TP0205A/AD New Product Vishay Siliconix P-Channel 20-V (D-S) MOSFET, Low-Threshold PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (mA) 3.8 @ VGS = –4.5 V –180 5.0 @ VGS = –2.5 V –100 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories D Battery Operated Systems D Load/Power Switching-Cell Phones, PDA High-Side Switching Low On-Resistance: 2.6 W (typ) Low Threshold: 0.9 V (typ) Fast Switching Speed: 35 ns 2.5 V or Lower Operation Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation SOT-363 SOT-323 SC-70 (6-Leads) SC-70 (3-Leads) G 1 3 S D 2 S1 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code: TP0205A: Al TP0205AD: Cwl w = Week Code l = Lot Traceability Order Number: TP0205AD Order Number: TP0205A ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol TP0205A TP0205AD Drain-Source Voltage VDS –20 Gate-Source Voltage VGS "8 Continuous Drain Current (TJ = 150_C) _ a TA = 25_C TA = 70_C Pulsed Drain Current TA = 25_C TA = 70_C Operating Junction and Storage Temperature Range PD V –180 ID mA –140 IDM Maximum Power Dissipationa Unit –500 0.15 0.20 (Total) 0.10 0.13 (Total) TJ, Tstg W _C –55 to 150 THERMAL RESISTANCE RATINGS Parameter Thermal resistance, Junction-to-Ambienta Symbol TP0205A TP0205AD Unit RthJA 833 625 (Total) _C/W Notes a. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 70869 S-04279—Rev. B, 16-Jul-01 www.vishay.com 11-1 TP0205A/AD New Product Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typb V(BR)DSS VDS = 0 V, ID = –10 mA –20 –24 VGS(th) VDS = VGS, ID = –50 mA –0.4 –0.9 –1.5 IGSS VDS = 0 V, VGS = "8 V "2 "100 VDS = –20 V, VGS = 0 V –0.001 –100 Max Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea V nA IDSS –1 VDS = –20 V, VGS = 0 V, TJ = 55_C ID(on) VGS = –4.5 V, VDS = –8.0 V –400 VGS = –2.5 V, VDS = –5.0 V –120 mA VGS = –4.5 V, ID = –180 mA 2.6 3.8 –75 mA 4.0 5.0 gfs VDS = –2.5 V, ID = –50 mA 200 VSD IS = –50 mA, VGS = 0 V –0.7 –1.2 350 450 rDS(on) VGS = –2.5 V, ID = mA W mS V Dynamic Total Gate Charge Qg VDS = –5.0 V, VGS = –4.5 V, ID = –100 mA Gate-Source Charge Qgs Gate-Drain Charge Qgd 125 Input Capacitance Ciss 20 Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = –5.0 V, VGS = 0 V, f = 1 MHz pC 25 14 pF 5 Switching c Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) 7 12 tr 25 35 19 30 9 15 td(off) VDD = –3.0 V, RL = 100 W ID = –0.25 A, VGEN = –4.5 V, RG = 10 W tf Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. For design only, not subject to production testing. c. Switching time is essentially independent of operating temperature. www.vishay.com 11-2 ns VPOJ Document Number: 70869 S-04279—Rev. B, 16-Jul-01 TP0205A/AD New Product Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Output Characteristics Transfer Characteristics –0.5 –1.2 –0.4 ID – Drain Current (A) ID – Drain Current (A) TJ = –55_C 5V –1.0 4.5 V –0.8 –4 V –0.6 –3.5 V –3 V –0.4 –2.5 V –0.2 25_C –0.3 125_C –0.2 –0.1 –2 V 0.0 0 –1 –2 –3 0.0 0.0 –4 –0.5 VDS – Drain-to-Source Voltage (V) –1.0 –1.5 –2.0 –2.5 –3.0 VGS – Gate-to-Source Voltage (V) Capacitance On-Resistance vs. Drain Current 8 45 36 6 C – Capacitance (pF) rDS(on) – On-Resistance ( Ω ) VGS = 0 V f = 1 MHz VGS = –2.5 V 4 VGS = –4.5 V 27 Ciss 18 Coss 2 9 0 0.0 Crss 0 –0.5 –1.0 –1.5 –2.0 –2.5 –3.0 0 –3 ID – Drain Current (A) –12 On-Resistance vs. Junction Temperature 1.6 VDS = –6 V ID = 80 mA –8 rDS(on) – On-Resistance ( Ω ) (Normalized) VGS – Gate-to-Source Voltage (V) –9 VDS – Drain-to-Source Voltage (V) Gate Charge –10 –6 –6 –4 1.4 VGS = –4.5 V ID = –180 mA 1.2 1.0 0.8 –2 0 0 100 200 300 400 Qg – Total Gate Charge (pC) Document Number: 70869 S-04279—Rev. B, 16-Jul-01 500 600 0.6 –50 –25 0 25 50 75 100 125 150 TJ – Junction Temperature (_C) www.vishay.com 11-3 TP0205A/AD New Product Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 6 –1 5 rDS(on) – On-Resistance ( Ω ) LS – Source Current (A) TJ = 150_C –0.1 TJ = 25_C –0.01 4 ID = –180 mA 3 2 1 –0.001 0.00 –0.5 –1.0 0 –1.0 1.5 –1.5 VSD – Source-to-Drain Voltage (V) –2.0 –2.5 –3.0 –3.5 –4.0 –4.5 VGS – Gate-to-Source Voltage (V) Threshold Voltage 0.3 ID = –50 mA VGS(th) – Variance (V) 0.2 0.1 0.0 –0.1 –0.2 –50 –25 0 25 50 75 100 125 150 TJ – Junction Temperature (_C) www.vishay.com 11-4 Document Number: 70869 S-04279—Rev. B, 16-Jul-01