Document Number: MW7IC2725N Rev. 3, 1/2010 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2725N wideband integrated circuit is designed with on- chip matching that makes it usable from 2300- 2700 MHz. This multi- stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats. • Typical WiMAX Performance: VDD = 28 Volts, IDQ1 = 77 mA, IDQ2 = 275 mA, Pout = 4 Watts Avg., f = 2700 MHz, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. Power Gain — 28.5 dB Power Added Efficiency — 17% Device Output Signal PAR — 9 dB @ 0.01% Probability on CCDF ACPR @ 8.5 MHz Offset — -50 dBc in 1 MHz Channel Bandwidth Driver Applications • Typical WiMAX Performance: VDD = 28 Volts, IDQ1 = 77 mA, IDQ2 = 275 mA, Pout = 26 dBm Avg., f = 2700 MHz, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. Power Gain — 27.8 dB Power Added Efficiency — 3.2% Device Output Signal PAR — 9 dB @ 0.01% Probability on CCDF ACPR @ 8.5 MHz Offset — -56 dBc in 1 MHz Channel Bandwidth • Capable of Handling 10:1 VSWR, @ 32 Vdc, 2600 MHz, 40 Watts CW Output Power (3 dB Input Overdrive from Rated Pout) • Stable into a 5:1 VSWR. All Spurs Below -60 dBc @ 100 mW to 5 W CW Pout • Typical Pout @ 1 dB Compression Point ] 25 Watts CW Features • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters • On-Chip Matching (50 Ohm Input, DC Blocked) • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1) • Integrated ESD Protection • 225°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. VDS1 RFin RFout/VDS2 VGS1 Quiescent Current Temperature Compensation (1) VGS2 VDS1 Figure 1. Functional Block Diagram MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 2500-2700 MHz, 4 W AVG., 28 V WiMAX RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS CASE 1886-01 TO-270 WB-16 PLASTIC MW7IC2725NR1 CASE 1887-01 TO-270 WB-16 GULL PLASTIC MW7IC2725GNR1 CASE 1329-09 TO-272 WB-16 PLASTIC MW7IC2725NBR1 GND VDS1 NC NC NC 1 2 3 4 5 16 15 GND NC RFin 6 14 RFout/VDS2 NC VGS1 VGS2 VDS1 GND 7 8 9 10 11 13 12 NC GND (Top View) Note: Exposed backside of the package is the source terminal for the transistors. Figure 2. Pin Connections 1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987. © Freescale Semiconductor, Inc., 2008, 2010. All rights reserved. RF Device Data Freescale Semiconductor MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 1 Table 1. Maximum Ratings Symbol Value Unit Drain-Source Voltage Rating VDS -0.5, +65 Vdc Gate-Source Voltage VGS -0.5, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg -65 to +150 °C TC 150 °C Case Operating Temperature Operating Junction Temperature (1,2) Input Power TJ 225 °C Pin 22 dBm Symbol Value (2,3) Unit Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case °C/W RθJC WiMAX Application (Case Temperature 75°C, Pout = 4 W Avg.) Stage 1, 28 Vdc, IDQ1 = 77 mA Stage 2, 28 Vdc, IDQ2 = 275 mA 5.9 1.4 CW Application (Case Temperature 81°C, Pout = 25 W CW) Stage 1, 28 Vdc, IDQ1 = 77 mA Stage 2, 28 Vdc, IDQ2 = 275 mA 5.5 1.3 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22-A114) 1B (Minimum) Machine Model (per EIA/JESD22-A115) A (Minimum) Charge Device Model (per JESD22-C101) II (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD22-A113, IPC/JEDEC J-STD-020 Rating Package Peak Temperature Unit 3 260 °C Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate-Source Leakage Current (VGS = 