Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MHT1008N
Rev. 0, 5/2016
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
MHT1008N
This 12.5 W CW high efficiency RF power transistor is designed for consumer
and commercial cooking applications operating in the 2450 MHz ISM band.
Typical Performance: VDD = 28 Vdc, IDQ = 110 mA
Frequency
(MHz)
2400
Signal Type
Gps
(dB)
PAE
(%)
Pout
(W)
CW
18.5
57.5
12.5
2450
18.6
56.3
12.5
2500
18.3
55.6
12.5
Result
2450 MHz, 12.5 W CW, 28 V
RF POWER LDMOS TRANSISTOR
FOR CONSUMER AND
COMMERCIAL COOKING
Load Mismatch/Ruggedness
Frequency
(MHz)
Signal Type
VSWR
Pin
(dBm)
Test
Voltage
2450
CW
> 5:1
at all Phase
Angles
26
(3 dB
Overdrive)
32
PLD--1.5W
PLASTIC
No Device
Degradation
Features
 Characterized with series equivalent large--signal impedance parameters and
common source S--parameters
 Qualified for operation at 32 Vdc
 Integrated ESD protection
 150C case operating temperature
 150C die temperature capability
Target Applications
 Consumer cooking as PA driver
 Commercial cooking as PA driver
 Freescale Semiconductor, Inc., 2016. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
Gate
Drain
(Top View)
Note: The center pad on the backside of the
package is the source terminal for the
transistor.
Figure 1. Pin Connections
MHT1008N
1
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain--Source Voltage
Rating
VDSS
–0.5, +65
Vdc
Gate--Source Voltage
VGS
–6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
–65 to +150
C
TC
–40 to +150
C
Case Operating Temperature Range
Operating Junction Temperature Range
(1,2)
Total Device Dissipation @ TC = 25C
Derate above 25C
TJ
–40 to +150
C
PD
48.1
0.38
W
W/C
Symbol
Value (2,3)
Unit
RJC
2.6
C/W
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 88C, 12.5 W CW, 28 Vdc, IDQ = 110 mA, 2450 MHz
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
1B, passes 500 V
Machine Model (per EIA/JESD22--A115)
A, passes 50 V
Charge Device Model (per JESD22--C101)
IV, passes 2000 V
Table 4. Moisture Sensitivity Level (MSL)
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
3
260
C
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 32 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
Adc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
Adc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 15.4 Adc)
VGS(th)
0.8
1.2
1.6
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 90 mAdc)
VGS(Q)
—
1.8
—
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 154 mAdc)
VDS(on)
0.1
0.2
0.3
Vdc
Characteristic
Off Characteristics
On Characteristics
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.nxp.com/RF/calculators.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
MHT1008N
2
RF Device Data
Freescale Semiconductor, Inc.
Table 6. Typical Performance
In Freescale Reference Circuit, 50 ohm system, VDD = 28 Vdc, IDQ = 110 mA
Frequency
Gps
(dB)
PAE
(%)
Pout
(W)
2400 MHz
18.5
57.5
12.5
2450 MHz
18.6
56.3
12.5
2500 MHz
18.3
55.6
12.5
Test Voltage, VDD
Result
32
No Device Degradation
Table 7. Load Mismatch/Ruggedness
In Freescale Reference Circuit, 50 ohm system, IDQ = 110 mA
Frequency
(MHz)
Signal Type
VSWR
Pin
(dBm)
2450
CW
> 5:1 at all
Phase Angles
26
(3 dB Overdrive)
Table 8. Ordering Information
Device
MHT1008NT1
Tape and Reel Information
T1 Suffix = 1,000 Units, 16 mm Tape Width, 7--inch Reel
Package
PLD--1.5W
MHT1008N
RF Device Data
Freescale Semiconductor, Inc.
3
TYPICAL CHARACTERISTICS
C, CAPACITANCE (pF)
50
Measured with 30 mV(rms)ac @ 1 MHz
VGS = 0 Vdc
Ciss
10
Coss
1
Crss
0.1
0
10
20
30
40
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 2. Capacitance versus Drain--Source Voltage
108
ID = 0.64 Amps
MTTF (HOURS)
107
VDD = 28 Vdc
0.79 Amps
106
0.956 Amps
105
104
90
110
130
150
170
TJ, JUNCTION TEMPERATURE (C)
Note: MTTF value represents the total cumulative operating time
under indicated test conditions.
MTTF calculator available at http:/www.nxp.com/RF/calculators.
Figure 3. MTTF versus Junction Temperature -- CW
MHT1008N
4
RF Device Data
Freescale Semiconductor, Inc.
