Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MHT2000N
Rev. 0, 5/2014
RF LDMOS Integrated Power Amplifiers
Wideband integrated circuit is suitable for industrial heating applications
operating at 2450 MHz. This multi--stage structure is rated for 26 to 32 V
operation in both CW and pulse applications.
 Typical CW Performance: VDD = 28 Vdc, IDQ1 = 55 mA, IDQ2 = 195 mA,
Pout = 25 W CW, f = 2450 MHz
Power Gain — 27.7 dB
Power Added Efficiency — 43.8%
 Capable of Handling 10:1 VSWR, @ 28 Vdc, 2450 MHz, 25 W CW Output
Power
Features
 Multi--stage structure is rated for 26 to 32 V Operation
 Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function (1)
 Integrated ESD Protection
 Excellent Thermal Stability
 225C Capable Plastic Package
 In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13--inch Reel.
MHT2000NR1
MHT2000GNR1
2450 MHz, 25 W CW, 28 V
INDUSTRIAL HEATING, RUGGED
RF LDMOS INTEGRATED
POWER AMPLIFIERS
TO--270WB--16
PLASTIC
MHT2000NR1
TO--270WBG--16
PLASTIC
MHT2000GNR1
VDS1
RFin
VGS1
VGS2
RFout/VDS2
Quiescent Current
Temperature Compensation (1)
VDS1
GND
VDS1
NC
NC
NC
1
2
3
4
5
16
15
GND
NC
RFin
6
14
RFout/VDS2
NC
VGS1
VGS2
VDS1
GND
7
8
9
10
11
13
12
NC
GND
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family, and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987.
 Freescale Semiconductor, Inc., 2014. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MHT2000NR1 MHT2000GNR1
1
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain--Source Voltage
Rating
VDS
–0.5, +65
Vdc
Gate--Source Voltage
VGS
–0.5, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
–65 to +150
C
TC
150
C
Case Operating Temperature
Operating Junction Temperature
(1,2)
Input Power
TJ
225
C
Pin
20
dBm
Symbol
Value (2,3)
Unit
Table 2. Thermal Characteristics (In Freescale Narrowband Test Fixture)
Characteristic
Thermal Resistance, Junction to Case
(Case Temperature 80C, Pout = 25 W CW)
Stage 1, 28 Vdc, IDQ1 = 55 mA
Stage 2, 28 Vdc, IDQ2 = 195 mA
RJC
C/W
6.1
1.2
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
1B
Machine Model (per EIA/JESD22--A115)
A
Charge Device Model (per JESD22--C101)
II
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
3
260
C
Table 5. Electrical Characteristics (TC = 25C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
Adc
Gate--Source Leakage Current
(VGS = 1.5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
Adc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 20 Adc)
VGS(th)
1.2
1.9
2.7
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, IDQ1 = 55 mA) (4)
VGS(Q)
—
2.7
—
Vdc
Fixture Gate Quiescent Voltage
(VDD = 28 Vdc, IDQ1 = 55 mAdc) (4,5)
VGG(Q)
10.3
11.2
12.6
Vdc
Characteristic
Stage 1 -- Off Characteristics
Stage 1 -- On Characteristics
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
4. Measured in Freescale Narrowband Test Fixture.
5. See Appendix A for functional test measurements and test fixture.
(continued)
MHT2000NR1 MHT2000GNR1
2
RF Device Data
Freescale Semiconductor, Inc.
Table 5. Electrical Characteristics (TC = 25C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
Adc
Gate--Source Leakage Current
(VGS = 1.5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
Adc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 80 Adc)
VGS(th)
1.2
1.9
2.7
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, IDQ2 = 195 mAdc) (1)
VGS(Q)
—
2.7
—
Vdc
Fixture Gate Quiescent Voltage
(VDD = 28 Vdc, IDQ2 = 195 mAdc) (1,2)
VGG(Q)
9.5
10.5
11.5
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 800 mAdc)
VDS(on)
0.15
0.47
0.8
Vdc
Coss
—
111
—
pF
Stage 2 -- Off Characteristics
Stage 2 -- On Characteristics
Stage 2 -- Dynamic Characteristics (3)
Output Capacitance
(VDS = 28 Vdc  30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Narrowband Performance Specifications (4) (In Freescale Narrowband Test Fixture,(1) 50 ohm system) VDD = 28 Vdc, IDQ1 = 55 mA,
IDQ2 = 195 mA, Pout = 25 W CW, f = 2450 MHz
Power Gain
Gps
25.5
27.7
30.5
dB
Power Added Efficiency
PAE
41.5
43.8
—
%
Input Return Loss
IRL
—
–18
–10
dB
(2)
Functional Tests
(In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA, Pout = 4 W Avg., f = 2700 MHz,
WiMAX, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. ACPR
measured in 1 MHz Channel Bandwidth @ 8.5 MHz Offset.