1.5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 20 μAdc) VGS(th) 1.2 1.9 2.7 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, IDQ1 = 77 mA) VGS(Q) — 2.7 — Vdc Fixture Gate Quiescent Voltage (VDD = 28 Vdc, IDQ1 = 77 mAdc, Measured in Functional Test) VGG(Q) 12.5 15.8 19.5 Vdc Characteristic Stage 1 - Off Characteristics Stage 1 - On Characteristics 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. (continued) MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 2 RF Device Data Freescale Semiconductor Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate-Source Leakage Current (VGS = 1.5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 80 μAdc) VGS(th) 1.2 1.9 2.7 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, IDQ2 = 275 mAdc) VGS(Q) — 2.7 — Vdc Fixture Gate Quiescent Voltage (VDD = 28 Vdc, IDQ2 = 275 mAdc, Measured in Functional Test) VGG(Q) 11 14 18 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 800 mAdc) VDS(on) 0.15 0.47 0.8 Vdc Coss — 111 — pF Stage 2 - Off Characteristics Stage 2 - On Characteristics Stage 2 - Dynamic Characteristics (1) Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA, Pout = 4 W Avg., f = 2700 MHz, WiMAX, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. ACPR measured in 1 MHz Channel Bandwidth @ ±8.5 MHz Offset. Power Gain Gps 25.5 28.5 30.5 dB Power Added Efficiency PAE 15 17 — % Output Peak-to-Average Ratio @ 0.01% Probability on CCDF PAR — 9 — dB ACPR — -50 -46 dBc IRL — -15 -10 dB Adjacent Channel Power Ratio Input Return Loss Typical Performances OFDM Signal - 10 MHz Channel Bandwidth (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA, Pout = 4 W Avg., f = 2700 MHz, WiMAX, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. Relative Constellation Error (2) Error Vector Magnitude (2) 1. Part internally matched both on input and output. 2. RCE = 20Log(EVM/100) RCE — -33 — dB EVM — 2.2 — % rms (continued) MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 RF Device Data Freescale Semiconductor 3 Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA, 2500- 2700 MHz Bandwidth Pout @ 1 dB Compression Point, CW P1dB — 25 — — 50 — W IMD Symmetry @ 27 W PEP, Pout where IMD Third Order Intermodulation ` 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) IMDsym VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) VBWres — 90 — MHz Gain Flatness in 200 MHz Bandwidth @ Pout = 4 W Avg. GF — 0.5 — dB Average Deviation from Linear Phase in 200 MHz Bandwidth @ Pout = 25 W CW Φ — 2.1 — ° Delay — 2.3 — ns Part-to-Part Insertion Phase Variation @ Pout = 25 W CW, f = 2600 MHz, Six Sigma Window ΔΦ — 22 — ° Gain Variation over Temperature (-30 °C to +85°C) ΔG — 0.036 — dB/°C ΔP1dB — 0.003 — dBm/°C Average Group Delay @ Pout = 25 W CW, f = 2600 MHz Output Power Variation over Temperature (-30 °C to +85°C) MHz Typical Driver Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA, Pout = 26 dBm Avg., f = 2700 MHz, WiMAX, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. ACPR measured in 1 MHz Channel Bandwidth @ ±8.5 MHz Offset. Power Gain Gps — 27.8 — dB Power Added Efficiency PAE — 3.2 — % Output Peak-to-Average Ratio @ 0.01% Probability on CCDF PAR — 9 — dB ACPR — -56 — dBc Input Return Loss IRL — -13 — dB Relative Constellation Error @ Pout = 1.25 W Avg. (1) RCE — -40 — dB Adjacent Channel Power Ratio 1. RCE = 