Data Sheet

Document Number: MRF8S9232N
Rev. 0, 10/2011
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
MRF8S9232NR3
Designed for CDMA base station applications with frequencies from 865 to
960 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulation formats.
• Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ =
1400 mA, Pout = 63 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
920 MHz
18.4
36.5
6.1
--37.8
940 MHz
18.3
36.2
6.1
--37.9
960 MHz
18.1
36.3
6.1
--37.8
865--960 MHz, 63 W AVG., 28 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFET
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 330 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout), Designed for
Enhanced Ruggedness
• Typical Pout @ 1 dB Compression Point ≃ 230 Watts CW
880 MHz
• Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ =
1400 mA, Pout = 63 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
865 MHz
18.9
36.1
6.2
--38.7
880 MHz
18.9
36.3
6.2
--38.6
895 MHz
18.7
36.2
6.1
--38.8
CASE 2021--03, STYLE 1
OM--780--2
PLASTIC
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C Operation
• 225°C Capable Plastic Package
• Designed for Digital Predistortion Error Correction Systems
• Optimized for Doherty Applications
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +70
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
--65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
© Freescale Semiconductor, Inc., 2011. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MRF8S9232NR3
1
Table 2. Thermal Characteristics
Characteristic
Value (1,2)
Symbol
Thermal Resistance, Junction to Case
Case Temperature 76°C, 63 W CW, 28 Vdc, IDQ = 1400 mA, 960 MHz
Case Temperature 82°C, 230 W CW, 28 Vdc, IDQ = 1400 mA, 960 MHz
Unit
°C/W
RθJC
0.27
0.25
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2
Machine Model (per EIA/JESD22--A115)
B
Charge Device Model (per JESD22--C101)
IV
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
3
260
°C
Per JESD22--A113, IPC/JEDEC J--STD--020
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 70 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 920 μAdc)
VGS(th)
1.5
2.3
3.0
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 1400 mAdc, Measured in Functional Test)
VGS(Q)
2.2
3
3.7
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 3.4 Adc)
VDS(on)
0.1
0.2
0.3
Vdc
Characteristic
Off Characteristics
On Characteristics
Functional Tests (3) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, Pout = 63 W Avg., f = 960 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Power Gain
Gps
17.0
18.1
20.0
dB
Drain Efficiency
ηD
33.0
36.3
—
%
PAR
5.8
6.1
—
dB
ACPR
—
--37.8
--35.5
dBc
IRL
—
--23
--9
dB
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, Pout = 63 W Avg.,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
920 MHz
18.4
36.5
6.1
--37.8
--13
940 MHz
18.3
36.2
6.1
--37.9
--19
960 MHz
18.1
36.3
6.1
--37.8
--23
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
3. Part internally matched both on input and output.
(continued)
MRF8S9232NR3
2
RF Device Data
Freescale Semiconductor, Inc.
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, 920--960 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
—
230
—
—
20
—
W
IMD Symmetry @ 230 W PEP, Pout where IMD Third Order
Intermodulation  30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
—
65
—
MHz
Gain Flatness in 40 MHz Bandwidth @ Pout = 63 W Avg.
GF
—
0.3
—
dB
Gain Variation over Temperature
(--30°C to +85°C)
∆G
—
0.019
—
dB/°C
∆P1dB
—
0.023
—
dB/°C
Output Power Variation over Temperature
(--30°C to +85°C)
MHz
Typical Broadband Performance — 880 MHz (In Freescale 880 MHz Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA,
Pout = 63 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR
measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
865 MHz
18.9
36.1
6.2
--38.7
--14
880 MHz
18.9
36.3
6.2
--38.6
--15
895 MHz
18.7
36.2
6.1
--38.8
--14
MRF8S9232NR3
RF Device Data
Freescale Semiconductor, Inc.
3
C22
VGG
VDD
C29
B1
C25
C2
C5
C9
C10 C11
C6
R1
C18 C19
C1*
C23*
C3 C4
C7
C24
C26
R2
C8
CUT OUT AREA
C12
C13
C20
C14
C27 C28
C21
C15 C16
C30
C17
MRF8S9232N
Rev. 1
*C1 and C23 are mounted vertically.
