Freescale Semiconductor Technical Data Document Number: MRF8S7120N Rev. 0, 5/2010 RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET MRF8S7120NR3 Designed for CDMA base station applications with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 600 mA, Pout = 32 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) ηD (%) Output PAR (dB) ACPR (dBc) 728 MHz 19.2 36.6 6.3 --38.3 748 MHz 19.2 37.1 6.4 --38.2 768 MHz 19.2 38.1 6.3 --37.6 728--768 MHz, 32 W AVG., 28 V SINGLE W--CDMA LATERAL N--CHANNEL RF POWER MOSFET • Capable of Handling 10:1 VSWR, @ 32 Vdc, 748 MHz, 178 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness • Typical Pout @ 1 dB Compression Point ≃ 125 Watts CW CASE 2021--03, STYLE 1 OM--780--2 PLASTIC Features • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Greater Negative Gate--Source Voltage Range for Improved Class C Operation • Designed for Digital Predistortion Error Correction Systems • Optimized for Doherty Applications • 225°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel. Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +70 Vdc Gate--Source Voltage VGS --6.0, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg --65 to +150 °C TC 150 °C TJ 225 °C Symbol Value (2,3) Case Operating Temperature Operating Junction Temperature (1,2) Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 31.5 W CW, 28 Vdc, IDQ = 600 mA, 748 MHz Case Temperature 80°C, 120 W CW, 28 Vdc, IDQ = 600 mA, 748 MHz RθJC 0.65 0.55 Unit °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. © Freescale Semiconductor, Inc., 2010. All rights reserved. RF Device Data Freescale Semiconductor MRF8S7120NR3 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2 (Minimum) Machine Model (per EIA/JESD22--A115) A (Minimum) Charge Device Model (per JESD22--C101) IV (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit 3 260 °C Per JESD22--A113, IPC/JEDEC J--STD--020 Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 70 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 460 μAdc) VGS(th) 1.5 2.3 3.0 Vdc Gate Quiescent Voltage (VDD = 28 Vdc, ID = 600 mAdc, Measured in Functional Test) VGS(Q) 2.3 3.0 3.8 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 2 Adc) VDS(on) 0.1 0.2 0.3 Vdc Characteristic Off Characteristics On Characteristics Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 600 mA, Pout = 32 W Avg., f = 768 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Power Gain Gps 18.0 19.2 21.0 dB Drain Efficiency ηD 35.0 38.1 — % Output Peak--to--Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss PAR 5.7 6.3 — dB ACPR — --37.6 --36.0 dBc IRL — --18 --9 dB Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 600 mA, Pout = 32 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Frequency Gps (dB) ηD (%) Output PAR (dB) ACPR (dBc) IRL (dB) 728 MHz 19.2 36.6 6.3 --38.3 --13 748 MHz 19.2 37.1 6.4 --38.2 --15 768 MHz 19.2 38.1 6.3 --37.6 --18 1. Part internally matched both on input and output. (continued) MRF8S7120NR3 2 RF Device Data Freescale Semiconductor Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 600 mA, 728--768 MHz Bandwidth Pout @ 1 dB Compression Point, CW P1dB — 125 — — 12 — W IMD Symmetry @ 111 W PEP, Pout where IMD Third Order Intermodulation 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) IMDsym VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) VBWres — 45 — MHz Gain Flatness in 40 MHz Bandwidth @ Pout = 32 W Avg. GF — 0.1 — dB Gain Variation over Temperature (--30°C to +85°C) ∆G — 0.016 — dB/°C ∆P1dB — 0.0047 — dB/°C Output Power Variation over Temperature (--30°C to +85°C) MHz MRF8S7120NR3 RF Device Data Freescale Semiconductor 3 B1 C25 C27 C22 C23 C20 C21 C7 C8 R1 C4 C5 R2 C10 CUT OUT AREA C2 C1 C26 C12 C15 C11 C13 C14 C9 C3 C6 C16 C17 C18 C19 MRF8S7120N Rev. 0 C24 Figure 1. MRF8S7120NR3 Test Circuit Component Layout Table 6. MRF8S7120NR3 Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1 RF Ferrite Bead MPZ2012S300AT000 TDK C1, C3, C4 2.7 pF Chip Capacitors ATC100B2R7BT500XT ATC C2, C7 100 pF Chip Capacitors ATC100B101JT500XT ATC C5, C6, C11, C12 8.2 pF Chip Capacitors ATC100B8R2CT500XT ATC C8 47 μF, 50 V Electrolytic Capacitor 476KXM050M Illinois Cap C9, C10 12 pF Chip Capacitors ATC100B120JT500XT ATC C13 5.6 pF Chip Capacitor ATC100B5R6CT500XT ATC C14 1.2 pF Chip Capacitor ATC100B1R2BT500XT ATC C15, C16, C17, C20, C21 39 pF Chip Capacitors ATC100B390JT500XT ATC C18, C19, C22, C23 10 μF, 50 V Chip Capacitors C5750X7R1H106KT TDK C24, C25 470 μF, 63 V Electrolytic Capacitors MCGPR63V477M13X26--RH Multicomp C26 1 pF Chip Capacitor ATC100B1R0BT500XT ATC C27 4.7 μF, 50 V Chip Capacitor C4532X7R1H475MT TDK R1 1 kΩ, 1/4 W Chip Resistor CRCW12061K00FKEA Vishay R2 6.2 Ω, 1/4 W Chip Resistor CRCW12066R20JNEA Vishay PCB 0.030″, εr = 3.5 TC350 Arlon MRF8S7120NR3 4 RF Device Data Freescale Semiconductor Gps, POWER GAIN (dB) 20.2 36 19.8 34 Gps 19.4 32 VDD = 28 Vdc, Pout = 32 W (Avg.), IDQ = 600 mA Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 19 18.6 18.2 17 710 --10 --38.5 IRL 720 --37 --38 ACPR 17.4 --7 --37.5 PARC 17.8 --36.5 730 740 --39 750 760 770 780 --13 --16 --19 --22 790 0 --0.5 --1 --1.5 PARC (dB) 38 IRL, INPUT RETURN LOSS (dB) 40 ηD 20.6 ACPR (dBc) 21 ηD, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS --2 --2.5 f, FREQUENCY (MHz) IMD, INTERMODULATION DISTORTION (dBc) Figure 2. Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 32 Watts Avg. --10 VDD = 28 Vdc, Pout = 111 W (PEP), IDQ = 600 mA Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 748 MHz --20 IM3--U --30 IM3--L IM5--U --40 IM5--L --50 IM7--L IM7--U --60 1 10 100 TWO--TONE SPACING (MHz) Figure 3. Intermodulation Distortion Products versus Two--Tone Spacing 18 17 16 15 --1 dB = 28 W --1 --2 dB = 40 W --2 ηD --20 60 --25 50 --3 dB = 55 W 40 --3 --4 Gps VDD = 28 Vdc, IDQ = 600 mA, f = 748 MHz Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF --5 --6 70 ACPR 20 40 60 80 PARC 100 30 --30 --35 ACPR (dBc) 19 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) Gps, POWER GAIN (dB) 20 0 ηD, DRAIN EFFICIENCY (%) 21 --40 20 --45 10 --50 120 Pout, OUTPUT POWER (WATTS) Figure 4. Output Peak--to--Average Ratio Compression (PARC) versus Output Power MRF8S7120NR3 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS 19 728 MHz --20 59 --27 48 768 MHz 18 70 748 MHz 37 17 Gps 768 MHz 748 MHz 16 15 728 MHz 4 300 15 1 26 100 10 --34 --41 --48 ACPR (dBc) VDD = 28 Vdc, IDQ = 600 mA, Single--Carrier W--CDMA ACPR 3.84 MHz Channel Bandwidth, Input Signal PAR = 20 7.5 dB @ 0.01% Probability ηD on CCDF ηD, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 21 --55 --62 