Composite Transistors UP04601 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) 4 ■ Features 1 5˚ 2 3 (0.50)(0.50) 1.00±0.05 1.60±0.05 (0.20) • Two elements incorporated into one package (Each transistor is separated) • Reduction of the mounting area and assembly cost by one half 0.10±0.02 5˚ 0.10 max. • 2SD0601A + 2SB0709A 0.55±0.05 Display at No.1 lead ■ Basic Part Number Parameter Tr2 Overall Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 60 V Collector-emitter voltage (Base open) VCEO 50 V Emitter-base voltage (Collector open) VEBO 7 V Collector current IC 100 mA Peak collector current ICP 200 mA Collector-base voltage (Emitter open) VCBO −60 V Collector-emitter voltage (Base open) VCEO −50 V Emitter-base voltage (Collector open) VEBO −7 V Collector current IC −100 mA Peak collector current ICP −200 mA Total power dissipation PT 125 mW 4: Emitter (Tr2) 5: Base (Tr2) 6: Collector (Tr1) SSMini6-F1 Package Marking Symbol: 5C Internal Connection 6 5 Tr1 Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C Publication date: December 2003 1: Emitter (Tr1) 2: Base (Tr1) 3: Collector (Tr2) 0 to 0.02 ■ Absolute Maximum Ratings Ta = 25°C Tr1 (0.20) 5 1.20±0.05 6 Unit: mm 0.20+0.05 –0.02 (0.30) 1.60±0.05 For general amplification SJJ00233BED 1 4 Tr2 2 3 1 UP04601 ■ Electrical Characteristics Ta = 25°C ± 3°C • Tr1 Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 60 V Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 V Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 7 V Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0 0.1 µA Collector-emitter cutoff current (Base open) ICEO VCE = 10 V, IB = 0 100 µA hFE VCE = 10 V, IC = 2 mA 390 0.3 V Forward current transfer ratio Collector-emitter saturation voltage Transition frequency VCE(sat) fT Collector output capacitance (Common base, input open circuited) Cob Conditions Min Typ 180 Max Unit IC = 100 mA, IB = 10 mA 0.1 VCB = 10 V, IE = −2 mA, f = 200 MHz 150 MHz VCB = 10 V, IE = 0, f = 1 MHz 3.5 pF • Tr2 Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0 −60 Collector-emitter voltage (Base open) VCEO IC = −2 mA, IB = 0 −50 V Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0 −7 V Collector-base cutoff current (Emitter open) ICBO VCB = −20 V, IE = 0 − 0.1 µA Collector-emitter cutoff current (Base open) ICEO VCE = −10 V, IB = 0 −100 µA hFE VCE = −10 V, IC = −5 mA 390 − 0.5 V Forward current transfer ratio Collector-emitter saturation voltage Transition frequency VCE(sat) fT Collector output capacitance (Common base, input open circuited) Cob Conditions IC = −100 mA, IB = −10 mA Min Typ Max Unit V 180 − 0.3 VCB = −10 V, IE = 1 mA, f = 200 MHz 80 MHz VCB = −10 V, IE = 0, f = 1 MHz 2.7 pF Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Common characteristics chart PT Ta Total power dissipation PT (mW) 150 125 100 75 50 25 0 0 40 80 120 160 Ambient temperature Ta (°C) 2 SJJ00233BED UP04601 Characteristics charts of Tr1 IC VCE 50 IC I B 160 IB = 160 µA Ta = 25°C VCE = 10 V Ta = 25°C 140 µA 40 VCE = 10 V Ta = 25°C 8 100 µA 30 80 µA 20 60 µA 40 µA 120 Base current IB (mA) 120 µA Collector current IC (mA) Collector current IC (mA) IB VBE 10 80 6 4 40 10 2 20 µA 0 4 8 0 12 0 Collector-emitter voltage VCE (V) Collector current IC (mA) Ta = 75°C −25°C 60 40 20 0 0.2 0.4 0.6 0.8 1.0 Base-emitter voltage VBE (V) Collector-emitter saturation voltage VCE(sat) (V) 25°C 100 0 1.2 0 10 25°C Ta = 75°C −25°C 10−2 1 10 102 Collector current IC (mA) 0.6 0.8 hFE IC 1 10−3 0.4 400 IC / IB = 10 10−1 0.2 Base-emitter voltage VBE (V) VCE(sat) IC VCE = 10 V 80 0.8 Base current IB (mA) IC VBE 120 0 0.4 Forward current transfer ratio hFE 0 103 VCE = 10 V Ta = 75°C 320 25°C 240 −25°C 160 80 0 1 10 102 103 Collector current IC (mA) Collector output capacitance C (pF) (Common base, input open circuited) ob Cob VCB 10 f = 1 MHz Ta = 25°C 1 0 10 20 30 40 Collector-base voltage VCB (V) SJJ00233BED 3 UP04601 Characteristics charts of Tr2 IC VCE IC I B −120 −160 Ta = 25°C IB VBE −4 VCE = −10 V Ta = 25°C VCE = −10 V Ta = 25°C −250 µA −200 µA −60 −150 µA −40 −100 µA −20 −50 µA −4 0 −8 −80 −40 0 −12 0 Collector-emitter voltage VCE (V) Collector current IC (mA) Ta = 75°C −25°C −60 Collector-emitter saturation voltage VCE(sat) (V) 25°C −100 −10 −20 − 0.2 − 0.4 − 0.6 − 0.8 −1.0 Base-emitter voltage VBE (V) Ta = 75°C 25°C −10−3 −1 −25°C −10 −102 Collector current IC (mA) Collector output capacitance C (pF) (Common base, input open circuited) ob 0 −10 −20 −30 −40 Collector-base voltage VCB (V) 4 SJJ00233BED − 0.4 − 0.6 − 0.8 hFE IC −1 f = 1 MHz Ta = 25°C 1 − 0.2 600 IC / IB = 10 Cob VCB 10 0 Base-emitter voltage VBE (V) −10−2 0 −1 0 −1.2 −1 −10 −40 0 −2 VCE(sat) IC VCE = −10 V −80 − 0.8 −3 Base current IB (mA) IC VBE −120 − 0.4 Forward current transfer ratio hFE 0 −120 Base current IB (mA) IB = −300 µA −80 Collector current IC (mA) Collector current IC (mA) −100 −103 VCE = −10 V 500 Ta = 75°C 400 25°C 300 −25°C 200 100 0 −10−1 −1 −10 −102 Collector current IC (mA) −103 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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