Figure 1. MRF8S9232NR3 Test Circuit Component Layout
Table 6. MRF8S9232NR3 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1
Short Ferrite Bead
MPZ2012S300AT000
TDK
C1, C19
4.7 pF Chip Capacitors
ATC100B4R7CT500XT
ATC
C2, C10, C11, C15, C16, C26
10 μF, 50 V Chip Capacitors
C5750X7R1H106K
TDK
C3
1.2 pF Chip Capacitor
ATC100B1R2CT500XT
ATC
C4, C7
2.0 pF Chip Capacitors
ATC100B2R0BT500XT
ATC
C5, C9, C14, C23, C28
39 pF Chip Capacitors
ATC100B390JT500XT
ATC
C6, C8
3.3 pF Chip Capacitors
ATC100B3R3BT500XT
ATC
C12, C13
5.1 pF Chip Capacitors
ATC100B5R1BT500XT
ATC
C17, C22
470 μF, 63 V Electrolytic Capacitors
MCGPR63V477M13X26--RH
Multicomp
C18
0.8 pF Chip Capacitor
ATC100B0R8BT500XT
ATC
C20
1.7 pF Chip Capacitor
ATC100B1R7BT500XT
ATC
C21
1.5 pF Chip Capacitor
ATC100B1R5BT500XT
ATC
C24
62 pF Chip Capacitor
ATC100B620JT500XT
ATC
C25, C27
330 nF 100 V Chip Capacitors
C1210C334K1RAC
Kemet
C29, C30
220 nF 50 V Chip Capacitors
GRM32DR72E224KW01L
TDK
R1, R2
2 Ω, 1/4 W Chip Resistors
CRCW12062R0FNEA
Vishay
PCB
0.020″, εr = 3.5
RO4350B
Rogers
MRF8S9232NR3
4
RF Device Data
Freescale Semiconductor, Inc.
34.5
Gps
17.6
17.2
IRL
17
33.5
Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @
0.01% Probability on CCDF
17.4
16.6
840
--34
--8
--38
--40
ACPR
16.4
820
--4
--36
PARC
16.8
--32
860
880
900
920
940
960
980
--42
--12
--16
--20
--24
--1
--1.2
--1.4
--1.6
PARC (dB)
ηD
17.8
IRL, INPUT RETURN LOSS (dB)
36.5
35.5
18
Gps, POWER GAIN (dB)
37.5
VDD = 28 Vdc, Pout = 63 W (Avg.), IDQ = 1400 mA
18.2
ACPR (dBc)
18.4
ηD, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
--1.8
--2
f, FREQUENCY (MHz)
IMD, INTERMODULATION DISTORTION (dBc)
Figure 2. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 63 Watts Avg.
--10
VDD = 28 Vdc, Pout = 230 W (PEP), IDQ = 1400 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 940 MHz
IM3--U
--20
IM3--L
--30
IM5--U
--40
IM5--L
IM7--L
--50
IM7--U
--60
1
100
10
TWO--TONE SPACING (MHz)
18.5
0
18
17.5
17
16.5
16
VDD = 28 Vdc, IDQ = 1400 mA, f = 940 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
--1
--20
50
--25
40
Gps
--1 dB = 54 W
--2
--2 dB = 76 W
--4
20
--3 dB = 104 W
ACPR
30
30
PARC
ηD
--3
--5
60
50
70
90
110
10
0
130
--30
--35
ACPR (dBc)
1
ηD, DRAIN EFFICIENCY (%)
19
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
Gps, POWER GAIN (dB)
Figure 3. Intermodulation Distortion Products
versus Two--Tone Spacing
--40
--45
--50
Pout, OUTPUT POWER (WATTS)
Figure 4. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
MRF8S9232NR3
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS
Gps, POWER GAIN (dB)
960 MHz
Gps
18
920 MHz
VDD = 28 Vdc, IDQ = 1400 mA
Single--Carrier W--CDMA, 3.84 MHz
Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01%
Probability on CCDF
17
16
1
--10
40
20
10
960 MHz
920 MHz
50
ACPR 30
15
14
ηD
940 MHz
920 MHz
0
940 MHz
10
0
300
100
--20
--30
--40
ACPR (dBc)
940 MHz
19
960 MHz
60
ηD, DRAIN EFFICIENCY (%)
20
--50
--60
Pout, OUTPUT POWER (WATTS) AVG.
