MCH3374 Ordering number : ENA0857A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET MCH3374 General-Purpose Switching Device Applications Features • • • Low ON-resistance Ultrahigh-spees switching 1.8V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Allowable Power Dissipation Channel Temperature PD Tch Storage Temperature Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) Unit --12 V ±8 V --3 A --12 A 1.0 W 150 °C --55 to +150 °C This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Package Dimensions Product & Package Information unit : mm (typ) 7019A-003 • Package : MCPH3 • JEITA, JEDEC : SC-70, SOT-323 • Minimum Packing Quantity : 3,000 pcs./reel MCH3374-TL-E 0.15 0.25 2.0 Packing Type : TL 1.6 QF TL 0.25 1 0.65 2 Electrical Connection 0.3 3 0.07 0.85 2.1 0 t o 0.02 LOT No. LOT No. 3 Marking 1 : Gate 2 : Source 3 : Drain 1 SANYO : MCPH3 2 http://semicon.sanyo.com/en/network 60612TKIM/61307PE TIIM TC-00000716 No.A0857-1/7 MCH3374 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Conditions V(BR)DSS IDSS ID=--1mA, VGS=0V VDS=--12V, VGS=0V VGS=±6.4V, VDS=0V VDS=--6V, ID=--1mA Forward Transfer Admittance IGSS VGS(off) | yfs | Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage RDS(on)3 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Ratings min typ Unit max --12 V --0.4 VDS=--6V, ID=--1.5A ID=--1.5A, VGS=--4.5V 2.7 ID=--0.8A, VGS=--2.5V ID=--0.3A, VGS=--1.8V --10 μA ±10 μA --1.4 4.5 V S 54 70 mΩ 80 115 mΩ 125 215 mΩ 405 pF 145 pF Crss 100 pF Turn-ON Delay Time td(on) 8.8 ns Rise Time tr td(off) 80 ns 41 ns Turn-OFF Delay Time Fall Time VDS=--6V, f=1MHz See specified Test Circuit. tf Qg Total Gate Charge Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=--6V, VGS=--4.5V, ID=--3A IS=--3A, VGS=0V 50 ns 5.6 nC 0.7 nC 1.6 nC --0.85 --1.2 V Switching Time Test Circuit VDD= --6V VIN 0V --4.5V ID= --1.5A RL=4Ω VIN D VOUT PW=10μs D.C.≤1% G MCH3374 P.G 50Ω S Ordering Information Device MCH3374-TL-E Package Shipping memo MCPH3 3,000pcs./reel Pb Free No.A0857-2/7 MCH3374 ID -- VDS ID -- VGS --4 VDS= --6V .5V V GS= --1 C --2 --1 25°C --1 --3 --25°C --2 Ta=75 ° Drain Current, ID -- A --1 .8 V --3.0 V --4.5 V --2.5 V --5.0V --6.0V Drain Current, ID -- A --3 0 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 Drain-to-Source Voltage, VDS -- V --1.0 0 --1.0 --1.5 --2.0 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 300 --0.5 IT12598 --2.5 IT12599 RDS(on) -- Ta 200 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 250 --0.8A 200 --1.5A ID= --0.3A 100 50 0 0 --2 --4 --6 2 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S °C -25 =a °C T 75 °C 25 1.0 7 5 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Drain Current, ID -- A 7 5 3 --40 --20 5 0 20 40 60 80 100 120 --1.0 7 5 3 2 --0.1 7 5 3 2 0 7 --0.2 --0.4 --0.6 --0.8 --1.0 Diode Forward Voltage, VSD -- V SW Time -- ID 160 IT12601 IS -- VSD IT12602 --1.2 IT12603 Ciss, Coss, Crss -- VDS 1000 VDD= --6V VGS= --4.5V 140 VGS=0V --0.01 7 5 3 2 3 0.1 --0.01 f=1MHz 7 2 5 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns --10 7 5 3 2 5 3 50 Ambient Temperature, Ta -- °C VDS= --6V 7 = --1.5A 4.5V, I D V GS= -- IT12600 | yfs | -- ID 10 --2.5 V GS= 0 --60 --8 Gate-to-Source Voltage, VGS -- V A = --0.8 V, I D 100 5°C 25°C --25° C 150 3A = --0. 8V, I D . 1 -= VGS 150 Ta= 7 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C 100 7 5 td(off) tf 3 2 tr 10 td(on) Ciss 3 2 Coss Crss 100 7 5 7 3 2 --0.01 5 2 3 5 7 --0.1 2 3 5 7 --1.0 Drain Current, ID -- A 2 3 5 7 IT12604 0 --2 --4 --6 --8 --10 Drain-to-Source Voltage, VDS -- V --12 IT12605 No.A0857-3/7 MCH3374 VGS -- Qg 3 2 VDS= --6V ID= --3A --4.0 --10 7 5 --3.5 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --4.5 --3.0 --2.5 --2.0 --1.5 --0.5 3 2 1 2 3 4 5 6 Total Gate Charge, Qg -- nC IT12606 PD -- Ta 1.2 1.0 PW≤10μs 10 0 1m μs 10 s ms ID= --3A DC 3 2 --0.1 7 5 0 IDP= --12A --1.0 7 5 --1.0 0 Allowable Power Dissipation, PD -- W 3 2 ASO 10 era 0ms tio n( Ta = op 25 °C ) Operation in this area is limited by RDS(on). Ta=25°C Single pulse Mounted on a ceramic board (900mm2×0.8mm) --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 IT12607 M ou nt 0.8 ed on ac er am ic 0.6 bo ar d( 90 0.4 0m m2 ×0 .8 m 0.2 m ) 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT12608 No.A0857-4/7 MCH3374 Taping Specification MCH3374-TL-E No.A0857-5/7 MCH3374 Outline Drawing MCH3374-TL-E Land Pattern Example Mass (g) Unit 0.007 mm * For reference Unit: mm 2.1 0.6 0.4 0.65 0.65 No.A0857-6/7 MCH3374 Note on usage : Since the MCH3374 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. 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Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of June, 2012. Specifications and information herein are subject to change without notice. PS No.A0857-7/7