Table 9. Load Pull Performance — Maximum Power Tuning
VDD = 28 Vdc, IDQ = 110 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Output Power
P1dB
f
(MHz)
Zsource
()
Zin
()
2400
1.17 – j4.20
1.06 + j3.49
2450
1.32 – j4.43
1.02 + j3.75
2500
1.31 – j4.68
1.11 + j4.20
Zload
()
(1)
Gain (dB)
(dBm)
(W)
D
(%)
PAE
(%)
5.82 + j0.19
19.6
42.2
17
58.5
57.6
5.72 – j0.22
19.1
42.1
16
56.3
55.4
5.38 – j0.45
19.1
42.0
16
56.0
55.7
Max Output Power
P3dB
f
(MHz)
Zsource
()
Zin
()
Zload (2)
()
Gain (dB)
(dBm)
(W)
D
(%)
PAE
(%)
2400
1.17 – j4.20
0.99 + j3.85
6.57 – j0.19
17.5
42.9
20
57.5
56.2
2450
1.32 – j4.43
0.94 + j4.07
6.48 – j0.57
17.0
42.8
19
56.1
54.8
2500
1.31 – j4.68
1.03 + j4.53
6.16 – j0.78
17.0
42.7
19
55.6
54.5
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Table 10. Load Pull Performance — Maximum Efficiency Tuning
VDD = 28 Vdc, IDQ = 110 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Efficiency
P1dB
f
(MHz)
Zsource
()
Zin
()
Zload (1)
()
Gain (dB)
(dBm)
(W)
D
(%)
PAE
(%)
2400
1.17 – j4.20
0.84 + j3.37
3.81 + j2.36
20.9
41.2
13
64.1
63.6
2450
1.32 – j4.43
0.84 + j3.64
4.11 + j1.95
20.4
41.2
13
62.0
61.4
2500
1.31 – j4.68
0.93 + j4.07
3.77 + j1.47
20.3
41.2
13
61.6
61.0
Max Efficiency
P3dB
Gain (dB)
(dBm)
(W)
D
(%)
PAE
(%)
4.18 + j2.19
18.8
42.0
16
63.4
62.6
0.81 + j3.94
4.43 + j1.56
18.2
42.1
16
61.5
60.6
0.89 + j4.39
3.96 + j1.16
18.1
41.9
16
61.2
60.2
f
(MHz)
Zsource
()
Zin
()
2400
1.17 – j4.20
0.81 + j3.70
2450
1.32 – j4.43
2500
1.31 – j4.68
Zload
()
(2)
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin
Zload
MHT1008N
RF Device Data
Freescale Semiconductor, Inc.
5
P3dB – TYPICAL LOAD PULL CONTOURS — 2450 MHz
39
IMAGINARY ()
3
4
41.5
40.5
54
42
3
40 41
2
E
42.5
1
0
P
–1
E 60
1
58
44
54
52
0
50
P
–1
–2
–3
56
2
IMAGINARY ()
4
48
46
–2
4
2
6
12
8
10
REAL ()
14
–3
16
Figure 4. P3dB Load Pull Output Power Contours (dBm)
4
19.5
19
IMAGINARY ()
3
4
2
6
8
10
REAL ()
12
14
16
Figure 5. P3dB Load Pull PAE Contours (%)
18.5
2
18
E
1
17.5
17
0
P
–1
16.5
–2
–3
15.5
2
4
16
6
8
10
REAL ()
12
14
16
Figure 6. P3dB Load Pull Gain Contours (dB)
NOTE:
P
= Maximum Output Power
E
= Maximum Power Added Efficiency
Gain
Power Added Efficiency
Output Power
MHT1008N
6
RF Device Data
Freescale Semiconductor, Inc.
2450 MHz REFERENCE CIRCUIT — 3  5 (7.6 cm  12.7 cm)
Table 11. 2450 MHz Performance (In Freescale Reference Circuit, 50 ohm system)
VDD = 28 Vdc, IDQ = 110 mA, TA = 25C
Frequency
(MHz)
Pin
(dBm)
Gps
(dB)
D
(%)
PAE
(%)
Pout
(W)
2400
22.5
18.5
58.7
57.5
12.5
2450
22.5
18.6
57.2
56.3
12.5
2500
22.7
18.3
56.3
55.6
12.5
Table 12. Load Mismatch/Ruggedness (In Freescale Reference Circuit)
Frequency
(MHz)
Signal
Type
2450
CW
VSWR
Pin
(dBm)
> 5:1 at all
Phase Angles
26
(3 dB Overdrive)
Test Voltage, VDD
Result
32
No Device
Degradation
MHT1008N
RF Device Data
Freescale Semiconductor, Inc.
7
2450 MHz REFERENCE CIRCUIT — 3  5 (7.6 cm  12.7 cm)
C9
C7
C6
C3
C4
R1
C12
C1*
C11
C2*
C5
D70982
MHT1008N
Rev. 0
C8
C10
*C1 and C2 are mounted vertically.
