TP0205A Datasheet

TP0205A/AD
New Product
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET, Low-Threshold
PRODUCT SUMMARY
VDS (V)
–20
rDS(on) (W)
ID (mA)
3.8 @ VGS = –4.5 V
–180
5.0 @ VGS = –2.5 V
–100
FEATURES
BENEFITS
APPLICATIONS
D
D
D
D
D
D
D
D
D
D
D Drivers: Relays, Solenoids, Lamps,
Hammers, Display, Memories
D Battery Operated Systems
D Load/Power Switching-Cell Phones,
PDA
High-Side Switching
Low On-Resistance: 2.6 W (typ)
Low Threshold: 0.9 V (typ)
Fast Switching Speed: 35 ns
2.5 V or Lower Operation
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Circuits
Low Battery Voltage Operation
SOT-363
SOT-323
SC-70 (6-Leads)
SC-70 (3-Leads)
G
1
3
S
D
2
S1
1
6
D1
G1
2
5
G2
D2
3
4
S2
Marking Code:
TP0205A: Al
TP0205AD: Cwl
w = Week Code
l = Lot Traceability
Order Number:
TP0205AD
Order Number:
TP0205A
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
TP0205A
TP0205AD
Drain-Source Voltage
VDS
–20
Gate-Source Voltage
VGS
"8
Continuous Drain Current (TJ = 150_C)
_ a
TA = 25_C
TA = 70_C
Pulsed Drain Current
TA = 25_C
TA = 70_C
Operating Junction and Storage Temperature Range
PD
V
–180
ID
mA
–140
IDM
Maximum Power Dissipationa
Unit
–500
0.15
0.20 (Total)
0.10
0.13 (Total)
TJ, Tstg
W
_C
–55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Thermal resistance, Junction-to-Ambienta
Symbol
TP0205A
TP0205AD
Unit
RthJA
833
625 (Total)
_C/W
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
Document Number: 70869
S-04279—Rev. B, 16-Jul-01
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11-1
TP0205A/AD
New Product
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typb
V(BR)DSS
VDS = 0 V, ID = –10 mA
–20
–24
VGS(th)
VDS = VGS, ID = –50 mA
–0.4
–0.9
–1.5
IGSS
VDS = 0 V, VGS = "8 V
"2
"100
VDS = –20 V, VGS = 0 V
–0.001
–100
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward
Voltagea
V
nA
IDSS
–1
VDS = –20 V, VGS = 0 V, TJ = 55_C
ID(on)
VGS = –4.5 V, VDS = –8.0 V
–400
VGS = –2.5 V, VDS = –5.0 V
–120
mA
VGS = –4.5 V, ID = –180 mA
2.6
3.8
–75 mA
4.0
5.0
gfs
VDS = –2.5 V, ID = –50 mA
200
VSD
IS = –50 mA, VGS = 0 V
–0.7
–1.2
350
450
rDS(on)
VGS = –2.5 V, ID =
mA
W
mS
V
Dynamic
Total Gate Charge
Qg
VDS = –5.0 V, VGS = –4.5 V, ID = –100 mA
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
125
Input Capacitance
Ciss
20
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS = –5.0 V, VGS = 0 V, f = 1 MHz
pC
25
14
pF
5
Switching c
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
7
12
tr
25
35
19
30
9
15
td(off)
VDD = –3.0 V, RL = 100 W
ID = –0.25 A, VGEN = –4.5 V, RG = 10 W
tf
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. For design only, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
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11-2
ns
VPOJ
Document Number: 70869
S-04279—Rev. B, 16-Jul-01
TP0205A/AD
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Output Characteristics
Transfer Characteristics
–0.5
–1.2
–0.4
ID – Drain Current (A)
ID – Drain Current (A)
TJ = –55_C
5V
–1.0
4.5 V
–0.8
–4 V
–0.6
–3.5 V
–3 V
–0.4
–2.5 V
–0.2
25_C
–0.3
125_C
–0.2
–0.1
–2 V
0.0
0
–1
–2
–3
0.0
0.0
–4
–0.5
VDS – Drain-to-Source Voltage (V)
–1.0
–1.5
–2.0
–2.5
–3.0
VGS – Gate-to-Source Voltage (V)
Capacitance
On-Resistance vs. Drain Current
8
45
36
6
C – Capacitance (pF)
rDS(on) – On-Resistance ( Ω )
VGS = 0 V
f = 1 MHz
VGS = –2.5 V
4
VGS = –4.5 V
27
Ciss
18
Coss
2
9
0
0.0
Crss
0
–0.5
–1.0
–1.5
–2.0
–2.5
–3.0
0
–3
ID – Drain Current (A)
–12
On-Resistance vs. Junction Temperature
1.6
VDS = –6 V
ID = 80 mA
–8
rDS(on) – On-Resistance ( Ω )
(Normalized)
VGS – Gate-to-Source Voltage (V)
–9
VDS – Drain-to-Source Voltage (V)
Gate Charge
–10
–6
–6
–4
1.4
VGS = –4.5 V
ID = –180 mA
1.2
1.0
0.8
–2
0
0
100
200
300
400
Qg – Total Gate Charge (pC)
Document Number: 70869
S-04279—Rev. B, 16-Jul-01
500
600
0.6
–50
–25
0
25
50
75
100
125
150
TJ – Junction Temperature (_C)
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11-3
TP0205A/AD
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
6
–1
5
rDS(on) – On-Resistance ( Ω )
LS – Source Current (A)
TJ = 150_C
–0.1
TJ = 25_C
–0.01
4
ID = –180 mA
3
2
1
–0.001
0.00
–0.5
–1.0
0
–1.0
1.5
–1.5
VSD – Source-to-Drain Voltage (V)
–2.0
–2.5
–3.0
–3.5
–4.0
–4.5
VGS – Gate-to-Source Voltage (V)
Threshold Voltage
0.3
ID = –50 mA
VGS(th) – Variance (V)
0.2
0.1
0.0
–0.1
–0.2
–50
–25
0
25
50
75
100
125
150
TJ – Junction Temperature (_C)
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11-4
Document Number: 70869
S-04279—Rev. B, 16-Jul-01
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
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information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
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document or by any conduct of Vishay.
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Document Number: 91000
Revision: 18-Jul-08
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1