Si4559ADY New Product Vishay Siliconix N- and P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) N Channel N-Channel P Channel P-Channel ID (A)a 0.058 at VGS = 10 V 5.3 0.072 at VGS = 4.5 V 4.7 0.120 at VGS = –10 V –3.9 0.150 at VGS = –4.5 V –3.5 60 –60 60 rDS(on) (W) D TrenchFETr Power MOSFET D 100 % Rg & UIS Tested Qg (Typ) RoHS APPLICATIONS 6 nC COMPLIANT D CCFL Inverter 8nC D1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G2 G1 S1 D2 N-Channel MOSFET P-Channel MOSFET Top View Ordering Information: Si4559ADY-T1—E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 _C UNLESS OTHERWISE NOTED) Symbol N-Channel P-Channel Drain-Source Voltage Parameter VDS 60 –60 Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 _C) 5.3 TC = 70 _C 4.3 –3.2 4.3b, c –3.0b, c 3.4b, c –2.4b, c ID TA = 70 _C Pulsed Drain Current (10 ms Pulse Width) Source Drain Current Diode Current Source-Drain V "20 TC = 25 _C TA = 25 _C IDM TC = 25 _C TA = 25 _C IS –3.9 20 –25 2.6 –2.8 1.7b, c –1.7b, c Pulsed Source-Drain Current ISM 20 –25 Single Pulse Avalanche Current IAS 11 15 EAS 6.1 11 3.1 3.4 Single Pulse Avalanche Energy L=0 0.1 1 mH TC= 25 _C TC= 70 _C Maximum Power Dissipation TA = 25 _C PD TA = 70 _C Operating Junction and Storage Temperature Range Unit 2 2.2 2b, c 2b, c 1.3b, c A mJ W 1.3b, c TJ, Tstg _C –55 to 150 THERMAL RESISTANCE RATINGS N-Channel Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) P-Channel Symbol Typ Max Typ Max t v 10 sec RthJA 55 62.5 53 62.5 Steady-State RthJF 33 40 30 37 Unit _C/W Notes a. Based on TC = 25 _C. b. Surface Mounted on 1” x 1” FR4 Board. c. t = 10 sec. d. Maximum under steady state conditions is 110 _C/W for N-channel and P-channel. Document Number: 73624 S–52667—Rev. A, 02-Jan-06 www.vishay.com 1 Si4559ADY New Product Vishay Siliconix SPECIFICATIONS (TJ = 25 _C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typa Max Unit Static Drain Source Breakdown Voltage Drain-Source VDS Temperature Coefficient VGS(th) GS( h) Temperature Coefficient Gate Threshold Voltage Gate Body Leakage Gate-Body Zero Gate Voltage Drain Current On State Drain Currentb On-State Drain Source On Drain-Source On-State State Resistanceb Forward Transconductanceb VDS DVDS/TJ DVGS(th) GS( h)/TJ VGS(th) GS( h) IGSS IDSS ID(on) D( ) rDS(on) DS( ) gfs f VGS = 0 V, ID = 250 mA N-Ch 60 VGS = 0 V, ID = –250 mA P-Ch –60 ID = 250 mA V N-Ch 55 ID = –250 mA P-Ch –50 ID = 250 mA N-Ch –6 IID = –250 mA P-Ch 4 VDS = VGS, ID = 250 mA N-Ch N Ch 1 3 VDS = VGS, ID = –250 mA P-Ch –1 –3 VDS = 0 V, V VGS = "20 V mV N-Ch N Ch 100 P-Ch –100 VDS = 60 V, VGS = 0 V N-Ch N Ch 1 VDS = –60 V, VGS = 0 V P-Ch –1 VDS = 60 V, VGS = 0 V, TJ = 55 _C N-Ch N Ch 10 VDS = –60 V, VGS = 0 V, TJ = 55 _C P-Ch V nA mA –10 VDS w 5 V, VGS = 10 V N-Ch N Ch 20 VDS p –5 V, VGS = –10 V P-Ch –25 VGS = 10 V, ID = 4.3 A N-Ch N Ch 0.046 0.058 VGS = –10 