NDBA100N10B D

NDBA100N10B
Power MOSFET
100V, 6.9mΩ, 100A, N-Channel
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Features
• Low On-Resistance
• Low Gate Charge
• High Speed Switching
• 100% Avalanche Tested
• Pb-Free, Halogen Free and RoHS Compliance
VDSS
RDS(on) Max
6.9 mΩ@15V
100V
N-Channel
Absolute Maximum Ratings at Ta = 25°C
Parameter
Symbol
2, 4
Value
Unit
Drain to Source Voltage
VDSS
100
V
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
100
A
IDP
400
A
PD
110
W
175
°C
−55 to +175
°C
PW≤10μs, duty cycle≤1%
Power Dissipation
Tc=25°C
Junction Temperature
Tj
Storage Temperature
Tstg
Source Current (Body Diode)
IS
100
A
Avalanche Energy (Single Pulse) *1
EAS
147
mJ
TL
260
°C
Lead Temperature for Soldering
Purposes, 3mm from Case for 10 Seconds
1 : Gate
2 : Drain
3 : Source
4 : Drain
1
3
Marking
4
100N10
1
2
B
3
LOT No.
TO-263
CASE 418AJ
Packing Type : TL
Thermal Resistance Ratings
Parameter
Symbol
Value
Junction to Case Steady State
RθJC
1.36
Junction to Ambient *2
RθJA
62.5
Unit
°C/W
TL
Note : *1 VDD=48V, L=100μH, IAV=40A (Fig.1)
*2
100A
8.2 mΩ@10V
Electrical Connection
Specifications
Drain Current (Pulse)
ID Max
Surface mounted on FR4 board using recommended footprint
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
March 2015 - Rev. 1
1
Publication Order Number :
NDBA100N10B/D
NDBA100N10B
Electrical Characteristics at Ta = 25°C
Parameter
Symbol
Value
Conditions
min
typ
Unit
max
Drain to Source Breakdown Voltage
V(BR)DSS
ID=10mA, VGS=0V
Zero-Gate Voltage Drain Current
IDSS
VDS=100V, VGS=0V
10
μA
Gate to Source Leakage Current
IGSS
VGS=±20V, VDS=0V
±100
nA
Gate Threshold Voltage
VGS(th)
VDS=10V, ID=1mA
4
V
Forward Transconductance
gFS
VDS=10V, ID=50A
75
RDS(on)1
ID=50A, VGS=15V
5.7
6.9
mΩ
RDS(on)2
ID=50A, VGS=10V
6.3
8.2
mΩ
Static Drain to Source On-State Resistance
100
V
2
S
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-ON Delay Time
td(on)
Rise Time
tr
Turn-OFF Delay Time
td(off)
Fall Time
tf
Total Gate Charge
Qg
Gate to Source Charge
Qgs
Gate to Drain “Miller” Charge
Qgd
Forward Diode Voltage
VSD
IS=100A, VGS=0V
1.1
Reverse Recovery Time
trr
See Fig.3
130
ns
Reverse Recovery Charge
Qrr
IS=100A, VGS=0V, VDD=50V, di/dt=100A/μs
400
nC
VDS=50V, f=1MHz
See Fig.2
VDS=48V, VGS=10V, ID=100A
2,950
pF
1,250
pF
20
pF
40
ns
385
ns
68
ns
52
ns
35
nC
13
nC
10
nC
1.5
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Fig.1 Unclamped Inductive Switching Test Circuit
≥50Ω
10V
0V
D
L
S
NDBA100N10B
G
VDD
50Ω
Fig.3 Reverse Recovery Time Test Circuit
NDBA100N10B
D
L
G
S
VDD
Driver MOSFET
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2
Fig.2 Switching Time Test Circuit
NDBA100N10B
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3
NDBA100N10B
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4
NDBA100N10B
Package Dimensions
NDBA100N10BT4H
D2PAK-3 (TO-263, 3-LEAD)
CASE 418AJ
ISSUE B
B
E2
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. CHAMFER OPTIONAL
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH. MOLD FLASH SHALL NOT EXCEED 0.005
PER SIDE. THESE DIMENSIONS ARE MEASURED
AT THE OUTERMOST EXTREMES OF THE
PLASTIC BODY AT DATUM H.
5. THERMAL PAD CONTOUR IS OPTIONAL WITHIN
DIMENSIONS E, L1, D1 AND E1.
6. OPTIONAL MOLD FEATURE
A
A
E
L1
c2
NOTE 3
A
D1
L1
D
H
DETAIL C
E1
0.10
M
B AM
L2
A
e
c
NOTE 6
2X
TOP VIEW
b
0.10
VIEW A-A
SIDE VIEW
B AM
M
H
GAUGE
PLANE
L3
A1
L
M
B
SEATING
PLANE
DIM
A
A1
b
c
c2
D
D1
E
E1
e
H
L
L1
L2
L3
M
INCHES
MIN
MAX
0.160
0.190
0.000
0.010
0.020
0.039
0.012
0.029
0.045
0.065
0.330
0.380
0.260
----0.380
0.420
0.245
----0.100 BSC
0.575
0.625
0.070
0.110
----0.066
----0.070
0.010 BSC
0º
8º
MILLIMETERS
MIN
MAX
4.06
4.83
0.00
0.25
0.51
0.99
0.30
0.74
1.14
1.65
8.38
9.65
6.60
----9.65
10.67
6.22
----2.54 BSC
14.60
15.88
1.78
2.79
----1.68
----1.78
0.25 BSC
0º
8º
DETAIL C
GENERIC MARKING DIAGRAMS*
VIEW A-A
OPTIONAL CONSTRUCTIONS
RECOMMENDED
SOLDERING FOOTPRINT*
XX
XXXXXXXXX
AWLYWWG
0.436
XXXXXXXXG
AYWW
AYWW
XXXXXXXXG
AKA
XXXXXX
XXYMW
0.366
0.653
A
WL
Y
WW
W
M
G
AKA
2X
0.169
2X
0.063
0.100
PITCH
DIMENSIONS: INCHES
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Week Code (SSG)
= Month Code (SSG)
= Pb-Free Package
= Polarity Indicator
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb −Free indicator, “G” or microdot “ ”,
may or may not be present.
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ORDERING INFORMATION
Device
Package
Shipping
note
NDBA100N10BT4H
D2PAK-3
(TO-263, 3-LEAD)
800 pcs. / Tape & Reel
Pb-Free and Halogen Free
† For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel
Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF
Note on usage : Since the NDBA100N10B is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States
and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of
SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without
further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose,
nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including
without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can
and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are
not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
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directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was
negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all
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