RF Device Data Freescale Semiconductor, Inc. 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All operating parameters, including “typicals,” must be validated for each customer application by customer’s technical experts. Freescale does not convey any license under its patent rights nor the rights of others. Freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/SalesTermsandConditions. Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc., Reg. U.S. Pat. & Tm. Off. All other product or service names are the property of their respective owners. E 2015 Freescale Semiconductor, Inc. MD7IC1812NR1 MD7IC1812GNR1 Document Number: RF Device Data MD7IC1812N Rev. 0, 5/2015Semiconductor, Inc. Freescale 19