Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MRF8P20161HS
Rev. 0, 10/2010
RF Power Field Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
Designed for CDMA base station applications with frequencies from 1880 to
2025 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulation formats.
• Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Volts,
IDQA = 550 mA, VGSB = 1.6 Vdc, Pout = 37 Watts Avg., IQ Magnitude
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @
0.01% Probability on CCDF.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
1880 MHz
16.5
46.2
6.9
--27.9
1900 MHz
16.5
46.0
6.9
--29.1
1920 MHz
16.4
45.8
7.0
--30.4
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 1900 MHz, 142 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout)
• Typical Pout @ 3 dB Compression Point ≃ 147 Watts CW
Features
• Production Tested in a Symmetrical Doherty Configuration
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Large--Signal Load--Pull Parameters and Common
Source S--Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
• Designed for Digital Predistortion Error Correction Systems
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel.
MRF8P20161HSR3
1880--1920 MHz, 37 W AVG., 28 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFET
CASE 465H--02, STYLE 1
NI--780S--4
RFinA/VGSA 3
1 RFoutA/VDSA
RFinB/VGSB 4
2 RFoutB/VDSB
(Top View)
Figure 1. Pin Connections
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
CW
206
1.86
W
W/°C
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 74°C, 37 W CW, 28 Vdc, IDQA = 550 mA, VGSB = 1.6 V, 1900 MHz
Case Temperature 93°C, 160 W CW(4), 28 Vdc, IDQA = 550 mA, VGSB = 1.6 V, 1900 MHz
RθJC
CW Operation @ TC = 25°C
Derate above 25°C
Table 2. Thermal Characteristics
0.76
0.53
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
4. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
© Freescale Semiconductor, Inc., 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF8P20161HSR3
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 116 μAdc)
VGS(th)
1.2
1.8
2.7
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, IDA = 550 mAdc, Measured in Functional Test)
VGS(Q)
1.9
2.7
3.4
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 1.5 Adc)
VDS(on)
0.05
0.27
0.4
Vdc
Characteristic
Off Characteristics
(1)
On Characteristics (1)
Functional Tests (2,3) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 550 mA, VGSB = 1.6 Vdc, Pout = 37 W Avg.,
f = 1920 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR
measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Power Gain
Gps
15.0
16.4
18.0
dB
Drain Efficiency
ηD
42.2
45.8
—
%
PAR
6.5
7.0
—
dB
ACPR
—
--30.4
--27.3
dBc
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
(3)
Typical Broadband Performance
(In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 550 mA, VGSB = 1.6 Vdc,
Pout = 37 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR
measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
1880 MHz
16.5
46.2
6.9
--27.9
1900 MHz
16.5
46.0
6.9
--29.1
1920 MHz
16.4
45.8
7.0
--30.4
1. Each side of device measured separately.
2. Part internally matched both on input and output.
3. Measurement made with device in a Symmetrical Doherty configuration.
(continued)
MRF8P20161HSR3
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performance (1) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 550 mA, VGSB = 1.6 Vdc,
1880--1920 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
—
97
—
W
Pout @ 3 dB Compression Point, CW
P3dB
—
147
—
W
—
55
—
IMD Symmetry @ 30 W PEP, Pout where IMD Third Order
Intermodulation  30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
—
65
—
MHz
Gain Flatness in 40 MHz Bandwidth @ Pout = 37 W Avg.
GF
—
0.1
—
dB
Gain Variation over Temperature
(--30°C to +85°C)
∆G
—
0.01
—
dB/°C
∆P1dB
—
0.009
—
dB/°C
Output Power Variation over Temperature
(--30°C to +85°C)