Power Gain
Gps
25.5
28.5
30.5
dB
Power Added Efficiency
PAE
15
17
—
%
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
1.
2.
3.
4.
PAR
—
9
—
dB
ACPR
—
–50
–46
dBc
IRL
—
–15
–10
dB
Measured in Freescale Narrowband Test Fixture.
See Appendix A for functional test fixture documentation.
Part internally matched both on input and output.
Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull
wing (GN) parts.
MHT2000NR1 MHT2000GNR1
RF Device Data
Freescale Semiconductor, Inc.
3
VDD1
VD2
B1
C17
C16
C9
C15
28 V
C8
C14
C7
RF
INPUT
1
2
3
4
5
Z1
Z2
Z3
Z4
R4
R5
C1
10
11 NC
C13
NC 16
C12
NC 15
NC
NC
NC
7 NC
8
9
C5
VG1
DUT
Z13
14
6
C4
C6
NC
Z5
Z6
Z7
Z8
Z9
Z10
Z12 Z14
C11
C10
Quiescent Current
Temperature
Compensation
Z11
RF
OUTPUT
NC 13
NC 12
C2
R6
C3
VG2
R1
R2
R3
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
0.500 x 0.027 Microstrip
0.075 x 0.127 Microstrip
1.640 x 0.027 Microstrip
0.100 x 0.042 Microstrip
0.151 x 0.268 Microstrip
0.025 x 0.268 x 0.056 Taper
0.100 x 0.056 Microstrip
0.306 x 0.056 Microstrip
Z9
Z10
Z11
Z12
Z13*
Z14
PCB
0.040 x 0.061 Microstrip
0.020 x 0.050 Microstrip
0.050 x 0.050 Microstrip
0.050 x 0.027 Microstrip
0.338 x 0.020 Microstrip
1.551 x 0.027 Microstrip
Rogers R04350B, 0.0133, r = 3.48
* Line length includes microstrip bends
Figure 3. MHT2000NR1 Narrowband Test Circuit Schematic
Table 6. MHT2000NR1 Narrowband Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1
47 , 100 MHz Short Ferrite Bead
2743019447
Fair--Rite
C1, C4, C7, C12, C15
6.8 pF Chip Capacitors
ATC600S6R8CT250XT
ATC
C2, C5, C8, C13
10 nF Chip Capacitors
C0603C103J5RAC
Kemet
C3, C6, C9, C14
1 F, 50 V Chip Capacitors
GRM32RR71H105KA01B
Murata
C10
2.4 pF Chip Capacitor
ATC600S2R4BT250XT
ATC
C11
3.3 pF Chip Capacitor
ATC600S3R3BT250XT
ATC
C16, C17
10 F, 50 V Chip Capacitors
GRM55DR61H106KA88B
Murata
R1, R4
12 K, 1/4 W Chip Resistors
CRCW12061202FKEA
Vishay
R2, R3, R5, R6
1 K, 1/4 W Chip Resistors
CRCW12061001FKEA
Vishay
MHT2000NR1 MHT2000GNR1
4
RF Device Data
Freescale Semiconductor, Inc.
