Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MRF24300N
Rev. 0, 5/2016
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
This 300 W CW transistor is designed for industrial, scientific, medical (ISM)
applications at 2450 MHz. This device is suitable for use in CW, pulse and
linear applications. This high gain, high efficiency device is targeted to replace
industrial magnetrons and will provide longer life and ease of use.
Typical Performance: In 2400–2500 MHz reference circuit, VDD = 32 Vdc
Frequency
(MHz)
Signal Type
Pin
(W)
Gps
(dB)
ηD
(%)
Pout
(W)
2450
CW
15.9
13.1
60.5
320
MRF24300N
2450 MHz, 300 W CW, 32 V
RF POWER LDMOS TRANSISTOR
Load Mismatch/Ruggedness
Frequency
(MHz)
Signal Type
VSWR
Pin
(W)
Test
Voltage
2450 (1)
CW
> 5:1
at all Phase
Angles
15.0
(2 dB
Overdrive)
32
Result
OM--780--2L
PLASTIC
No Device
Degradation
1. Measured in 2450 MHz reference circuit.
Features
•
•
•
•
•
Characterized with series equivalent large--signal impedance parameters
Internally matched for ease of use
Qualified for operation at 32 Vdc
Integrated ESD protection
Low thermal resistance
Target Applications
• Industrial heating:
– Sterilization
– Pasteurization
•
•
•
•
•
•
•
•
Industrial drying
Moisture--leveling process
Curing
Welding
Heat sealing
Microwave ablation
Renal denervation
Diathermy
© Freescale Semiconductor, Inc., 2016. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
Gate 2
1 Drain
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistor.
Figure 1. Pin Connections
MRF24300N
1
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain--Source Voltage
Rating
VDSS
–0.5, +65
Vdc
Gate--Source Voltage
VGS
–6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
– 65 to +150
°C
TC
–40 to +150
°C
Case Operating Temperature Range
Operating Junction Temperature Range
(1,2)
Total Device Dissipation @ TC = 25°C
Derate above 25°C
TJ
–40 to +225
°C
PD
833
4.17
W
W/°C
Symbol
Value (2,3)
Unit
RθJC
0.24
°C/W
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 89°C, 300 W CW, 32 Vdc, IDQ = 100 mA, 2450 MHz
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2, passes 2500 V
Machine Model (per EIA/JESD22--A115)
B, passes 250 V
Charge Device Model (per JESD22--C101)
IV, passes 2000 V
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
3
260
°C
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 32 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 303 μAdc)
VGS(th)
1.6
2.0
2.4
Vdc
Gate Quiescent Voltage
(VDD = 32 Vdc, ID = 100 mAdc, Measured in Functional Test)
VGS(Q)
—
2.5
—
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 3.7 Adc)
VDS(on)
—
0.15
0.17
Vdc
Characteristic
Off Characteristics
On Characteristics
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.nxp.com/RF/calculators.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
(continued)
MRF24300N
2
RF Device Data
Freescale Semiconductor, Inc.
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests (In Freescale Production Test Fixture, 50 ohm system) VDD = 32 Vdc, IDQ = 100 mA, Pin = 10 W Peak (1 W Avg.),
f = 2450 MHz, 100 μsec Pulse Width, 10% Duty Cycle
Output Power
Pout
260
291
330
W
Drain Efficiency
ηD
52.0
56.9
—
%
Input Return Loss
IRL
—
–18
–9
dB
Table 6. Ordering Information
Device
MRF24300NR3
Tape and Reel Information
R3 Suffix = 250 Units, 32 mm Tape Width, 13--inch Reel
Package
OM--780--2L
MRF24300N
RF Device Data
Freescale Semiconductor, Inc.
3
TYPICAL CHARACTERISTICS
108
VDD = 32 Vdc
MTTF (HOURS)
107
ID = 12.39 Amps
106
15.21 Amps
17.19 Amps
105
104
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (°C)
Note: MTTF value represents the total cumulative operating time
under indicated test conditions.
MTTF calculator available at http:/www.nxp.com/RF/calculators.
Figure 2. MTTF versus Junction Temperature -- CW
MRF24300N
4
RF Device Data
Freescale Semiconductor, Inc.
2400–2500 MHz REFERENCE CIRCUIT — 2″ × 3″ (5.1 cm × 7.6 cm)
Table 7. 2450 MHz Performance (In Freescale 2400–2500 MHz Reference Circuit, 50 ohm system)
VDD = 32 Vdc, IDQ = 100 mA, TA = 25°C
Frequency
(MHz)
Signal Type
Pin
(W)
Gps
(dB)
ηD
(%)
Pout
(W)
2450
CW
15.9
13.1
60.5
320
Table 8. Load Mismatch/Ruggedness (In Freescale Reference Circuit)
Frequency
(MHz)
Signal
Type
2450
CW
VSWR
Pin
(W)
> 5:1 at all
Phase Angles
15.0
(2 dB Overdrive)
Test Voltage, VDD
Result
32
No Device
Degradation
MRF24300N
RF Device Data
Freescale Semiconductor, Inc.
