Freescale Semiconductor Technical Data Document Number: MRF6V2150N Rev. 4, 4/2010 RF Power Field--Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed primarily for CW large--signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications. • Typical CW Performance at 220 MHz: VDD = 50 Volts, IDQ = 450 mA, Pout = 150 Watts Power Gain — 25 dB Drain Efficiency — 68.3% MRF6V2150NR1 MRF6V2150NBR1 10--450 MHz, 150 W, 50 V LATERAL N--CHANNEL SINGLE--ENDED BROADBAND RF POWER MOSFETs • Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 150 Watts CW Output Power Features • Characterized with Series Equivalent Large--Signal Impedance Parameters • Qualified Up to a Maximum of 50 VDD Operation CASE 1486--03, STYLE 1 TO--270 WB--4 PLASTIC MRF6V2150NR1 • Integrated ESD Protection • 225°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. CASE 1484--04, STYLE 1 TO--272 WB--4 PLASTIC MRF6V2150NBR1 PARTS ARE SINGLE--ENDED Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS -- 0.5, +110 Vdc Gate--Source Voltage VGS -- 0.5, + 12 Vdc Storage Temperature Range Tstg -- 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature (1,2) TJ 225 °C Thermal Resistance, Junction to Case Case Temperature 80°C, 150 W CW RFout/VDS RFin/VGS RFout/VDS (Top View) Table 2. Thermal Characteristics Characteristic RFin/VGS Symbol Value (2,3) Unit Note: Exposed backside of the package is the source terminal for the transistor. RθJC 0.24 °C/W Figure 1. Pin Connections Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2 (Minimum) Machine Model (per EIA/JESD22--A115) A (Minimum) Charge Device Model (per JESD22--C101) IV (Minimum) 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. © Freescale Semiconductor, Inc., 2007--2008, 2010. All rights reserved. RF Device Data Freescale Semiconductor MRF6V2150NR1 MRF6V2150NBR1 1 Table 4. Moisture Sensitivity Level Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating Package Peak Temperature Unit 3 260 °C Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 100 Vdc, VGS = 0 Vdc) IDSS — — 2.5 mA Zero Gate Voltage Drain Leakage Current (VDS = 50 Vdc, VGS = 0 Vdc) IDSS — — 50 μAdc V(BR)DSS 110 — — Vdc IGSS — — 10 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 400 μAdc) VGS(th) 1 1.62 3 Vdc Gate Quiescent Voltage (VDD = 50 Vdc, ID = 450 mAdc, Measured in Functional Test) VGS(Q) 1.5 2.6 3.5 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 1 Adc) VDS(on) — 0.26 — Vdc Reverse Transfer Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 1.6 — pF Output Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 93 — pF Input Capacitance (VDS = 50 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz) Ciss — 163 — pF Characteristic Off Characteristics Drain--Source Breakdown Voltage (ID = 75 mA, VGS = 0 Vdc) Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Dynamic Characteristics Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 450 mA, Pout = 150 W, f = 220 MHz, CW Power Gain Gps 23.5 25 26.5 dB Drain Efficiency ηD 66 68.3 — % Input Return Loss IRL — --17 --9 dB Typical Performances (In Freescale 27 MHz and 450 MHz Test Fixtures, 50 ohm system) VDD = 50 Vdc, IDQ = 450 mA, Pout = 150 W CW Power Gain f = 27 MHz f = 450 MHz Gps — — 32.3 22.9 — — dB Drain Efficiency f = 27 MHz f = 450 MHz ηD — — 78.7 57.6 — — % Input Return Loss f = 27 MHz f = 450 MHz IRL — — --10.6 --17.6 — — dB ATTENTION: The MRF6V2150N and MRF6V2150NB are high power devices and special considerations must be followed in board design and mounting. Incorrect mounting can lead to internal temperatures which exceed the maximum allowable operating junction temperature. Refer to Freescale Application Note AN3263 (for bolt down mounting) or AN1907 (for solder reflow mounting) PRIOR TO STARTING SYSTEM DESIGN to ensure proper mounting of these devices. MRF6V2150NR1 MRF6V2150NBR1 2 RF Device Data Freescale Semiconductor B3 B1 VBIAS + + + C1 C2 C3 C17 L2 C4 C5 C6 C8 Z1 C9 C10 C11 R2 Z2 Z3 Z4 L3 Z5 Z7 C19 C14 Z8 C15 C20 C16 Z10 Z9 Z11 RF OUTPUT C23 Z6 C21 C12 C22 DUT C13 Z1 Z2 Z3 Z4 Z5 Z6, Z7 C18 B2 R1 C7 L1 RF INPUT VSUPPLY + 0.352″ x 0.082″ Microstrip 0.944″ x 0.082″ Microstrip 1.480″ x 0.082″ Microstrip 0.276″ x 0.220″ Microstrip 0.434″ x 0.220″ Microstrip 0.298″ x 0.630″ Microstrip Z8 Z9 Z10 Z11 PCB 0.443″ x 0.170″ Microstrip 2.360″ x 0.170″ Microstrip 0.502″ x 0.170″ Microstrip 0.443″ x 0.082″ Microstrip Arlon CuClad 250GX--0300--55--22, 0.030″, εr = 2.55 Figure 2. MRF6V2150NR1(NBR1) Test Circuit Schematic — 220 MHz Table 6. MRF6V2150NR1(NBR1) Test Circuit Component Designations and Values — 220 MHz Part Description Part Number Manufacturer B1, B2 95 Ω, 100 MHz Long Ferrite Beads, Surface Mount 2743021447 Fair--Rite B3 47 Ω, 100 MHz Short Ferrite Bead, Surface Mount 2743019447 Fair--Rite C1 47 μF, 50 V Electrolytic Capacitor 476KXM063M Illinois Capacitor C2 22 μF, 35 V Tantalum Chip Capacitor T494X226K035AT Kemet C3 10 μF, 35 V Tantalum Chip Capacitor T491D106K035AT Kemet C4, C17 39 K pF Chip Capacitors ATC200B393KT50XT ATC C5, C18 22 K pF Chip Capacitors ATC200B203KT50XT ATC C6, C11, C19 0.1 μF, 50 V Chip Capacitors CDR33BX104AKYS Kemet C7, C8, C15, C16 2.2 μF, 50 V Chip Capacitors C1825C225J5RAC Kemet C9, C12, C14, C23 1000 pF Chip Capacitors ATC100B102JT50XT ATC C10 220 nF Chip Capacitor C1812C224K5RAC Kemet C13 75 pF Chip Capacitor ATC100B750JT500XT ATC C20 470 μF, 63 V Electrolytic Capacitor ESME630ELL471MK25S United Chemi--Con C21 30 pF Chip Capacitor ATC100B300JT500XT ATC C22 33 pF Chip Capacitor ATC100B330JT500XT ATC L1 4 Turn #18 AWG, 0.18″ ID None None L2 82 nH Inductor 1812SMS--82NJL Coilcraft L3 17.5 nH Inductor B06TJL Coilcraft R1 270 Ω, 1/4 W Chip Resistor CRCW12062700FKEA Vishay R2 27 Ω, 1/4 W Chip Resistor CRCW12064R75FKEA Vishay MRF6V2150NR1 MRF6V2150NBR1 RF Device Data Freescale Semiconductor 3 C2 C1 + C3 B1 B3 C4 C5 C6 C7 C18 C17 C20 R1 B2 C10 L2 C15* C16* C8 C11 C9 C12 C14 L1 L3 CUT OUT AREA R2 + C19 C23 C21 C22 C13 MRF6V2150N/NB Rev. 3 * Stacked Figure 3. MRF6V2150NR1(NBR1) Test Circuit Component Layout — 220 MHz MRF6V2150NR1 MRF6V2150NBR1 