VEC2415 Ordering number : ENA1713 SANYO Semiconductors DATA SHEET VEC2415 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Composite type facilitating high-density mounting. 4V drive. Mounting high 0.75mm. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Symbol Conditions Ratings VDSS VGSS Unit 60 ID IDP V ±20 V 3 A PW≤10μs, duty cycle≤1% 12 A When mounted on ceramic substrate (900mm2×0.8mm) 1unit 0.9 W Total Dissipation PD PT 1.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C When mounted on ceramic substrate (900mm2×0.8mm) Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS ID=1mA, VGS=0V VDS=60V, VGS=0V Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0V Cutoff Voltage VGS(off) Forward Transfer Admittance | yfs | VDS=10V, ID=1mA VDS=10V, ID=1.5A Marking : UN Ratings min typ Unit max 60 V 1.2 1 μA ±10 μA 2.6 2.6 V S Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. http://semicon.sanyo.com/en/network 51910PA TK IM TC-00002293 No. A1713-1/4 VEC2415 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max RDS(on)1 ID=1.5A, VGS=10V 62 80 mΩ RDS(on)2 ID=0.75A, VGS=4.5V 76 106 mΩ RDS(on)3 ID=0.75A, VGS=4V 83 116 mΩ Input Capacitance Ciss VDS=20V, f=1MHz 505 pF Output Capacitance Coss VDS=20V, f=1MHz 57 pF Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 37 pF Turn-ON Delay Time td(on) See specified Test Circuit. 7.3 ns Rise Time tr See specified Test Circuit. 7.5 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 41 ns Fall Time tf See specified Test Circuit. 22 ns Total Gate Charge Qg VDS=30V, VGS=10V, ID=3A 10 nC 1.6 nC 2.1 nC Static Drain-to-Source On-State Resistance Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd VDS=30V, VGS=10V, ID=3A VDS=30V, VGS=10V, ID=3A Diode Forward Voltage VSD IS=3A, VGS=0V Package Dimensions 0.25 8 7 6 5 1 2 3 4 0.15 6 5 2.3 0.25 2.8 0.3 7 1 2 3 1.2 V Electrical Connection unit : mm (typ) 7012-002 8 0.81 4 0.65 0.75 2.9 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 Top view 0.07 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : VEC8 Switching Time Test Circuit 10V 0V VDD=30V VIN ID=1.5A RL=20Ω VIN D PW=10μs D.C.≤1% VOUT G VEC2415 P.G 50Ω S No. A1713-2/4 VEC2415 ID -- VDS 3.5 V 5.0 1.0 VGS=2.5V 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.5A 110 100 90 80 70 60 50 40 30 0 2 4 6 8 10 12 14 Gate-to-Source Voltage, VGS -- V 5 16 Source Current, IS -- A °C 25 5 3 2 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A SW Time -- ID 7 5 120 4.0 IT13790 A .75 110 =0 , ID .0V 100 A .75 =0 ID , .5A .5V =1 =4 ID , S V VG 0.0 =1 S VG =4 V GS 90 80 70 60 50 40 --40 --20 0 20 40 60 80 100 120 140 160 IT15538 IS -- VSD VGS=0V 3 2 1.0 7 5 3 2 0.1 7 5 VDD=30V VGS=10V Ciss, Coss, Crss -- pF td(on) tr 0.8 1.0 1.2 IT13794 Ciss, Coss, Crss -- VDS f=1MHz Ciss 5 10 5 0.6 7 tf 7 0.4 Diode Forward Voltage, VSD -- V 1000 td(off) 2 0.01 0.2 5 7 10 IT13793 3 3 2 100 7 Coss 5 Crss 3 2 3 2 0.1 3.5 3 2 0.1 7 0.01 3.0 130 10 7 5 2 7 2.5 Ambient Temperature, Ta -- °C 3 1.0 2.0 140 30 20 --60 VDS=10V °C -25 = Ta °C 75 1.5 RDS(on) -- Ta IT15537 | yfs | -- ID 7 1.0 150 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 120 0.5 160 140 ID=0.75A 0 Gate-to-Source Voltage, VGS -- V Ta=25°C 150 130 0 1.0 IT13789 RDS(on) -- VGS 160 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 1.5 Ta=7 5°C 25° C --25 °C 0 170 Forward Transfer Admittance, | yfs | -- S 2.0 0.5 Drain-to-Source Voltage, VDS -- V Switching Time, SW Time -- ns 2.5 1.0 0.5 0 3.0 °C 1.5 3.5 25°C 2.0 4.0 Ta= 7 2.5 4.5 5°C 3.0V --25 Drain Current, ID -- A 3.0 VDS=10V 5.5 15.0 Drain Current, ID -- A 3.5 ID -- VGS 6.0 4 .5 V 10.0V 4.0 V 4 .0V 7.0V 4.5 2 3 5 7 1.0 2 Drain Current, ID -- A 3 5 7 IT13795 10 0 10 20 30 40 50 Drain-to-Source Voltage, VDS -- V 60 IT13796 No. A1713-3/4 VEC2415 VGS -- Qg 10 9 10 7 5 7 6 4 3 2 1 3 2 0 1 2 3 4 5 6 7 8 Total Gate Charge, Qg -- nC 10 IT13797 PD -- Ta 1.2 Allowable Power Dissipation, PD -- W 9 m op er s ati on 3 2 10 1m 0μs s 10 DC 1.0 7 5 0.1 7 5 0 ID=3A s 5 3 2 IDP=12A (PW≤10μs) 0m Drain Current, ID -- A 8 ASO 10 Gate-to-Source Voltage, VGS -- V 3 2 VDS=30V ID=3A (T a= 25 °C Operation in this area is limited by RDS(on). ) Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) 1unit 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain-to-Source Voltage, VDS -- V 5 7 100 IT15519 When mounted on ceramic substrate (900mm2×0.8mm) 1.0 0.9 0.8 To t al Di 0.6 ss 1u ni ip ati on t 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT15520 Note on usage : Since the VEC2415 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of May, 2010. Specifications and information herein are subject to change without notice. PS No. A1713-4/4