20Log(EVM/100) MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 4 RF Device Data Freescale Semiconductor VDD1 VD2 B1 28 V C17 C16 C9 C15 C8 C14 C7 RF INPUT 1 2 3 4 5 Z1 Z2 Z3 NC DUT C13 NC 16 C12 NC 15 NC NC NC Z13 Z4 14 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 Z14 RF OUTPUT 6 C11 7 NC 8 9 C4 C5 C6 C1 10 11 NC C10 Quiescent Current Temperature Compensation NC 13 NC 12 VG1 R4 R5 C2 R6 C3 VG2 R1 R2 R3 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 0.500″ x 0.027″ Microstrip 0.075″ x 0.127″ Microstrip 1.640″ x 0.027″ Microstrip 0.100″ x 0.042″ Microstrip 0.151″ x 0.268″ Microstrip 0.025″ x 0.268″ x 0.056″ Taper 0.050″ x 0.056″ Microstrip 0.356″ x 0.056″ Microstrip Z9 Z10 Z11 Z12 Z13* Z14 PCB 0.040″ x 0.061″ Microstrip 0.020″ x 0.050″ Microstrip 0.050″ x 0.050″ Microstrip 0.050″ x 0.027″ Microstrip 0.338″ x 0.020″ Microstrip 1.551″ x 0.027″ Microstrip Rogers R04350B, 0.0133″, εr = 3.48 * Line length includes microstrip bends Figure 3. MW7IC2725NR1(GNR1)(NBR1) Test Circuit Schematic Table 6. MW7IC2725NR1(GNR1)(NBR1) Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1 47 Ω, 100 MHz Short Ferrite Bead 2743019447 Fair-Rite C1, C4, C7, C12, C15 6.8 pF Chip Capacitors ATC600S6R8CT250XT ATC C2, C5, C8, C13 10 nF Chip Capacitors C0603C103J5RAC Kemet C3, C6, C9, C14 1 μF, 50 V Chip Capacitors GRM32RR71H105KA01B Murata C10 2.4 pF Chip Capacitor ATC600S2R4BT250XT ATC C11 3.3 pF Chip Capacitor ATC600S3R3BT250XT ATC C16, C17 10 μF, 50 V Chip Capacitors GRM55DR61H106KA88B Murata R1, R4 12 KΩ, 1/4 W Chip Resistors CRCW12061202FKEA Vishay R2, R3, R5, R6 1 KΩ, 1/4 W Chip Resistors CRCW12061001FKEA Vishay MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 RF Device Data Freescale Semiconductor 5 MW7IC2725N Rev. 1.3 C16 C17 C15 C9 C8 C7 R5 C1 R6 VG1 R1 R2 R3 C2 C6 C3 CUT OUT AREA R4 C14 C12 C13 C4 C5 B1 C10 C11 VG2 Figure 4. MW7IC2725NR1(GNR1)(NBR1) Test Circuit Component Layout MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 6 RF Device Data Freescale Semiconductor Gps, POWER GAIN (dB) 28.2 17 Gps 16 28 15 V = 28 Vdc, Pout = 4 W (Avg.), IDQ1 = 77 mA, IDQ2 = 275 mA 27.8 DD OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel 27.6 Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF 27.4 14 27.2 ACPR 27 -53 -16 -54 -18 -55 -56 PARC -57 26.8 IRL 26.6 2500 2525 2550 2575 2600 2625 2650 2675 -20 -22 -24 -58 2700 -26 -0.2 -0.4 -0.6 -0.8 PARC (dB) 28.4 IRL, INPUT RETURN LOSS (dB) 18 PAE ACPR (dBc) 28.6 PAE, POWER ADDED EFFICIENCY (%) TYPICAL CHARACTERISTICS -1 -1.2 f, FREQUENCY (MHz) 3 PAE Gps 2.5 28 VDD = 28 Vdc, Pout = 26 dBm (Avg.), IDQ1 = 77 mA, IDQ2 = 275 mA 27.8 OFDM 802.16d, 64 QAM 3/ , 4 Bursts, 10 MHz Channel Bandwidth 4 27.6 Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF 2 -56 -10 27.4 -57 -15 27.2 PARC 1.5 -58 ACPR 27 -59 26.8 -60 IRL 26.6 2500 2525 2550 2575 2600 2625 2650 2675 ACPR (dBc) Gps, POWER GAIN (dB) 28.2 -61 2700 -20 -25 -30 -35 -0.2 -0.4 -0.6 -0.8 PARC (dB) 3.5 28.4 IRL, INPUT RETURN LOSS (dB) 28.6 PAE, POWER ADDED EFFICIENCY (%) Figure 5. WiMAX Broadband Performance @ Pout = 4 Watts Avg. -1 -1.2 f, FREQUENCY (MHz) Figure 6. WiMAX Broadband Performance @ Pout = 26 dBm Avg. 30 30 IDQ1 = 103 mA 29 344 mA 28 275 mA 27 29 96 mA Gps, POWER GAIN (dB) Gps, POWER GAIN (dB) IDQ2 = 412 mA 206 mA 26 25 137 mA VDD = 28 Vdc IDQ1 = 77 mA f = 2600 MHz 24 28 77 mA 27 58 mA 26 25 39 