Figure 5. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
30
24
20
Gain
16
10
12
0
IRL
8
--10
VDD = 28 Vdc
Pin = 0 dBm
IDQ = 1400 mA
4
0
600
700
800
900
IRL (dB)
GAIN (dB)
20
--20
1000
1200
1100
1300
--30
1400
f, FREQUENCY (MHz)
Figure 6. Broadband Frequency Response
W--CDMA TEST SIGNAL
100
10
0
--10
Input Signal
--30
0.1
0.01
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
0.001
0.0001
3.84 MHz
Channel BW
--20
1
(dB)
PROBABILITY (%)
10
0
1
2
3
4
5
6
--40
--50
--60
+ACPR in 3.84 MHz
Integrated BW
--ACPR in 3.84 MHz
Integrated BW
--70
--80
7
8
9
PEAK--TO--AVERAGE (dB)
Figure 7. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
10
--90
--100
--9
--7.2 --5.4
--3.6 --1.8
0
1.8
3.6
5.4
7.2
9
f, FREQUENCY (MHz)
Figure 8. Single--Carrier W--CDMA Spectrum
MRF8S9232NR3
6
RF Device Data
Freescale Semiconductor, Inc.
VDD = 28 Vdc, IDQ = 1400 mA, Pout = 63 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
820
4.01 -- j3.00
2.97 -- j0.68
840
3.91 -- j3.08
2.95 -- j0.68
860
3.78 -- j3.14
2.83 -- j0.65
880
3.75 -- j3.20
2.75 -- j0.55
900
3.76 -- j3.37
2.75 -- j0.46
920
3.63 -- j3.62
2.74 -- j0.44
940
3.31 -- j3.71
2.67 -- j0.39
960
3.00 -- j3.61
2.60 -- j0.25
980
2.91 -- j3.58
2.58 -- j0.21
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 9. Series Equivalent Source and Load Impedance
MRF8S9232NR3
RF Device Data
Freescale Semiconductor, Inc.
7
VDD = 28 Vdc, IDQ = 1150 mA, Pout = 63 W Avg., Pulsed CW, 10 μsec(on), 10% Duty Cycle
Max Output Power
P1dB
P3dB
f
(MHz)
Zsource
(Ω)
Zload (1)
(Ω)
(dBm)
(W)
ηD (%)
(dBm)
(W)
ηD (%)
920
2.13 -- j3.67
6.00 + j0.73
55.2
331
54.2
56.0
401
58.6
940
2.74 -- j3.80
7.28 + j3.55
55.3
335
46.6
55.9
387
50.3
960
3.66 -- j3.76
6.49 + j3.72
55.6
366
49.9
55.8
380
51.8
(1) Load impedance for optimum P1dB power.
Zsource = Impedance as measured from gate contact to ground.
Zload = Impedance as measured from drain contact to ground.
Input
Load Pull
Tuner
Output
Load Pull
Tuner
Device
Under
Test
Zsource
Zload
Figure 10. Load Pull Performance — Maximum P1dB Tuning
VDD = 28 Vdc, IDQ = 1150 mA, Pout = 63 W Avg., Pulsed CW, 10 μsec(on), 10% Duty Cycle
Max Drain Efficiency
f
(MHz)
Zsource
(Ω)
920
2.13 -- j3.67
940
2.74 -- j3.80
960
3.66 -- j3.76
Zload
(Ω)
P1dB
(1)
P3dB
(dBm)
(W)
ηD (%)
(dBm)
(W)
ηD (%)
1.66 -- j1.20
52.2
167
70.1
53.0
197
73.0
1.95 -- j1.22
52.3
170
69.6
53.2
209
72.3
2.16 -- j1.24
52.2
164
69.5
52.9
193
72.0
(1) Load impedance for optimum P1dB efficiency.
Zsource = Impedance as measured from gate contact to ground.
Zload = Impedance as measured from drain contact to ground.
Input
Load Pull
Tuner
Output
Load Pull
Tuner
Device
Under
Test
Zsource
Zload
Figure 11. Load Pull Performance — Maximum Efficiency Tuning
MRF8S9232NR3
8
RF Device Data
Freescale Semiconductor, Inc.
