Ordering number : ENA0957B MCH3377 P-Channel Power MOSFET –20V, –3A, 83mΩ, Single MCPH3 http://onsemi.com Features • Ultrahigh-spees switching. • Halogen free compliance • • 1.8V drive Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --20 Gate-to-Source Voltage VGSS ±10 V V Drain Current (DC) ID --3 A Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% Allowable Power Dissipation PD When mounted on ceramic substrate (900mm2×0.8mm) --12 A 1 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Package Dimensions Product & Package Information unit : mm (typ) 7019A-003 • Package : MCPH3 • JEITA, JEDEC : SC-70, SOT-323 • Minimum Packing Quantity : 3,000 pcs./reel MCH3377-TL-E MCH3377-TL-H MCH3377-TL-W 0.15 0.25 2.0 1.6 0 to 0.02 QJ LOT No. 2.1 Marking LOT No. 3 Packing Type : TL TL 0.65 2 Electrical Connection 0.3 3 0.07 0.85 0.25 1 1 : Gate 2 : Source 3 : Drain 1 MCPH3 2 ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2014 March, 2014 32514HK TC-00002897/60612TKIM/N1407TIIM PE No. A0957-1/5 MCH3377 Electrical Characteristics at Ta=25°C Parameter Symbol Zero-Gate Voltage Drain Current Drain-to-Source Breakdown Voltage V(BR)DSS IDSS Gate-to-Source Leakage Current Cutoff Voltage Conditions Ratings min --20 IGSS ID=--1mA, VGS=0V VDS=--20V, VGS=0V VGS=±8V, VDS=0V VGS(off) VDS=--10V, ID=--1mA --0.4 Forward Transfer Admittance | yfs | VDS=--10V, ID=--1.5A 2.2 Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 ID=--1.5A, VGS=--4.5V ID=--1A, VGS=--2.5V RDS(on)3 ID=--0.2A, VGS=--1.8V Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time typ Unit max V --1 mA ±10 mA --1.3 3.8 V S 63 83 88 125 130 200 mW mW mW 375 pF 77 pF Crss 58 pF td(on) tr 8.1 ns 26 ns 42 ns Fall Time td(off) tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=--10V, f=1MHz See specified Test Circuit. VDS=--10V, VGS=--4.5V, ID=--3A 37 ns 4.6 nC 0.8 nC 1.3 IS=--3A, VGS=0V --0.83 nC --1.2 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit 0V --4V VDD= --10V VIN ID= --1.5A RL=6.67Ω VIN VOUT D PW=10μs D.C.≤1% G P.G 50Ω MCH3377 S Ordering Information Device Package Shipping MCH3377-TL-E MCH3377-TL-H MCH3377-TL-W memo Pb-Free MCPH3 3,000pcs./reel Pb-Free and Halogen Free Pb-Free and Halogen Free No. A0957-2/5 MCH3377 ID -- VDS 8V --0.2 --0.3 --0.6 --0.7 --0.8 --0.9 Drain-to-Source Voltage, VDS -- V RDS(on) -- VGS Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ --1.0A --1.5A 50 0 --1 --2 --3 --4 --5 --6 --7 Gate-to-Source Voltage, VGS -- V yfs -- ID IT13010 2 = Ta 1.0 °C 25 -- 75 °C °C 25 7 5 2 0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Drain Current, ID -- A SW Time -- ID 2 3 5 7 --10 IT13012 7 5 td (off) tf 3 2 tr td(on) 10 7 2 3 5 7 --1.0 --2.5 IT13009 50 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 IS -- VSD 140 160 IT13011 VGS=0V --1.0 7 5 3 2 --0.1 7 5 3 2 0 --0.2 --0.4 --0.6 --0.8 --1.0 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- VDS 1000 7 5 100 5 --0.1 100 --0.001 VDD= --10V VGS= --4V --2.0 2A = --0. 8V, I D . 1 -= VGS --1.0A , I D= V .5 2 -V GS= --1.5A V, I D= .5 4 -V GS= 150 --0.01 7 5 3 2 3 --1.5 200 --10 7 5 3 2 5 3 --1.0 Gate-to-Source Voltage, VGS -- V RDS(on) -- Ta 0 --60 --8 VDS= --10V 7 --0.5 250 Ta=25°C 200 100 0 IT13008 250 ID= --0.2A 0 --1.0 Source Current, IS -- A Forward Transfer Admittance, yfs -- S --0.5 Ciss, Coss, Crss -- pF Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ --0.4 °C 25°C --25° C --0.1 Ta=7 5 0 10 Switching Time, SW Time -- ns 25°C VGS= --1.0V 300 0 --2 --1 --0.5 150 °C --25° C --1.0 --3 Ta=7 5 Drain Current, ID -- A --3. 0V --1.5V --1.5 0 VDS= --10V --1 . --4.5V --2.0 ID -- VGS --5 --4 --8.0V --2.5 Drain Current, ID -- A --2. 5V --3.0 --1.2 IT13013 f=1MHz Ciss 3 2 100 Coss Crss 7 5 3 2 Drain Current, ID -- A 3 5 7 --10 IT13014 2 0 --2 --4 --6 --8 --10 --12 --14 --16 Drain-to-Source Voltage, VDS -- V --18 --20 IT13015 No. A0957-3/5 MCH3377 VGS -- Qg VDS= --10V ID= --3A --4.0 --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 0 1 2 3 4 Total Gate Charge, Qg -- nC 5 IT13016 PD -- Ta 1.2 1.0 M ou 0.8 nt ed on 0.6 ac er am ic 0.4 bo ar d (9 3 2 m m2 � 0. 0 20 40 60 80 ASO PW≤10µs IDP= --12A ID= --3A DC --1.0 7 5 3 2 --0.1 7 5 op 10 era 10 10 0µ s s 1m ms 0m s n( Ta =2 5° C) tio Operation in this area is limited by RDS(on). Ta=25°C Single pulse Mounted on a ceramic board (900mm2�0.8mm) --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 IT13017 Drain-to-Source Voltage, VDS -- V 00 0.2 0 --10 7 5 3 2 --0.5 0 Allowable Power Dissipation, PD -- W 3 2 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --4.5 100 120 Ambient Temperature, Ta -- °C 8m m ) 140 160 IT13018 No. A0957-4/5 MCH3377 Outline Drawing MCH3377-TL-E, MCH3377-TL-H, MCH3377-TL-W Land Pattern Example Mass (g) Unit 0.007 mm * For reference Unit: mm 2.1 0.6 0.4 0.65 0.65 Note on usage :Since the MCH3377 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. PS No. A0957-5/5