Figure 7. MHT1008N Reference Circuit Component Layout — 2450 MHz
Table 13. MHT1008N Reference Circuit Component Designations and Values — 2450 MHz
Part
Description
Part Number
Manufacturer
C1, C2, C3, C4, C5
6.8 pF Chip Capacitors
ATC100B6R8CT1500XT
ATC
C6, C7, C8
10 F Chip Capacitors
C5750X7S2A106M230KB
TDK
C9, C10
220 F Electrolytic Capacitors
227CKS050M
Illinois Capacitor
C11
1.0 pF Chip Capacitor
ATC100B1R0BT1500XT
ATC
C12
1.3 pF Chip Capacitor
ATC100B1R3BT1500XT
ATC
Q1
RF Power LDMOS Transistor
MHT1008N
NXP
R1
4.7 , 1/4 W Chip Resistor
CRCW12064R70FKEA
Vishay
PCB
Rogers RO4350B, 0.020, r = 3.66
D70982
MTL
MHT1008N
8
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — 2450 MHz REFERENCE CIRCUIT
22
65
20
60
PAE
19
18
55
50
Gps
17
16
15
14
Pout
15
14
2390
2410
2450
2430
13
12
2510
2490
2470
Pout, OUTPUT
POWER (WATTS)
Gps, POWER GAIN (dB)
21
PAE, POWER ADDED
EFFICIENCY (%)
70
VDD = 28 Vdc, Pin = 0.25 W, IDQ = 110 mA
f, FREQUENCY (MHz)
Figure 8. Power Gain, Power Added Efficiency and Output Power
versus Frequency at a Constant Input Power
16
f = 2450 MHz
10
Pout, OUTPUT POWER (WATTS)
Pout, OUTPUT POWER (WATTS)
14
VDD = 28 Vdc
Pin = 24 dBm
12
VDD = 28 Vdc
Pin = 21 dBm
10
8
6
4
Detail A
2
0
0
0.5
1
f = 2450 MHz
8
2
2.5
VDD = 28 Vdc
Pin = 21 dBm
4
2
0
1.5
VDD = 28 Vdc
Pin = 24 dBm
6
0
0.4
0.2
0.6
0.8
1
VGS, GATE--SOURCE VOLTAGE (VOLTS)
3
Detail A
VGS, GATE--SOURCE VOLTAGE (VOLTS)
VDD = 28 Vdc, IDQ = 110 mA
Gps, POWER GAIN (dB)
20
2500 MHz
19
17
55
2450 MHz
45
2500 MHz
35
2450 MHz
2400 MHz
18
65
f = 2400 MHz
Gps
PAE
16
15
30
15
2450 MHz
14
25
Pin
20
2400 MHz
13
12
25
15
2500 MHz
10
1
10
20
Pin, INPUT
POWER (WATTS)
22
21
PAE, POWER ADDED
EFFICIENCY (%)
Figure 9. Output Power versus Gate--Source Voltage
Pout, OUTPUT POWER (WATTS)
Figure 10. Power Gain, Power Added Efficiency and
Input Power versus Output Power and Frequency
MHT1008N
RF Device Data
Freescale Semiconductor, Inc.
9
21
VDD = 28 Vdc, IDQ = 110 mA
f = 2450 MHz
20
Gps, POWER GAIN (dB)
60
TC = 25_C
50
125_C
85_C 125_C
19 25_C
Gps
20
10
PAE
16
30
15
125_C
25
14
20
Pin
13
12
0.5
40
30
18
17
85_C
85_C
25_C
10
1
15
10
20
Pin, INPUT
POWER (WATTS)
22
PAE, POWER ADDED
EFFICIENCY (%)
TYPICAL CHARACTERISTICS — 2450 MHz REFERENCE CIRCUIT
Pout, OUTPUT POWER (WATTS)
Figure 11. Power Gain, Power Added Efficiency and
Input Power versus Output Power and Temperature
MHT1008N
10
RF Device Data
Freescale Semiconductor, Inc.
0.28
(7.11)
0.165
(4.91)
0.089
(2.26)
0.155
(3.94)
Solder pad with
thermal via structure.
0.085
(2.16)
Inches
(mm)
Figure 12. PCB Pad Layout for PLD--1.5W
MT008
N( )A
WLYWWZ
Figure 13. Product Marking
MHT1008N
RF Device Data
Freescale Semiconductor, Inc.
11
PACKAGE DIMENSIONS
MHT1008N
12
RF Device Data
Freescale Semiconductor, Inc.
MHT1008N
RF Device Data
Freescale Semiconductor, Inc.
13
MHT1008N
14
RF Device Data
Freescale Semiconductor, Inc.
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the resources to aid your design process.
Application Notes
 AN1907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages
 AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
 EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
 Electromigration MTTF Calculator
 RF High Power Model
 .s2p File
Development Tools
 Printed Circuit Boards
To Download Resources Specific to a Given Part Number:
1. Go to http://www.nxp.com/RF
2. Search by part number
3. Click part number link
4. Choose the desired resource from the drop down menu
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
May 2016
Description
 Initial Release of Data Sheet
MHT1008N
RF Device Data
Freescale Semiconductor, Inc.
15
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E 2016 Freescale Semiconductor, Inc.
MHT1008N
Document Number: MHT1008N
Rev. 0, 5/2016
16
RF Device Data
Freescale Semiconductor, Inc.