TC0205AD Datasheet

TC0205AD
New Product
Vishay Siliconix
Dual N- and P-Channel "20-V Low-Threshold MOSFET
PRODUCT SUMMARY
Channel
VDS (V)
N-Channel
20
P-Channel
–20
rDS(on) ()
ID (mA)
2.0 @ VGS = 4.5 V
250
2.5 @ VGS = 2.5 V
150
3.8 @ VGS = –4.5 V
–180
5.0 @ VGS = –2.5 V
–100
FEATURES
BENEFITS
APPLICATIONS
D
D
D
D
D
D
D
D
D
D
D Replace Digital Transistors,
Level-Shifter
D Battery Operated Systems
D Power Supply Converter Circuits
D Load/Power Switching-Cell Phones,
PDA
Very Small Outline (SC-70, 6-Leads)
Low On-Resistance: 2.0 (N-Ch)
Low Threshold: 0.9 V (typ)
Fast Switching Speed: 35 ns
2.5-V or Lower Operation
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Circuits
Low Battery Voltage Operation
SOT-363
SC-70 (6-Leads)
S1
1
6
D1
G1
2
5
G2
D2
3
4
S2
Marking Code: Ewl
E = Part Number Code for TC0205AD
w = Week Code
l = Lot Traceability
Order Number:
TC0205AD
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage
VDS
20
–20
Gate-Source Voltage
VGS
"8
"8
250
–180
200
–140
500
–500
Continuous Drain Current (TJ = 150_C)
_ a
TA = 25_C
TA = 70_C
Pulsed Drain Current
ID
IDM
TA = 25_C
Maximum Power Dissipationa
TA = 70_C
Operating Junction and Storage Temperature Range
Unit
V
mA
0.20 (Total)
PD
0.13 (Total)
W
TJ, Tstg
–55 to 150
_C
Symbol
Limit
Unit
RthJA
625 (Total)
_C/W
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
Document Number: 70882
S-04279—Rev. B, 16-Jul-01
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11-1
TC0205AD
New Product
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0 V, ID = 10 A
N-Ch
20
24
VGS = 0 V, ID = –10 A
P-Ch
–20
–24
VDS = VGS, ID = 50 A
N-Ch
0.4
0.9
1.5
VDS = VGS, ID = –50 A
P-Ch
–0.4
–0.9
–1.5
N-Ch
"2
"100
P-Ch
"2
"100
N-Ch
0.001
100
–0.001
–100
VDS = 0 V, VGS = "8
" V
VDS = 20 V, VGS = 0 V
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Diode Forward Voltageb
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = –20 V, VGS = 0 V
P-Ch
VDS = 20 V, VGS = 0 V, TJ = 55_C
N-Ch
1
VDS = –20 V, VGS = 0 V, TJ = 55_C
P-Ch
–1
VDS w 2.5 V, VGS = 5.0 V
N-Ch
120
VDS w –2.5 V, VGS = –5.0 V
P-Ch
–120
VDS w 4.5 V, VGS = 8.0 V
N-Ch
400
VDS w –4.5 V, VGS = –8.0 V
P-Ch
–400
VGS = 2.5 V, ID = 150 mA
N-Ch
1.6
VGS = –2.5 V, ID = –75 mA
P-Ch
4
5
VGS = 4.5 V, ID = 250 mA
N-Ch
1.2
2.0
3.8
V
nA
A
mA
2.5
VGS = –4.5 V, ID = –180 mA
P-Ch
2.6
VDS = 2.5 V, ID = 50 mA
N-Ch
150
VDS = –2.5 V, ID = – 50 mA
P-Ch
200
IS = 50 mA, VGS = 0 V
N-Ch
0.7
1.2
IS = –50 mA, VGS = 0 V
P-Ch
–0.7
–1.2
N-Ch
300
450
P-Ch
300
450
N-Ch
25
P-Ch
25
N-Ch
100
mS
V
Dynamica
Total Gate Charge
Qg
N-Channel
VDS = 5 V, VGS = 4.5 V, ID = 100 mA
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Qgs
P-Channel
VDS = –5 V, VGS = –4.5 V, ID = –100 mA
Qgd
Ciss
N-Channel
VDS = 5 V, VGS = 0 V
Output Capacitance
Reverse Transfer Capacitance
Coss
P-Channel
VDS = –5 V, VGS = 0 V
Crss
pC
P-Ch
100
N-Ch
15
P-Ch
15
N-Ch
11
P-Ch
11
N-Ch
5
P-Ch
5
N-Ch
7
12
P-Ch
7
12
N-Ch
25
35
P-Ch
25
35
N-Ch
19
30
pF
Switching
Turn-On Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
tf
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 s, duty cycle v 2%.
