Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MHT1006N
Rev. 1, 12/2015
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
RF power transistor suitable for industrial heating applications from 728 to
2700 MHz. Device is capable of both CW and pulse operation.
2300 MHz
 Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc, IDQ = 90 mA,
Pout = 1.26 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on
CCDF.(1)
Frequency
Gps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
2300 MHz
21.2
23.6
9.0
–40.9
–10
2350 MHz
21.6
22.6
8.6
–40.0
–22
2400 MHz
20.7
21.0
8.3
–40.1
–9
MHT1006NT1
728–2700 MHz, 10 W CW, 28 V
INDUSTRIAL HEATING, RUGGED
RF POWER LDMOS TRANSISTOR
Features
 Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
 Designed for Digital Predistortion Error Correction Systems
 Universal Broadband Driven Device with Internal RF Feedback
PLD--1.5W
PLASTIC
RFin/VGS
RFout/VDS
(Top View)
Note: The center pad on the backside of the
package is the source terminal for the
transistor.
Figure 1. Pin Connections
1. All data measured in fixture with device soldered to heatsink.
 Freescale Semiconductor, Inc., 2014–2015. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MHT1006NT1
1
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain--Source Voltage
Rating
VDSS
–0.5, +65
Vdc
Gate--Source Voltage
VGS
–6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
–65 to +150
C
Case Operating Temperature Range
TC
–40 to +150
C
(1,2)
TJ
–40 to +150
C
Characteristic
Symbol
Value (2,3)
Unit
RJC
3.7
C/W
Operating Junction Temperature Range
Table 2. Thermal Characteristics
Thermal Resistance, Junction to Case
Case Temperature 81C, 10 W CW, 28 Vdc, IDQ = 90 mA, 2140 MHz
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
1B
Machine Model (per EIA/JESD22--A115)
A
Charge Device Model (per JESD22--C101)
III
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
3
260
C
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
Adc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
Adc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 12.1 Adc)
VGS(th)
0.8
1.2
1.6
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 90 mAdc, Measured in Functional Test)
VGS(Q)
1.5
1.8
2.3
Vdc
Drain--Source On--Voltage
(VGS = 6 Vdc, ID = 121 mAdc)
VDS(on)
0.1
0.2
0.3
Vdc
Characteristic
Off Characteristics
On Characteristics
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select
Documentation/Application Notes -- AN1955.
(continued)
MHT1006NT1
2
RF Device Data
Freescale Semiconductor, Inc.
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Typical Performance over Frequency (1) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 90 mA, Pout = 1.26 W Avg., Input
Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
Frequency
Gps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
2300 MHz
21.2
23.6
9.0
–40.9
–10
2350 MHz
21.6
22.6
8.6
–40.0
–22
2400 MHz
20.7
21.0
8.3
–40.1
–9
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 90 mA, Pout = 1.26 W Avg., f = 2170 MHz, Single--Carrier
W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel
Bandwidth @ 5 MHz Offset.
Characteristic
Symbol
Min
Typ
Max
Unit
Power Gain
Gps
20.0
21.7
—
dB
Drain Efficiency
D
18.5
21.5
—
%
ACPR
—
–40.6
–37.9
dBc
IRL
—
–14
–9
dB
Adjacent Channel Power Ratio
Input Return Loss
Load Mismatch (In Freescale Test Fixture, 50 ohm system) IDQ = 90 mA, f = 2140 MHz
VSWR 5:1 at 32 Vdc, 13.9 W CW Output Power
(3 dB Input Overdrive from 10 W CW Rated Power)
No Device Degradation
Typical Performance (1) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 90 mA, 2110–2170 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
—
10
—
W

—
–12.6
—

VBWres
—
120
—
MHz
Gain Flatness in 60 MHz Bandwidth @ Pout = 1.26 W Avg.
GF
—
0.20
—
dB
Gain Variation over Temperature
(–30C to +85C)
G
—
0.011
—
dB/C
P1dB
—
0.004
—
dB/C
AM/PM
(Maximum value measured at the P3dB compression point across the
2110–2170 MHz frequency range.)