MHz
1. Measurement made with device in a Symmetrical Doherty configuration.
MRF8P20161HSR3
RF Device Data
Freescale Semiconductor
3
VGA
C10
C20 C22
C8
Z1
C1
R1
C2
C18
C16
CUT OUT AREA
C3
C5
C24
VDA
R2 C6
C4
C
C14
C15
P
C12
C26
C13
C17
R3 C7
C11
C19
C9
VDB
C25
MRF8P20160H
Rev. 1
C21 C23
VGB
Figure 2. MRF8P20161HSR3 Test Circuit Component Layout
Table 5. MRF8P20161HSR3 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2, C12, C13
10 pF Chip Capacitors
ATC600F100JT250XT
ATC
C3
0.3 pF Chip Capacitor
ATC600F0R3BT250XT
ATC
C4, C5
1.1 pF Chip Capacitors
ATC600F1R1BT250XT
ATC
C6, C7, C18, C19
12 pF Chip Capacitors
ATC600F120JT250XT
ATC
C8, C9, C20, C21, C22, C23
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88L
Murata
C10, C11
22 μF, 35 V Tantalum Capacitors
T491X226K035AT
Kemet
C14, C15
2.0 pF Chip Capacitors
ATC600F2R0BT250XT
ATC
C16, C17
2.2 pF Chip Capacitors
ATC600F2R2BT250XT
ATC
C24, C25
220 μF, 50 V Electrolytic Capacitors
227CKS505M
Illinois Cap
C26
0.8 pF Chip Capacitor
ATC600F0R8BT250XT
ATC
R1
50 Ω, 4 W Chip Resistor
CW12010T0050GBK
ATC
R2, R3
8.25 Ω, 1/4 W Chip Resistors
CRCW12068R25FKEA
Vishay
Z1
1900 MHz Band 90°, 3 dB Chip Hybrid Coupler
GCS351--HYB1900
Soshin
PCB
0.020″, εr = 3.5
RO4350B
Rogers
MRF8P20161HSR3
4
RF Device Data
Freescale Semiconductor
Single--ended
λ
4
λ
Quadrature combined
4
λ
4
λ
λ
2
2
Doherty
Push--pull
Figure 3. Possible Circuit Topologies
MRF8P20161HSR3
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
Gps
16.4
16.2
43
42
3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @
0.01% Probability on CCDF
16.3
44
PARC
IRL
--25
--18
--26.2
--20
16.1
--27.4
16
--28.6
15.9
ACPR
15.8
1860
1870
1880
1890
1900
1910
1920
1930
--29.8
--31
1940
--22
--24
--26
--28
--3
--3.2
--3.4
--3.6
--3.8
PARC (dB)
16.6 VDD = 28 Vdc, Pout = 37 W (Avg.), IDQA = 550 mA
V
= 1.6 Vdc, Single--Carrier W--CDMA
16.5 GSB
45
IRL, INPUT RETURN LOSS (dB)
ηD
ηD, DRAIN
EFFICIENCY (%)
46
ACPR (dBc)
Gps, POWER GAIN (dB)
16.8
16.7
--4
f, FREQUENCY (MHz)
IMD, INTERMODULATION DISTORTION (dBc)
Figure 4. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 37 Watts Avg.
--10
VDD = 28 Vdc, Pout = 30 W (PEP)
IDQA = 550 mA, VGSB = 1.6 Vdc, Two--Tone Measurements
--20 (f1 + f2)/2 = Center Frequency of 1900 MHz
IM3--U
--30
IM3--L
IM5--L
--40
--60
IM5--U
IM7--L
--50
IM7--U
1
10
100
TWO--TONE SPACING (MHz)
Figure 5. Intermodulation Distortion Products
versus Two--Tone Spacing
ηD
Gps, POWER GAIN (dB)
16
15
14
13
12
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
--1 dB = 16 W
17
--1
--2 dB = 24.5 W
--2
VDD = 28 Vdc
Input Signal PAR = 9.9 dB
IDQA = 550 mA
@ 0.01% Probability on CCDF
VGSB = 1.6 Vdc
f = 1900 MHz
PARC
Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
--5
10
30
50
70
50
--20
30
--3 dB = 34.5 W
--4
--15
40
Gps
--3
--6
ACPR
60
90
20
--25
--30
ACPR (dBc)
0
ηD, DRAIN EFFICIENCY (%)
18
--35
10
--40
0
--45
110
Pout, OUTPUT POWER (WATTS)
Figure 6. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
MRF8P20161HSR3
6
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
16
ACPR
1920 MHz
1900 MHz
15
1900 MHz
1880 MHz
13
1920 MHz
50
--10
40
20
Gps
10
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
12
0
30
1880 MHz
14
60
1
10
0
300
100
--20
--30
--40
ACPR (dBc)
17
Gps, POWER GAIN (dB)
ηD
VDD = 28 Vdc, IDQA = 550 mA, VGSB = 1.6 Vdc
Single--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth
ηD, DRAIN EFFICIENCY (%)
18
--50
--60
Pout, OUTPUT POWER (WATTS) AVG.
