AMS 2N7002 N-CHANNEL ENHANCEMENT MODE 3 DESCRIPTION The AMS 2N7002 has been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. The product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications 2 1 SOT-23-3 FEATURES * High Density Cell Design for Low RDS(ON). * Voltage Controlled Small Signal Switch * Rugged and Reliable * High Saturation Current Capability SYMBOL 3.Drain 2.Gate 1.Source ORDERING INFORMATION Ordering Number Package 2N7002G-AE2-R SOT-23-3 1 S 2 G Pin Assignment 3 4 5 D - 2N7002G-AE2-R (1)PackingType (1)R:Tape Reel (2)Package Type (2)AE2:SOT-23-3 (3)Halogen Free (3)G:HalogenFree MARKING 3PG 7002k SOT-23-3 SOT-23-3 1 Advanced Monolithic Systems http://www.ams-semitech.com 6 - Packing Tape Reel AMS 2N7002 ABSOLUTE MAXIMUM RATINGS (Ta=25°C unless otherwise noted.) PARAMETER Drain-Source Voltage Drain-Gate Voltage (RGS ≤1MΩ) Continuous Gate Source Voltage Non Repetitive(tp<50μs) Continuous Drain Current Pulsed Power Dissipation Derated Above 25°C Junction Temperature Storage Temperature SYMBOL VDSS VDGR VGSS ID PD TJ TSTG RATINGS 60 60 ±20 ±40 300 800 200 1.6 + 150 -55 ~ +150 UNIT V V V mA mW mW/°C °C °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL CHARACTERISTICS PARAMETER SYMBOL θJA Junction to Ambient ELECTRICAL CHARACTERISTICS PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current RATINGS 625 (TA=25°C, unless otherwise specified) SYMBOL TEST CONDITIONS MIN BVDSS IDSS IGSSF IGSSR VGS=0V, ID=10μA VDS=60V, VGS =0V VGS =20V, VDS=0V VGS =-20V, VDS=0V 60 ON CHARACTERISTICS (Note) Gate Threshold Voltage VGS(TH) 1 Drain-Source On-Voltage VDS (ON) VGS = VDS, ID=250μA VGS = 10V, ID=500mA VGS = 5.0V, ID=50mA VGS=10V,VDS≥2VDS(ON) VGS =10V, ID=500mA VGS =5.0V, ID=50mA Gate-Source Leakage Current On-State Drain Current ID(ON) Static Drain-Source On-Resistance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS (ON) CISS COSS CRSS TYP 500 VDS=25V,VGS=0V,f=1.0MHz 2 http://www.ams-semitech.com V μA nA nA 2.1 0.6 0.09 2700 1.2 1.7 2.5 3.75 1.5 3.5 7.5 mA Ω Ω 20 11 4 50 25 5 pF pF pF 20 nS 20 nS 1.5 V 0.8 A 115 mA tON Advanced Monolithic Systems MAX UNIT 1 100 -100 VDD=30V, RL=150Ω ID=200mA, VGS =10V RGEN =25Ω VDD=30V, RL=25Ω ID=200mA, VGS=10V Turn-Off Time tOFF RGEN =25Ω DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS=0V, Is=115mA (Note ) Maximum Pulsed Drain-Source Diode ISM Forward Current Maximum Continuous Drain-Source Is Diode Forward Current Note: Pulse Test: Pulse Width≤300μs, Duty Cycle≤2.0% Turn-On Time UNIT °C/W 0.88 V V AMS 2N7002 TEST CIRCUIT AND WAVEFORM VDD RL VIN VOUT D VGS R GEN DUT G S Figure 1 t on t off t d (off) tr t d (on) 90% Output , Vout tf 90% 10% 10% Inverted 90% Input , Vin 50% 50% 10% Pulse Width Figure 2. Switching Waveforms 3 Advanced Monolithic Systems http://www.ams-semitech.com AMS 2N7002 TYPICAL CHARACTERISTICS On-Resistance Varisation with Gate Voltage and Drain Current On-Resistance Characteristics 9.0V Drain-Source Current, ID (A) VGS=10V 3 8.0V 7.0V VGS=4.0V 4.5V 1.5 6.0V 1 5.0V 0.5 2.5 Normalized Drain-Source ON-Resistance, RDS (ON) 2 4.0V 2 3 4 1 Drain-Source Voltage, VDS(V) 0 6.0V 2 7.0V 8.0V 1.5 9.0V 10V 1 3.0V 0 5.0V 0.5 0 5 1.6 2 On-Resistance Varisation with Drain Current and Temperature 3 2 1.75 Normalized Drain-Source ONResistance, RDS (ON) VGS=10V ID=500mA 1.5 1.25 1 0.75 VGS =10V 2.5 TJ =125℃ 2 1.5 25℃ 1 0.5 0 0.5 -50 - 25 0 25 50 75 100 125 150 0.4 0 25℃ 1.1 Normalized Gate-Source Threshold Voltage, VGS(TH) VDS=10V 1.6 2 Gate Threshold Varisation with Temperature Transfer Characteristics 2 1.2 0.8 Drain Current,ID (A) Junction Temperature, TJ (°C) 125℃ 1.6 Drain Current, ID (A) 1.2 0.8 Drain Current, ID (A) On-Resistance Varisation with Temperature Normalized Drain-Source ON- Resistance, RDS(ON) 0.4 1.8 1.2 0.4 0 VGS = VDS ID = 1mA 1.05 1 0.95 0.9 0.85 0.8 0 2 4 6 8 10 -50 Gate to Source Voltage, VGS (V) -25 0 25 75 100 125 150 Junction Temperature, TJ (°C) 4 Advanced Monolithic Systems 50 http://www.ams-semitech.com AMS 2N7002 TYPICAL CHARACTERICS (Cont.) Body Diode Forward Voltage Varisation with Temperature Breakdown Voltage Varisation with Temperature 2 ID = 250μA VGS=0V 1 1.075 Reverse Drain Current, IS (A) Normalized Drain-Source Breakdown Voltage, BVDSS 1.1 1.05 1.025 1 0.975 0.95 0.5 TJ =125℃ 25℃ 0.1 0.05 0.01 0.005 0.001 0.925 -50 -25 0 25 50 75 0.2 100 125 150 0.4 0.6 1 1.2 Body Diode Forward Voltage, VSD (V) Drain Current, ID (A) Normalized Effective Transient Thermal Resistance, r (t) Capacitance (pF) Gate-Source Voltage, VGS (V) Junction Temperature, TJ (°C) 5 Advanced Monolithic Systems 0.8 http://www.ams-semitech.com 1.4 AMS 2N7002 Disclaimer: • AMS reserves the right to make changes to the information herein for the improvement of the design and performance without further notice! Customers should obtain the latest relevant information before placing orders and should verify that such information is complete and current. • All semiconductor products malfunction or fail with some probability under special conditions. When using AMS products in system design or complete machine manufacturing, it is the responsibility of the buyer to comply with the safety standards strictly and take essential measures to avoid situations in which a malfunction or failure of such AMS products could cause loss of body injury or damage to property. • AMS will supply the best possible product for customers! 6 Advanced Monolithic Systems http://www.ams-semitech.com