Document Number: MRF8S9232N Rev. 0, 10/2011 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET MRF8S9232NR3 Designed for CDMA base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 63 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) ηD (%) Output PAR (dB) ACPR (dBc) 920 MHz 18.4 36.5 6.1 --37.8 940 MHz 18.3 36.2 6.1 --37.9 960 MHz 18.1 36.3 6.1 --37.8 865--960 MHz, 63 W AVG., 28 V SINGLE W--CDMA LATERAL N--CHANNEL RF POWER MOSFET • Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 330 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness • Typical Pout @ 1 dB Compression Point ≃ 230 Watts CW 880 MHz • Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 63 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) ηD (%) Output PAR (dB) ACPR (dBc) 865 MHz 18.9 36.1 6.2 --38.7 880 MHz 18.9 36.3 6.2 --38.6 895 MHz 18.7 36.2 6.1 --38.8 CASE 2021--03, STYLE 1 OM--780--2 PLASTIC Features • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Greater Negative Gate--Source Voltage Range for Improved Class C Operation • 225°C Capable Plastic Package • Designed for Digital Predistortion Error Correction Systems • Optimized for Doherty Applications • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel. Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +70 Vdc Gate--Source Voltage VGS --6.0, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg --65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature (1,2) TJ 225 °C 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. © Freescale Semiconductor, Inc., 2011. All rights reserved. RF Device Data Freescale Semiconductor, Inc. MRF8S9232NR3 1 Table 2. Thermal Characteristics Characteristic Value (1,2) Symbol Thermal Resistance, Junction to Case Case Temperature 76°C, 63 W CW, 28 Vdc, IDQ = 1400 mA, 960 MHz Case Temperature 82°C, 230 W CW, 28 Vdc, IDQ = 1400 mA, 960 MHz Unit °C/W RθJC 0.27 0.25 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2 Machine Model (per EIA/JESD22--A115) B Charge Device Model (per JESD22--C101) IV Table 4. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit 3 260 °C Per JESD22--A113, IPC/JEDEC J--STD--020 Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 70 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 920 μAdc) VGS(th) 1.5 2.3 3.0 Vdc Gate Quiescent Voltage (VDD = 28 Vdc, ID = 1400 mAdc, Measured in Functional Test) VGS(Q) 2.2 3 3.7 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 3.4 Adc) VDS(on) 0.1 0.2 0.3 Vdc Characteristic Off Characteristics On Characteristics Functional Tests (3) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, Pout = 63 W Avg., f = 960 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Power Gain Gps 17.0 18.1 20.0 dB Drain Efficiency ηD 33.0 36.3 — % PAR 5.8 6.1 — dB ACPR — --37.8 --35.5 dBc IRL — --23 --9 dB Output Peak--to--Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, Pout = 63 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Frequency Gps (dB) ηD (%) Output PAR (dB) ACPR (dBc) IRL (dB) 920 MHz 18.4 36.5 6.1 --37.8 --13 940 MHz 18.3 36.2 6.1 --37.9 --19 960 MHz 18.1 36.3 6.1 --37.8 --23 1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. 3. Part internally matched both on input and output. (continued) MRF8S9232NR3 2 RF Device Data Freescale Semiconductor, Inc. Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, 920--960 MHz Bandwidth Pout @ 1 dB Compression Point, CW P1dB — 230 — — 20 — W IMD Symmetry @ 230 W PEP, Pout where IMD Third Order Intermodulation 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) IMDsym VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) VBWres — 65 — MHz Gain Flatness in 40 MHz Bandwidth @ Pout = 63 W Avg. GF — 0.3 — dB Gain Variation over Temperature (--30°C to +85°C) ∆G — 0.019 — dB/°C ∆P1dB — 0.023 — dB/°C Output Power Variation over Temperature (--30°C to +85°C) MHz Typical Broadband Performance — 880 MHz (In Freescale 880 MHz Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, Pout = 63 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Frequency Gps (dB) ηD (%) Output PAR (dB) ACPR (dBc) IRL (dB) 865 MHz 18.9 36.1 6.2 --38.7 --14 880 MHz 18.9 36.3 6.2 --38.6 --15 895 MHz 18.7 36.2 6.1 --38.8 --14 MRF8S9232NR3 RF Device Data Freescale Semiconductor, Inc. 3 C22 VGG VDD C29 B1 C25 C2 C5 C9 C10 C11 C6 R1 C18 C19 C1* C23* C3 C4 C7 C24 C26 R2 C8 CUT OUT AREA C12 C13 C20 C14 C27 C28 C21 C15 C16 C30 C17 MRF8S9232N Rev. 1 *C1 and C23 are mounted vertically. Figure 1. MRF8S9232NR3 Test Circuit Component Layout Table 6. MRF8S9232NR3 Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1 Short Ferrite Bead MPZ2012S300AT000 TDK C1, C19 4.7 pF Chip Capacitors ATC100B4R7CT500XT ATC C2, C10, C11, C15, C16, C26 10 μF, 50 V Chip Capacitors C5750X7R1H106K TDK C3 1.2 pF Chip Capacitor ATC100B1R2CT500XT ATC C4, C7 2.0 pF Chip Capacitors ATC100B2R0BT500XT ATC C5, C9, C14, C23, C28 39 pF Chip Capacitors ATC100B390JT500XT ATC C6, C8 3.3 pF Chip Capacitors ATC100B3R3BT500XT ATC C12, C13 5.1 pF Chip Capacitors ATC100B5R1BT500XT ATC C17, C22 470 μF, 63 V Electrolytic Capacitors MCGPR63V477M13X26--RH Multicomp C18 0.8 pF Chip Capacitor ATC100B0R8BT500XT ATC C20 1.7 pF Chip Capacitor ATC100B1R7BT500XT ATC C21 1.5 pF Chip Capacitor ATC100B1R5BT500XT ATC C24 62 pF Chip Capacitor ATC100B620JT500XT ATC C25, C27 330 nF 100 V Chip Capacitors C1210C334K1RAC Kemet C29, C30 220 nF 50 V Chip Capacitors GRM32DR72E224KW01L TDK R1, R2 2 Ω, 1/4 W Chip Resistors CRCW12062R0FNEA Vishay PCB 0.020″, εr = 3.5 RO4350B Rogers MRF8S9232NR3 4 RF Device Data Freescale Semiconductor, Inc. 34.5 Gps 17.6 17.2 IRL 17 33.5 Single--Carrier W--CDMA 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 17.4 16.6 840 --34 --8 --38 --40 ACPR 16.4 820 --4 --36 PARC 16.8 --32 860 880 900 920 940 960 980 --42 --12 --16 --20 --24 --1 --1.2 --1.4 --1.6 PARC (dB) ηD 17.8 IRL, INPUT RETURN LOSS (dB) 36.5 35.5 18 Gps, POWER GAIN (dB) 37.5 VDD = 28 Vdc, Pout = 63 W (Avg.), IDQ = 1400 mA 18.2 ACPR (dBc) 18.4 ηD, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS --1.8 --2 f, FREQUENCY (MHz) IMD, INTERMODULATION DISTORTION (dBc) Figure 2. Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 63 Watts Avg. --10 VDD = 28 Vdc, Pout = 230 W (PEP), IDQ = 1400 mA Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 940 MHz IM3--U --20 IM3--L --30 IM5--U --40 IM5--L IM7--L --50 IM7--U --60 1 100 10 TWO--TONE SPACING (MHz) 18.5 0 18 17.5 17 16.5 16 VDD = 28 Vdc, IDQ = 1400 mA, f = 940 MHz Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF --1 --20 50 --25 40 Gps --1 dB = 54 W --2 --2 dB = 76 W --4 20 --3 dB = 104 W ACPR 30 30 PARC ηD --3 --5 60 50 70 90 110 10 0 130 --30 --35 ACPR (dBc) 1 ηD, DRAIN EFFICIENCY (%) 19 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) Gps, POWER GAIN (dB) Figure 3. Intermodulation Distortion Products versus Two--Tone Spacing --40 --45 --50 Pout, OUTPUT POWER (WATTS) Figure 4. Output Peak--to--Average Ratio Compression (PARC) versus Output Power MRF8S9232NR3 RF Device Data Freescale Semiconductor, Inc. 5 TYPICAL CHARACTERISTICS Gps, POWER GAIN (dB) 960 MHz Gps 18 920 MHz VDD = 28 Vdc, IDQ = 1400 mA Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 17 16 1 --10 40 20 10 960 MHz 920 MHz 50 ACPR 