TP0205A/AD New Product Vishay Siliconix P-Channel 20-V (D-S) MOSFET, Low-Threshold PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (mA) 3.8 @ VGS = –4.5 V –180 5.0 @ VGS = –2.5 V –100 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories D Battery Operated Systems D Load/Power Switching-Cell Phones, PDA High-Side Switching Low On-Resistance: 2.6 W (typ) Low Threshold: 0.9 V (typ) Fast Switching Speed: 35 ns 2.5 V or Lower Operation Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation SOT-363 SOT-323 SC-70 (6-Leads) SC-70 (3-Leads) G 1 3 S D 2 S1 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code: TP0205A: Al TP0205AD: Cwl w = Week Code l = Lot Traceability Order Number: TP0205AD Order Number: TP0205A ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol TP0205A TP0205AD Drain-Source Voltage VDS –20 Gate-Source Voltage VGS "8 Continuous Drain Current (TJ = 150_C) _ a TA = 25_C TA = 70_C Pulsed Drain Current TA = 25_C TA = 70_C Operating Junction and Storage Temperature Range PD V –180 ID mA –140 IDM Maximum Power Dissipationa Unit –500 0.15 0.20 (Total) 0.10 0.13 (Total) TJ, Tstg W _C –55 to 150 THERMAL RESISTANCE RATINGS Parameter Thermal resistance, Junction-to-Ambienta Symbol TP0205A TP0205AD Unit RthJA 833 625 (Total) _C/W Notes a. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 70869 S-04279—Rev. B, 16-Jul-01 www.vishay.com 11-1 TP0205A/AD New Product Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typb V(BR)DSS VDS = 0 V, ID = –10 mA –20 –24 VGS(th) VDS = VGS, ID = –50 mA –0.4 –0.9 –1.5 IGSS VDS = 0 V, VGS = "8 V "2 "100 VDS = –20 V, VGS = 0 V –0.001 –100 Max Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea V nA IDSS –1 VDS = –20 V, VGS = 0 V, TJ = 55_C ID(on) VGS = –4.5 V, VDS = –8.0 V –400 VGS = –2.5 V, VDS = –5.0 V –120 mA VGS = –4.5 V, ID = –180 mA 2.6 3.8 –75 mA 4.0 5.0 gfs VDS = –2.5 V, ID = –50 mA 200 VSD IS = –50 mA, VGS = 0 V –0.7 –1.2 350 450 rDS(on) VGS = –2.5 V, ID = mA W mS V Dynamic Total Gate Charge Qg VDS = –5.0 V, VGS = –4.5 V, ID = –100 mA Gate-Source Charge Qgs Gate-Drain Charge Qgd 125 Input Capacitance Ciss 20 Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = –5.0 V, VGS = 0 V, f = 1 MHz pC 25 14 pF 5 Switching c Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) 7 12 tr 25 35 19 30 9 15 td(off) VDD = –3.0 V, RL = 100 W ID = –0.25 A, VGEN = –4.5 V, RG = 10 W tf Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. For design only, not subject to production testing. c. Switching time is essentially independent of operating temperature. www.vishay.com 11-2 ns VPOJ Document Number: 70869 S-04279—Rev. B, 16-Jul-01 TP0205A/AD New Product Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Output Characteristics Transfer Characteristics –0.5 –1.2 –0.4 ID – Drain Current (A) ID – Drain Current (A) TJ = –55_C 5V –1.0 4.5 V –0.8 –4 V –0.6 –3.5 V –3 V –0.4 –2.5 V –0.2 25_C –0.3 125_C –0.2 –0.1 –2 V 0.0 0 –1 –2 –3 0.0 0.0 –4 –0.5 VDS – Drain-to-Source Voltage (V) –1.0 –1.5 –2.0 –2.5 –3.0 VGS – Gate-to-Source Voltage (V) Capacitance On-Resistance vs. Drain Current 8 45 36 6 C – Capacitance (pF) rDS(on) – On-Resistance ( Ω ) VGS = 0 V f = 1 MHz VGS = –2.5 V 4 VGS = –4.5 V 27 Ciss 18 Coss 2 9 0 0.0 Crss 0 –0.5 –1.0 –1.5 –2.0 –2.5 –3.0 0 –3 ID – Drain Current (A) –12 On-Resistance vs. Junction Temperature 1.6 VDS = –6 V ID = 80 mA –8 rDS(on) – On-Resistance ( Ω ) (Normalized) VGS – Gate-to-Source Voltage (V) –9 VDS – Drain-to-Source Voltage (V) Gate Charge –10 –6 –6 –4 1.4 VGS = –4.5 V ID = –180 mA 1.2 1.0 0.8 –2 0 0 100 200 300 400 Qg – Total Gate Charge (pC) Document Number: 70869 S-04279—Rev. B, 16-Jul-01 500 600 0.6 –50 –25 0 25 50 75 100 125 150 TJ – Junction Temperature (_C) www.vishay.com 11-3 TP0205A/AD New Product Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 6 –1 5 rDS(on) – On-Resistance ( Ω ) LS – Source Current (A) TJ = 150_C –0.1 TJ = 25_C –0.01 4 ID = –180 mA 3 2 1 –0.001 0.00 –0.5 –1.0 0 –1.0 1.5 –1.5 VSD – Source-to-Drain Voltage (V) –2.0 –2.5 –3.0 –3.5 –4.0 –4.5 VGS – Gate-to-Source Voltage (V) Threshold Voltage 0.3 ID = –50 mA VGS(th) – Variance (V) 0.2 0.1 0.0 –0.1 –0.2 –50 –25 0 25 50 75 100 125 150 TJ – Junction Temperature (_C) www.vishay.com 11-4 Document Number: 70869 S-04279—Rev. B, 16-Jul-01 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1