Ordering number : ENA1564B MCH3376 Power MOSFET –20V, 241mΩ, –1.5A, Single P-Channel http://onsemi.com Features • ESD diode-Protected gate • High speed switching and Low loss • Pb-free and RoHS Compliance • • Drive at low voltage:1.8V drive Low RDS(on) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --20 Gate-to-Source Voltage VGSS ±10 V Drain Current (DC) ID --1.5 A Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% --6 A Power Dissipation PD When mounted on ceramic substrate (900mm2×0.8mm) 0.8 W 150 °C --55 to +150 °C Junction Temperature Tj Storage Temperature Tstg V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Package Dimensions Product & Package Information unit : mm (typ) 7019A-003 • Package : MCPH3 • JEITA, JEDEC : SC-70, SOT-323 • Minimum Packing Quantity : 3,000 pcs./reel MCH3376-TL-E MCH3376-TL-W 0.15 0.25 2.0 Packing Type: TL Marking 1.6 2.1 0 to 0.02 0.25 1 0.65 QH LOT No. LOT No. 3 TL 2 0.3 0.07 0.85 Electrical Connection 3 1 : Gate 2 : Source 3 : Drain MCPH3 1 2 ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2014 July, 2014 72814HK TC-00003112/60612TKIM/O1409TKIM PE No. A1564-1/5 MCH3376 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS IDSS Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current IGSS Gate Threshold Voltage Forward Transconductance VGS(th) gFS Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 Input Capacitance RDS(on)3 Conditions ID=--1mA, VGS=0V VDS=--20V, VGS=0V VGS=±8V, VDS=0V Ratings min typ Unit max --20 VDS=--10V, ID=--1mA V --0.4 VDS=--10V, ID=--750mA 1.14 ID=--750mA, VGS=--4.5V ID=--300mA, VGS=--2.5V ID=--100mA, VGS=--1.8V Ciss --1 mA ±10 mA --1.4 1.9 V S 185 241 275 385 410 615 mW mW mW 120 pF 26 pF Output Capacitance Coss Reverse Transfer Capacitance Crss 20 pF Turn-ON Delay Time td(on) 5.3 ns Rise Time tr 9.7 ns Turn-OFF Delay Time td(off) 16 ns Fall Time tf 14 ns Total Gate Charge Qg 1.7 nC Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Forward Diode Voltage VSD VDS=--10V, f=1MHz See specified Test Circuit. VDS=--10V, VGS=--4.5V, ID=--1.5A IS=--1.5A, VGS=0V 0.28 nC 0.47 nC --0.89 --1.2 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit VDD= --10V --4.5V 0V VIN PW=10μs D.C.≤1% ID= --750mA RL=13.3Ω VIN VOUT D G P.G 50Ω S MCH3376 Ordering Information Device MCH3376-TL-E MCH3376-TL-W Package MCPH3 Shipping 3,000pcs./reel memo Pb-Free Pb-Free and Halogen Free No. A1564-2/5 MCH3376 ID -- VDS --1.2 --0.4 --0.2 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 RDS(on) -- VGS Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 300 200 100 --2 --3 --4 --5 --6 --7 --8 Gate-to-Source Voltage, VGS -- V gFS -- ID 5 --9 --1.5 .1A 400 A = --0.3 V, I D .5 2 -V GS= A = --0.75 4.5V, I D V GS= -- 300 200 100 --40 0 --20 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT14617 IS -- VSD --1.5 VGS=0V --1.0 7 -2 =- Ta 7 5 C 75° 3 2 3 2 --0.1 7 5 25°C 3 2 2 3 5 7 --0.1 2 3 5 Drain Current, ID -- A SW Time -- ID 5 7 --1.0 2 --0.01 3 0 --0.2 --0.4 --0.6 --0.8 --1.0 Forward Diode Voltage, VSD -- V HD14618 Ciss, Coss, Crss -- VDS 3 VDD= --10V VGS= --4.5V 3 C C 5° 1.0 5 --25 ° Source Current, IS -- A °C 25 0.1 --1.2 HD14619 f=1MHz 2 Ciss td (off) tf 2 10 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns --3.0 HD14615 --0 I = .8V, D 1 -= VGS 500 IT14616 VDS= --10V 2 tr 7 td(on) 5 3 2 --0.1 --2.5 600 0 --60 --10 3 7 --0.01 --2.0 RDS(on) -- Ta 5°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ --0.75A --1 --1.0 700 --0.3A 0 --0.5 Gate-to-Source Voltage, VGS -- V Ta=25°C ID= --0.1A 400 0 HD14614 600 500 0 --0.9 --1.0 Ta= 7 0 700 Forward Transconductance, gFS -- S --0.4 --0.2 Drain-to-Source Voltage, VDS -- V 0 --0.6 °C VGS= --1.0V Ta= 75° C --0.6 --0.8 --2 5 --0.8 --1.0 25 °C V .8 -- --1.0 0 VDS= --10V --1.4 1.5V Drain Current, ID -- A Drain Current, ID -- A --1.2 ID -- VGS --1.5 --1 --8.0 V --4. 5V --1.4 --3 .5 V --2 .5V --1.5 100 7 5 Coss Crss 3 2 10 2 3 5 7 --1.0 Drain Current, ID -- A 2 3 IT14620 7 0 --2 --4 --6 --8 --10 --12 --14 --16 Drain-to-Source Voltage, VDS -- V --18 --20 IT14621 No. A1564-3/5 MCH3376 VGS -- Qg --10 7 5 VDS= --10V ID= --1.5A --4.0 3 2 --3.5 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --4.5 --3.0 --2.5 --2.0 --0.5 3 2 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Total Gate Charge, Qg -- nC PD -- Ta Power Dissipation, PD -- W 1.0 1.8 2.0 IT14622 ID= --1.5A DC 1m s 10 op 0m ati on 0μ s m 10 er 3 2 --1.0 0 10 --1.0 7 5 --0.1 7 5 --1.5 SOA IDP= --6A (PW≤10μs) s s (T a= 25 °C Operation in this area is limited by RDS(on). ) Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 HD15060 When mounted on ceramic substrate (900mm2×0.8mm) 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 HD15061 No. A1564-4/5 MCH3376 Outline Drawing MCH3376-TL-E, MCH3376-TL-W Land Pattern Example Mass (g) Unit 0.007 mm * For reference Unit: mm 2.1 0.6 0.4 0.65 0.65 Note on usage :Since the MCH3376 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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