B1
C9
C8
C7
C4
R4
R5
C5
R6
C1
C2
VG1
C16
C15
C14
C13
CUT OUT AREA
C17
C12
C10
C11
C6
R2
R1
R3
VG2
C3
Figure 4. MHT2000NR1 Narrowband Test Circuit Component Layout
MHT2000NR1 MHT2000GNR1
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS — NARROWBAND
50
40
28
30
27
20
VDD = 28 Vdc
IDQ1 = 55 mA
IDQ2 = 195 mA
f = 2450 MHz
25
1
10
47
45
Actual
44
43
41
VDD = 28 Vdc, IDQ1 = 55 mA
IDQ2 = 195 mA, f = 2450 MHz
13
14
15
30
50
29
40
VD1 = 32 V
30
30 V
27
17
18
19
20
Figure 6. CW Output Power versus Input Power
Figure 5. Power Gain and Power Added Efficiency
versus CW Output Power
Gps, POWER GAIN (dB)
16
Pin, INPUT POWER (dBm)
Pout, OUTPUT POWER (WATTS) CW
28
Ideal
P1dB = 44.5 dBm (28.05 W)
46
42
0
100
10
P3dB = 44.9 dBm (30.9 W)
20
28 V
VD2 = 28 Vdc
IDQ1 = 55 mA
IDQ2 = 195 mA
f = 2450 MHz
26
25
1
0.1
10
PAE, POWER ADDED EFFICIENCY (%)
26
48
Pout, OUTPUT POWER (dBm)
29
49
PAE, POWER ADDED EFFICIENCY (%)
Gps, POWER GAIN (dB)
30
0
100
10
Pout, OUTPUT POWER (WATTS) CW
Figure 7. Power Gain and Power Added Efficiency
versus CW Output Power as a Function of VD1
50
28 V
29
30 V
32 V
28
40
30
30 V
27
VD2 = 28 V
20
32 V
VD1 = 28 Vdc
IDQ1 = 55 mA
IDQ2 = 195 mA
f = 2450 MHz
26
25
0.1
1
10
10
PAE, POWER ADDED EFFICIENCY (%)
Gps, POWER GAIN (dB)
30
0
100
Pout, OUTPUT POWER (WATTS) CW
Figure 8. Power Gain and Power Added Efficiency
versus CW Output Power as a Function of VD2
MHT2000NR1 MHT2000GNR1
6
RF Device Data
Freescale Semiconductor, Inc.
Gps, POWER GAIN (dB)
30
50
IDQ1 varied from
45 mA to 65 mA
40
in 5 mA steps
29
IDQ1 = 65 mA
28
30
60 mA
55 mA
27
20
45 mA
50 mA
VDD = 28 Vdc
IDQ2 = 195 mA
f = 2450 MHz
26
25
1
10
PAE, POWER ADDED EFFICIENCY (%)
TYPICAL CHARACTERISTICS — NARROWBAND
0
100
10
Pout, OUTPUT POWER (WATTS) CW
Figure 9. Power Gain and Power Added Efficiency
versus CW Output Power as a Function of IDQ1
50
28
215 mA
195 mA
IDQ2 = 235 mA
40
175 mA
27 155 mA
30
IDQ2 varied from
155 mA to 235 mA
in 20 mA steps
26
VDD = 28 Vdc
IDQ1 = 55 mA
f = 2450 MHz
25
1
10
20
PAE, POWER ADDED EFFICIENCY (%)
Gps, POWER GAIN (dB)
29
10
100
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Power Added Efficiency
versus CW Output Power as a Function of IDQ2
109
MTTF (HOURS)
108
1st Stage
107
2nd Stage
106
105
104
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 25 W CW, and PAE = 43.8%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 11. MTTF versus Junction Temperature
MHT2000NR1 MHT2000GNR1
RF Device Data
Freescale Semiconductor, Inc.
7
Zo = 50 
Zload
Zsource
f = 2450 MHz
f = 2450 MHz
VDD = 28 Vdc, IDQ1 = 55 mA, IDQ2 = 195 mA, Pout = 25 W CW
f
MHz
Zsource

Zload

2450
32 – j6.256
6.2 – j1.17
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 12. Series Equivalent Source and Load Impedance — Narrowband
MHT2000NR1 MHT2000GNR1
8
RF Device Data
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
MHT2000NR1 MHT2000GNR1
RF Device Data
Freescale Semiconductor, Inc.
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MHT2000NR1 MHT2000GNR1
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RF Device Data
Freescale Semiconductor, Inc.
MHT2000NR1 MHT2000GNR1
RF Device Data
Freescale Semiconductor, Inc.
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MHT2000NR1 MHT2000GNR1
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RF Device Data
Freescale Semiconductor, Inc.