VBW Resonance Point
(IMD Seventh Order Intermodulation Inflection Point)
Output Power Variation over Temperature
(–30C to +85C)
Table 6. Ordering Information
Device
MHT1006NT1
Tape and Reel Information
T1 Suffix = 1000 Units, 16 mm Tape Width, 7--inch Reel
Package
PLD--1.5W
1. All data measured in fixture with device soldered to heatsink.
MHT1006NT1
RF Device Data
Freescale Semiconductor, Inc.
3
VGG
VDD
C13
C12
C11
C6
C5
C7
R1
C1
C14
Q1
C2
C4
C3
C8
C9
C10
2300MHz/2500MHz
VDD
NOTE: All data measured in fixture with device soldered to heatsink.
Figure 2. MHT1006NT1 Test Circuit Component Layout — 2300–2400 MHz
Table 7. MHT1006NT1 Test Circuit Component Designations and Values — 2300–2400 MHz
Part
Description
Part Number
Manufacturer
C1, C4, C5, C7, C8
6.8 pF Chip Capacitors
ATC100B6R8JT500XT
ATC
C2, C14
1 pF Chip Capacitors
ATC100B1R0JT500XT
ATC
C3
1.2 pF Chip Capacitor
ATC100B1R2JT500XT
ATC
C6, C9, C10, C11, C12
10 F Chip Capacitors
GRM32ER61H106KA12L
Murata
C13
220 F, 50 V Electrolytic Capacitor
227CKS050M
Illinois Capacitor
Q1
RF Power LDMOS Transistor
MHT1006NT1
Freescale
R1
4.75 , Chip Resistor
CRCW12064R75FKEA
Vishay
PCB
Rogers RO4350B, 0.020, r = 3.66
—
MTL
MHT1006NT1
4
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — 2300–2400 MHz
21.4
Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @
0.01% Probability on CCDF
21.2 G
ps
21
22
D
20
ACPR
20.8
20.6
21
20
2290
2305
2320
2335
--40
--5
--42
IRL
20.2
0
--41
PARC
20.4
--39
--43
2350
2365
2380
2395
--10
--15
--20
--25
--44
2410
0
--0.5
--1
--1.5
--2
PARC (dB)
21.6
Gps, POWER GAIN (dB)
23
VDD = 28 Vdc
Pout = 1.26 W (Avg.)
IDQ = 90 mA
ACPR (dBc)
21.8
D, DRAIN
EFFICIENCY (%)
24
IRL, INPUT RETURN LOSS (dB)
22
--2.5
f, FREQUENCY (MHz)
Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 1.26 W Avg.
2300 MHz
22
2400 MHz
20
50
0
30
18
2350 MHz
ACPR
D
14
10
2350 MHz 40
Gps
16
60
2350 MHz
0.3
2300 MHz
2300 MHz
2400 MHz
10
2400 MHz
10
1
20
0
20
--10
--20
--30
ACPR (dBc)
Gps, POWER GAIN (dB)
24
VDD = 28 Vdc, IDQ = 90 mA, Single--Carrier
W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal = 9.9 dB @ 0.01%
Probability on CCDF
D, DRAIN EFFICIENCY (%)
26
--40
--50
Pout, OUTPUT POWER (WATTS) AVG.
Figure 4. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
30
5
0
Gain
20
--5
15
--10
--15
10
5
IRL (dB)
GAIN (dB)
25
IRL
VDD = 28 Vdc
Pin = 0 dBm
IDQ = 90 mA
0
2050
2150
--20
2250
2350
2450
2550
--25
2650
f, FREQUENCY (MHz)
Figure 5. Broadband Frequency Response
MHT1006NT1
RF Device Data
Freescale Semiconductor, Inc.