30 15 14 ηD 940 MHz 920 MHz 0 940 MHz 10 0 300 100 --20 --30 --40 ACPR (dBc) 940 MHz 19 960 MHz 60 ηD, DRAIN EFFICIENCY (%) 20 --50 --60 Pout, OUTPUT POWER (WATTS) AVG. Figure 5. Single--Carrier W--CDMA Power Gain, Drain Efficiency and ACPR versus Output Power 30 24 20 Gain 16 10 12 0 IRL 8 --10 VDD = 28 Vdc Pin = 0 dBm IDQ = 1400 mA 4 0 600 700 800 900 IRL (dB) GAIN (dB) 20 --20 1000 1200 1100 1300 --30 1400 f, FREQUENCY (MHz) Figure 6. Broadband Frequency Response W--CDMA TEST SIGNAL 100 10 0 --10 Input Signal --30 0.1 0.01 W--CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 0.001 0.0001 3.84 MHz Channel BW --20 1 (dB) PROBABILITY (%) 10 0 1 2 3 4 5 6 --40 --50 --60 +ACPR in 3.84 MHz Integrated BW --ACPR in 3.84 MHz Integrated BW --70 --80 7 8 9 PEAK--TO--AVERAGE (dB) Figure 7. CCDF W--CDMA IQ Magnitude Clipping, Single--Carrier Test Signal 10 --90 --100 --9 --7.2 --5.4 --3.6 --1.8 0 1.8 3.6 5.4 7.2 9 f, FREQUENCY (MHz) Figure 8. Single--Carrier W--CDMA Spectrum MRF8S9232NR3 6 RF Device Data Freescale Semiconductor, Inc. VDD = 28 Vdc, IDQ = 1400 mA, Pout = 63 W Avg. f MHz Zsource Ω Zload Ω 820 4.01 -- j3.00 2.97 -- j0.68 840 3.91 -- j3.08 2.95 -- j0.68 860 3.78 -- j3.14 2.83 -- j0.65 880 3.75 -- j3.20 2.75 -- j0.55 900 3.76 -- j3.37 2.75 -- j0.46 920 3.63 -- j3.62 2.74 -- j0.44 940 3.31 -- j3.71 2.67 -- j0.39 960 3.00 -- j3.61 2.60 -- j0.25 980 2.91 -- j3.58 2.58 -- j0.21 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 9. Series Equivalent Source and Load Impedance MRF8S9232NR3 RF Device Data Freescale Semiconductor, Inc. 7 VDD = 28 Vdc, IDQ = 1150 mA, Pout = 63 W Avg., Pulsed CW, 10 μsec(on), 10% Duty Cycle Max Output Power P1dB P3dB f (MHz) Zsource (Ω) Zload (1) (Ω) (dBm) (W) ηD (%) (dBm) (W) ηD (%) 920 2.13 -- j3.67 6.00 + j0.73 55.2 331 54.2 56.0 401 58.6 940 2.74 -- j3.80 7.28 + j3.55 55.3 335 46.6 55.9 387 50.3 960 3.66 -- j3.76 6.49 + j3.72 55.6 366 49.9 55.8 380 51.8 (1) Load impedance for optimum P1dB power. Zsource = Impedance as measured from gate contact to ground. Zload = Impedance as measured from drain contact to ground. Input Load Pull Tuner Output Load Pull Tuner Device Under Test Zsource Zload Figure 10. Load Pull Performance — Maximum P1dB Tuning VDD = 28 Vdc, IDQ = 1150 mA, Pout = 63 W Avg., Pulsed CW, 10 μsec(on), 10% Duty Cycle Max Drain Efficiency f (MHz) Zsource (Ω) 920 2.13 -- j3.67 940 2.74 -- j3.80 960 3.66 -- j3.76 Zload (Ω) P1dB (1) P3dB (dBm) (W) ηD (%) (dBm) (W) ηD (%) 1.66 -- j1.20 52.2 167 70.1 53.0 197 73.0 1.95 -- j1.22 52.3 170 69.6 53.2 209 72.3 2.16 -- j1.24 52.2 164 69.5 52.9 193 72.0 (1) Load impedance for optimum P1dB efficiency. Zsource = Impedance as measured from gate contact to ground. Zload = Impedance as measured from drain contact to ground. Input Load Pull Tuner Output Load Pull Tuner Device Under Test Zsource Zload Figure 11. Load Pull Performance — Maximum Efficiency Tuning MRF8S9232NR3 8 RF Device Data Freescale Semiconductor, Inc. C22 VGG VDD C29 B1 C25 C5 C2 C9 C10 C11 C6 R1 C1* C3 C19 C4 C7 C24 R2 C8 C26 CUT OUT AREA C12 C13 C23* C20 C14 C27 C28 C21 C15 C16 C18 C17 MRF8S9232N Rev. 1 *C1 and C23 are mounted vertically. Figure 12. MRF8S9232NR3 Test Circuit Component Layout — 865--895 MHz Table 7. MRF8S9232NR3 Test Circuit Component Designations and Values — 865--895 MHz Part Description Part Number Manufacturer B1 Short Ferrite Bead MPZ2012S300AT000 TDK C1, C19 4.7 pF Chip Capacitors ATC100B4R7CT500XT ATC C2, C10, C11, C15, C16, C26 10 μF, 50 V Chip Capacitors C5750X7R1H106K TDK C3 2.0 pF Chip Capacitor ATC100B2R0BT500XT ATC C4 1.8 pF Chip Capacitor ATC100B1R8CT500XT