MHT2000NR1 MHT2000GNR1
RF Device Data
Freescale Semiconductor, Inc.
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MHT2000NR1 MHT2000GNR1
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RF Device Data
Freescale Semiconductor, Inc.
MHT2000NR1 MHT2000GNR1
RF Device Data
Freescale Semiconductor, Inc.
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MHT2000NR1 MHT2000GNR1
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RF Device Data
Freescale Semiconductor, Inc.
MHT2000NR1 MHT2000GNR1
RF Device Data
Freescale Semiconductor, Inc.
17
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following resources to aid your design process.
Application Notes
 AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
 AN1955: Thermal Measurement Methodology of RF Power Amplifiers
 AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
 AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family
 AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages
Engineering Bulletins
 EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
 Electromigration MTTF Calculator
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software
& Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
May 2014
Description
 Initial Release of Data Sheet
MHT2000NR1 MHT2000GNR1
18
RF Device Data
Freescale Semiconductor, Inc.
APPENDIX A
MHT2000NR1 FUNCTIONAL TEST DATA, FIXTURE AND THERMAL DATA
B1
C16
C17
C15
C9
C8
C7
R5
C1
R6
R1
R2
R3
VG1
VG2
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
C2
C6
C3
0.500 x 0.027 Microstrip
0.075 x 0.127 Microstrip
1.640 x 0.027 Microstrip
0.100 x 0.042 Microstrip
0.151 x 0.268 Microstrip
0.025 x 0.268 x 0.056 Taper
0.050 x 0.056 Microstrip
0.356 x 0.056 Microstrip
CUT OUT AREA
R4
C12
C13
C4
C5
C14
C10
Z9
Z10
Z11
Z12
Z13*
Z14
PCB
C11
0.040 x 0.061 Microstrip
0.020 x 0.050 Microstrip
0.050 x 0.050 Microstrip
0.050 x 0.027 Microstrip
0.338 x 0.020 Microstrip
1.551 x 0.027 Microstrip
Rogers R04350B, 0.0133, r = 3.48
* Line length includes microstrip bends
Figure A--1. MHT2000NR1 Test Circuit Component Layout
Table A--1. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA, Pout = 4 W Avg., f = 2700 MHz,
WiMAX, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. ACPR
measured in 1 MHz Channel Bandwidth @ 8.5 MHz Offset.
Power Gain
Gps
25.5
28.5
30.5
dB
Power Added Efficiency
PAE
15
17
—
%
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
PAR
—
9
—
dB
ACPR
—
–50
–46
dBc
IRL
—
–15
–10
Adjacent Channel Power Ratio
Input Return Loss
dB
(continued)
MHT2000NR1 MHT2000GNR1
RF Device Data
Freescale Semiconductor, Inc.
19
APPENDIX A
MHT2000NR1 FUNCTIONAL TEST DATA, FIXTURE AND THERMAL DATA (continued)
Table A--1. Electrical Characteristics (TC = 25C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Gate Quiescent Voltage
(VDS = 28 Vdc, IDQ1 = 77 mA)
VGS(Q)
—
2.7
—
Vdc
Fixture Gate Quiescent Voltage
(VDD = 28 Vdc, IDQ1 = 77 mAdc, Measured in Functional Test)
VGG(Q)
12.5
15.8
19.5
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, IDQ2 = 275 mAdc)
VGS(Q)
—
2.7
—
Vdc
Fixture Gate Quiescent Voltage
(VDD = 28 Vdc, IDQ2 = 275 mAdc, Measured in Functional Test)
VGG(Q)
11
14
18
Vdc
Stage 1 -- On Characteristics
Stage 2 -- On Characteristics
Table A--2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
(Case Temperature 81C, Pout = 25 W CW)
Symbol
Stage 1, 28 Vdc, IDQ1 = 77 mA
Stage 2, 28 Vdc, IDQ2 = 275 mA
RJC
Value
5.5
1.3
Unit
C/W
MHT2000NR1 MHT2000GNR1
20
RF Device Data
Freescale Semiconductor, Inc.
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MHT2000NR1 MHT2000GNR1
Document
Number:
RF Device
DataMHT2000N
Rev.
0, 5/2014Semiconductor,
Freescale
Inc.
21