CPH6341 Ordering number : ENA1084A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET CPH6341 General-Purpose Switching Device Applications Features • • • • Low ON-resistance High-speed switching 4V drive Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Allowable Power Dissipation Channel Temperature PD Tch Storage Temperature Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) Unit --30 V ±20 V --5 A --20 A 1.6 W 150 °C --55 to +150 °C Package Dimensions Product & Package Information unit : mm (typ) 7018A-003 • Package : CPH6 • JEITA, JEDEC : SC-74, SOT-26, SOT-457 • Minimum Packing Quantity : 3,000 pcs./reel 4 Packing Type: TL Marking 0.9 1 2 0.95 LOT No. YT 0.05 1.6 0.2 0.6 2.8 0.2 0.6 5 CPH6341-TL-E 0.15 2.9 6 TL 3 0.4 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain Electrical Connection 1, 2, 5, 6 SANYO : CPH6 3 4 http://semicon.sanyo.com/en/network 61312 TKIM/30508PE TIIM TC-00001220 No. A1084-1/7 CPH6341 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions ID=--1mA, VGS=0V VDS=--30V, VGS=0V Ratings min typ Unit max --30 V Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) VGS=±16V, VDS=0V VDS=--10V, ID=--1mA Forward Transfer Admittance | yfs | VDS=--10V, ID=--3A RDS(on)1 ID=--3A, VGS=--10V 45 59 mΩ RDS(on)2 ID=--1.5A, VGS=--4.5V 71 100 mΩ RDS(on)3 ID=--1.5 A, VGS=--4V 82 115 mΩ Static Drain-to-Source On-State Resistance Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time --1.2 2.8 μA ±10 μA --2.6 4.8 V S 430 pF 105 pF Crss 75 pF td(on) 7.5 ns tr td(off) 26 ns 45 ns VDS=--10V, f=1MHz See specified Test Circuit. tf Qg Total Gate Charge --1 Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=--15V, VGS=--10V, ID=--5A 35 ns 10 nC 2.0 nC 2.5 IS=--5A, VGS=0V --0.87 nC --1.2 V Switching Time Test Circuit VDD= --15V VIN 0V --10V ID= --3A RL=5Ω VIN D VOUT PW=10μs D.C.≤1% G CPH6341 P.G 50Ω S Ordering Information Device CPH6341-TL-E Package Shipping memo CPH6 3,000pcs./reel Pb Free No. A1084-2/7 CPH6341 ID -- VDS 5V --3.0 --3.0V --2.5 --2.0 --1.5 --1.0 --3 --2 --1 VGS= --2.5V --0.5 --4 Ta= 7 --3.5 5°C Drain Current, ID -- A --5 0 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 Drain-to-Source Voltage, VDS -- V 0 --1.0 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 Gate-to-Source Voltage, VGS -- V IT13379 RDS(on) -- VGS 160 --0.5 25° --2 C 5°C 0V VDS= --10V --16.0 --4.0 ID -- VGS --6 . --3 --4 . V --10.0V --4.5 Drain Current, ID -- A --6.0 V --4. 5V --5.0 --4.0 IT13380 RDS(on) -- Ta 160 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 120 100 ID= --1.5A --3.0A 80 60 40 20 0 0 --2 --4 --6 --8 --10 --12 --14 Gate-to-Source Voltage, VGS -- V 7 C 5° 1.0 °C 75 °C 25 7 5 3 0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 20 --40 --20 0 20 40 60 80 100 120 140 160 IT13382 IS -- VSD VGS=0V 3 2 --1.0 7 5 3 2 --0.1 7 5 --0.01 --0.2 5 7 --10 IT13383 Drain Current, ID -- A --0.4 --0.6 --0.8 --1.0 Diode Forward Voltage, VSD -- V SW Time -- ID 2 --1.2 IT13384 Ciss, Coss, Crss -- VDS 1000 VDD= --15V VGS= --10V f=1MHz 7 5 7 td(off) 5 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 40 3 2 2 100 60 --10 7 5 5 -2 =Ta 80 Ambient Temperature, Ta -- °C | yfs | -- ID 2 .5A = --1 I D , .0V A = --4 --1.5 VGS I D= , V .5 = --4 0A VGS = --3. V, I D 0 1 -= VGS 100 IT13381 VDS= --10V 3 120 0 --60 --16 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 10 140 --25° C 140 Ta=7 5°C 25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C tf 3 2 tr 10 td(on) 7 Ciss 3 2 Coss 100 Crss 7 5 5 3 2 --0.1 3 2 3 5 7 --1.0 2 Drain Current, ID -- A 3 5 7 --10 IT13385 0 --5 --10 --15 --20 --25 Drain-to-Source Voltage, VDS -- V --30 IT13386 No. A1084-3/7 CPH6341 VGS -- Qg --10 3 2 --8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --9 --7 --6 --5 --4 --3 3 2 3 2 2 3 4 5 6 7 8 Total Gate Charge, Qg -- nC 9 10 IT13387 PW≤10μs 10 ID= --5A 0μ s 1m s 10 DC --1.0 7 5 --1 1 IDP= --20A 3 2 --0.1 7 5 0 ms 10 0m s op er Operation in this area is limited by RDS(on). ati on Ta=25°C Single pulse When mounted on ceramic substrate (900mm2✕0.8mm) --0.01 --0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 5 7 IT13388 PD -- Ta 2.0 Allowable Power Dissipation, PD -- W --10 7 5 --2 0 ASO 5 VDS= --15V ID= --5A When mounted on ceramic substrate (900mm2✕0.8mm) 1.6 1.5 1.0 0.5 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT13389 No. A1084-4/7 CPH6341 Embossed Taping Specification CPH6341-TL-E No. A1084-5/7 CPH6341 Outline Drawing CPH6341-TL-E Land Pattern Example Mass (g) Unit 0.015 mm * For reference Unit: mm 2.4 1.4 0.6 0.95 0.95 No. A1084-6/7 CPH6341 Note on usage : Since the CPH6341 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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