Si4308DY New Product Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY FEATURES VDS (V) Channel-1 30 Channel-2 rDS(on) (W) ID (A) 0.012 @ VGS = 10 V 9.6 0.018 @ VGS = 4.5 V 7.8 0.010 @ VGS = 10 V 13.5 0.0110 @ VGS = 4.5 V 12.8 D TrenchFETr Power MOSFET APPLICATIONS D DC-DC Converters - Game Stations - Video Graphics SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 30 0.53 V @ 3 A 2.0 SO-14 D1 D1 1 14 S1 D1 2 13 S1 G1 3 12 D2 G2 4 11 D2 S2 5 10 D2 S2 6 9 D2 S2 7 8 D2 D2 Schottky Diode G1 G2 S1 S2 N-Channel 1 MOSFET Top View N-Channel 2 MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Channel-1 Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150_C) _ a TA = 25_C TA = 70_C Pulsed Drain Current ID 10 secs Maximum Power Dissipationa TA = 25_C TA = 70_C Operating Junction and Storage Temperature Range IS PD Steady State 10 secs Steady State Unit 30 "20 V "12 9.6 7.3 13.5 9.9 7.7 5.8 10.8 7.6 IDM Continuous Source Current (Diode Conduction)a Channel-2 40 A 50 1.8 1.04 2.73 1.33 2 1.14 3.0 1.47 1.28 0.73 1.9 0.94 TJ, Tstg W _C -55 to 150 THERMAL RESISTANCE RATINGS Channel-1 Parameter Symbol t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Steady-State Steady-State RthJA RthJC Channel-2 Schottky Typ Max Typ Max Typ Max 50 62.5 34 42 40 48 90 110 70 85 76 93 33 40 17 22 21 26 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71941 S-21646—Rev. B, 23-Sep-02 www.vishay.com 1 Si4308DY New Product Vishay Siliconix MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED). Parameter Symbol Min Typa Max Ch-1 0.8 1.40 2.00 Ch-2 0.8 1.35 1.90 Test Condition Unit Static Gate Threshold Voltage Gate-Body Leakage VGS(th) IGSS VDS = VGS, ID = 250 mA m VDS = 0 V, VGS = "20 V Ch-1 100 VDS = 0 V, VGS = "12 V Ch-2 100 VDS = 24 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 24 V, VGS = 0 V, TJ = 85_C _ On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb Diode Forward Voltageb ID(on) rDS(on) gfs VSD VDS = 5 V, VGS = 10 V Ch-1 1 Ch-2 100 Ch-1 15 nA m mA 4000 Ch-2 Ch-1 20 Ch-2 30 A VGS = 10 V, ID = 9.6 A Ch-1 0.010 0.012 VGS = 10 V, ID = 13.5 A Ch-2 0.007 0.010 VGS = 4.5 V, ID = 7.8 A Ch-1 0.015 0.018 VGS = 4.5 V, ID = 12.8 A Ch-2 0.0085 0.0110 VDS = 15 V, ID = 9.6 A Ch-1 25 VDS = 15 V, ID = 13.5 A Ch-2 56 IS = 1.8 A, VGS = 0 V Ch-1 0.7 1.1 Ch-2 0.485 0.53 Ch-1 11.5 17 Channel-1 VDS = 15 V, VGS = 5 V, ID = 9.6 A Ch-2 40 60 Ch-1 3 Channel-2 VDS = 15 V, VGS = 5 V, ID = -13.5 A Ch-2 10 Ch-1 4.5 IS = 2.73 A, VGS = 0 V V W S V Dynamica Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Qg Qgs Qgd RG td(on) tr Turn-Off Delay Time Fall Time td(off) Channel-1 VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W Channel-2 VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W tf Source-Drain Reverse Recovery Time trr IF = 1.8 A, di/dt = 100 A/ms IF = 2.73 A, di/dt = 100 mA/ms nC Ch-2 8.8 Ch-1 1.45 Ch-2 0.8 Ch-1 10 20 Ch-2 17 26 Ch-1 5 10 Ch-2 14 21 Ch-1 30 60 Ch-2 102 155 Ch-1 10 20 Ch-2 26 40 Ch-1 30 60 Ch-2 40 65 W ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Forward Voltage Drop VF Maximum Reverse Leakage Current Irm Junction Capacitance www.vishay.com 2 CT Test Condition Typ Max IF = 3 A Min 0.485 0.53 IF = 3 A, TJ = 125_C 0.42 0.42 0.100 Vr = 30 V 0.008 Vr = 30 V, TJ = 75_C 0.4 5 Vr = -30 V, TJ = 125_C 6.5 20 Vr = 15 V 102 Unit V mA pF Document Number: 71941 S-21646—Rev. B, 23-Sep-02 Si4308DY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) CHANNEL−1 Output Characteristics Transfer Characteristics 30 30 VGS = 10 thru 4 V 25 I D - Drain Current (A) I D - Drain Current (A) 25 20 3V 15 10 5 20 15 10 TC = 125_C 5 25_C -55 _C 2V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 0.0 4.0 0.5 VDS - Drain-to-Source Voltage (V) 1.0 1.5 2.5 3.0 3.5 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 1400 0.025 1200 0.020 C - Capacitance (pF) r DS(on) - On-Resistance ( W ) 2.0 VGS = 4.5 V 0.015 VGS = 10 V 0.010 Ciss 1000 800 600 Coss 400 Crss 0.005 200 0.000 0 0 5 10 15 20 25 30 0 5 ID - Drain Current (A) 15 20 25 30 VDS - Drain-to-Source Voltage (V) Gate Charge On-Resistance vs. Junction Temperature 10 1.6 VDS = 15 V ID = 12.5 A r DS(on) - On-Resistance (W) (Normalized) V GS - Gate-to-Source Voltage (V) 10 8 6 4 2 VGS = 10 V ID = 12.5 A 1.4 1.2 1.0 0.8 0 0 4 8 12 16 Qg - Total Gate Charge (nC) Document Number: 71941 S-21646—Rev. B, 23-Sep-02 20 24 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) www.vishay.com 3 Si4308DY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) CHANNEL−1 Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.05 30 r DS(on) - On-Resistance ( W ) I S - Source Current (A) TJ = 150_C 10 TJ = 25_C ID = 12.5 A 0.04 0.03 0.02 0.01 0.00 1 0.0 0.2 0.4 0.6 0.8 1.0 0 1.2 VSD - Source-to-Drain Voltage (V) 4 6 8 10 VGS - Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power 0.4 200 0.2 160 ID = 250 mA -0.0 Power (W) V GS(th) Variance (V) 2 -0.2 120 80 -0.4 40 -0.6 -0.8 -50 0 -25 0 25 50 75 100 125 150 0.001 0.01 0.1 TJ - Temperature (_C) 1 10 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 90_C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10- 4 www.vishay.com 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 71941 S-21646—Rev. B, 23-Sep-02 Si4308DY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) CHANNEL−1 Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) CHANNEL−2 Output Characteristics Transfer Characteristics 50 50 VGS = 10 thru 3 V 40 I D - Drain Current (A) I D - Drain Current (A) 40 30 20 10 30 20 TC = 150_C 10 25_C -55 _C 0 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) 0 0.0 10 0.8 1.6 2.4 VGS - Gate-to-Source Voltage (V) Capacitance 0.015 6500 0.012 5200 Ciss C - Capacitance (pF) r DS(on) - On-Resistance ( W ) On-Resistance vs. Drain Current 3.2 VGS = 4.5 V 0.009 VGS = 10 V 0.006 0.003 3900 2600 1300 Coss Crss 0.000 0 0 10 20 30 ID - Drain Current (A) Document Number: 71941 S-21646—Rev. B, 23-Sep-02 40 50 0 6 12 18 24 30 VDS - Drain-to-Source Voltage (V) www.vishay.com 5 Si4308DY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) CHANNEL−2 Gate Charge On-Resistance vs. Junction Temperature 1.6 VDS = 15 V ID = 13 A 5 r DS(on) - On-Resistance (W) (Normalized) V GS - Gate-to-Source Voltage (V) 6 4 3 2 VGS = 10 V ID = 13 A 1.4 1.2 1.0 0.8 1 0 0 10 20 30 40 0.6 -50 50 -25 0 Qg - Total Gate Charge (nC) Source-Drain Diode Forward Voltage 50 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 0.030 TJ = 150_C r DS(on) - On-Resistance ( W ) 50 I S - Source Current (A) 25 TJ - Junction Temperature (_C) TJ = 25_C 10 0.025 ID = 13 A 0.020 0.015 0.010 0.005 0.000 1 0.0 0.2 0.4 0.6 0.8 1.0 0 1.2 VSD - Source-to-Drain Voltage (V) 4 6 8 10 VGS - Gate-to-Source Voltage (V) Reverse Current vs. Junction Temperature Single Pulse Power 100 200 10 160 1 Power (W) I R - Reverse Current (mA) 2 VDS = 24 V VDS = 30 V 0.1 120 80 0.01 40 0.001 0.0001 0 25 50 75 100 TJ - temperature (_C) www.vishay.com 6 125 150 0 0.001 0.01 1 0.1 10 Time (sec) Document Number: 71941 S-21646—Rev. B, 23-Sep-02 Si4308DY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) CHANNEL−2 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 90_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) SCHOTTKY Reverse Current vs. Junction Temperature Forward Voltage Drop 100 5 1 0.1 30 V I F - Forward Current (A) I R - Reverse Current (mA) 10 20 V 0.01 TJ = 150_C 1 TJ = 25_C 0.001 0.0001 0.1 0 25 50 75 100 TJ - Junction Temperature (_C) Document Number: 71941 S-21646—Rev. B, 23-Sep-02 125 150 0 0.2 0.4 0.6 0.8 VF - Forward Voltage Drop (V) www.vishay.com 7 Si4308DY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Capacitance 500 C T - Junction Capacitance (pF) SCHOTTKY 400 300 200 100 0 0 6 12 18 24 30 VKA - Reverse Voltage (V Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.1 0.2 Notes: 0.1 PDM t1 0.05 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 100_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 10 100 600 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 www.vishay.com 8 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71941 S-21646—Rev. B, 23-Sep-02