CPH6337 Ordering number : ENA0923A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET CPH6337 General-Purpose Switching Device Applications Features • • Ultrahigh-speed switching 1.8V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) Unit --12 V ±10 V Allowable Power Dissipation ID IDP PD 1.6 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Drain Current (Pulse) PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (1200mm2×0.8mm) --3.5 A --14 A This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Package Dimensions Product & Package Information unit : mm (typ) 7018A-003 • Package : CPH6 • JEITA, JEDEC : SC-74, SOT-26, SOT-457 • Minimum Packing Quantity : 3,000 pcs./reel 5 Packing Type: TL 4 Marking 0.9 YP 1 2 0.95 3 LOT No. 0.05 1.6 0.2 0.6 2.8 0.2 0.6 6 CPH6337-TL-E 0.15 2.9 TL 0.4 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain Electrical Connection 1, 2, 5, 6 SANYO : CPH6 3 4 http://semicon.sanyo.com/en/network 61312 TKIM/91907PE TIIM TC-00000903 No. A0923-1/7 CPH6337 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Conditions ID=--1mA, VGS=0V VDS=--12V, VGS=0V Ratings min typ Unit max --12 V --10 μA ±10 μA Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) VGS=±8V, VDS=0V VDS=--6V, ID=--1mA --0.4 Forward Transfer Admittance | yfs | VDS=--6V, ID=--1.5A 2.7 RDS(on)1 ID=--1.5A, VGS=--4.5V 54 70 mΩ RDS(on)2 ID=--0.8A, VGS=--2.5V 80 115 mΩ RDS(on)3 ID=--0.3A, VGS=--1.8V 125 215 mΩ Static Drain-to-Source On-State Resistance Input Capacitance Ciss Output Capacitance Coss VDS=--6V, f=1MHz --1.4 4.5 V S 405 pF 145 pF Reverse Transfer Capacitance Crss 100 pF Turn-ON Delay Time td(on) tr 8.8 ns 80 ns Rise Time Turn-OFF Delay Time Fall Time td(off) tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD See specified Test Circuit. VDS=--6V, VGS=--4.5V, ID=--3.5A 41 ns 50 ns 5.6 nC 0.7 nC 1.6 IS=--3.5A, VGS=0V --0.86 nC --1.5 V Switching Time Test Circuit VDD= --6V VIN 0V --4.5V ID= --1.5A RL=4Ω VIN D VOUT PW=10μs D.C.≤1% G CPH6337 P.G 50Ω S Ordering Information Device CPH6337-TL-E Package Shipping memo CPH6 3,000pcs./reel Pb Free No. A0923-2/7 CPH6337 ID -- VDS ID -- VGS --4 VDS= --6V .5V V GS= --1 --2 --1 25°C --1 --3 --25°C --2 Ta=75 °C Drain Current, ID -- A --1 .8 V --3.0 V --4.5 V --2.5 V --5.0V --6.0V Drain Current, ID -- A --3 0 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 Drain-to-Source Voltage, VDS -- V --1.0 0 --1.0 --1.5 --2.0 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 300 --0.5 IT12598 --2.5 IT12599 RDS(on) -- Ta 200 Ta=25°C 250 3A = --0. 8V, I D . 1 -= VGS 150 --0.8A 200 --1.5A 150 A = --0.8 V, I D 100 ID= --0.3A --2.5 V GS= = --1.5A 4.5V, I D 100 V GS= -50 50 0 --4 --6 Gate-to-Source Voltage, VGS -- V °C -25 =a °C T 75 2 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S --10 7 5 3 2 5 3 °C 25 1.0 7 5 2 0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Drain Current, ID -- A 3 5 0 20 40 60 80 100 120 --1.0 7 5 3 2 --0.1 7 5 3 2 0 7 --0.2 --0.4 --0.6 --0.8 --1.0 Diode Forward Voltage, VSD -- V SW Time -- ID 160 IT12601 IS -- VSD IT12602 --1.2 IT12603 Ciss, Coss, Crss -- VDS 1000 VDD= --6V VGS= --4.5V 140 VGS=0V --0.01 7 5 3 2 3 7 5 --20 Ambient Temperature, Ta -- °C VDS= --6V 7 --40 IT12600 | yfs | -- ID 10 f=1MHz 7 2 5 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 0 --60 --8 5°C 25°C --25° C --2 Ta= 7 0 100 7 5 td(off) tf 3 2 tr 10 td(on) Ciss 3 2 Coss Crss 100 7 5 7 3 2 --0.01 5 2 3 5 7 --0.1 2 3 5 7 --1.0 Drain Current, ID -- A 2 3 5 7 IT12604 0 --2 --4 --6 --8 --10 Drain-to-Source Voltage, VDS -- V --12 IT12605 No. A0923-3/7 CPH6337 VGS -- Qg 3 2 VDS= --6V ID= --3.5A --4.0 --10 7 5 --3.5 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --4.5 --3.0 --2.5 --2.0 --1.5 3 2 2 3 4 5 Total Gate Charge, Qg -- nC IT12866 PD -- Ta 1.8 Allowable Power Dissipation, PD -- W 6 --0.01 --0.01 s 10 DC ms 10 0m op s era tio n( Ta = 3 2 --0.5 1 1m ID= --3.5A --1.0 7 5 --0.1 7 5 0 IDP= --14A 3 2 --1.0 0 ASO 25 °C ) Operation in this area is limited by RDS(on). 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 IT12871 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT12872 No. A0923-4/7 CPH6337 Embossed Taping Specification CPH6337-TL-E No. A0923-5/7 CPH6337 Outline Drawing CPH6337-TL-E Land Pattern Example Mass (g) Unit 0.015 mm * For reference Unit: mm 2.4 1.4 0.6 0.95 0.95 No. A0923-6/7 CPH6337 Note on usage : Since the CPH6337 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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