V, ID = –3.1 A P-Ch 0.1 0.120 VGS = 4.5 V, ID = 3.9 A N-Ch N Ch 0.059 0.072 VGS = –4.5 V, ID = –0.2 A 0.150 A P-Ch 0.126 VDS = 15 V, ID = 4.3 A N-Ch N Ch 15 VDS = –15 V, ID = –3.1 A P-Ch 8.5 W S Dynamica Input Capacitance Output Capacitance Ciss i Coss N-Channel VDS = 15 V, VGS = 0 V, f = 1 MHz P Channel P-Channel VDS = – 15 V, VGS = 0 V, f = 1 MHz Reverse Transfer Capacitance Total Gate Charge Crss Qg Gate Resistance Rg www.vishay.com 2 75 P-Ch 95 N-Ch N Ch 40 P-Ch 60 pF N-Ch 13 20 P-Ch 14.5 22 N-Ch N Ch 6 9 P-Ch 8 12 N-Ch N Ch 2.3 P-Ch 2.2 N-Ch N Ch 2.6 P-Ch 3.7 P-Channel P Channel VDS = – 30 V, VGS = –4.5 V, ID = –3.1 A Qgdd 650 N-Ch N Ch VDS = 30 V, VGS = 10 V, ID = 4.3 A Qgs Gate Drain Charge Gate-Drain 665 VDS = –30 V, VGS = –10 V, ID = –3.1 A N-Channel VDS = 30 V, VGS = 4.5 V, ID = 4.3 A Gate Source Charge Gate-Source N-Ch P-CH f = 1 MHz nC N-Ch N Ch 2 3 P-Ch 14 20 W Document Number: 73624 S–52667—Rev. A, 02-Jan-06 Si4559ADY New Product Vishay Siliconix SPECIFICATIONS (TJ = 25 _C UNLESS OTHERWISE NOTED) Parameter Symbol Typa Max N-Ch N Ch 15 25 P-Ch 30 45 N-Ch N Ch 65 100 P-Ch 70 105 N-Ch N Ch 15 25 P-Ch 40 60 N-Ch N Ch 10 15 P-Ch 30 45 N-Ch N Ch 10 15 Test Condition Min Unit Dynamica Turn On Delay Time Turn-On Rise Time Turn Off Delay Time Turn-Off Fall Time Turn On Delay Time Turn-On Rise Time Turn Off Delay Time Turn-Off Fall Time td(on) d( ) tr td(off) d( ff) N-Channel N Channel VDD = 30 V, RL = 8.8 W ID ^ 3.4 A, VGEN = 4.5 V, Rg = 1 W P-Channel P Channel VDD = –30 V, RL = 12.5 W ID ^ –2 –2.4 4A A, VGEN = –4.5 –4 5 V, V Rg = 1 W tf td(on) d( ) tr td(off) d( ff) N-Channel N Channel VDD = 30 V, RL = 8.8 W ID ^ 3.4 A, VGEN = 10 V, Rg = 1 W P-Channel P Channel VDD = –30 V, RL = 12.5 W ID ^ –2 –2.4 4 A, A VGEN = –10 V V, Rg =1 W tf P-Ch 10 15 N-Ch N Ch 15 25 P-Ch 13 20 N-Ch N Ch 20 30 P-Ch 35 55 N-Ch N Ch 10 15 P-Ch 30 45 ns Drain-Source Body Diode Characteristics Continuous Source Source-Drain Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage IS TC = 25 _C ISM VSD N-Ch 20 P-Ch –25 N-Ch 0.8 1.2 P-Ch –0.8 –1.2 N-Ch 30 60 P-Ch 30 50 N-Ch 32 50 P-Ch 35 60 N-Ch 25 P-Ch 16 N-Ch 5 P-Ch 14 Body Diode Reverse Recovery Charge Qrr N-Channel IF = 1.7 A, di/dt = 100 A/ms, TJ = 25 _C ta P-Channel P Channel IF = –2 A, di/dt = –100 A/ms, TJ = 25 _C tb –2.8 IS = –2 A trr Reverse Recovery Rise Time 2.6 P-Ch IS = 1.7 A Body Diode Reverse Recovery Time Reverse Recovery Fall Time N-Ch A V ns nC ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 73624 S–52667—Rev. A, 02-Jan-06 www.vishay.com 3 Si4559ADY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED) NĆCHANNEL Output Characteristics Transfer Characteristics 20 5 VGS = 10 thru 4 V 16 I D – Drain Current (A) I D – Drain Current (A) 18 14 12 10 8 6 4 4 3 2 TC = 125 _C 1 25 _C 3V 2 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 –55 _C 0 0.0 2.0 0.5 VDS – Drain-to-Source Voltage (V) 1.0 1.5 2.5 3.0 3.5 VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 1000 0.080 0.075 800 0.070 C – Capacitance (pF) rDS(on) – On-Resistance (mW) 2.0 0.065 VGS = 4.5 V 0.060 0.055 VGS = 10 V Ciss 600 400 0.050 200 Coss 0.045 0.040 Crss 0 0 2 4 6 8 10 12 14 16 18 20 0 10 Gate Charge 40 50 60 On-Resistance vs. Junction Temperature 10 2.0 VDS = 30 V ID = 4.3 A 1.8 8 rDS(on) – On-Resistance (Normalized) V GS – Gate-to-Source Voltage (V) 30 VDS – Drain-to-Source Voltage (V) ID – Drain Current (A) 6 4 VGS = 10 V ID = 4.3 A 1.6 1.4 1.2 1.0 2 0.8 0 0 3 6 9 Qg – Total Gate Charge (nC) www.vishay.com 4 20 12 15 0.6 –50 –25 0 25 50 75 100 125 150 TJ – Junction Temperature (_C) Document Number: 73624 S–52667—Rev. A, 02-Jan-06 Si4559ADY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED) NĆCHANNEL Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage rDS(on) – Drain-to-Source On-Resistance (mW) 20 TJ = 150 _C I S – Source Current (A) 10 TJ = 25 _C 0.11 0.10 0.09 0.08 0.07 ID = 4.3 A 0.06 0.05 0.04 1 0.0 0.12 0.2 0.4 0.6 1.0 0.8 1.2 0 1.4 2 VSD – Source-to-Drain Voltage (V) 4 6 8 10 VGS – Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power, Junction-to-Ambient 3.0 25 2.8 20 ID = 250 mA 2.4 Power (W) VGS(th) (V) 2.6 2.2 15 10 2.0 1.8 5 1.6 1.4 –50 –25 0 25 50 75 100 125 0 0.01 150 0.1 TJ – Temperature (_C) 1 10 100 1000 Time (sec) Safe Operating Area 100 *rDS(on) Limited I D – Drain Current (A) 10 100 ms 1 ms 1 10 ms 100 ms 1s 10 s dc 0.1 0.01 TA = 25 _C Single Pulse 0.001 0.1 1 10 100 VDS – Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified Document Number: 73624 S–52667—Rev. A, 02-Jan-06 www.vishay.com 5 Si4559ADY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED) NĆCHANNEL Current De-Rating* Power De-Rating 6 4.0 3.5 5 Power Dissipation (W) ID – Drain Current (A) 3.0 4 3 2 2.5 2.0 1.5 1.0 1 0.5 0 0.0 25 50 75 100 125 150 TC – Case Temperature (_C) 0 25 50 75 100 125 150 TC – Case Temperature (_C) Single Pulse Avalanche Capability IC – Peak Avalanche Current (A) 100 10 TA + 1 0.000001 L @ ID BV * VDD 0.00001 0.0001 0.001 TA – Time In Avalanche (sec) *The power dissipation PD is based on TJ(max) = 150 _C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 73624 S–52667—Rev. A, 02-Jan-06 Si4559ADY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED) NĆCHANNEL Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 90 _C/W 0.02 3. TJM – TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10–4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 Document Number: 73624 S–52667—Rev. A, 02-Jan-06 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 7 Si4559ADY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED) PĆCHANNEL Output Characteristics Transfer Characteristics 25 25 VGS = 10 thru 5 V 20 I D – Drain Current (A) I D – Drain Current (A) 20 15 4V 10 5 15 