mA VDD = 28 Vdc IDQ2 = 275 mA f = 2600 MHz 24 23 23 0.1 1 10 100 0.1 1 10 Pout, OUTPUT POWER (WATTS) CW Pout, OUTPUT POWER (WATTS) CW Figure 7. Power Gain versus Output Power @ IDQ1 = 77 mA Figure 8. Power Gain versus Output Power @ IDQ2 = 275 mA 100 MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 RF Device Data Freescale Semiconductor 7 IMD, INTERMODULATION DISTORTION (dBc) TYPICAL CHARACTERISTICS 0 VDD = 28 Vdc, Pout = 27 W (PEP), IDQ1 = 77 mA IDQ2 = 275 mA, Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 2600 MHz -10 -20 IM3-U -30 IM3-L IM5-L -40 IM5-U IM7-L -50 IM7-U -60 10 1 100 TWO-T ONE SPACING (MHz) Figure 9. Intermodulation Distortion Products versus Tone Spacing 27.5 27 26.5 26 0 30 ACPR -1 Gps -1 dB = 4.01 W -2 25 20 15 -3 -4 -2 dB = 6.21 W 10 PARC -3 dB = 8.59 W -30 35 VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA f = 2600 MHz, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% PAE Probability on CCDF 1 3 6 9 12 -40 -45 -50 -55 -60 5 -5 -35 ACPR (dBc) 28 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) Gps, POWER GAIN (dB) 28.5 1 PAE, POWER ADDED EFICIENCY (%) 29 15 Pout, OUTPUT POWER (WATTS) Figure 10. Output Peak-to-Average Ratio Compression (PARC) versus Output Power -15 VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA f = 2600 MHz, OFDM 802.16d, 64 QAM 3/4, 4 Bursts 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF 40 35 -40 _C 25_C 85_C 85_C TC = -40_C 25_C 20 -25 -30 25_C -40 _C -35 30 25 -20 85_C -40 Gps -45 15 PAE 10 -50 ACPR 5 ACPR (dBc) PAE, POWER ADDED EFFICIENCY (%), Gps, POWER GAIN (dB) 45 -55 0 -60 1 10 50 Pout, OUTPUT POWER (WATTS) AVG. WiMAX Figure 11. WiMAX, ACPR, Power Gain and Power Added Efficiency versus Output Power MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 8 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 0 109 19 -10 108 13 -20 25 S21 S11 1 -5 1800 VDD = 28 Vdc IDQ1 = 77 mA, IDQ2 = 275 mA 2000 2200 2400 2600 2800 3000 3200 MTTF (HOURS) -30 7 S11 (dB) S21 (dB) 1st Stage 107 2nd Stage 106 -40 105 -50 3400 104 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) f, FREQUENCY (MHz) Figure 12. Broadband Frequency Response This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 4 W Avg., and PAE = 17%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 13. MTTF versus Junction Temperature WIMAX TEST SIGNAL 100 -10 10 -20 -30 1 -40 0.1 (dB) PROBABILITY (%) Input Signal 10 MHz Channel BW -50 0.01 OFDM 802.16d, 64 QAM 3/4, 4 Bursts 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF 0.001 0.0001 0 2 4 6 -60 -70 8 PEAK-T O-A VERAGE (dB) Figure 14. OFDM 802.16d Test Signal 10 -80 ACPR in 1 MHz Integrated BW -90 -20 -15 -10 ACPR in 1 MHz Integrated BW -5 0 5 10 15 20 f, FREQUENCY (MHz) Figure 15. WiMAX Spectrum Mask Specifications MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 RF Device Data Freescale Semiconductor 9 Zo = 50 Ω f = 2700 MHz f = 2700 MHz Zload Zsource f = 2500 MHz f = 2500 MHz VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA, Pout = 4 W Avg. f MHz Zsource W Zload W 2500 36.381 - j4.271 5.717 - j3.618 2525 36.041 - j3.328 5.624 - j3.187 2550 35.753 - j2.363 5.578 - j2.770 2575 35.516 - j1.380 5.589 - j2.412 2600 35.333 - j0.381 5.586 - j2.088 2625 35.203 + j0.635 5.579 - j1.807 2650 35.126 + j1.664 5.552 - j1.559 2675 35.104 + j2.707 5.564 - j1.335 2700 35.138 + j3.760 5.568 - j1.164 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 16. Series Equivalent Source and Load Impedance MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 10 RF Device Data Freescale Semiconductor Table 7. Common Source S-Parameters (VDD = 28 V, IDQ1 = 77 mA, IDQ2 = 275 mA, TC = 25°C, 50 Ohm System) S11 S21 S12 S22 f MHz |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 1500 0.735 61.0 0.001 -167.6 0.000501 26.6 0.992 167.9 1550 0.729 53.3 0.004 -146.0 0.000361 34.7 0.993 166.3 1600 0.715 46.5 0.014 -146.4 0.000114 109.5 0.991 164.6 1650 0.695 39.8 0.039 -152.5 0.000385 148.4 0.992 162.7 1700 0.665 32.9 0.110 -166.8 0.000773 155.6 0.989 160.5 1750 0.619 25.0 0.299 169.4 0.00134 153.2 0.979 157.8 1800 0.549 15.1 0.708 134.4 0.00198 143.0 0.944 155.2 1850 0.452 2.6 1.335 96.3 0.00250 131.2 0.903 153.9 1900 0.332 -14.4 2.195 62.1 0.00290 121.7 0.879 153.0 1950 0.199 -40.1 3.445 32.7 0.00320 113.8 0.847 151.0 2000 0.089 -91.9 5.724 4.8 0.00345 108.5 0.817 147.7 2050 0.078 167.4 10.041 -26.2 0.00382 107.0 0.749 140.6 2100 0.116 90.3 19.072 -65.1 0.00525 105.3 0.571 125.2 2150 0.170 -13.2 32.642 -126.0 0.00781 77.9 0.054 160.2 2200 0.192 -93.2 31.339 171.3 0.00640 41.0 0.555 -144.4 2250 0.177 -123.0 26.174 130.3 0.00432 24.9 0.726 -160.3 2300 0.163 -132.6 23.605 98.7 0.00294 22.3 0.770 -167.1 2350 0.153 -140.5 22.427 70.0 0.00224 31.0 0.789 -170.1 2400 0.119 -153.6 21.922 41.7 0.00208 42.5 0.800 -171.0 2450 0.059 -165.3 21.172 14.2 0.00216 48.9 0.820 -171.2 2500 0.014 -50.7 20.172 -12.5 0.00227 48.9 0.850 -171.3 2550 0.055 -55.0 19.222 -39.5 0.00213 51.4 0.889 -171.7 2600 0.056 -84.7 17.366 -66.8 0.00209 57.8 0.933 -173.2 2650 0.029 177.4 14.562 -91.5 0.00247 65.6 0.961 -175.8 2700 0.069 103.3 12.199 -1 11.7 0.00286 62.2 0.968 -178.0 2750 0.122 84.1 10.485 -130.4 0.00308 56.3 0.969 -179.5 2800 0.287 59.8 8.086 -154.4 0.00326 50.9 0.969 179.3 2850 0.184 -5.4 7.102 -152.5 0.00292 39.2 0.966 178.6 2900 0.129 -17.4 6.753 -169.3 0.00256 38.6 0.969 178.0 2950 0.128 -41.0 6.107 175.4 0.00232 38.5 0.970 177.4 3000 0.164 -65.7 5.445 160.8 0.00213 39.9 0.972 176.9 3050 0.223 -86.2 4.867 146.7 0.00196 42.0 0.972 176.4 3100 0.297 -100.4 4.363 133.2 0.00183 46.0 0.973 176.0 3150 0.374 -1 10.4 3.918 120.0 0.00176 51.4 0.974 175.5 3200 0.447 -1 18.0 3.534 107.2 0.00181 56.5 0.974 174.9 3250 0.515 -123.4 3.198 95.3 0.00191 60.9 0.975 174.3 3300 0.563 -128.0 2.951 83.3 0.00211 58.8 0.975 173.7 3350 0.619 -131.8 2.761 71.2 0.00206 63.0 0.976 173.0 3400 0.651 -136.0 2.581 58.8 0.00218 64.8 0.975 172.3 3450 0.671 -140.1 2.418 46.0 0.00237 68.3 0.975 171.6 (continued) MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 RF Device Data Freescale Semiconductor 11 Table 7. Common Source S-Parameters (VDD = 28 V, IDQ1 = 77 mA, IDQ2 = 275 mA, TC = 25°C, 50 Ohm System) (continued) S11 S21 S12 S22 f MHz |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 3500 0.679 -144.4 2.257 32.6 0.00265 68.5 0.974 171.0 3550 0.677 -147.9 2.054 19.2 0.00280 65.0 0.976 170.5 3600 0.661 -153.5 1.851 5.0 0.00281 67.1 0.976 170.0 3650 0.696 -153.8 1.644 -5.8 0.00328 69.3 0.976 169.6 3700 0.721 -161.3 1.453 -19.4 0.00350 65.8 0.977 169.4 3750 0.737 -168.1 1.243 -32.1 0.00357 64.5 0.978 169.2 3800 0.753 -174.7 1.042 -43.7 0.00374 64.5 0.979 169.2 3850 0.771 179.2 0.859 -54.3 0.00401 62.5 0.980 169.2 3900 0.788 174.4 0.708 -62.8 0.00407 