5
VDD = 28 Vdc, IDQ = 87 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Output Power
P1dB
f
(MHz)
Zsource
()
Zin
()
Zload (1)
()
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
2300
1.12 – j1.10
0.995 + j1.38
5.39 + j2.23
20.1
40.9
12
55.9
–12
2400
1.06 – j1.59
0.948 + j1.96
5.09 + j1.86
19.8
40.9
12
55.1
–12
2500
1.00 – j1.60
1.29 + j1.95
4.51 + j1.56
19.2
40.8
12
55.8
–10
2600
0.985 – j3.50
0.743 + j3.66
4.81 + j1.10
19.0
41.3
13
56.2
–14
2690
1.10 – j3.13
1.48 + j2.98
4.14 + j0.987
19.0
41.0
13
57.5
–12
Max Output Power
P3dB
f
(MHz)
Zsource
()
Zin
()
Zload (2)
()
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
2300
1.12 – j1.10
0.919 + j1.64
6.28 + j1.74
17.8
41.7
15
55.0
–19
2400
1.06 – j1.59
0.861 + j2.23
5.86 + j1.41
17.5
41.7
15
54.4
–19
2500
1.00 – j1.60
1.37 + j2.32
5.40 + j1.17
16.9
41.7
15
55.8
–17
2600
0.985 – j3.50
0.579 + j3.82
5.37 + j0.912
16.9
42.0
16
55.8
–22
2690
1.10 – j3.13
1.74 + j3.43
5.04 + j0.759
16.8
41.8
15
57.1
–18
(1) Load impedance for optimum P1dB power. (2) Load impedance for optimum P3dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Figure 6. Load Pull Performance — Maximum Power Tuning
VDD = 28 Vdc, IDQ = 87 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Drain Efficiency
P1dB
f
(MHz)
Zsource
()
Zin
()
Zload (1)
()
2300
1.12 - j1.10
0.855 + j1.22
3.36 + j4.23
21.6
39.8
9
61.9
–20
2400
1.06 - j1.59
0.829 + j1.80
3.34 + j3.53
21.2
39.9
10
60.4
–19
2500
1.00 - j1.60
1.04 + j1.82
3.21 + j3.00
20.8
40.0
10
61.1
–16
2600
0.985 - j3.50
0.709 + j3.49
3.17 + j2.53
20.0
40.5
11
60.7
–20
2690
1.10 - j3.13
1.14 + j2.91
2.87 + j2.16
20.4
40.2
10
62.0
–18
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
Max Drain Efficiency
P3dB
f
(MHz)
Zsource
()
Zin
()
Zload (2)
()
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
2300
1.12 – j1.10
0.803 + j1.51
3.96 + j4.10
19.4
40.7
12
61.1
–27
2400
1.06 – j1.59
0.757 + j2.07
3.70 + j3.45
19.1
40.6
12
59.8
–27
2500
1.00 – j1.60
1.15 + j2.18
3.58 + j2.94
18.7
40.8
12
61.2
–24
2600
0.985 – j3.50
0.556 + j3.73
4.15 + j2.29
17.8
41.5
14
59.7
–26
2690
1.10 – j3.13
1.43 + j3.33
3.40 + j2.01
18.2
41.1
13
61.7
–25
(1) Load impedance for optimum P1dB efficiency. (2) Load impedance for optimum P3dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Figure 7. Load Pull Performance — Maximum Drain Efficiency Tuning
Input Load Pull
Tuner and Test
Circuit
MHT1006NT1
6
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin
Zload
RF Device Data
Freescale Semiconductor, Inc.
P1dB -- TYPICAL LOAD PULL CONTOURS — 2500 MHz
6
6
IMAGINARY ()
5
39
38 38.5
39.5
37.5
40
4
3
4
E
40.5
2
P
3
0
0
2
40
39.5
3
4
5
7
6
--1
8
58
60
P
1
39
E
2
1
--1
46
46
5
IMAGINARY ()
37
56
52
54
50
48
46
3
2
4
5
6
7
8
REAL ()
REAL ()
Figure 8. P1dB Load Pull Output Power Contours (dBm)
Figure 9. P1dB Load Pull Efficiency Contours (%)
6
6
5
21
3
20.5
20
E
19.5
2
P
19
1
18.5
18
--24 --20
--16
3
E
--18
--14
2
--12
--10
0
2
3
4
5
P
1
0
--1
--22
4
IMAGINARY ()
IMAGINARY ()
4
5
21.5
22
6
7
8
--1
2
3
4
5
6
7
REAL ()
REAL ()
Figure 10. P1dB Load Pull Gain Contours (dB)
Figure 11. P1dB Load Pull AM/PM Contours ()
NOTE:
P
= Maximum Output Power
E
= Maximum Drain Efficiency
8
Gain
Drain Efficiency
Linearity
Output Power
MHT1006NT1
RF Device Data
Freescale Semiconductor, Inc.