Pout, OUTPUT POWER (WATTS) AVG. Figure 5. Single--Carrier W--CDMA Power Gain, Drain Efficiency and ACPR versus Output Power 0 22 Gain --5 18 --10 16 --15 14 IRL (dB) GAIN (dB) 20 --20 VDD = 28 Vdc Pin = 0 dBm IDQ = 600 mA 12 10 600 650 700 IRL 750 800 --25 850 900 950 --30 1000 f, FREQUENCY (MHz) Figure 6. Broadband Frequency Response W--CDMA TEST SIGNAL 100 10 0 --10 Input Signal --30 0.1 0.01 W--CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 0.001 0.0001 3.84 MHz Channel BW --20 1 (dB) PROBABILITY (%) 10 0 1 2 3 4 5 6 --40 --50 --60 +ACPR in 3.84 MHz Integrated BW --ACPR in 3.84 MHz Integrated BW --70 --80 7 8 9 PEAK--TO--AVERAGE (dB) Figure 7. CCDF W--CDMA IQ Magnitude Clipping, Single--Carrier Test Signal 10 --90 --100 --9 --7.2 --5.4 --3.6 --1.8 0 1.8 3.6 5.4 7.2 9 f, FREQUENCY (MHz) Figure 8. Single--Carrier W--CDMA Spectrum MRF8S7120NR3 6 RF Device Data Freescale Semiconductor VDD = 28 Vdc, IDQ = 600 mA, Pout = 32 W Avg. f MHz Zsource Ω Zload Ω 710 0.83 -- j1.35 2.23 -- j1.62 720 0.93 -- j1.28 2.18 -- j1.47 730 1.01 -- j1.25 2.16 -- j1.37 740 1.08 -- j1.25 2.15 -- j1.29 750 1.11 -- j1.28 2.12 -- j1.24 760 1.10 -- j1.29 2.06 -- j1.18 770 1.06 -- j1.28 2.00 -- j1.09 780 1.02 -- j1.24 1.95 -- j0.97 790 0.99 -- j1.18 1.94 -- j0.85 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 9. Series Equivalent Source and Load Impedance MRF8S7120NR3 RF Device Data Freescale Semiconductor 7 ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS VDD = 28 Vdc, IDQ = 600 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle 64 62 Pout, OUTPUT POWER (dBm) 60 Ideal 58 56 728 MHz 54 Actual 748 MHz 768 MHz 52 50 768 MHz 48 748 MHz 46 44 42 25 27 29 31 33 37 35 39 41 43 45 47 Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V P1dB P3dB f (MHz) Watts dBm Watts dBm 728 185 52.7 200 53.0 748 189 52.8 232 53.7 768 165 52.2 215 53.3 Test Impedances per Compression Level f (MHz) Zsource Ω Zload Ω 728 P1dB 0.87 -- j2.04 1.25 -- j1.39 748 P1dB 1.05 -- j2.23 1.16 -- j1.88 768 P1dB 1.07 -- j2.05 1.15 -- j2.58 Figure 10. Pulsed CW Output Power versus Input Power @ 28 V MRF8S7120NR3 8 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF8S7120NR3 RF Device Data Freescale Semiconductor 9 MRF8S7120NR3 10 RF Device Data Freescale Semiconductor MRF8S7120NR3 RF Device Data Freescale Semiconductor 11 PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents, tools and software to aid your design process. Application Notes • AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model • .s2p File For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 May 2010 Description • Initial Release of Data Sheet MRF8S7120NR3 12 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1--8--1, Shimo--Meguro, Meguro--ku, Tokyo 153--0064 Japan 0120 191014 or +81 3 5437 9125 [email protected] Asia/Pacific: Freescale Semiconductor China Ltd. Exchange Building 23F No. 118 Jianguo Road Chaoyang District Beijing 100022 China +86 10 5879 8000 [email protected] For Literature Requests Only: Freescale Semiconductor Literature Distribution Center 1--800--441--2447 or +1--303--675--2140 Fax: +1--303--675--2150 [email protected] Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2010. All rights reserved. MRF8S7120NR3 Document Number: RF Device Data MRF8S7120N Rev. 0, 5/2010 Freescale Semiconductor 13