C22
VGG
VDD
C29
B1
C25 C5
C2
C9
C10 C11
C6
R1
C1*
C3
C19
C4
C7
C24
R2
C8
C26
CUT OUT AREA
C12
C13
C23*
C20
C14
C27 C28
C21
C15 C16
C18
C17
MRF8S9232N
Rev. 1
*C1 and C23 are mounted vertically.
Figure 12. MRF8S9232NR3 Test Circuit Component Layout — 865--895 MHz
Table 7. MRF8S9232NR3 Test Circuit Component Designations and Values — 865--895 MHz
Part
Description
Part Number
Manufacturer
B1
Short Ferrite Bead
MPZ2012S300AT000
TDK
C1, C19
4.7 pF Chip Capacitors
ATC100B4R7CT500XT
ATC
C2, C10, C11, C15, C16, C26
10 μF, 50 V Chip Capacitors
C5750X7R1H106K
TDK
C3
2.0 pF Chip Capacitor
ATC100B2R0BT500XT
ATC
C4
1.8 pF Chip Capacitor
ATC100B1R8CT500XT
ATC
C5, C9, C14, C23, C28
39 pF Chip Capacitors
ATC100B390JT500XT
ATC
C6, C8
3.3 pF Chip Capacitors
ATC100B3R3BT500XT
ATC
C7
3.9 pF Chip Capacitor
ATC100B3R9BT500XT
ATC
C12, C13
5.1 pF Chip Capacitors
ATC100B5R1BT500XT
ATC
C17, C22
470 μF, 63 V Electrolytic Capacitors
MCGPR63V477M13X26--RH
Multicomp
C18, C29
220 nF 50 V Chip Capacitors
GRM32DR72E224KW01L
TDK
C20
1.7 pF Chip Capacitor
ATC100B1R7BT500XT
ATC
C21
1.5 pF Chip Capacitor
ATC100B1R5BT500XT
ATC
C24
62 pF Chip Capacitor
ATC100B620JT500XT
ATC
C25, C27
330 nF 100 V Chip Capacitors
C1210C334K1RAC
Kemet
R1, R2
2 Ω, 1/4 W Chip Resistors
CRCW12062R0FNEA
Vishay
PCB
0.020″, εr = 3.5
RO4350B
Rogers
MRF8S9232NR3
RF Device Data
Freescale Semiconductor, Inc.
9
17.5
16
820
33.5
--35
--3
--36
--6
--38
ACPR
16.5
35.5
34.5
--37
PARC
17
36.5
--39
IRL
840
860
--9
--12
--15
--40
880
900
920
940
960
--18
980
--0.8
--1
--1.2
--1.4
PARC (dB)
18
37.5
IRL, INPUT RETURN LOSS (dB)
VDD = 28 Vdc, Pout = 63 W (Avg.), IDQ = 1400 mA
20.5 Single--Carrier
W--CDMA, 3.84 MHz Channel Bandwidth
20
ηD
19.5
3.84 MHz Channel Bandwidth
Gps
Input Signal PAR = 7.5 dB @
19
0.01% Probability on CCDF
18.5
ACPR (dBc)
Gps, POWER GAIN (dB)
21
ηD, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS — 865--895 MHz
--1.6
--1.8
f, FREQUENCY (MHz)
Figure 13. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 63 Watts Avg.
VDD = 28 Vdc, IDQ = 1400 mA, Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
Gps
18
865 MHz
880 MHz
895 MHz
865 MHz
20
15
14
Input Signal PAR = 7.5 dB
@ 0.01% Probability on CCDF
1
--10
30
895 MHz
16
50
ACPR 40
880 MHz
17
0
0
300
100
10
10
--20
--30
--40
ACPR (dBc)
Gps, POWER GAIN (dB)
19
60
ηD
ηD, DRAIN EFFICIENCY (%)
20
--50
--60
Pout, OUTPUT POWER (WATTS) AVG.
Figure 14. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
30
24
20
20
16
10
12
0
IRL
8
0
600
--10
VDD = 28 Vdc
Pin = 0 dBm
IDQ = 1400 mA
4
700
800
900
IRL (dB)
GAIN (dB)
Gain
1000
1100
1200
--20
1300
--30
1400
f, FREQUENCY (MHz)
Figure 15. Broadband Frequency Response
MRF8S9232NR3
10
RF Device Data
Freescale Semiconductor, Inc.