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 100 1000 100 ID, DRAIN CURRENT (AMPS) C, CAPACITANCE (pF) Ciss Coss Measured with ±30 mV(rms)ac @ 1 MHz VGS = 0 Vdc 10 Crss 10 TC = 25°C 1 1 0 10 20 40 30 100 200 100 200 10 1 50 VDS, DRAIN--SOURCE VOLTAGE (VOLTS) VDS, DRAIN--SOURCE VOLTAGE (VOLTS) Figure 4. Capacitance versus Drain--Source Voltage Figure 5. DC Safe Operating Area 27 IDQ = 675 mA 26 4 VGS = 3 V Gps, POWER GAIN (dB) ID, DRAIN CURRENT (AMPS) 5 3 2.75 V 2 2.63 V 2.5 V 1 563 mA 25 450 mA 24 337 mA 23 VDD = 50 Vdc f = 220 MHz 225 mA 22 2.25 V 0 20 60 80 100 21 120 1 10 DRAIN VOLTAGE (VOLTS) Pout, OUTPUT POWER (WATTS) CW Figure 6. DC Drain Current versus Drain Voltage Figure 7. CW Power Gain versus Output Power --10 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) 40 58 VDD = 50 Vdc, f1 = 220 MHz, f2 = 220.1 MHz Two--Tone Measurements, 100 kHz Tone Spacing --15 --20 Pout, OUTPUT POWER (dBm) 0 IDQ = 225 mA --25 --30 336 mA --35 450 mA --40 563 mA --45 685 mA --50 900 mA --55 --60 5 10 100 300 Ideal P3dB = 52.61 dBm (182.39 W) 56 P1dB = 52.27 dBm (168.66 W) 54 Actual 52 50 48 22 VDD = 50 Vdc, IDQ = 450 mA f = 220 MHz 24 26 28 30 32 Pout, OUTPUT POWER (WATTS) PEP Pin, INPUT POWER (dBm) Figure 8. Third Order Intermodulation Distortion versus Output Power Figure 9. CW Output Power versus Input Power MRF6V2150NR1 MRF6V2150NBR1 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS 26 55 45 V 40 V 20 50 V 35 V 18 30 V 25 V 16 IDQ = 450 mA f = 220 MHz VDD = 20 V 0 50 100 150 45 40 VDD = 50 Vdc IDQ = 450 mA f = 220 MHz 15 25 20 30 35 Figure 10. Power Gain versus Output Power Figure 11. Power Output versus Power Input 27 70 --30_C Gps 26 TC = --30_C 60 50 25_C 40 85_C 23 30 ηD 22 21 VDD = 50 Vdc IDQ = 450 mA f = 220 MHz 100 10 108 80 85_C 5 25_C Pin, INPUT POWER (dBm) 25_C 24 85_C Pout, OUTPUT POWER (WATTS) CW 28 25 TC = --30_C 50 35 10 200 Pout, OUTPUT POWER (WATTS) CW Figure 12. Power Gain and Drain Efficiency versus CW Output Power MTTF (HOURS) 14 Gps, POWER GAIN (dB) Pout, OUTPUT POWER (dBm) 22 ηD, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 24 107 106 20 10 200 105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 50 Vdc, Pout = 150 W CW, and ηD = 68.3%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 13. MTTF versus Junction Temperature MRF6V2150NR1 MRF6V2150NBR1 6 RF Device Data Freescale Semiconductor Zsource f = 220 MHz Zload Zo = 10 Ω f = 220 MHz VDD = 50 Vdc, IDQ = 450 mA, Pout = 150 W CW f MHz Zsource Ω Zload Ω 220 2.45 + j6.95 3.90 + j5.50 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 14. Series Equivalent Source and Load Impedance — 220 MHz MRF6V2150NR1 MRF6V2150NBR1 RF Device Data Freescale Semiconductor 7 C14 C15 C19 B1 C6 C13 C12 C11 B2 L3*, R3*, ** B3 L4*, R4*, ** C20 C10 C7 C8 C18 C17 C16 C9 L2* C4 L1 C3 C1 R1, R2 CUT OUT AREA T1 C2 C5 T2 27 MHz 272--WB Rev. 1 Figure 15. MRF6V2150NR1(NBR1) Test Circuit Component Layout — 27 MHz Table 7. MRF6V2150NR1(NBR1) Test Circuit Component Designations and Values — 27 MHz Part