Document Number: MRF8S9202N Rev. 1, 2/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs MRF8S9202NR3 MRF8S9202GNR3 Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 1300 mA, Pout = 58 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) ηD (%) Output PAR (dB) ACPR (dBc) 920 MHz 19.0 36.3 6.3 --38.2 940 MHz 19.1 37.2 6.2 --38.0 960 MHz 18.9 37.3 6.1 --37.1 920--960 MHz, 58 W AVG., 28 V SINGLE W--CDMA LATERAL N--CHANNEL RF POWER MOSFETs • Capable of Handling 7:1 VSWR, @ 32 Vdc, 920 MHz, 290 Watts CW Output Power (3 dB Input Overdrive from Rated Pout). Designed for Enhanced Ruggedness. • Typical Pout @ 1 dB Compression Point ≃ 200 Watts CW Features • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Greater Negative Gate--Source Voltage Range for Improved Class C Operation • Designed for Digital Predistortion Error Correction Systems • Optimized for Doherty Applications • 225°C Capable Plastic Package • In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel. CASE 2021--03, STYLE 1 OM--780--2 PLASTIC MRF8S9202NR3 CASE 2267--01 OM--780--2 GULL PLASTIC MRF8S9202GNR3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +70 Vdc Gate--Source Voltage VGS --6.0, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg --65 to +150 °C TC 150 °C TJ 225 °C Symbol Value (2,3) Unit Case Operating Temperature Operating Junction Temperature (1,2) Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 58 W CW, 28 Vdc, IDQ = 1300 mA, 920 MHz Case Temperature 90°C, 200 W CW, 28 Vdc, IDQ = 1300 mA, 920 MHz RθJC 0.31 0.27 °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. © Freescale Semiconductor, Inc., 2010, 2012. All rights reserved. RF Device Data Freescale Semiconductor, Inc. MRF8S9202NR3 MRF8S9202GNR3 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2 Machine Model (per EIA/JESD22--A115) A Charge Device Model (per JESD22--C101) IV Table 4. Moisture Sensitivity Level Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating Package Peak Temperature Unit 3 260 °C Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 70 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 800 μAdc) VGS(th) 1.5 2.3 3.0 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1300 mAdc) VGS(Q) — 3.1 — Vdc Fixture Gate Quiescent Voltage (1) (VDD = 28 Vdc, ID = 1300 mAdc, Measured in Functional Test) VGG(Q) 4.6 6.2 7.6 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 3.3 Adc) VDS(on) 0.1 0.2 0.3 Vdc Characteristic Off Characteristics On Characteristics Functional Tests (2,3) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1300 mA, Pout = 58 W Avg., f = 920 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Power Gain Gps 18.0 19.0 21.0 dB Drain Efficiency ηD 34.5 36.3 — % PAR 6.0 6.3 — dB ACPR — --38.2 --35.0 dBc IRL — --13 --9 dB Output Peak--to--Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1300 mA, Pout = 58 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Frequency Gps (dB) ηD (%) Output PAR (dB) ACPR (dBc) IRL (dB) 920 MHz 19.0 36.3 6.3 --38.2 --13 940 MHz 19.1 37.2 6.2 --38.0 --15 960 MHz 18.9 37.3 6.1 --37.1 --15 1. VGG = 2 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit schematic. 2. Part internally matched both on input and output. 3. Measurement made with device in straight lead configuration before any lead forming operation is applied. (continued) MRF8S9202NR3 MRF8S9202GNR3 2 RF Device Data Freescale Semiconductor, Inc. Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1300 mA, 920--960 MHz Bandwidth Pout @ 1 dB Compression Point, CW P1dB — 200 — — 7.5 — W IMD Symmetry @ 180 W PEP, Pout where IMD Third Order Intermodulation 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) IMDsym VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) VBWres — 70 — MHz Gain Flatness in 40 MHz Bandwidth @ Pout = 58 W Avg. GF — 0.3 — dB Gain Variation over Temperature (--30°C to +85°C) ∆G — 0.02 — dB/°C ∆P1dB — 0.006 — dB/°C Output Power Variation over Temperature (--30°C to +85°C) MHz MRF8S9202NR3 MRF8S9202GNR3 RF Device Data Freescale Semiconductor, Inc. 3 C2 R1 C10 R2 C3 R3 C9 C4 C5 C17 C8 C15 C13 C16 C12 C14 C18 C6 C7 C11 C1 MRF8S9202N Rev. 0 Figure 1. MRF8S9202NR3(GNR3) Test Circuit Component Layout Table 6. MRF8S9202NR3(GNR3) Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2 220 μF, 63 V Electrolytic Capacitors 222212018221 Vishay BC C3, C4, C5, C6, C7 10 μF, 50 V Chip Capacitors C5750X5R1H106MT TDK C8 2.7 pF Chip Capacitor ATC100B2R7BT500XT ATC C9, C10, C11, C12 47 pF Chip Capacitors ATC100B470JT500XT ATC C13, C14 1.2 pF Chip Capacitors ATC100B1R2BT500XT ATC C15 2 pF Chip Capacitor ATC100B2R0BT500XT ATC C16 4.3 pF Chip Capacitor ATC100B4R3BT500XT ATC C17, C18 3.3 pF Chip Capacitors ATC100B3R3BT500XT ATC R1, R2 1 KΩ, 1/8 W Chip Resistors WCR08051KG Welwyn R3 10 Ω, 1/8 W Chip Resistor 232273461009L Phycomp PCB 0.020″, εr = 3.5 RO4350B Rogers MRF8S9202NR3 MRF8S9202GNR3 4 RF Device Data Freescale Semiconductor, Inc. 35 Gps, POWER GAIN (dB) 20 19.5 Gps 19 30 25 18 ACPR --36 --38 17.5 --40 18.5 IRL 17 16.5 16 820 Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 840 860 880 900 --42 PARC --44 920 940 --4 --46 980 960 --8 --12 --16 --20 --24 --0.6 --0.8 --1 --1.2 --1.4 PARC (dB) 40 hD IRL, INPUT RETURN LOSS (dB) 45 VDD = 28 Vdc, Pout = 58 W (Avg.), IDQ = 1300 mA Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth 20.5 ACPR (dBc) 21 ηD, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS --1.6 f, FREQUENCY (MHz) IMD, INTERMODULATION DISTORTION (dBc) Figure 2. Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 58 Watts Avg. --10 VDD = 28 Vdc, Pout = 180 W (PEP), IDQ = 1300 mA Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 940 MHz --20 --30 IM3--L IM5--U --40 IM7--L --50 IM3--U IM5--L IM7--U --60 1 10 100 TWO--TONE SPACING (MHz) 19.5 0 19 18.5 18 17.5 17 ACPR --1 --1 dB = 49 W --2 dB = 69 W --3 PARC VDD = 28 Vdc, IDQ = 1300 mA, f = 940 MHz Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF --4 --5 Gps --3 dB = 95 W 30 50 70 90 --20 60 --25 50 hD --2 70 110 40 30 --30 --35 ACPR (dBc) 1 ηD, DRAIN EFFICIENCY (%) 20 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) Gps, POWER GAIN (dB) Figure 3. Intermodulation Distortion Products versus Two--Tone Spacing --40 20 --45 10 --50 130 Pout, OUTPUT POWER (WATTS) Figure 4. Output Peak--to--Average Ratio Compression (PARC) versus Output Power MRF8S9202NR3 MRF8S9202GNR3 RF Device Data Freescale Semiconductor, Inc. 5 TYPICAL CHARACTERISTICS 18 17 920 MHz 50 --10 30 920 MHz 16 940 MHz 960 MHz 15 1 0 40 ACPR 960 MHz 940 MHz 60 10 100 20 10 0 200 --20 --30 --40 ACPR (dBc) VDD = 28 Vdc, IDQ = 1300 mA, Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth 20 Input Signal PAR = 7.5 dB @ 0.01% Gps Probability on CCDF 19 hD ηD, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 21 --50 --60 Pout, OUTPUT POWER (WATTS) AVG. Figure 5. Single--Carrier W--CDMA Power Gain, Drain Efficiency and ACPR versus Output Power 0 24 Gain --3 16 --6 12 --9 IRL 8 --12 VDD = 28 Vdc Pin = 0 dBm IDQ = 1300 mA 4 0 600 700 800 900 IRL (dB) GAIN (dB) 20 --15 1000 1100 1200 1300 --18 1400 f, FREQUENCY (MHz) Figure 6. Broadband Frequency Response W--CDMA TEST SIGNAL 100 10 0 --10 Input Signal --30 0.1 0.01 W--CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 0.001 0.0001 3.84 MHz Channel BW --20 1 (dB) PROBABILITY (%) 10 0 1 2 3 4 5 6 --40 --50 --60 +ACPR in 3.84 MHz Integrated BW --ACPR in 3.84 MHz Integrated BW --70 --80 7 8 9 PEAK--TO--AVERAGE (dB) Figure 7. CCDF W--CDMA IQ Magnitude Clipping, Single--Carrier Test Signal 10 --90 --100 --9 --7.2 --5.4 --3.6 --1.8 0 1.8 3.6 5.4 7.2 9 f, FREQUENCY (MHz) Figure 8. Single--Carrier W--CDMA Spectrum MRF8S9202NR3 MRF8S9202GNR3 6 RF Device Data Freescale Semiconductor, Inc. VDD = 28 Vdc, IDQ = 1300 mA, Pout = 58 W Avg. f MHz Zsource Ω Zload Ω 820 1.46 -- j3.27 2.14 -- j2.57 840 1.62 -- j3.12 2.08 -- j2.30 860 1.80 -- j3.01 2.05 -- j2.05 880 2.00 -- j2.95 2.05 -- j1.82 900 2.20 -- j2.95 2.06 -- j1.60 920 2.38 -- j3.00 2.09 -- j1.38 940 2.52 -- j3.12 2.14 -- j1.18 960 2.62 -- j3.29 2.21 -- j0.98 980 2.63 -- j3.49 2.30 -- j0.81 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 9. Series Equivalent Source and Load Impedance MRF8S9202NR3 MRF8S9202GNR3 RF Device Data Freescale Semiconductor, Inc. 7 ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS VDD = 28 Vdc, IDQ = 1150 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle 60.5 Pout, OUTPUT POWER (dBm) 59 Ideal 57.5 Actual 56 54.5 53 960 MHz 940 MHz 51.5 920 MHz 50 48.5 940 MHz 47 920 MHz 960 MHz 45.5 44 27 28.5 30 31.5 33 34.5 36 37.5 39 40.5 42 43.5 Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V P1dB P3dB f (MHz) Watts dBm Watts dBm 920 298 54.7 362 55.6 940 290 54.6 358 55.5 960 283 54.5 352 55.5 Test Impedances per Compression Level f (MHz) Zsource Ω Zload Ω 920 P1dB 1.66 -- j3.06 4.27 -- j0.73 940 P1dB 2.08 -- j3.44 4.57 + j0.04 960 P1dB 2.86 -- j3.13 4.40 + j0.94 Figure 10. Pulsed CW Output Power versus Input Power @ 28 V MRF8S9202NR3 MRF8S9202GNR3 8 RF Device Data Freescale Semiconductor, Inc. PACKAGE DIMENSIONS MRF8S9202NR3 MRF8S9202GNR3 RF Device Data Freescale Semiconductor, Inc. 9 MRF8S9202NR3 MRF8S9202GNR3 10 RF Device Data Freescale Semiconductor, Inc. MRF8S9202NR3 MRF8S9202GNR3 RF Device Data Freescale Semiconductor, Inc. 11 MRF8S9202NR3 MRF8S9202GNR3 12 RF Device Data Freescale Semiconductor, Inc. MRF8S9202NR3 MRF8S9202GNR3 RF Device Data Freescale Semiconductor, Inc. 13 MRF8S9202NR3 MRF8S9202GNR3 14 RF Device Data Freescale Semiconductor, Inc. PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents and software to aid your design process. Application Notes • AN1907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model • .s2p File For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 Dec. 2010 • Initial Release of Data Sheet 1 Feb. 2012 • Added part number MRF8S9202GNR3, p. 1 • Added 2267--01 (OM--780--2 Gull) package isometric, p. 1, and Mechanical Outline, p. 12--14 MRF8S9202NR3 MRF8S9202GNR3 RF Device Data Freescale Semiconductor, Inc. 15 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2010, 2012. All rights reserved. MRF8S9202NR3 MRF8S9202GNR3 Document Number: MRF8S9202N Rev. 1, 2/2012 16 RF Device Data Freescale Semiconductor, Inc.