Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MRF8S9120N
Rev. 0, 9/2010
RF Power Field Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
MRF8S9120NR3
Designed for CDMA base station applications with frequencies from 700 to
1000 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulation formats.
• Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ =
800 mA, Pout = 33 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
920 MHz
20.1
34.6
6.3
--37.2
940 MHz
20.0
34.3
6.3
--37.3
960 MHz
19.8
34.2
6.3
--37.4
865--960 MHz, 33 W AVG., 28 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFET
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 120 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout), Designed for
Enhanced Ruggedness
• Typical Pout @ 1 dB Compression Point ≃ 120 Watts CW
880 MHz
• Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ =
800 mA, Pout = 33 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
865 MHz
20.8
35.0
6.2
--37.1
880 MHz
20.8
35.0
6.2
--37.5
895 MHz
20.6
34.8
6.2
--38.0
CASE 2021--03, STYLE 1
OM--780--2
PLASTIC
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C Operation
• Designed for Digital Predistortion Error Correction Systems
• Optimized for Doherty Applications
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +70
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
--65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
© Freescale Semiconductor, Inc., 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF8S9120NR3
1
Table 2. Thermal Characteristics
Characteristic
Value (1,2)
Symbol
Thermal Resistance, Junction to Case
Case Temperature 76°C, 33 W CW, 28 Vdc, IDQ = 800 mA, 960 MHz
Case Temperature 76°C, 120 W CW, 28 Vdc, IDQ = 800 mA, 960 MHz
RθJC
Unit
°C/W
0.62
0.51
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
3
260
°C
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 70 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 460 μAdc)
VGS(th)
1.4
2.2
2.9
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 800 mAdc, Measured in Functional Test)
VGS(Q)
2.3
3.1
3.8
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 2 Adc)
VDS(on)
0.1
0.2
0.3
Vdc
Characteristic
Off Characteristics
On Characteristics
Functional Tests (3) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 800 mA, Pout = 33 W Avg., f = 960 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Power Gain
Gps
19.0
19.8
22.0
dB
Drain Efficiency
ηD
33.0
34.2
—
%
PAR
6.0
6.3
—
dB
ACPR
—
--37.4
--36.4
dBc
IRL
—
--20
--12
dB
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 800 mA, Pout = 33 W Avg.,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
920 MHz
20.1
34.6
6.3
--37.2
--14
940 MHz
20.0
34.3
6.3
--37.3
--24
960 MHz
19.8
34.2
6.3
--37.4
--20
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
3. Part internally matched both on input and output.
(continued)
MRF8S9120NR3
2
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 800 mA, 920--960 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
—
120
—
—
16
—
W
IMD Symmetry @ 52 W PEP, Pout where IMD Third Order
Intermodulation  30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
—
46
—
MHz
Gain Flatness in 40 MHz Bandwidth @ Pout = 33 W Avg.
GF
—
0.3
—
dB
Gain Variation over Temperature
(--30°C to +85°C)
∆G
—
0.016
—
dB/°C
∆P1dB
—
0.002
—
dB/°C
Output Power Variation over Temperature
(--30°C to +85°C)
MHz
Typical Broadband Performance — 880 MHz (In Freescale 880 MHz Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 800 mA,
