MCH6321 Ordering number : ENA0963A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET MCH6321 General-Purpose Switching Device Applications Features • • 1.8V drive Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings Unit VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Allowable Power Dissipation Channel Temperature PD Tch Storage Temperature Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (1200mm2×0.8mm) --20 V ±10 V --4 A --16 A 1.5 W 150 °C --55 to +150 °C Product & Package Information unit : mm (typ) 7022A-009 • Package : MCPH6 • JEITA, JEDEC : SC-88, SC-70-6, SOT-363 • Minimum Packing Quantity : 3,000 pcs./reel 2.0 6 5 0.15 0 t o 0.02 1 2 0.3 0.85 1 6 2 5 3 4 JV TL 3 0.65 Marking LOT No. 0.25 Packing Type : TL LOT No. 0.07 MCH6321-TL-E 4 2.1 1.6 0.25 Package Dimensions Electrical Connection 1, 2, 5, 6 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain 3 SANYO : MCPH6 4 http://semicon.sanyo.com/en/network 62012 TKIM/N1407PE TIIM TC-00001027 No. A0963-1/7 MCH6321 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS IDSS Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Forward Transfer Admittance IGSS VGS(off) | yfs | Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 Cutoff Voltage RDS(on)3 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Conditions Ratings min ID=--1mA, VGS=0V VDS=--20V, VGS=0V VGS=±8V, VDS=0V --20 VDS=--10V, ID=--1mA VDS=--10V, ID=--2A --0.4 2.5 ID=--2A, VGS=--4.5V ID=--1A, VGS=--2.5V ID=--0.2A, VGS=--1.8V typ Unit max V --1 μA ±10 μA --1.3 4.3 V S 63 83 mΩ 88 125 mΩ 130 200 mΩ 375 pF 77 pF Crss 58 pF td(on) tr 8.1 ns 31 ns 40 ns Fall Time td(off) tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=--10V, f=1MHz See specified Test Circuit. VDS=--10V, VGS=--4.5V, ID=--4A 39 ns 4.6 nC 0.8 nC 1.3 IS=--4A, VGS=0V --0.86 nC --1.2 V Switching Time Test Circuit 0V --4V VDD= --10V VIN ID= --2A RL=5Ω VIN D PW=10μs D.C.≤1% VOUT G MCH6321 P.G 50Ω S Ordering Information Device MCH6321-TL-E Package Shipping memo MCPH6 3,000pcs./reel Pb Free No. A0963-2/7 MCH6321 ID -- VDS 8V VDS= --10V --1 . --4.5V --1.5 --1.0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 Drain-to-Source Voltage, VDS -- V 0 0 --1.0 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 250 200 ID= --0.2A --1.0A --2.0A 50 --1 --2 --3 --4 --5 --6 --7 Gate-to-Source Voltage, VGS -- V 3 = Ta °C 25 -- 75 1.0 °C °C 25 7 5 --40 --20 0 20 40 60 80 100 120 2 140 160 IT13027 IS -- VSD VGS=0V --1.0 7 5 3 2 --0.1 7 5 3 2 --0.01 7 5 3 2 3 0.1 --0.01 50 --10 7 5 3 2 5 2 100 Ambient Temperature, Ta -- °C Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S --8 VDS= --10V 7 --2.5 IT13009 2A = --0. 8V, I D . 1 -= VGS --1.0A , I D= V .5 2 -V GS= --2.0A V, I D= .5 4 -V GS= 150 IT13026 | yfs | -- ID 10 --2.0 200 0 --60 0 0 --1.5 RDS(on) -- Ta 250 Ta=25°C 100 --1.0 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 300 --0.5 IT13008 Ta=7 5°C 25°C --25° C 0 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 25°C VGS= --1.0V 0 --0.001 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 0 5 7 --10 IT13012 Drain Current, ID -- A --0.2 --0.4 --0.6 f=1MHz 5 Ciss, Coss, Crss -- pF td (off) tf 3 2 tr --1.2 IT13013 7 100 5 --1.0 Ciss, Coss, Crss -- VDS 1000 VDD= --10V VGS= --4V 7 --0.8 Diode Forward Voltage, VSD -- V SW Time -- ID 2 Switching Time, SW Time -- ns --2 --1 --0.5 150 --3 --25° C --1.5V Ta=7 5°C Drain Current, ID -- A --3. 0V --2.0 ID -- VGS --5 --4 --8.0V --2.5 Drain Current, ID -- A --2. 5V --3.0 Ciss 3 2 100 Coss Crss 7 5 10 td(on) 3 7 5 --0.1 2 2 3 5 7 --1.0 2 Drain Current, ID -- A 3 5 7 --10 IT13014 0 --2 --4 --6 --8 --10 --12 --14 --16 Drain-to-Source Voltage, VDS -- V --18 --20 IT13015 No. A0963-3/7 MCH6321 VGS -- Qg 3 2 VDS= --10V ID= --4A --4.0 --10 7 5 --3.5 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --4.5 --3.0 --2.5 --2.0 --1.5 3 2 1 2 3 4 Total Gate Charge, Qg -- nC 5 IT13028 PD -- Ta 1.6 Ta=25°C Single pulse Mounted on a ceramic board (1200mm2×0.8mm) --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 IT13029 1.5 1.4 ed nt ou M 1.2 on d ar bo ic am er ac 1.0 0.8 m 0m 20 (1 0.6 2× 0.4 ) m 8m 0. Allowable Power Dissipation, PD -- W 3 2 --0.5 0 10 ms 1 DC 00 ms op era tio n( Ta =2 Operation in this area 5° C) is limited by RDS(on). --1.0 7 5 --0.1 7 5 PW≤10μs 10 0μ 1m s s ID= --4A 3 2 --1.0 0 ASO IDP= --16A 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT13030 No. A0963-4/7 MCH6321 Taping Specification MCH6321-TL-E No. A0963-5/7 MCH6321 Outline Drawing MCH6321-TL-E Land Pattern Example Mass (g) Unit 0.008 mm * For reference Unit: mm 2.1 0.6 0.4 0.65 0.65 No. A0963-6/7 MCH6321 Note on usage : Since the MCH6321 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 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Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a confirmation. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of June, 2012. Specifications and information herein are subject to change without notice. PS No. A0963-7/7