Description Part Number Manufacturer B1, B3 95 Ω, 100 MHz Long Ferrite Beads 2743021447 Fair--Rite B2 47 Ω, 100 MHz Short Ferrite Bead 2743019447 Fair--Rite C1, C4, C5, C16 100 pF Chip Capacitors ATC100B101JT500XT ATC C2 620 pF Chip Capacitor ATC100B621JT200XT ATC C3 1000 pF Chip Capacitor ATC100B102JT50XT ATC C6 2.2 μF, 50 V Chip Capacitor C1825C225J5RAC--TU Kemet C7 0.1 μF Chip Capacitor CDR33BX104AKYS Kemet C8 0.22 μF, 50 V Chip Capacitor C1812C224K5RAC--TU Kemet C9, C12 22K pF Chip Capacitors ATC200B223KT50XT ATC C10, C18 0.01 μF, 100 V Chip Capacitors C1825C103K1GAC--TU Kemet C11, C19 0.1 pF Chip Capacitors ATC100B0R1BT500XT ATC C13, C17 39K pF Chip Capacitors ATC200B393KT50XT ATC C14 22 μF, 35 V Tantalum Capacitor T491X226K035AT Kemet C15 10 μF, 35 V Tantalum Capacitor T491D106K035AT Kemet C20 470 μF, 63 V Electrolytic Capacitor MCGPR63V477M13X26--RH Multicomp L1 47 nH Inductor 1812SMS--47NJ Coilcraft L2* 9 Turn, #16 AWG, Inductor, Hand Wound, 0.250″ ID Copper Wire L3* 10 Turn, #16 AWG, Inductor, Hand Wound, 0.375″ ID Copper Wire L4* 9 Turn, #16 AWG, Inductor, Hand Wound, 0.375″ ID Copper Wire R1, R2 3.3 Ω, 1/2 W Chip Resistors RK73B2ETTD3R3J KOA R3*, ** 1 KΩ, 1/4 W Resistor MCCFR0W4J0102A50 Multicomp R4*, ** 510 Ω, 1/2 W Resistor MCRC1/2G511JT--RH Multicomp T1 RF600 Transformer 16:1 Impedance Ratio RF600LF--16 Comm Concepts T2 RF1000 Transformer 9:1 Impedance Ratio RF1000LF--9 Comm Concepts * Leaded components mounted over traces. ** Resistor is mounted at center of inductor coil. MRF6V2150NR1 MRF6V2150NBR1 8 RF Device Data Freescale Semiconductor C10 C9 C8 C6 C21 C20 C19 C7 B1 + B2 C22 C18 C11 C5 C2 L2 C3 C1 C13 C4 CUT OUT AREA L1 B3 L4 C16 C17 L3 C12 C15 C14 450 MHz 272--WB Rev. 1 Figure 16. MRF6V2150NR1(NBR1) Test Circuit Component Layout — 450 MHz Table 8. MRF6V2150NR1(NBR1) Test Circuit Component Designations and Values — 450 MHz Part Description Part Number Manufacturer B1, B2, B3 47 Ω, 100 MHz Short Ferrite Beads 2743019447 Fair--Rite C1 6.8 pF Chip Capacitor ATC100B6R8CT500XT ATC C2 15 pF Chip Capacitor ATC100B150JT500XT ATC C3, C5, C17, C18 240 pF Chip Capacitors ATC100B241JT200XT ATC C4 36 pF Chip Capacitor ATC100B360JT500XT ATC C6, C21 0.1 μF, 50 V Chip Capacitors CDR33BX104AKYS Kemet C7, C20 10K pF Chip Capacitors ATC200B103KT50XT ATC C8, C19 22K pF Chip Capacitors ATC200B223KT50XT ATC C9 10 μF, 35 V Tantalum Capacitor T491D106K035AS Kemet C10 22 μF, 35 V Tantalum Capacitor T491X226K035AS Kemet C11 47 μF, 50 V Electrolytic Capacitor 476KXM050M Illinois Capacitor C12 18 pF Chip Capacitor ATC100B180JT500XT ATC C13 10 pF Chip Capacitor ATC100B100JT500XT ATC C14 0.6 -- 4.5 pF Variable Capacitor 27271SL Johanson C15 3 pF Chip Capacitor ATC100B3R0CT500XT ATC C16 0.5 pF Chip Capacitor ATC100B0R5BT500XT ATC C22 470 μF, 63 V Electrolytic Capacitor MCGPR63V477M13X26--RH Multicomp L1, L2 5 nH Mini Spring Air Core Inductors A02TKLC Coilcraft L3 17.5 nH Mini Spring Air Core Inductor B06TJLC Coilcraft L4 82 nH Midi Spring Air Core Inductor 1812SMS--82NJLC Coilcraft