Pout = 33 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR
measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
865 MHz
20.8
35.0
6.2
--37.1
--12
880 MHz
20.8
35.0
6.2
--37.5
--13
895 MHz
20.6
34.8
6.2
--38.0
--13
MRF8S9120NR3
RF Device Data
Freescale Semiconductor
3
R1
C19
C21
C20
C15 C16
C13
C22
C4
C6 C8
C2
C3
C5
CUT OUT AREA
C1
R2
C11
C7 C9
C14
MRF8S9120N
Rev. 1
C12
C10
C17 C18
Figure 1. MRF8S9120NR3 Test Circuit Component Layout
Table 6. MRF8S9120NR3 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C11, C20
39 pF Chip Capacitors
ATC100B390JT500XT
ATC
C2
1.8 pF Chip Capacitor
ATC100B1R8BT500XT
ATC
C3
2.0 pF Chip Capacitor
ATC100B2R0BT500XT
ATC
C4, C10
2.7 pF Chip Capacitors
ATC100B2R7BT500XT
ATC
C5
6.8 pF Chip Capacitor
ATC100B6R8CT500XT
ATC
C6, C7
7.5 pF Chip Capacitors
ATC100B7R5CT500XT
ATC
C8, C9
2.2 pF Chip Capacitors
ATC100B2R2JT500XT
ATC
C12
0.8 pF Chip Capacitor
ATC100B0R8BT500XT
ATC
C13, C14
43 pF Chip Capacitors
ATC100B430JT500XT
ATC
C15, C16, C17, C18, C21
10 μF Chip Capacitors
GRM55DR61H106KA88L
Murata
C19
470 μF, 63 V Chip Capacitor
MCGPR63V477M13X26--RH
Multicomp
C22
47 μF, 50 V Chip Capacitor
476KXM050M
Illinois Capacitor
R1
3.3 Ω, 1/4 W Chip Resistor
P3.3VCT--ND
Panasonic
R2
10 Ω, 1/4 W Chip Resistor
CRCW120610R0JNEA
Vishay
PCB
0.030″, εr = 3.5
RF--35A2
Taconic
MRF8S9120NR3
4
RF Device Data
Freescale Semiconductor
Gps, POWER GAIN (dB)
36.5
35.5
19.8
34.5
19.6
Gps
19.4
33.5
Input Signal PAR = 7.5 dB @
0.01% Probability on CCDF
19.2
19
PARC
18.6
18.4
820
0
--35
--5
--36
IRL
18.8
--34
--37
ACPR
--38
--39
840
860
880
900
920
940
960
--10
--15
--20
--25
980
--1
--1.2
--1.4
--1.6
PARC (dB)
ηD
20
37.5
VDD = 28 Vdc, Pout = 33 W (Avg.), IDQ = 800 mA
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
IRL, INPUT RETURN LOSS (dB)
20.2
ACPR (dBc)
20.4
ηD, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
--1.8
--2
f, FREQUENCY (MHz)
IMD, INTERMODULATION DISTORTION (dBc)
Figure 2. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 33 Watts Avg.
--10
VDD = 28 Vdc, Pout = 52 W (PEP), IDQ = 800 mA
Two--Tone Measurements, (f1 + f2)/2 = Center
Frequency of 940 MHz
--20
IM3--L
--30
IM3--U
IM5--L
--40
IM5--U
IM7--L
--50
IM7--U
--60
1
10
100
TWO--TONE SPACING (MHz)
20.5
0
20
19.5
19
18.5
18
VDD = 28 Vdc, IDQ = 800 mA, f = 940 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
ηD
--1 dB = 30 W
--1
--15
50
--20
40
--2
30
--2 dB = 43 W
Gps
--3
--3 dB = 60 W
ACPR
--4
--5
60
20
30
40
50
20
PARC
60
70
--25
--30
ACPR (dBc)
1
ηD, DRAIN EFFICIENCY (%)
21
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
Gps, POWER GAIN (dB)
Figure 3. Intermodulation Distortion Products
versus Two--Tone Spacing
--35
10
--40
0
--45
Pout, OUTPUT POWER (WATTS)
Figure 4. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
MRF8S9120NR3
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
Gps, POWER GAIN (dB)
22
ηD
Gps
20
0
50
--10
40
18
920 MHz
30
940 MHz 960 MHz
ACPR
20
16
960 MHz
940 MHz
920 MHz
14
12
60
1
10
0
100 150
10
--20
--30
--40
ACPR (dBc)
VDD = 28 Vdc, IDQ = 800 mA, Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF
ηD, DRAIN EFFICIENCY (%)
24
--50
--60
Pout, OUTPUT POWER (WATTS) AVG.
Figure 5. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
30
24
Gain
20
16
10
12
0
IRL
8
--10
VDD = 28 Vdc
Pin = 0 dBm
IDQ = 800 mA
4
0
500
700
600
800
900
IRL (dB)
GAIN (dB)
20
1100
1000
1200
--20
--30
1300
f, FREQUENCY (MHz)
Figure 6. Broadband Frequency Response
W--CDMA TEST SIGNAL
100
10
0
--10
Input Signal