7
P3dB -- TYPICAL LOAD PULL CONTOURS — 2500 MHz
6
6
IMAGINARY ()
5
39
39.5
38.5
4
E
41.5
2
P
1
3
E
60
58
54
P
52
50
0
40
2
41
3
4
48
56
2
1
0
--1
50
4
41
3
48 50
46
5
40.5
40
IMAGINARY ()
37.5
38
5
7
6
--1
8
48
46
2
3
4
5
7
6
8
REAL ()
REAL ()
Figure 12. P3dB Load Pull Output Power Contours (dBm)
Figure 13. P3dB Load Pull Efficiency Contours (%)
6
6
5
5
19
3
18.5
18
E
17.5
2
--1
17
P
1
2
3
4
--24
--30 --26
3
--20
--18
E
--16
2
P
1
16.5
16
0
--28
4
IMAGINARY ()
4
IMAGINARY ()
19.5
20
--14
--22
0
5
6
7
8
--1
2
3
4
5
6
7
REAL ()
REAL ()
Figure 14. P3dB Load Pull Gain Contours (dB)
Figure 15. P3dB Load Pull AM/PM Contours ()
NOTE:
P
= Maximum Output Power
E
= Maximum Drain Efficiency
8
Gain
Drain Efficiency
Linearity
Output Power
MHT1006NT1
8
RF Device Data
Freescale Semiconductor, Inc.
0.28
7.11
0.165
4.91
0.089
2.26
Solder pad with thermal via
structure. All dimensions in mm.
0.155
3.94
0.085
2.16
Figure 16. PCB Pad Layout for PLD--1.5W
MHT16
N( )B
AWLYWZ
Figure 17. Product Marking
MHT1006NT1
RF Device Data
Freescale Semiconductor, Inc.
9
PACKAGE DIMENSIONS
MHT1006NT1
10
RF Device Data
Freescale Semiconductor, Inc.
MHT1006NT1
RF Device Data
Freescale Semiconductor, Inc.
11
MHT1006NT1
12
RF Device Data
Freescale Semiconductor, Inc.
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following resources to aid your design process.
Application Notes
 AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
 EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
 Electromigration MTTF Calculator
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software
& Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
May 2014
 Initial Release of Data Sheet
1
Dec. 2015
 Table 1, Maximum Ratings: corrected operating junction temperature range upper limit, p. 2
 Table 5, Electrical Characteristics, On Characteristics VDS(on): updated ID unit of measure to mAdc to
reflect actual unit of measure, p. 2
 Added Ordering Information Table 6, p. 3
MHT1006NT1
RF Device Data
Freescale Semiconductor, Inc.
13
APPENDIX A: 2110–2170 MHz
TYPICAL PERFORMANCE DATA, LAYOUT AND PARTS LIST
Typical Performance over Frequency (1) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 90 mA, Pout = 1.26 W Avg., Input
Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
Frequency
Gps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
2110 MHz
21.6
23.2
9.1
–42.0
–11
2140 MHz
21.8
23.0
9.0
–41.5
–15
2170 MHz
21.7
22.6
8.7
–41.7
–15
VDD
VGG
C7
C13
C6
C12
C8
R1
C1*
Q1
C2
C5*
C4
C3
C9
C10
C11
2100MHz
VDD
*C1 and C5 are mounted vertically.
1. All data measured in fixture with device soldered to heatsink.
Figure A--1. MHT1006NT1 Test Circuit Component Layout — 2110–2170 MHz
Table A--1. MHT1006NT1 Test Circuit Component Designations and Values — 2110–2170 MHz
Part
Description
Part Number
Manufacturer
C1, C5, C6, C8, C9
9.1 pF Chip Capacitors
ATC100B9R1JT500XT
ATC
C2
1.1 pF Chip Capacitor
ATC100B1R1JT500XT
ATC
C3
2.0 pF Chip Capacitor
ATC100B2R0JT500XT
ATC
C4
1.0 pF Chip Capacitor
ATC100B1R0JT500XT
ATC
C7, C10, C11, C12, C13
10 F Chip Capacitors
GRM32ER61H106KA12L
Murata
Q1
RF Power LDMOS Transistor
MHT1006NT1
Freescale
R1
2.37  Chip Resistor
CRCW12062R37FKEA
Vishay
PCB
Rogers RO4350B, 0.020, r = 3.66
—
MTL
MHT1006NT1
14
RF Device Data
Freescale Semiconductor, Inc.