ATC C5, C9, C14, C23, C28 39 pF Chip Capacitors ATC100B390JT500XT ATC C6, C8 3.3 pF Chip Capacitors ATC100B3R3BT500XT ATC C7 3.9 pF Chip Capacitor ATC100B3R9BT500XT ATC C12, C13 5.1 pF Chip Capacitors ATC100B5R1BT500XT ATC C17, C22 470 μF, 63 V Electrolytic Capacitors MCGPR63V477M13X26--RH Multicomp C18, C29 220 nF 50 V Chip Capacitors GRM32DR72E224KW01L TDK C20 1.7 pF Chip Capacitor ATC100B1R7BT500XT ATC C21 1.5 pF Chip Capacitor ATC100B1R5BT500XT ATC C24 62 pF Chip Capacitor ATC100B620JT500XT ATC C25, C27 330 nF 100 V Chip Capacitors C1210C334K1RAC Kemet R1, R2 2 Ω, 1/4 W Chip Resistors CRCW12062R0FNEA Vishay PCB 0.020″, εr = 3.5 RO4350B Rogers MRF8S9232NR3 RF Device Data Freescale Semiconductor, Inc. 9 17.5 16 820 33.5 --35 --3 --36 --6 --38 ACPR 16.5 35.5 34.5 --37 PARC 17 36.5 --39 IRL 840 860 --9 --12 --15 --40 880 900 920 940 960 --18 980 --0.8 --1 --1.2 --1.4 PARC (dB) 18 37.5 IRL, INPUT RETURN LOSS (dB) VDD = 28 Vdc, Pout = 63 W (Avg.), IDQ = 1400 mA 20.5 Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth 20 ηD 19.5 3.84 MHz Channel Bandwidth Gps Input Signal PAR = 7.5 dB @ 19 0.01% Probability on CCDF 18.5 ACPR (dBc) Gps, POWER GAIN (dB) 21 ηD, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS — 865--895 MHz --1.6 --1.8 f, FREQUENCY (MHz) Figure 13. Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 63 Watts Avg. VDD = 28 Vdc, IDQ = 1400 mA, Single--Carrier W--CDMA 3.84 MHz Channel Bandwidth Gps 18 865 MHz 880 MHz 895 MHz 865 MHz 20 15 14 Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 1 --10 30 895 MHz 16 50 ACPR 40 880 MHz 17 0 0 300 100 10 10 --20 --30 --40 ACPR (dBc) Gps, POWER GAIN (dB) 19 60 ηD ηD, DRAIN EFFICIENCY (%) 20 --50 --60 Pout, OUTPUT POWER (WATTS) AVG. Figure 14. Single--Carrier W--CDMA Power Gain, Drain Efficiency and ACPR versus Output Power 30 24 20 20 16 10 12 0 IRL 8 0 600 --10 VDD = 28 Vdc Pin = 0 dBm IDQ = 1400 mA 4 700 800 900 IRL (dB) GAIN (dB) Gain 1000 1100 1200 --20 1300 --30 1400 f, FREQUENCY (MHz) Figure 15. Broadband Frequency Response MRF8S9232NR3 10 RF Device Data Freescale Semiconductor, Inc. VDD = 28 Vdc, IDQ = 1400 mA, Pout = 63 W Avg. f MHz Zsource Ω Zload Ω 820 5.14 -- j2.18 2.24 -- j0.69 840 5.27 -- j2.61 2.17 -- j0.69 860 5.17 -- j3.00 2.04 -- j0.64 880 5.03 -- j3.33 1.95 -- j0.53 900 4.93 -- j3.70 1.90 -- j0.42 920 4.64 -- j4.10 1.85 -- j0.36 940 4.10 -- j4.28 1.75 -- j0.25 960 3.62 -- j4.18 1.62 -- j0.11 980 3.51 -- j4.10 1.60 -- j0.04 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 16. Series Equivalent Source and Load Impedance — 865--895 MHz MRF8S9232NR3 RF Device Data Freescale Semiconductor, Inc. 11 PACKAGE DIMENSIONS MRF8S9232NR3 12 RF Device Data Freescale Semiconductor, Inc. MRF8S9232NR3 RF Device Data Freescale Semiconductor, Inc. 13 MRF8S9232NR3 14 RF Device Data Freescale Semiconductor, Inc. PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following documents and software to aid your design process. Application Notes • AN1907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model • .s2p File For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 Oct. 2011 Description • Initial Release of Data Sheet MRF8S9232NR3 RF Device Data Freescale Semiconductor, Inc. 15 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1--8--1, Shimo--Meguro, Meguro--ku, Tokyo 153--0064 Japan 0120 191014 or +81 3 5437 9125 [email protected] Asia/Pacific: Freescale Semiconductor China Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2011. All rights reserved. MRF8S9232NR3 Document Number: MRF8S9232N Rev. 0, 10/2011 16 RF Device Data Freescale Semiconductor, Inc.