10 TC = 125 _C 5 25 _C 3V 0 –55 _C 0 0 1 2 3 4 5 6 7 8 0 1 VDS – Drain-to-Source Voltage (V) 2 3 4 5 6 50 60 VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 1000 0.40 C – Capacitance (pF) rDS(on) – On-Resistance (W) 0.35 0.30 0.25 0.20 VGS = 4.5 V VGS = 10 V 0.15 800 Ciss 600 400 0.10 200 Coss 0.05 0.00 Crss 0 0 5 10 15 20 25 0 10 ID – Drain Current (A) 30 40 VDS – Drain-to-Source Voltage (V) Gate Charge On-Resistance vs. Junction Temperature 10 2.2 VDS = 30 V ID = 3.1 A 2.0 VGS = 10 V ID = 3.1 A 8 rDS(on) – On-Resistance (Normalized) V GS – Gate-to-Source Voltage (V) 20 6 4 1.8 1.6 1.4 1.2 1.0 2 0.8 0 0 3 6 9 Qg – Total Gate Charge (nC) www.vishay.com 8 12 15 0.6 –50 –25 0 25 50 75 100 125 150 175 TJ – Junction Temperature (_C) Document Number: 73624 S–52667—Rev. A, 02-Jan-06 Si4559ADY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED) PĆCHANNEL Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.40 20 0.35 10 rDS(on) – On-Resistance (W) I S – Source Current (A) TJ = 150_C TJ = 25_C 1 0.0 0.30 0.25 ID = 3.1 A 0.20 0.15 0.10 0.05 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 VSD – Source-to-Drain Voltage (V) 4 8 10 Single Pulse Power 50 0.4 40 ID = 250 mA Power (W) V GS(th) Variance (V) Threshold Voltage 0.6 0.2 0.0 30 20 10 –0.2 –0.4 –50 6 VGS – Gate-to-Source Voltage (V) –25 0 25 50 75 100 125 150 0 10–3 10–2 10–1 TJ – Temperature (_C) 1 10 100 600 Time (sec) Safe Operating Area, Junction-to-Case 100 IDM Limited I D – Drain Current (A) 10 P(t) = 0.0001 1 P(t) = 0.001 ID(on) Limited 0.1 0.01 0.1 Document Number: 73624 S–52667—Rev. A, 02-Jan-06 Limited by rDS(on) P(t) = 0.01 P(t) = 0.1 TA = 25 _C Single Pulse BVDSS Limited P(t) = 1 P(t) = 10 dc 1 10 100 VDS – Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified www.vishay.com 9 Si4559ADY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED) PĆCHANNEL Current De-Rating* 4.0 3.5 ID – Drain Current (A) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 25 50 75 100 125 150 TC – Case Temperature (_C) Single Pulse Avalanche Capability Power De-Rating, Junction-to-Foot 100 4.5 IC – Peak Avalanche Current (A) 4.0 Power Dissipation (W) 3.5 3.0 2.5 2.0 1.5 1.0 10 TA + L @ ID BV * VDD 0.5 0.0 0 25 50 75 100 TC – Case Temperature (_C) 125 150 1 0.000001 0.00001 0.0001 0.001 TA – Time In Avalanche (sec) *The power dissipation Pb is based on TJ(max) = 150 _C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 10 Document Number: 73624 S–52667—Rev. A, 02-Jan-06 Si4559ADY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED) PĆCHANNEL Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 85 _C/W 3. TJM – TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10–4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73624. Document Number: 73624 S–52667—Rev. A, 02-Jan-06 www.vishay.com 11 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1