Ordering number : ENA1243C CPH6444 N-Channel Power MOSFET http://onsemi.com 60V, 4.5A, 78mΩ, Single CPH6 Features • • Low ON-resistance 4V drive • • Protection diode in Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Conditions Ratings Unit VDSS VGSS Gate to Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Allowable Power Dissipation Channel Temperature PD Tch Storage Temperature Tstg 60 V ±20 V 4.5 A PW≤10μs, duty cycle≤1% 18 A When mounted on ceramic substrate (900mm2×0.8mm) 1.6 W 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Ordering & Package Information Package Dimensions unit : mm (typ) 7018A-003 Device Package CPH6444-TL-W 5 4 0.9 3,000 pcs./reel Packing Type: TL Marking 2 0.95 ZW 1 3 0.4 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain LOT No. 0.05 1.6 0.2 0.6 2.8 0.2 0.6 6 memo Pb-Free and Halogen Free CPH6444-TL-W 0.15 2.9 CPH6 SC-74, SOT-26, SOT-457 Shipping TL Electrical Connection 1, 2, 5, 6 CPH6 3 4 Semiconductor Components Industries, LLC, 2013 July, 2013 71013 TKIM TC-00002972/62712 TKIM/22509 MSIM/61808PE TIIM TC-00001431 No. A1243-1/6 CPH6444 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions typ Unit max 60 V Drain to Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate to Source Leakage Current IGSS Cutoff Voltage VGS(off) VGS=±16V, VDS=0V VDS=10V, ID=1mA 1.2 Forward Transfer Admittance | yfs | VDS=10V, ID=2A 1.8 RDS(on)1 ID=2A, VGS=10V 60 78 mΩ RDS(on)2 ID=1A, VGS=4.5V 74 104 mΩ RDS(on)3 ID=1A, VGS=4V 81 114 mΩ Static Drain to Source On-State Resistance Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time ID=1mA, VGS=0V VDS=60V, VGS=0V Ratings min 1 μA ±10 μA 2.6 3 V S 505 pF 57 pF Crss 37 pF 7.3 ns Rise Time td(on) tr Turn-OFF Delay Time td(off) Fall Time tf Qg Total Gate Charge Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=20V, f=1MHz See specified Test Circuit. VDS=30V, VGS=10V, ID=4.5A IS=4.5A, VGS=0V 9.8 ns 40 ns 24 ns 10 nC 1.6 nC 2.1 nC 0.83 1.2 V Switching Time Test Circuit VDD=30V VIN 10V 0V ID=2A RL=15Ω VOUT VIN D PW=10μs D.C.≤1% G CPH6444 P.G 50Ω S No. A1243-2/6 CPH6444 ID -- VDS V 3.5 1.5 1.0 VGS=2.5V 2.5 2.0 1.5 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Drain to Source Voltage, VDS -- V 0 1.0 Static Drain to Source On-State Resistance, RDS(on) -- mΩ ID=1A 2A 130 120 110 100 90 80 70 60 50 2 4 6 8 10 12 14 Gate to Source Voltage, VGS -- V 5 16 Source Current, IS -- A 2 Ta °C 75 7 °C 25 °C 5 3 2 2 3 5 7 0.1 3 2 5 7 1.0 2 3 Drain Current, ID -- A A =1 , ID V .0 A =1 , ID A V =2 .5 =4 , ID V S 0 VG 0. =1 V GS =4 V GS 90 80 70 60 50 40 --40 --20 0 20 40 60 80 100 120 140 160 IT13792 IS -- VSD VGS=0V 3 2 1.0 7 5 3 2 0.1 7 5 0.01 0.2 5 7 10 IT13793 VDD=30V VGS=10V Ciss, Coss, Crss -- pF tf 10 td(on) 7 tr 1.0 1.2 IT13794 Ciss 5 2 0.8 f=1MHz 7 3 5 0.6 Ciss, Coss, Crss -- VDS 1000 td(off) 5 0.4 Diode Forward Voltage, VSD -- V SW Time -- ID 7 3 2 100 7 Coss 5 Crss 3 2 3 2 0.1 110 100 3 2 0.1 7 0.01 4.0 IT13790 120 10 7 5 3 1.0 3.5 Ambient Temperature, Ta -- °C VDS=10V -25 =- 3.0 130 IT13791 | yfs | -- ID 7 2.5 140 30 20 --60 40 30 0 2.0 150 150 140 1.5 RDS(on) -- Ta 160 Ta=25°C 160 1.0 Gate to Source Voltage, VGS -- V RDS(on) -- VGS 170 0.5 IT13789 Ta=7 5°C 25° C --25 °C 0 Static Drain to Source On-State Resistance, RDS(on) -- mΩ 3.0 0.5 0 Forward Transfer Admittance, | yfs | -- S 3.5 1.0 0.5 Switching Time, SW Time -- ns 4.0 25°C 2.0 4.5 5°C 3.0V --25 °C 2.5 5.0 Ta= 7 3.0 VDS=10V 5.5 Drain Current, ID -- A Drain Current, ID -- A 3.5 ID -- VGS 6.0 4 .5 15.0 V 10.0V 4.0 V 4 .0V 7.0V 4.5 10 2 3 5 7 1.0 2 Drain Current, ID -- A 3 5 7 IT13795 0 10 20 30 40 50 Drain to Source Voltage, VDS -- V 60 IT13796 No. A1243-3/6 CPH6444 VGS -- Qg 10 3 2 8 Drain Current, ID -- A Gate to Source Voltage, VGS -- V 9 7 6 5 4 3 1.0 7 5 3 2 1 3 2 1 2 3 4 5 6 7 8 Total Gate Charge, Qg -- nC 9 10 IT13797 PD -- Ta 1.8 IDP=18A(PW≤10μs) 10 0 1m μs s 10 ms 10 0m s ID=4.5A 3 2 2 0 Allowable Power Dissipation, PD -- W 10 7 5 0.1 7 5 0 ASO 5 VDS=30V ID=4.5A DC op era tio Operation in this area is limited by RDS(on). n( Ta = 25 °C ) Ta=25°C Single pulse When mounted on ceramic substrate (900mm2✕0.8mm) 0.01 0.1 2 3 5 7 1.0 2 3 5 7 10 2 Drain to Source Voltage, VDS -- V 3 5 7 100 IT13798 When mounted on ceramic substrate (900mm2✕0.8mm) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT13788 No. A1243-4/6 CPH6444 Outline Drawing CPH6444-TL-W Land Pattern Example Mass (g) Unit 0.015 mm * For reference Unit: mm 2.4 1.4 0.6 0.95 0.95 No. A1243-5/6 CPH6444 Note on usage : Since the CPH6444 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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