APPENDIX B: 2500–2700 MHz
TYPICAL PERFORMANCE DATA AND GRAPHS, LAYOUT AND PARTS LIST
Typical Performance over Frequency (1) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 90 mA, Pout = 1.26 W Avg., Input
Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
Frequency
Gps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
2500 MHz
19.6
22.0
9.8
–44.8
–7
2600 MHz
21.0
22.7
9.4
–41.4
–15
2700 MHz
19.6
21.2
8.9
–39.7
–5
VGG
VDD
C13
C12
C11
C6
C5
C7
R1
C1
C4
Q1
C3
C2
C8
C9
C10
2300MHz/2500MHz
VDD
1. All data measured in fixture with device soldered to heatsink.
Figure B--1. MHT1006NT1 Test Circuit Component Layout — 2500–2700 MHz
Table B--1. MHT1006NT1 Test Circuit Component Designations and Values — 2500–2700 MHz
Part
Description
Part Number
Manufacturer
C1, C4, C5, C7, C8
6.8 pF Chip Capacitors
ATC100B6R8JT500XT
ATC
C2
1.2 pF Chip Capacitor
ATC100B1R2JT500XT
ATC
C3
1 pF Chip Capacitor
ATC100B1R0JT500XT
ATC
C6, C9, C10, C11, C12
10 F Chip Capacitors
GRM32ER61H106KA12L
Murata
C13
220 F, 50 V Electrolytic Capacitor
227CKS050M
Illinois Capacitor
Q1
RF Power LDMOS Transistor
MHT1006NT1
Freescale
R1
4.75  Chip Resistor
CRCW12064R75FKEA
Vishay
PCB
Rogers RO4350B, 0.020, r = 3.66
—
MTL
MHT1006NT1
RF Device Data
Freescale Semiconductor, Inc.
15
Appendix B: 2500–2700 MHz Typical Performance Data and Graphs, Layout and Parts List (continued)
TYPICAL CHARACTERISTICS — 2500–2700 MHz
22
VDD = 28 Vdc, Pout = 1.26 W (Avg.)
IDQ = 90 mA, Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
22
21.5
21
20
Gps
21
IRL
20.5
PARC
20
19.5
19
2510
0
--38
--5
--40
--42
ACPR
18.5
2480
--36
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
2540
2570
2600
2630
2660
2690
--44
--46
2720
--10
--15
--20
--25
0
--0.5
--1
--1.5
--2
PARC (dB)
Gps, POWER GAIN (dB)
22.5
IRL, INPUT RETURN LOSS (dB)
23
ACPR (dBc)
D
23
D, DRAIN
EFFICIENCY (%)
24
23.5
--2.5
f, FREQUENCY (MHz)
Figure B--2. Single--Carrier Output Peak--to--Average Ratio
Compression (PARC) Broadband Performance @ Pout = 1.26 W Avg.
2500 MHz
Gps
20
ACPR
18
2700 MHz
2600 MHz
2600 MHz
2500 MHz
14
D
12
55
--20
45
25
2500 MHz
2700 MHz
2600 MHz
1
0.3
--10
35
2700 MHz
16
65
15
5
20
10
--30
--40
--50
ACPR (dBc)
Gps, POWER GAIN (dB)
VDD = 28 Vdc, IDQ = 90 mA, Single--Carrier, W--CDMA
3.84 MHz Channel Bandwidth, Input Signal = 9.9 dB @
22 0.01% Probability on CCDF
D, DRAIN EFFICIENCY (%)
24
--60
--70
Pout, OUTPUT POWER (WATTS) AVG.
Figure B--3. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
30
VDD = 28 Vdc
Pin = 0 dBm
IDQ = 90 mA
5
Gain
20
0
15
--5
10
IRL (dB)
GAIN (dB)
25
10
--10
IRL
5
--15
0
2300
2400
2500
2600
2700
2800
--20
2900
f, FREQUENCY (MHz)
Figure B--4. Broadband Frequency Response
MHT1006NT1
16
RF Device Data
Freescale Semiconductor, Inc.
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MHT1006NT1
Document
Number:
RF
Device
Data MHT1006N
Rev. 1, 12/2015
Freescale
Semiconductor, Inc.
17