CPH6347 Ordering number : ENA1334A SANYO Semiconductors DATA SHEET CPH6347 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • 1.8V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Symbol Conditions Ratings VDSS VGSS ID IDP Channel Temperature PD Tch Storage Temperature Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) Unit --20 V ±12 V --6 A --24 A 1.6 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings min typ max Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS ID=--1mA, VGS=0V VDS=--20V, VGS=0V Gate-to-Source Leakage Current IGSS VGS=±8V, VDS=0V Cutoff Voltage VGS(off) Forward Transfer Admittance | yfs | VDS=--10V, ID=--1mA VDS=--10V, ID=--3A RDS(on)1 RDS(on)2 ID=--3A, VGS=--4.5V ID=--1.5A, VGS=--2.5V 30 39 mΩ Static Drain-to-Source On-State Resistance 44 66 mΩ RDS(on)3 ID=--0.6A, VGS=--1.8V 68 102 mΩ Marking : YZ --20 Unit V --0.4 4.3 --1 μA ±10 μA --1.4 7.3 V S Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. 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To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. http://semicon.sanyo.com/en/network N1611 TKIM TC-00002674/42809PE MSIM TC-00001928 No. A1334-1/4 CPH6347 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz Turn-ON Delay Time td(on) See specified Test Circuit. 10 ns Rise Time tr td(off) See specified Test Circuit. 48 ns ns Turn-OFF Delay Time Fall Time Total Gate Charge 860 pF 170 pF 130 pF See specified Test Circuit. 100 tf Qg See specified Test Circuit. 78 ns VDS=--10V, VGS=--4.5V, ID=--6A 10.5 nC 2.0 nC Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--4.5V, ID=--6A VDS=--10V, VGS=--4.5V, ID=--6A Diode Forward Voltage VSD IS=--6A, VGS=0V Package Dimensions 3.0 --0.82 nC --1.5 V Switching Time Test Circuit unit : mm (typ) 7018A-003 0.15 5 VDD= --10V VIN 4 0.05 1.6 2.8 ID= --3A RL=3.3Ω VOUT VIN 0.2 0.6 2.9 6 0V --4.5V D PW=10μs D.C.≤1% 2 0.95 3 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain 0.4 0.9 0.2 0.6 G 1 P.G 50Ω S CPH6347 SANYO : CPH6 ID -- VDS --5 VDS= --10V --6 Drain Current, ID -- A --4 --3 --1.5V --4 --3 --2 --1 VGS= --1.2V 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V --0.9 --1.0 IT14640 0 0 --0.5 --1.0 --25 °C 25 ° --1 75 °C C --2 --5 Ta = Drain Current, ID -- A --6 ID -- VGS --7 --3.5 V --2. 5V --1 .8V --8.0V --4.5V --7 --1.5 --2.0 Gate-to-Source Voltage, VGS -- V --2.5 IT14641 No. A1334-2/4 CPH6347 RDS(on) -- VGS Ta=25°C 180 ID= --0.6A --1.5A 140 --3.0A 120 100 80 60 40 20 0 0 --1 --2 --3 --4 --5 --6 --7 --8 --9 Gate-to-Source Voltage, VGS -- V 10 --40 --20 0 °C 3 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 80 100 120 140 5 7 --10 IT14644 3 2 --0.1 7 5 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 Diode Forward Voltage, VSD -- V IT14645 Ciss, Coss, Crss -- VDS 3 VDD= --10V VGS= --4.5V 160 IT14643 --1.0 7 5 --0.01 SW Time -- ID 2 60 VGS=0V 2 2 40 IS -- VSD 3 0.1 7 --0.01 20 --10 7 5 7 5 3 f=1MHz 2 td(off) Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 20 Ambient Temperature, Ta -- °C Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 1.0 25 A --3.0 , I D= --4.5V = S VG 30 3 2 A --1.5 = V, I D --2.5 = VGS 40 2 Drain Current, ID -- A 100 tf 7 5 3 tr 2 1000 7 --0.1 2 3 5 7 --1.0 5 3 2 2 3 5 7 7 --10 IT14646 5 VDS= --10V ID= --6A 3 2 Drain Current, ID -- A --3.5 --3.0 --2.5 --2.0 --1.5 --10 7 5 3 2 4 6 8 Total Gate Charge, Qg -- nC 10 12 IT14648 --6 --8 --10 --12 --14 --16 --18 --20 IT14647 ASO IDP= --24A ID= --6A PW≤10μs 10 1m 0μs s 10 DC ms 10 0m op s era tio 3 2 --0.5 2 --4 --1.0 7 5 --0.1 7 5 0 --2 3 2 --1.0 0 0 Drain-to-Source Voltage, VDS -- V VGS -- Qg --4.0 Coss Crss 100 Drain Current, ID -- A --4.5 Ciss 7 td(on) 10 Gate-to-Source Voltage, VGS -- V 50 7 5 °C -25 =a T °C 75 = --0 V, I D --1.8 60 10 3 = VGS 70 0 --60 --10 VDS= --10V 2 .6A 80 IT14642 | yfs | -- ID 3 90 Ta=75 °C 25°C --25°C 160 RDS(on) -- Ta 100 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 200 n( Ta =2 5° C) Operation in this area is limited by RDS(on). Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 IT14649 No. A1334-3/4 CPH6347 PD -- Ta Allowable Power Dissipation, PD -- W 2.0 When mounted on ceramic substrate (900mm2×0.8mm) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT14650 Note on usage : Since the CPH6347 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of November, 2011. Specifications and information herein are subject to change without notice. PS No. A1334-4/4