5
2400–2500 MHz REFERENCE CIRCUIT — 2″ × 3″ (5.1 cm × 7.6 cm)
C5
C6
C8
R1
C9
C7 C2
C4
Q1
C1
C3
MRF24300N
Rev. 0
D82111
Figure 3. MRF24300N Reference Circuit Component Layout — 2400–2500 MHz
Table 9. MRF24300N Reference Circuit Component Designations and Values — 2400–2500 MHz
Part
Description
Part Number
Manufacturer
C1, C2, C3, C4, C5, C6
27 pF Chip Capacitors
ATC600F270JT250XT
ATC
C7, C8, C9
10 μF Chip Capacitors
GRM32ER61H106KA12L
Murata
Q1
RF Power LDMOS Transistor
MRF24300N
NXP
R1
10 Ω, 1/4 W Chip Resistor
CRCW120610R0JNEA
Vishay
PCB
Rogers RT6035HTC, 0.030″, εr = 3.5
D82111
MTL
MRF24300N
6
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — 2400–2500 MHz REFERENCE CIRCUIT
VDD = 32 Vdc, IDQ = 100 mA
f = 2450 MHz
19
ηD
50
35
17
20
Gps
16
5
15
20
14
15
Pin, INPUT
POWER (WATTS)
Gps, POWER GAIN (dB)
18
10
13
Pin
12
11
ηD, DRAIN
EFFICIENCY (%)
65
20
20
5
0
400
100
Pout, OUTPUT POWER (WATTS)
Figure 4. Power Gain, Drain Efficiency and
Input Power versus Output Power
Gps, POWER GAIN (dB)
70
Gps
16.5 IDQ = 100 mA
f = 2450 MHz
16.0
65
60
15.5
32 V
15.0
31 V
14.5
VDD = 30 V
14.0
13.5
30 V
31 V
ηD
13.0
32 V
12.5
12.0
20
100
55
50
45
40
35
30
ηD, DRAIN EFFICIENCY (%)
17.0
25
20
400
Pout, OUTPUT POWER (WATTS)
Figure 5. Power Gain and Drain Efficiency versus
Output Power and Supply Voltage
MRF24300N
RF Device Data
Freescale Semiconductor, Inc.
7
2450 MHz NARROWBAND PRODUCTION TEST FIXTURE — 3″ × 5″ (7.6 cm × 12.7 cm)
C3
C9 C10 C11
C1 C2
C12
R1
C20
C5
C6
C7
CUT OUT AREA
C4
C8
MRF24300N
Rev. 1
C13
C14
C15
C16
D68348
C21
C17 C18 C19
Figure 6. MRF24300N Narrowband Test Circuit Component Layout — 2450 MHz
Table 10. MRF24300N Narrowband Test Circuit Component Designations and Values — 2450 MHz
Part
Description
Part Number
Manufacturer
C1, C11, C19
10 μF Chip Capacitors
C5750X7S2A106M230KB
TDK
C2, C10, C18
1 μF Chip Capacitors
C3225JB2A105K200AA
TDK
C3, C9, C17
0.1 μF Chip Capacitors
C1206C104K1RAC-TU
Kemet
C4
5.6 pF Chip Capacitor
ATC100B5R6CT500XT
ATC
C5, C15
8.2 pF Chip Capacitors
ATC100B8R2CT500XT
ATC
C6
2.7 pF Chip Capacitor
ATC100B2R7BT500XT
ATC
C7, C12, C16
3.6 pF Chip Capacitors
ATC100B3R6CT500XT
ATC
C8
2.2 pF Chip Capacitor
ATC100B2R2JT500XT
ATC
C13
0.3 pF Chip Capacitor
ATC100B0R3BT500XT
ATC
C14
1.0 pF Chip Capacitor
ATC100B1R0BT500XT
ATC
C20, C21
220 μF, 100 V Electrolytic Capacitors
MCGPR100V227M16X26-RH
Multicomp
R1
5.9 Ω, 1/4 W Chip Resistor
CRCW12065R90FKEA
Vishay
PCB
Taconic RF35, 0.030″, εr = 3.5
D68348
MTL
MRF24300N
8
RF Device Data
Freescale Semiconductor, Inc.
2X SOLDER PADS
0.800
(20.32)
0.409(1)
(10.39)
0.389(1)
(9.88)
0.540
(13.72)
Inches
(mm)
0.815(1)
(20.70)
1. Slot dimensions are minimum dimensions and exclude milling tolerances
Figure 7. PCB Pad Layout for OM--780--2L
MRF24300N
ATWLYYWWB
Figure 8. Product Marking
MRF24300N
RF Device Data
Freescale Semiconductor, Inc.
9
PACKAGE DIMENSIONS
MRF24300N
10
RF Device Data
Freescale Semiconductor, Inc.
MRF24300N
RF Device Data
Freescale Semiconductor, Inc.
11
MRF24300N
12
RF Device Data
Freescale Semiconductor, Inc.
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
• .s2p File
Development Tools
• Printed Circuit Boards
To Download Resources Specific to a Given Part Number:
1. Go to http://www.nxp.com/RF
2. Search by part number
3. Click part number link
4. Choose the desired resource from the drop down menu
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
May 2016
Description
• Initial Release of Data Sheet
MRF24300N
RF Device Data
Freescale Semiconductor, Inc.
13
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E 2016 Freescale Semiconductor, Inc.
MRF24300N
Document Number: MRF24300N
Rev. 0, 5/2016
14
RF Device Data
Freescale Semiconductor, Inc.