Figure 7. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
0
18
Gain
--10
15
--20
IRL
--30
9
6
VDD = 28 Vdc
Pin = 0 dBm
IDQA = 550 mA
VGSB = 1.6 Vdc
3
0
1750 1800
1850
1900
1950 2000
2050
2100
2150
IRL (dB)
GAIN (dB)
12
--40
--50
--60
2200
f, FREQUENCY (MHz)
Figure 8. Broadband Frequency Response
W--CDMA TEST SIGNAL
10
100
0
--10
--30
Input Signal
0.1
0.01
0
2
4
6
--40
--50
--60
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
0.001
0.0001
3.84 MHz
Channel BW
--20
1
(dB)
PROBABILITY (%)
10
+ACPR in 3.84 MHz
Integrated BW
--ACPR in 3.84 MHz
Integrated BW
--70
--80
8
10
PEAK--TO--AVERAGE (dB)
Figure 9. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
12
--90
--100
--9
--7.2 --5.4
--3.6 --1.8
0
1.8
3.6
5.4
7.2
9
f, FREQUENCY (MHz)
Figure 10. Single--Carrier W--CDMA Spectrum
MRF8P20161HSR3
RF Device Data
Freescale Semiconductor
7
VDD = 28 Vdc, IDQA = 550 mA
Max Pout (1)
f
MHz
Watts
dBm
Zsource
Ω
Zload
Ω
1880
103
50.1
8.74 -- j9.81
2.08 -- j5.64
1930
108
50.3
13.6 -- j9.01
2.29 -- j5.66
1990
107
50.3
17.6 + j0.07
1.52 -- j5.96
2025
105
50.2
14.6 + j4.42
1.75 -- j5.54
(1) Maximum output power measurement reflects pulsed 1 dB gain compression.
Zsource = Test circuit impedance as measured from gate contact to ground.
Zload = Test circuit impedance as measured from drain contact to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
Z
source
load
Figure 11. Carrier Side Load Pull Performance — Maximum P1dB Tuning
VDD = 28 Vdc, IDQA = 550 mA
f
MHz
Max Eff. (1)
%
Zsource
Ω
Zload
Ω
1880
62.7
8.74 -- j9.81
3.61 -- j2.84
1930
66.2
13.6 -- j9.01
3.84 -- j4.10
1990
63.5
17.6 + j0.07
3.02 -- j5.11
2025
64.1
14.6 + j4.42
3.30 -- j4.36
(1) Maximum efficiency measurement reflects pulsed 1 dB gain compression.
Zsource = Test circuit impedance as measured from gate contact to ground.
Zload = Test circuit impedance as measured from drain contact to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 12. Carrier Side Load Pull Performance — Maximum Efficiency Tuning
MRF8P20161HSR3
8
RF Device Data
Freescale Semiconductor
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
VDD = 28 Vdc, IDQA = 550 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
56
Ideal
Pout, OUTPUT POWER (dBm)
55
54
1930 MHz
53
1930 MHz
52
51
Actual
50
49
48
1990 MHz
2025 MHz
1880 MHz
47
46
45
28
29
30
31
34
33
32
35
1990 MHz
1880 MHz
2025 MHz
36
37
38
39
Pin, INPUT POWER (dBm)
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
P1dB
P3dB
f
(MHz)
Watts
dBm
Watts
dBm
1880
102
50.1
126
51.0
1930
108
50.3
130
51.1
1990
105
50.2
129
51.1
2025
105
50.2
124
50.9
Test Impedances per Compression Level
f
(MHz)
Zsource
Ω
Zload
Ω
1880
P1dB
8.74 -- j9.81
2.08 -- j5.64
1930
P1dB
13.6 -- j9.01
2.29 -- j5.66
1990
P1dB
17.6 + j0.07
1.52 -- j5.96
2025
P1dB
14.6 + j4.42
1.75 -- j5.54
Figure 13. Pulsed CW Output Power
versus Input Power @ 28 V
NOTE: Measurement made on the Class AB, carrier side of the device.
MRF8P20161HSR3
RF Device Data
Freescale Semiconductor
9
PACKAGE DIMENSIONS
MRF8P20161HSR3
10
RF Device Data
Freescale Semiconductor
MRF8P20161HSR3
RF Device Data
Freescale Semiconductor
11
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents and software to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• .s2p File
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
Oct. 2010
Description
• Initial Release of Data Sheet
MRF8P20161HSR3
12
RF Device Data
Freescale Semiconductor
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MRF8P20161HSR3
Document
Number:
RF
Device
Data MRF8P20161HS
Rev. 0, 10/2010
Freescale
Semiconductor
13