--30
0.1
0.01
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
0.001
0.0001
3.84 MHz
Channel BW
--20
1
(dB)
PROBABILITY (%)
10
0
1
2
3
4
5
6
--40
--50
--60
+ACPR in 3.84 MHz
Integrated BW
--ACPR in 3.84 MHz
Integrated BW
--70
--80
7
8
9
PEAK--TO--AVERAGE (dB)
Figure 7. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
10
--90
--100
--9
--7.2 --5.4
--3.6 --1.8
0
1.8
3.6
5.4
7.2
9
f, FREQUENCY (MHz)
Figure 8. Single--Carrier W--CDMA Spectrum
MRF8S9120NR3
6
RF Device Data
Freescale Semiconductor
VDD = 28 Vdc, IDQ = 800 mA, Pout = 33 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
820
2.75 -- j0.48
3.19 + j0.87
840
2.67 -- j0.21
2.95 + j1.16
860
2.61 -- j0.06
2.73 + j1.45
880
2.56 + j0.32
2.54 + j1.74
900
2.51 + j0.56
2.36 + j2.01
920
2.48 + j0.80
2.19 + j2.29
940
2.43 + j1.03
2.03 + j2.57
960
2.39 + j1.24
1.89 + j2.85
980
2.36 + j1.46
1.77 + j3.12
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 9. Series Equivalent Source and Load Impedance
MRF8S9120NR3
RF Device Data
Freescale Semiconductor
7
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
VDD = 28 Vdc, IDQ = 800 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
59
Pout, OUTPUT POWER (dBm)
58
57
Ideal
56
55
54
Actual
53
52
920 MHz
51
920 MHz
50
960 MHz
960 MHz
940 MHz
940 MHz
49
48
29
30
31
32
33
34
35
36
37
38
39
40
Pin, INPUT POWER (dBm)
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
P1dB
P3dB
f
(MHz)
Watts
dBm
Watts
dBm
920
168
52.3
202
53.1
940
160
52.0
195
52.9
960
154
51.9
188
52.7
Test Impedances per Compression Level
f
(MHz)
Zsource
Ω
Zload
Ω
920
P1dB
1.45 -- j2.02
1.28 -- j2.39
940
P1dB
1.78 -- j1.81
1.35 -- j2.74
960
P1dB
1.78 -- j2.35
1.33 -- j2.99
Figure 10. Pulsed CW Output Power
versus Input Power @ 28 V
MRF8S9120NR3
8
RF Device Data
Freescale Semiconductor
R1
C19
C21
C20
C13
C15 C16
C22
C4
R2
C6 C8
C2
C3
C5
CUT OUT AREA
C1
MRF8S9120N
Rev. 1
C11
C7 C9
C12
C10
C14
C17 C18
Figure 11. MRF8S9120NR3 Test Circuit Component Layout — 880 MHz
Table 7. MRF8S9120NR3 Test Circuit Component Designations and Values — 880 MHz
Part
Description
Part Number
Manufacturer
C1, C11, C20
47 pF Chip Capacitors
ATC100B470JT500XT
ATC
C2, C3, C4
3.3 pF Chip Capacitors
ATC100B3R3BT500XT
ATC
C5, C6, C7
7.5 pF Chip Capacitors
ATC100B7R5CT500XT
ATC
C8, C9
2.2 pF Chip Capacitors
ATC100B2R2JT500XT
ATC
C10
2.7 pF Chip Capacitor
ATC100B2R7BT500XT
ATC
C12
0.8 pF Chip Capacitor
ATC100B0R8BT500XT
ATC
C13, C14
43 pF Chip Capacitors
ATC100B430JT500XT
ATC
C15, C16, C17, C18, C21
10 μF Chip Capacitors
GRM55DR61H106KA88L
Murata
C19
470 μF, 63 V Electrolytic Capacitor
MCGPR63V477M13X26--RH
Multicomp
C22
47 μF, 50 V Electrolytic Capacitor
476KXM050M
Illinois Capacitor
R1
3.3 Ω, 1/4 W Chip Resistor
P3.3VCT--ND
Panasonic
R2
10 Ω, 1/4 W Chip Resistor
CRCW120610R0JNEA
Vishay
PCB
0.030″, εr = 3.5
RF-35A2
Taconic
MRF8S9120NR3
RF Device Data
Freescale Semiconductor
9
TYPICAL CHARACTERISTICS — 880 MHZ
3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @
0.01% Probability on CCDF
20.2
20
19.8
35
34.5
34
Gps
PARC
--35.5
--5.6
--36.1
--7.1
--36.7
19.6
ACPR
19.4
19.2
19
820
--37.3
--37.9
IRL
840
860
--38.5
880
900
920
940
960
--8.6
--10.1
--11.6
--13.1
980
--1
--1.2
--1.4
--1.6
PARC (dB)
Gps, POWER GAIN (dB)
ηD
IRL, INPUT RETURN LOSS (dB)
35.5
20.6
20.4
ηD, DRAIN
EFFICIENCY (%)
36
VDD = 28 Vdc, Pout = 33 W (Avg.), IDQ = 800 mA
Single--Carrier W--CDMA
20.8
ACPR (dBc)
21
--1.8
--2
f, FREQUENCY (MHz)
Figure 12. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 33 Watts Avg.
