VISHAY TP0205AD

TP0205A/AD
New Product
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET, Low-Threshold
PRODUCT SUMMARY
VDS (V)
–20
rDS(on) (W)
ID (mA)
3.8 @ VGS = –4.5 V
–180
5.0 @ VGS = –2.5 V
–100
FEATURES
BENEFITS
APPLICATIONS
D
D
D
D
D
D
D
D
D
D
D Drivers: Relays, Solenoids, Lamps,
Hammers, Display, Memories
D Battery Operated Systems
D Load/Power Switching-Cell Phones,
PDA
High-Side Switching
Low On-Resistance: 2.6 W (typ)
Low Threshold: 0.9 V (typ)
Fast Switching Speed: 35 ns
2.5 V or Lower Operation
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Circuits
Low Battery Voltage Operation
SOT-363
SOT-323
SC-70 (6-Leads)
SC-70 (3-Leads)
G
1
3
S
D
2
S1
1
6
D1
G1
2
5
G2
D2
3
4
S2
Marking Code:
TP0205A: Al
TP0205AD: Cwl
w = Week Code
l = Lot Traceability
Order Number:
TP0205AD
Order Number:
TP0205A
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
TP0205A
TP0205AD
Drain-Source Voltage
VDS
–20
Gate-Source Voltage
VGS
"8
Continuous Drain Current (TJ = 150_C)
_ a
TA = 25_C
TA = 70_C
Pulsed Drain Current
TA = 25_C
TA = 70_C
Operating Junction and Storage Temperature Range
PD
V
–180
ID
mA
–140
IDM
Maximum Power Dissipationa
Unit
–500
0.15
0.20 (Total)
0.10
0.13 (Total)
TJ, Tstg
W
_C
–55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Thermal resistance, Junction-to-Ambienta
Symbol
TP0205A
TP0205AD
Unit
RthJA
833
625 (Total)
_C/W
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
Document Number: 70869
S-04279—Rev. B, 16-Jul-01
www.vishay.com
11-1
TP0205A/AD
New Product
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typb
V(BR)DSS
VDS = 0 V, ID = –10 mA
–20
–24
VGS(th)
VDS = VGS, ID = –50 mA
–0.4
–0.9
–1.5
IGSS
VDS = 0 V, VGS = "8 V
"2
"100
VDS = –20 V, VGS = 0 V
–0.001
–100
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward
Voltagea
V
nA
IDSS
–1
VDS = –20 V, VGS = 0 V, TJ = 55_C
ID(on)
VGS = –4.5 V, VDS = –8.0 V
–400
VGS = –2.5 V, VDS = –5.0 V
–120
mA
VGS = –4.5 V, ID = –180 mA
2.6
3.8
–75 mA
4.0
5.0
gfs
VDS = –2.5 V, ID = –50 mA
200
VSD
IS = –50 mA, VGS = 0 V
–0.7
–1.2
350
450
rDS(on)
VGS = –2.5 V, ID =
mA
W
mS
V
Dynamic
Total Gate Charge
Qg
VDS = –5.0 V, VGS = –4.5 V, ID = –100 mA
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
125
Input Capacitance
Ciss
20
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS = –5.0 V, VGS = 0 V, f = 1 MHz
pC
25
14
pF
5
Switching c
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
7
12
tr
25
35
19
30
9
15
td(off)
VDD = –3.0 V, RL = 100 W
ID = –0.25 A, VGEN = –4.5 V, RG = 10 W
tf
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. For design only, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
www.vishay.com
11-2
ns
VPOJ
Document Number: 70869
S-04279—Rev. B, 16-Jul-01
TP0205A/AD
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Output Characteristics
Transfer Characteristics
–0.5
–1.2
–0.4
ID – Drain Current (A)
ID – Drain Current (A)
TJ = –55_C
5V
–1.0
4.5 V
–0.8
–4 V
–0.6
–3.5 V
–3 V
–0.4
–2.5 V
–0.2
25_C
–0.3
125_C
–0.2
–0.1
–2 V
0.0
0
–1
–2
–3
0.0
0.0
–4
–0.5
VDS – Drain-to-Source Voltage (V)
–1.0
–1.5
–2.0
–2.5
–3.0
VGS – Gate-to-Source Voltage (V)
Capacitance
On-Resistance vs. Drain Current
8
45
36
6
C – Capacitance (pF)
rDS(on) – On-Resistance ( Ω )
VGS = 0 V
f = 1 MHz
VGS = –2.5 V
4
VGS = –4.5 V
27
Ciss
18
Coss
2
9
0
0.0
Crss
0
–0.5
–1.0
–1.5
–2.0
–2.5
–3.0
0
–3
ID – Drain Current (A)
–12
On-Resistance vs. Junction Temperature
1.6
VDS = –6 V
ID = 80 mA
–8
rDS(on) – On-Resistance ( Ω )
(Normalized)
VGS – Gate-to-Source Voltage (V)
–9
VDS – Drain-to-Source Voltage (V)
Gate Charge
–10
–6
–6
–4
1.4
VGS = –4.5 V
ID = –180 mA
1.2
1.0
0.8
–2
0
0
100
200
300
400
Qg – Total Gate Charge (pC)
Document Number: 70869
S-04279—Rev. B, 16-Jul-01
500
600
0.6
–50
–25
0
25
50
75
100
125
150
TJ – Junction Temperature (_C)
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11-3
TP0205A/AD
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
6
–1
5
rDS(on) – On-Resistance ( Ω )
LS – Source Current (A)
TJ = 150_C
–0.1
TJ = 25_C
–0.01
4
ID = –180 mA
3
2
1
–0.001
0.00
–0.5
–1.0
0
–1.0
1.5
–1.5
VSD – Source-to-Drain Voltage (V)
–2.0
–2.5
–3.0
–3.5
–4.0
–4.5
VGS – Gate-to-Source Voltage (V)
Threshold Voltage
0.3
ID = –50 mA
VGS(th) – Variance (V)
0.2
0.1
0.0
–0.1
–0.2
–50
–25
0
25
50
75
100
125
150
TJ – Junction Temperature (_C)
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11-4
Document Number: 70869
S-04279—Rev. B, 16-Jul-01