Ordering number : ENA0151B CPH3350 P-Channel Power MOSFET http://onsemi.com –20V, –3A, 83mΩ, Single CPH3 Features • • • • Ultrahigh-speed switching 1.8V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings Unit VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Allowable Power Dissipation Channel Temperature PD Tch Storage Temperature Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) --20 V ±10 V --3 A --12 A 1.0 W 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7015A-004 • Package : CPH3 • JEITA, JEDEC : SC-59, TO-236, SOT-23 • Minimum Packing Quantity : 3,000 pcs./reel 0.6 2.9 CPH3350-TL-H CPH3350-TL-W 0.15 Packing Type: TL LOT No. WG 0.2 0.05 1.6 2.8 Marking 3 0.9 0.2 0.6 TL 1 2 0.95 0.4 1 : Gate 2 : Source 3 : Drain Electrical Connection 3 CPH3 1 2 Semiconductor Components Industries, LLC, 2013 October, 2013 O0913 TKIM TC-00002895/60612 TKIM/D1411PE TKIM TC-00002683 No. A0151-1/6 CPH3350 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Conditions ID=--1mA, VGS=0V VDS=--20V, VGS=0V Ratings min typ Unit max --20 V --1 μA ±10 μA Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) VGS=±8V, VDS=0V VDS=--10V, ID=--1mA Forward Transfer Admittance | yfs | VDS=--10V, ID=--1.5A 4.3 RDS(on)1 ID=--1.5A, VGS=--4.5V 64 83 mΩ RDS(on)2 ID=--1A, VGS=--2.5V 89 124 mΩ RDS(on)3 ID=--0.2A, VGS=--1.8V 131 196 mΩ Static Drain-to-Source On-State Resistance Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance --0.4 --1.3 V S 375 pF 77 pF Crss 58 pF Turn-ON Delay Time td(on) 8.1 ns Rise Time tr 26 ns Turn-OFF Delay Time td(off) 42 ns Fall Time tf 37 ns Total Gate Charge Qg 4.6 nC 0.8 nC Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=--10V, f=1MHz See specified Test Circuit. VDS=--10V, VGS=--4.5V, ID=--3A 1.3 IS=--3A, VGS=0V --0.83 nC --1.2 V Switching Time Test Circuit VIN VDD= --10V 0V --4.5V ID= --1.5A RL=6.67Ω VIN D VOUT PW=10μs D.C.≤1% G CPH3350 P.G 50Ω S Ordering Information Device CPH3350-TL-H CPH3350-TL-W Package Shipping memo CPH3 3,000pcs./reel Pb Free and Halogen Free No. A0151-2/6 CPH3350 ID -- VDS VDS= --10V --1 .8V --4.5V --1.5 --1.0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 Drain-to-Source Voltage, VDS -- V 0 0 --1.0 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 250 200 ID= --0.2A --1.0A --1.5A 50 --1 --2 --3 --4 --5 --6 --7 Gate-to-Source Voltage, VGS -- V 3 C 5° -2 =Ta 75 1.0 °C °C 25 7 5 --20 0 20 40 60 80 100 120 2 140 160 IT13011 IS -- VSD VGS=0V --1.0 7 5 3 2 --0.1 7 5 3 2 --0.01 7 5 3 2 3 0.1 --0.01 50 --10 7 5 3 2 5 2 100 Ambient Temperature, Ta -- °C Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S --8 VDS= --10V 7 --2.5 IT13009 2A = --0. 8V, I D . 1 -= VGS --1.0A , I D= V .5 2 -V GS= --1.5A V, I D= .5 4 -V GS= 150 IT13010 | yfs | -- ID 10 --2.0 200 0 --60 --40 0 0 --1.5 RDS(on) -- Ta 250 Ta=25°C 100 --1.0 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 300 --0.5 IT13008 Ta=7 5°C 25°C --25° C 0 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 25°C VGS= --1.0V 0 --0.001 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 0 5 7 --10 IT13012 Drain Current, ID -- A --0.2 --0.4 --0.6 f=1MHz 5 Ciss, Coss, Crss -- pF td (off) tf 3 2 tr --1.2 IT13013 7 100 5 --1.0 Ciss, Coss, Crss -- VDS 1000 VDD= --10V VGS= --4V 7 --0.8 Diode Forward Voltage, VSD -- V SW Time -- ID 2 Switching Time, SW Time -- ns --2 --1 --0.5 150 --3 C --25° C --1.5V Ta=7 5° Drain Current, ID -- A V --3. 0 --2.0 ID -- VGS --5 --4 --8.0V --2.5 Drain Current, ID -- A --2. 5V --3.0 Ciss 3 2 100 Coss Crss 7 5 10 td(on) 3 7 5 --0.1 2 2 3 5 7 --1.0 2 Drain Current, ID -- A 3 5 7 --10 IT13014 0 --2 --4 --6 --8 --10 --12 --14 --16 Drain-to-Source Voltage, VDS -- V --18 --20 IT13015 No. A0151-3/6 CPH3350 --100 7 5 3 2 VDS= --10V ID= --3A --4.0 --3.5 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V ASO VGS -- Qg --4.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 1 2 3 4 Total Gate Charge, Qg -- nC IT13016 PD -- Ta 1.2 Allowable Power Dissipation, PD -- W 5 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 IDP= --12A (PW≤10μs) 10m s 10 0m s ID= --3A 100 μs 1m s DC op era tio n Operation in this area is limited by RDS(on). Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) --0.01 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Drain-to-Source Voltage, VDS -- V 5 7 --100 IT16676 When mounted on ceramic substrate (900mm2×0.8mm) 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT13018 No. A0151-4/6 CPH3350 Outline Drawing CPH3350-TL-H, CPH3350-TL-W Land Pattern Example Mass (g) Unit 0.013 mm * For reference Unit: mm 2.4 1.4 0.6 0.95 0.95 No. A0151-5/6 CPH3350 Note on usage : Since the CPH3350 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. 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