TN0205A/AD New Product Vishay Siliconix N-Channel 20-V MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (mA) 2.0 @ VGS = 4.5 V 250 2.5 @ VGS = 2.5 V 150 FEATURES D D D D Low On-Resistance: 2.0 Ω Low Threshold: 0.9 V (typ) Fast Switching Speed: 35 ns 2.5-V or Lower Operation BENEFITS APPLICATIONS D D D D D D Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories D Battery operated Systems D Solid State Relay D Load/Power Switching-Cell Phones, PDA Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation SOT-363 SOT-323 SC-70 (6-Leads) SC-70 (3-Leads) G 1 3 S D 2 Order Number: TN0205A S1 1 6 D1 Marking Code: G1 2 5 G2 TN0205A: Bl TN0205AD: Dwl D2 3 4 S2 w = Week Code l = Lot Traceability Order Number: TN0205AD ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol TN0205A TN0205AD Drain-Source Voltage VDS 20 Gate-Source Voltage VGS "8 Continuous Drain Current (TJ = 150_C) _ a TA = 25_C TA = 70_C Pulsed Drain Current TA = 25_C TA = 70_C Operating Junction and Storage Temperature Range PD V 250 ID mA 200 IDM Maximum Power Dissipationa Unit 500 0.15 0.20 (Total) 0.10 0.13 (Total) TJ, Tstg W _C –55 to 150 THERMAL RESISTANCE RATINGS Parameter Thermal Resistance, Junction-to-Ambienta Symbol TN0205A TN0205AD Unit RthJA 833 625 (Total) _C/W Notes a. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 70868 S-04279—Rev. B, 16-Jul-01 www.vishay.com 11-1 TN0205A/AD New Product Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max V(BR)DSS VDS = 0 V, ID = 10 mA 20 24 VGS(th) VDS = VGS, ID = 50 mA 0.4 0.9 1.5 IGSS VDS = 0 V, VGS = "8 V "2 "100 VDS = 20 V, VGS = 0 V 0.001 100 Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea V nA IDSS 5 VDS = 20 V, VGS = 0 V, TJ = 55_C ID(on) VDS = 5.0 V, VGS = 2.5 V 120 160 VDS = 8.0 V, VGS = 4.5 V 400 800 mA VGS = 2.5 V, ID = 150 mA 1.6 2.5 VGS = 4.5 V, ID = 250 mA 1.2 2.0 gfs VDS = 2.5 V, ID = 50 mA 200 VSD IS = 50 mA, VGS = 0 V 0.7 1.2 350 450 rDS(on) mA W mS V Dynamic Total Gate Charge Qg VDS = 5.0 V, VGS = 4.5 V, ID = 100 mA Gate-Source Charge Qgs Gate-Drain Charge Qgd 100 Input Capacitance Ciss 20 Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 5.0 V, VGS = 0 V, f = 1 MHz pC 25 14 pF 5 Switchingb, c Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) 7 12 tr 25 35 19 30 9 15 td(off) VDD = 3.0 V, RL = 100 W ID = 0.25 A, VGEN = 4.5 V, RG = 10 W tf Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. For design only, not subject to production testing. c. Switching time is essentially independent of operating temperature. www.vishay.com 11-2 ns VNOJ Document Number: 70868 S-04279—Rev. B, 16-Jul-01 TN0205A/AD New Product Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Output Characteristics Transfer Characteristics 0.8 1.25 4.0 V 3.5 V VGS = 5 V TJ = –55_C ID – Drain Current (A) ID – Drain Current (A) 1.00 3V 0.75 2.5 V 0.50 2V 25_C 0.6 0.4 125_C 0.2 0.25 1.5 V 1V 0.00 0 1 2 3 0.0 0.0 4 0.5 VDS – Drain-to-Source Voltage (V) 1.0 1.5 2.0 2.5 3.0 VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 7 50 40 C – Capacitance (pF) rDS(on) – On-Resistance ( Ω ) 6 5 4 3 VGS = 2.5 V 30 Ciss 20 2 Coss 10 1 VGS = 4.5 V Crss 0 0 0 1 2 3 0 4 4 ID – Drain Current (A) 12 16 20 VDS – Drain-to-Source Voltage (V) Gate Charge On-Resistance vs. Junction Temperature 10 1.6 VDS = 6 V ID = 100 mA 8 rDS(on) – On-Resistance ( Ω ) (Normalized) VGS – Gate-to-Source Voltage (V) 8 6 4 2 1.4 VGS = 4.5 V ID = 100 m A 1.2 1.0 0.8 0 0 100 200 300 400 Qg – Total Gate Charge (pC) Document Number: 70868 S-04279—Rev. B, 16-Jul-01 500 600 0.6 –50 –25 0 25 50 75 100 125 150 TJ – Junction Temperature (_C) www.vishay.com 11-3 TN0205A/AD New Product Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 8 3 TJ = 125_C rDS(on) – On-Resistance ( Ω ) IS – Source Current (A) 1 0.1 TJ = 25_C 0.01 TJ = –55_C 6 ID = 250 mA 4 2 0 0.001 0.00 0.3 0.9 0.6 0 1.2 2 VSD – Source-to-Drain Voltage (V) 4 6 8 10 VGS – Gate-to-Source Voltage (V) Threshold Voltage 0.2 ID = 50 mA VGS(th) – Variance (V) 0.1 –0.0 –0.1 –0.2 –0.3 –0.4 –50 –25 0 25 50 75 100 125 150 TJ – Junction Temperature (_C) www.vishay.com 11-4 Document Number: 70868 S-04279—Rev. B, 16-Jul-01