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11-2
N-Channel
VDD = 3 V, RL = 100 ID 0.25 A, VGEN = 4.5 V, RG = 10 P-Channel
VDD = –3 V, RL = 100 ID 0.25 A, VGEN = –4.5 V, RG = 10 P-Ch
19
30
N-Ch
9
15
P-Ch
9
15
ns
VNOJ
VPOJ
Document Number: 70882
S-04279—Rev. B, 16-Jul-01
TC0205AD
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Output Characteristics
NĆCHANNEL
Transfer Characteristics
0.8
1.25
VGS = 3.5 thru 5 V
TC = –55_C
ID – Drain Current (A)
ID – Drain Current (A)
1.00
3V
0.75
2.5 V
0.50
2V
25_C
0.6
0.4
125_C
0.2
0.25
1.5 V
1V
0.00
0
1
2
3
0.0
0.0
4
0.5
VDS – Drain-to-Source Voltage (V)
1.0
On-Resistance vs. Drain Current
2.5
3.0
Capacitance
50
VGS = 0 V
If = 1 MHz
6
40
C – Capacitance (pF)
rDS(on) – Drain-Source On-Resistance ( Ω )
2.0
VGS – Gate-to-Source Voltage (V)
7
5
4
3
VGS = 2.5 V
30
Ciss
20
2
Coss
10
1
VGS = 4.5 V
Crss
0
0
0
1
2
3
0
4
4
ID – Drain Current (A)
8
12
16
20
VDS – Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
1.6
rDS(on) – Drain-Source On-Resistance ( Ω )
(Normalized)
10
VGS – Gate-to-Source Voltage (V)
1.5
VDS = 6 V
ID = 100 mA
8
6
4
2
0
0
100
200
300
400
Qg – Total Gate Charge (pC)
Document Number: 70882
S-04279—Rev. B, 16-Jul-01
500
600
1.4
VGS = 4.5 V
ID = 100 m A
1.2
1.0
0.8
0.6
–50
–25
0
25
50
75
100
125
150
TJ – Junction Temperature (_C)
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11-3
TC0205AD
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
8
LS – Source Current (A)
rDS(on) – Drain-Source On-Resistance ( Ω )
3
1
TJ = 125_C
0.1
TJ = 25_C
0.01
TJ = –55_C
0.001
0.00
NĆCHANNEL
0.3
0.9
0.6
6
ID = 250 mA
4
2
0
0
1.2
2
VSD – Source-to-Drain Voltage (V)
4
6
8
10
VGS – Gate-to-Source Voltage (V)
Threshold Voltage
0.2
ID = 50 A
VGS(th) – Variance (V)
0.1
–0.0
–0.1
–0.2
–0.3
–0.4
–50
–25
0
25
50
75
100
125
150
TJ – Junction Temperature (_C)
www.vishay.com
11-4
Document Number: 70882
S-04279—Rev. B, 16-Jul-01
TC0205AD
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
PĆCHANNEL
For the following graphics p-channel negative polarities for all voltage and current values are represented as positive values.
Output Characteristics
Transfer Characteristics
1.2
0.5
TC = –55_C
5V
1.0
0.4
ID – Drain Current (A)
ID – Drain Current (A)
4.5 V
0.8
4V
0.6
3.5 V
3V
0.4
2.5 V
0.2
25_C
0.3
125_C
0.2
0.1
2V
0.0
0
1
2
3
0.0
0.0
4
0.5
VDS – Drain-to-Source Voltage (V)
2.0
2.5
3.0
Capacitance
45
8
36
6
C – Capacitance (pF)
rDS(on) – Drain-Source On-Resistance ( Ω )
1.5
VGS – Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
VGS = 2.5 V
4
VGS = 4.5 V
2
27
Ciss
18
Coss
9
Crss
0
0.0
0
0.5
1.0
1.5
2.0
2.5
0
3.0
3
ID – Drain Current (A)
Gate Charge
rDS(on) – Drain-Source On-Resistance ( Ω )
(Normalized)
6
4
2
0
0
100
200
300
400
Qg – Total Gate Charge (pC)
Document Number: 70882
S-04279—Rev. B, 16-Jul-01
9
12
On-Resistance vs. Junction Temperature
VDS = 6 V
ID = 80 mA
8
6
VDS – Drain-to-Source Voltage (V)
10
VGS – Gate-to-Source Voltage (V)
1.0
500
600
1.6
1.4
VGS = 4.5 V
ID = 180 m A
1.2
1.0
0.8
0.6
–50
–25
0
25
50
75
100
125
150
TJ – Junction Temperature (_C)
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11-5
TC0205AD
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
PĆCHANNEL
For the following graphics p-channel negative polarities for all voltage and current values are represented as positive values.
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
6
1
rDS(on) – Drain-Source On-Resistance ( Ω )
IS – Source Current (A)
TJ = 150_C
0.1
TJ = 25_C
0.01
0.001
0.00
0.5
1.0
1.5
5
4
ID = 180 mA
3
2
1
0
1.0
1.5
VSD – Source-to-Drain Voltage (V)
2.0
2.5
3.0
3.5
4.0
4.5
VGS – Gate-to-Source Voltage (V)
Threshold Voltage
0.3
ID = 50 A
VGS(th) – Variance (V)
0.2
0.1
0.0
–0.1
–0.2
–50
–25
0
25
50
75
100
125
150
TJ – Junction Temperature (_C)
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11-6
Document Number: 70882
S-04279—Rev. B, 16-Jul-01
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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1