PCB Arlon CuClad 250GX--0300--55--22, 0.030″, εr = 2.55 DS2054 DS MRF6V2150NR1 MRF6V2150NBR1 RF Device Data Freescale Semiconductor 9 f = 27 MHz Zsource Zo = 50 Ω f = 450 MHz Zsource f = 27 MHz Zload f = 450 MHz Zload VDD = 50 Vdc, IDQ = 450 mA, Pout = 150 W CW f MHz Zsource Ω Zload Ω 27 6.57 + j41.4 7.16 + j3.02 450 0.80 + j3.20 2.20 + j2.30 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 17. Series Equivalent Source and Load Impedance — 27, 450 MHz MRF6V2150NR1 MRF6V2150NBR1 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF6V2150NR1 MRF6V2150NBR1 RF Device Data Freescale Semiconductor 11 MRF6V2150NR1 MRF6V2150NBR1 12 RF Device Data Freescale Semiconductor MRF6V2150NR1 MRF6V2150NBR1 RF Device Data Freescale Semiconductor 13 MRF6V2150NR1 MRF6V2150NBR1 14 RF Device Data Freescale Semiconductor MRF6V2150NR1 MRF6V2150NBR1 RF Device Data Freescale Semiconductor 15 MRF6V2150NR1 MRF6V2150NBR1 16 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents to aid your design process. Application Notes • AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over--Molded Plastic Packages Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 Feb. 2007 • Initial Release of Data Sheet 1 May 2007 • Corrected Test Circuit Component part numbers in Table 6, Component Designations and Values for C4, C17, C5, C18, C9, C12, C14, C23, C13, C21, and C22, p. 3 2 Apr. 2008 • Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150°C, p. 1 • Corrected Ciss test condition to indicate AC stimulus on the VGS connection versus the VDS connection, Dynamic Characteristics table, p. 2 • Updated PCB information to show more specific material details, Fig. 2, Test Circuit Schematic, p. 3 • Updated Part Numbers in Table 6, Component Designations and Values, to latest RoHS compliant part numbers, p. 3 • Replaced Case Outline 1486--03, Issue C, with 1486--03, Issue D, p. 8--10. Added pin numbers 1 through 4 on Sheet 1. • Replaced Case Outline 1484--04, Issue D, with 1484--04, Issue E, p. 11--13. Added pin numbers 1 through 4 on Sheet 1, replacing Gate and Drain notations with Pin 1 and Pin 2 designations. 3 Dec. 2008 • Added Typical Performances table for 27 MHz, 450 MHz applications, p. 2 • Added Figs. 15 and 16, Test Circuit Component Layout -- 27 MHz and 450 MHz, and Tables 7 and 8, Test Circuit Component Designations and Values -- 27 MHz and 450 MHz, p. 8, 9 • Added Fig. 17, Series Equivalent Source and Load Impedance for 27 MHz, 450 MHz, p. 10 4 Apr. 2010 • Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table, related “Continuous use at maximum temperature will affect MTTF” footnote added and changed 200°C to 225°C in Capable Plastic Package bullet, p. 1 • Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software, p. 17 MRF6V2150NR1 MRF6V2150NBR1 RF Device Data Freescale Semiconductor 17 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2007--2008, 2010. All rights reserved. MRF6V2150NR1 MRF6V2150NBR1 Document Number: MRF6V2150N Rev. 4, 4/2010 18 RF Device Data Freescale Semiconductor