VDD = 28 Vdc, IDQ = 1400 mA, Pout = 63 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
820
5.14 -- j2.18
2.24 -- j0.69
840
5.27 -- j2.61
2.17 -- j0.69
860
5.17 -- j3.00
2.04 -- j0.64
880
5.03 -- j3.33
1.95 -- j0.53
900
4.93 -- j3.70
1.90 -- j0.42
920
4.64 -- j4.10
1.85 -- j0.36
940
4.10 -- j4.28
1.75 -- j0.25
960
3.62 -- j4.18
1.62 -- j0.11
980
3.51 -- j4.10
1.60 -- j0.04
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 16. Series Equivalent Source and Load Impedance — 865--895 MHz
MRF8S9232NR3
RF Device Data
Freescale Semiconductor, Inc.
11
PACKAGE DIMENSIONS
MRF8S9232NR3
12
RF Device Data
Freescale Semiconductor, Inc.
MRF8S9232NR3
RF Device Data
Freescale Semiconductor, Inc.
13
MRF8S9232NR3
14
RF Device Data
Freescale Semiconductor, Inc.
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following documents and software to aid your design process.
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
• .s2p File
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
Oct. 2011
Description
• Initial Release of Data Sheet
MRF8S9232NR3
RF Device Data
Freescale Semiconductor, Inc.
15
How to Reach Us:
Home Page:
www.freescale.com
Web Support:
http://www.freescale.com/support
USA/Europe or Locations Not Listed:
Freescale Semiconductor, Inc.
Technical Information Center, EL516
2100 East Elliot Road
Tempe, Arizona 85284
1--800--521--6274 or +1--480--768--2130
www.freescale.com/support
Europe, Middle East, and Africa:
Freescale Halbleiter Deutschland GmbH
Technical Information Center
Schatzbogen 7
81829 Muenchen, Germany
+44 1296 380 456 (English)
+46 8 52200080 (English)
+49 89 92103 559 (German)
+33 1 69 35 48 48 (French)
www.freescale.com/support
Japan:
Freescale Semiconductor Japan Ltd.
Headquarters
ARCO Tower 15F
1--8--1, Shimo--Meguro, Meguro--ku,
Tokyo 153--0064
Japan
0120 191014 or +81 3 5437 9125
[email protected]
Asia/Pacific:
Freescale Semiconductor China Ltd.
Exchange Building 23F
No. 118 Jianguo Road
Chaoyang District
Beijing 100022
China
+86 10 5879 8000
[email protected]
For Literature Requests Only:
Freescale Semiconductor Literature Distribution Center
1--800--441--2447 or +1--303--675--2140
Fax: +1--303--675--2150
[email protected]
Information in this document is provided solely to enable system and software
implementers to use Freescale Semiconductor products. There are no express or
implied copyright licenses granted hereunder to design or fabricate any integrated
circuits or integrated circuits based on the information in this document.
Freescale Semiconductor reserves the right to make changes without further notice to
any products herein. Freescale Semiconductor makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose, nor does
Freescale Semiconductor assume any liability arising out of the application or use of
any product or circuit, and specifically disclaims any and all liability, including without
limitation consequential or incidental damages. “Typical” parameters that may be
provided in Freescale Semiconductor data sheets and/or specifications can and do
vary in different applications and actual performance may vary over time. All operating
parameters, including “Typicals”, must be validated for each customer application by
customer’s technical experts. Freescale Semiconductor does not convey any license
under its patent rights nor the rights of others. Freescale Semiconductor products are
not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life,
or for any other application in which the failure of the Freescale Semiconductor product
could create a situation where personal injury or death may occur. Should Buyer
purchase or use Freescale Semiconductor products for any such unintended or
unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all
claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that Freescale
Semiconductor was negligent regarding the design or manufacture of the part.
Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
© Freescale Semiconductor, Inc. 2011. All rights reserved.
MRF8S9232NR3
Document Number: MRF8S9232N
Rev. 0, 10/2011
16
RF Device Data
Freescale Semiconductor, Inc.