ηD
20
--20
53
--27
43
19
865 MHz
880 MHz
895 MHz
33
Gps
895 MHz
18
880 MHz
865 MHz
ACPR
17
16
63
1
23
13
10
3
300
100
--34
--41
--48
ACPR (dBc)
Gps, POWER GAIN (dB)
VDD = 28 Vdc, IDQ = 800 mA, Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth, Input Signal
21 PAR = 7.5 dB @ 0.01% Probability on CCDF
ηD, DRAIN EFFICIENCY (%)
22
--55
--62
Pout, OUTPUT POWER (WATTS) AVG.
Figure 13. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
30
24
20
20
16
10
12
0
IRL
8
--10
VDD = 28 Vdc
Pin = 0 dBm
IDQ = 800 mA
4
0
580
665
750
835
920
IRL (dB)
GAIN (dB)
Gain
1005
1090
1175
--20
--30
1260
f, FREQUENCY (MHz)
Figure 14. Broadband Frequency Response
MRF8S9120NR3
10
RF Device Data
Freescale Semiconductor
VDD = 28 Vdc, IDQ = 800 mA, Pout = 33 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
820
2.25 + j0.89
2.83 + j1.30
840
2.28 + j1.18
2.67 + j1.58
860
2.33 + j1.45
2.52 + j1.87
880
2.39 + j1.72
2.38 + j1.15
900
2.45 + j1.95
2.24 + j2.41
920
2.53 + j2.18
2.12 + j2.68
940
2.60 + j2.38
1.99 + j2.96
960
2.68 + j2.55
1.86 + j3.24
980
2.77 + j2.71
1.75 + j3.53
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 15. Series Equivalent Source and Load Impedance — 880 MHz
MRF8S9120NR3
RF Device Data
Freescale Semiconductor
11
PACKAGE DIMENSIONS
MRF8S9120NR3
12
RF Device Data
Freescale Semiconductor
MRF8S9120NR3
RF Device Data
Freescale Semiconductor
13
MRF8S9120NR3
14
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents, tools and software to aid your design process.
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
• .s2p File
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
Sept. 2010
Description
• Initial Release of Data Sheet
MRF8S9120NR3
RF Device Data
Freescale Semiconductor
15
How to Reach Us:
Home Page:
www.freescale.com
Web Support:
http://www.freescale.com/support
USA/Europe or Locations Not Listed:
Freescale Semiconductor, Inc.
Technical Information Center, EL516
2100 East Elliot Road
Tempe, Arizona 85284
1--800--521--6274 or +1--480--768--2130
www.freescale.com/support
Europe, Middle East, and Africa:
Freescale Halbleiter Deutschland GmbH
Technical Information Center
Schatzbogen 7
81829 Muenchen, Germany
+44 1296 380 456 (English)
+46 8 52200080 (English)
+49 89 92103 559 (German)
+33 1 69 35 48 48 (French)
www.freescale.com/support
Japan:
Freescale Semiconductor Japan Ltd.
Headquarters
ARCO Tower 15F
1--8--1, Shimo--Meguro, Meguro--ku,
Tokyo 153--0064
Japan
0120 191014 or +81 3 5437 9125
[email protected]
Asia/Pacific:
Freescale Semiconductor China Ltd.
Exchange Building 23F
No. 118 Jianguo Road
Chaoyang District
Beijing 100022
China
+86 10 5879 8000
[email protected]
For Literature Requests Only:
Freescale Semiconductor Literature Distribution Center
1--800--441--2447 or +1--303--675--2140
Fax: +1--303--675--2150
[email protected]
Information in this document is provided solely to enable system and software
implementers to use Freescale Semiconductor products. There are no express or
implied copyright licenses granted hereunder to design or fabricate any integrated
circuits or integrated circuits based on the information in this document.
Freescale Semiconductor reserves the right to make changes without further notice to
any products herein. Freescale Semiconductor makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose, nor does
Freescale Semiconductor assume any liability arising out of the application or use of
any product or circuit, and specifically disclaims any and all liability, including without
limitation consequential or incidental damages. “Typical” parameters that may be
provided in Freescale Semiconductor data sheets and/or specifications can and do
vary in different applications and actual performance may vary over time. All operating
parameters, including “Typicals”, must be validated for each customer application by
customer’s technical experts. Freescale Semiconductor does not convey any license
under its patent rights nor the rights of others. Freescale Semiconductor products are
not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life,
or for any other application in which the failure of the Freescale Semiconductor product
could create a situation where personal injury or death may occur. Should Buyer
purchase or use Freescale Semiconductor products for any such unintended or
unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all
claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that Freescale
Semiconductor was negligent regarding the design or manufacture of the part.
Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
© Freescale Semiconductor, Inc. 2010. All rights reserved.
MRF8S9120NR3
Document Number: MRF8S9120N
Rev. 0, 9/2010
16
RF Device Data
Freescale Semiconductor