MCH3377 Ordering number : ENA0957A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET MCH3377 General-Purpose Switching Device Applications Features • • Ultrahigh-spees switching. Halogen free compliance • • 1.8V drive Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) Unit --20 V ±10 V Allowable Power Dissipation ID IDP PD 1 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Drain Current (Pulse) PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) Package Dimensions Product & Package Information unit : mm (typ) 7019A-003 • Package : MCPH3 • JEITA, JEDEC : SC-70, SOT-323 • Minimum Packing Quantity : 3,000 pcs./reel 0.15 0.25 2.0 MCH3377-TL-E MCH3377-TL-H Packing Type : TL 1.6 TL 0.25 1 0.65 2 Electrical Connection 0.3 3 0.07 0.85 2.1 QJ LOT No. 0 t o 0.02 A A Marking LOT No. 3 --3 --12 1 : Gate 2 : Source 3 : Drain 1 SANYO : MCPH3 2 http://semicon.sanyo.com/en/network 60612TKIM/N1407PE TIIM TC-00001025 No.A0957-1/7 MCH3377 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Conditions V(BR)DSS IDSS ID=--1mA, VGS=0V VDS=--20V, VGS=0V Forward Transfer Admittance IGSS VGS(off) | yfs | VGS=±8V, VDS=0V VDS=--10V, ID=--1mA VDS=--10V, ID=--1.5A Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 ID=--1.5A, VGS=--4.5V ID=--1A, VGS=--2.5V ID=--0.2A, VGS=--1.8V Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage RDS(on)3 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Ratings min typ Unit max --20 V --0.4 2.2 --1 μA ±10 μA --1.3 3.8 V S 63 83 mΩ 88 125 mΩ 130 200 mΩ 375 pF 77 pF Crss 58 pF Turn-ON Delay Time td(on) 8.1 ns Rise Time tr td(off) 26 ns 42 ns Turn-OFF Delay Time Fall Time VDS=--10V, f=1MHz See specified Test Circuit. tf Qg Total Gate Charge Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=--10V, VGS=--4.5V, ID=--3A IS=--3A, VGS=0V 37 ns 4.6 nC 0.8 nC 1.3 nC --0.83 --1.2 V Switching Time Test Circuit VDD= --10V VIN 0V --4V ID= --1.5A RL=6.67Ω VIN D VOUT PW=10μs D.C.≤1% G MCH3377 P.G 50Ω S Ordering Information Package Shipping memo MCH3377-TL-E Device MCPH3 3,000pcs./reel Pb Free MCH3377-TL-H MCPH3 3,000pcs./reel Pb Free and Halogen Free No.A0957-2/7 MCH3377 ID -- VDS 8V VDS= --10V --1 . --4.5V --1.5 --1.0 25°C VGS= --1.0V 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 Drain-to-Source Voltage, VDS -- V 0 0 --1.0 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 250 200 ID= --0.2A --1.0A --1.5A 50 --1 --2 --3 --4 --5 --6 --7 Gate-to-Source Voltage, VGS -- V 100 50 0 --60 3 = Ta °C 25 -- 75 1.0 °C °C 25 7 5 0 20 40 60 80 100 120 2 140 160 IT13011 IS -- VSD --10 7 5 3 2 VGS=0V --1.0 7 5 3 2 --0.1 7 5 3 2 --0.01 7 5 3 2 3 0.1 --0.01 --20 Ambient Temperature, Ta -- °C 5 2 --40 IT13010 Source Current, IS -- A Forward Transfer Admittance, ⏐yfs⏐ -- S --8 VDS= --10V 7 --2.5 IT13009 2A = --0. 8V, I D . 1 -= VGS --1.0A , I D= V .5 2 -V GS= --1.5A V, I D= .5 4 -V GS= 150 ⏐yfs⏐ -- ID 10 --2.0 200 0 0 --1.5 RDS(on) -- Ta 250 Ta=25°C 100 --1.0 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 300 --0.5 IT13008 Ta=7 5°C 25°C --25° C 0 --0.001 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 0 5 7 --10 IT13012 Drain Current, ID -- A --0.2 --0.4 --0.6 f=1MHz 5 Ciss, Coss, Crss -- pF td (off) tf 3 2 tr --1.2 IT13013 7 100 5 --1.0 Ciss, Coss, Crss -- VDS 1000 VDD= --10V VGS= --4V 7 --0.8 Diode Forward Voltage, VSD -- V SW Time -- ID 2 Switching Time, SW Time -- ns --2 --1 --0.5 150 --3 --25° C --1.5V Ta=7 5°C Drain Current, ID -- A --3. 0V --2.0 ID -- VGS --5 --4 --8.0V --2.5 Drain Current, ID -- A --2. 5V --3.0 Ciss 3 2 100 Coss Crss 7 5 10 td(on) 3 7 5 --0.1 2 2 3 5 7 --1.0 2 Drain Current, ID -- A 3 5 7 --10 IT13014 0 --2 --4 --6 --8 --10 --12 --14 --16 Drain-to-Source Voltage, VDS -- V --18 --20 IT13015 No.A0957-3/7 MCH3377 VGS -- Qg 3 2 VDS= --10V ID= --3A --4.0 --10 7 5 --3.5 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --4.5 --3.0 --2.5 --2.0 --1.5 --0.5 3 2 1 2 3 4 5 Total Gate Charge, Qg -- nC IT13016 PD -- Ta 1.2 1.0 M ou nt ed 0.8 on 0.6 ac er am ic bo ar d 0.4 (9 00 m m2 ✕ 0.2 10 0 1m μs s 10 ms ID= --3A DC op 10 0 tio ms n( Ta =2 5 era 3 2 --0.1 7 5 0 PW≤10μs IDP= --12A --1.0 7 5 --1.0 0 Allowable Power Dissipation, PD -- W 3 2 ASO Operation in this area is limited by RDS(on). °C ) Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 IT13017 Drain-to-Source Voltage, VDS -- V 0. 8m m ) 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT13018 No.A0957-4/7 MCH3377 Taping Specification MCH3377-TL-E, MCH3377-TL-H No.A0957-5/7 MCH3377 Outline Drawing MCH3377-TL-E, MCH3377-TL-H Land Pattern Example Mass (g) Unit 0.007 mm * For reference Unit: mm 2.1 0.6 0.4 0.65 0.65 No.A0957-6/7 MCH3377 Note on usage : Since the MCH3377 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of June, 2012. Specifications and information herein are subject to change without notice. PS No.A0957-7/7