VISHAY TN0205A

TN0205A/AD
New Product
Vishay Siliconix
N-Channel 20-V MOSFET
PRODUCT SUMMARY
VDS (V)
20
rDS(on) (W)
ID (mA)
2.0 @ VGS = 4.5 V
250
2.5 @ VGS = 2.5 V
150
FEATURES
D
D
D
D
Low On-Resistance: 2.0 Ω
Low Threshold: 0.9 V (typ)
Fast Switching Speed: 35 ns
2.5-V or Lower Operation
BENEFITS
APPLICATIONS
D
D
D
D
D
D Drivers: Relays, Solenoids, Lamps,
Hammers, Display, Memories
D Battery operated Systems
D Solid State Relay
D Load/Power Switching-Cell Phones, PDA
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Circuits
Low Battery Voltage Operation
SOT-363
SOT-323
SC-70 (6-Leads)
SC-70 (3-Leads)
G
1
3
S
D
2
Order Number:
TN0205A
S1
1
6
D1
Marking Code:
G1
2
5
G2
TN0205A: Bl
TN0205AD: Dwl
D2
3
4
S2
w = Week Code
l = Lot Traceability
Order Number:
TN0205AD
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
TN0205A
TN0205AD
Drain-Source Voltage
VDS
20
Gate-Source Voltage
VGS
"8
Continuous Drain Current (TJ = 150_C)
_ a
TA = 25_C
TA = 70_C
Pulsed Drain Current
TA = 25_C
TA = 70_C
Operating Junction and Storage Temperature Range
PD
V
250
ID
mA
200
IDM
Maximum Power Dissipationa
Unit
500
0.15
0.20 (Total)
0.10
0.13 (Total)
TJ, Tstg
W
_C
–55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Thermal Resistance, Junction-to-Ambienta
Symbol
TN0205A
TN0205AD
Unit
RthJA
833
625 (Total)
_C/W
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
Document Number: 70868
S-04279—Rev. B, 16-Jul-01
www.vishay.com
11-1
TN0205A/AD
New Product
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
V(BR)DSS
VDS = 0 V, ID = 10 mA
20
24
VGS(th)
VDS = VGS, ID = 50 mA
0.4
0.9
1.5
IGSS
VDS = 0 V, VGS = "8 V
"2
"100
VDS = 20 V, VGS = 0 V
0.001
100
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward
Voltagea
V
nA
IDSS
5
VDS = 20 V, VGS = 0 V, TJ = 55_C
ID(on)
VDS = 5.0 V, VGS = 2.5 V
120
160
VDS = 8.0 V, VGS = 4.5 V
400
800
mA
VGS = 2.5 V, ID = 150 mA
1.6
2.5
VGS = 4.5 V, ID = 250 mA
1.2
2.0
gfs
VDS = 2.5 V, ID = 50 mA
200
VSD
IS = 50 mA, VGS = 0 V
0.7
1.2
350
450
rDS(on)
mA
W
mS
V
Dynamic
Total Gate Charge
Qg
VDS = 5.0 V, VGS = 4.5 V, ID = 100 mA
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
100
Input Capacitance
Ciss
20
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS = 5.0 V, VGS = 0 V, f = 1 MHz
pC
25
14
pF
5
Switchingb, c
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
7
12
tr
25
35
19
30
9
15
td(off)
VDD = 3.0 V, RL = 100 W
ID = 0.25 A, VGEN = 4.5 V, RG = 10 W
tf
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. For design only, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
www.vishay.com
11-2
ns
VNOJ
Document Number: 70868
S-04279—Rev. B, 16-Jul-01
TN0205A/AD
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Output Characteristics
Transfer Characteristics
0.8
1.25
4.0 V
3.5 V
VGS = 5 V
TJ = –55_C
ID – Drain Current (A)
ID – Drain Current (A)
1.00
3V
0.75
2.5 V
0.50
2V
25_C
0.6
0.4
125_C
0.2
0.25
1.5 V
1V
0.00
0
1
2
3
0.0
0.0
4
0.5
VDS – Drain-to-Source Voltage (V)
1.0
1.5
2.0
2.5
3.0
VGS – Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
7
50
40
C – Capacitance (pF)
rDS(on) – On-Resistance ( Ω )
6
5
4
3
VGS = 2.5 V
30
Ciss
20
2
Coss
10
1
VGS = 4.5 V
Crss
0
0
0
1
2
3
0
4
4
ID – Drain Current (A)
12
16
20
VDS – Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
1.6
VDS = 6 V
ID = 100 mA
8
rDS(on) – On-Resistance ( Ω )
(Normalized)
VGS – Gate-to-Source Voltage (V)
8
6
4
2
1.4
VGS = 4.5 V
ID = 100 m A
1.2
1.0
0.8
0
0
100
200
300
400
Qg – Total Gate Charge (pC)
Document Number: 70868
S-04279—Rev. B, 16-Jul-01
500
600
0.6
–50
–25
0
25
50
75
100
125
150
TJ – Junction Temperature (_C)
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11-3
TN0205A/AD
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
8
3
TJ = 125_C
rDS(on) – On-Resistance ( Ω )
IS – Source Current (A)
1
0.1
TJ = 25_C
0.01
TJ = –55_C
6
ID = 250 mA
4
2
0
0.001
0.00
0.3
0.9
0.6
0
1.2
2
VSD – Source-to-Drain Voltage (V)
4
6
8
10
VGS – Gate-to-Source Voltage (V)
Threshold Voltage
0.2
ID = 50 mA
VGS(th) – Variance (V)
0.1
–0.0
–0.1
–0.2
–0.3
–0.4
–50
–25
0
25
50
75
100
125
150
TJ – Junction Temperature (_C)
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11-4
Document Number: 70868
S-04279—Rev. B, 16-Jul-01