58.4 0.980 169.3 3950 0.812 169.8 0.583 -71.5 0.00416 57.7 0.981 169.3 4000 0.829 166.0 0.477 -79.0 0.00427 55.8 0.982 169.3 MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 12 RF Device Data Freescale Semiconductor ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS 50 50 Ideal P3dB = 45.73 dBm (36 W) 44 Actual 42 40 38 VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA Pulsed CW, 10 μsec(on), 10% Duty Cycle, f = 2500 MHz 36 34 Pout, OUTPUT POWER (dBm) Pout, OUTPUT POWER (dBm) P1dB = 44.61 dBm (29 W) 46 46 Ideal P3dB = 44.46 dBm (35 W) 48 48 P1dB = 45.42 dBm (28 W) Actual 44 42 40 38 36 VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA Pulsed CW, 10 μsec(on), 10% Duty Cycle, f = 2700 MHz 34 32 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 2 3 4 5 6 Pin, INPUT POWER (dBm) 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V Test Impedances per Compression Level Test Impedances per Compression Level P1dB Zsource Ω Zload Ω 42.7 + j11.6 4.86 - j1.63 Figure 17. Pulsed CW Output Power versus Input Power @ 28 V @ 2500 MHz P1dB Zsource Ω Zload Ω 39.5 - j8.7 3.53 - j1.66 Figure 18. Pulsed CW Output Power versus Input Power @ 28 V @ 2700 MHz MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 RF Device Data Freescale Semiconductor 13 PACKAGE DIMENSIONS MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 14 RF Device Data Freescale Semiconductor MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 RF Device Data Freescale Semiconductor 15 MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 16 RF Device Data Freescale Semiconductor MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 RF Device Data Freescale Semiconductor 17 MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 18 RF Device Data Freescale Semiconductor MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 RF Device Data Freescale Semiconductor 19 MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 20 RF Device Data Freescale Semiconductor MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 RF Device Data Freescale Semiconductor 21 MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 22 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE Refer to the following documents to aid your design process. Application Notes • AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family • AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family • AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages • AN3789: Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part's Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 June 2008 • Initial Release of Data Sheet 1 July 2008 • Added MW7IC2725NBR1 device and corresponding case outline information to data sheet. 2 Oct. 2008 • Added Fig. 13, MTTF versus Junction Temperature, p. 9 3 Jan. 2010 • Modified VSWR rating to show the 3 dB overdrive capability, p. 1 • Maximum Ratings table: Added Case Operating Temperature and set limit to 150°C. Corrected maximum input power level to the tested value from 20 dBm to 22 dBm, p. 2 • Added AN3789, Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages to Product Documentation, Application Notes, p. 23 MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 RF Device Data Freescale Semiconductor 23 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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