NTGD4161P D

NTGD4161P
Power MOSFET
−30 V, −2.3 A, Dual P−Channel, TSOP−6
Features
•
•
•
•
•
Fast Switching Speed
Low Gate Charge
Low RDS(on)
Independently Connected Devices to Provide Design Flexibility
This is a Pb−Free Device
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V(BR)DSS
RDS(on) Max
160 mW @ −10 V
Applications
• Load Switch
• Battery Protection
• Portable Devices Like PDAs, Cellular Phones and Hard Drives
−30 V
280 mW @ −4.5 V
P−Channel
(MOSFET1)
D1
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
−30
V
Gate−to−Source Voltage
VGS
±20
V
ID
−2.1
A
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
TA = 25°C
t≤5s
TA = 25°C
Steady
State
TA = 25°C
TA = 85°C
Steady
State
Power Dissipation (Note 2)
Pulsed Drain Current
G1
G2
−2.3
PD
S1
W
1.1
ID
TA = 85°C
TA = 25°C
tp = 10 ms
1
0.6
W
IDM
−10
A
TJ,
TSTG
−55 to
150
°C
Source Current (Body Diode)
IS
−0.8
A
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TL
260
°C
Operating Junction and Storage Temperature
D1 S1 D2
A
−1.5
−1.1
PD
S2
MARKING DIAGRAM
1.3
TA = 25°C
D2
−1.5
t≤5s
Continuous Drain
Current (Note 2)
P−Channel
(MOSFET2)
S8 MG
G
TSOP−6
CASE 318G
STYLE 13
S8
M
G
G1 S2 G2
= Specific Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
THERMAL RESISTANCE RATINGS
Parameter
Junction−to−Ambient − Steady State (Note 1)
Symbol
Max
Unit
RqJA
115
°C/W
*Date Code orientation may vary depending upon
manufacturing location.
ORDERING INFORMATION
Junction−to−Ambient − Steady State (Note 2)
225
Junction−to−Ambient − t ≤ 5 s (Note 1)
95
Device
Package
Shipping †
40
NTGD4161PT1G
TSOP−6
(Pb−Free)
3000 / Tape & Reel
Junction−to−Case − Steady State (Note 1)
RqJC
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 1 in. pad size
(Cu. area = 1.2 in2 [1 oz] including traces)
2. When surface mounted to an FR4 board using minimum recommended
pad size (Cu. area = 0.047 in2)
© Semiconductor Components Industries, LLC, 2006
September, 2006 − Rev. 1
1
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NTGD4161P/D
NTGD4161P
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise stated)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = −250 mA
−30
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
22
VGS = 0 V,
VDS = −24 V
mV/°C
TJ = 25°C
−1.0
TJ = 125°C
−10
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = −250 mA
Gate−to−Source Leakage Current
V
mA
±100
nA
−3.0
V
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Gate Threshold Temperature
Coefficient
Drain−to−Source On Resistance
VGS(TH)/TJ
RDS(on)
Forward Transconductance
gFS
−1.0
−1.9
−4.7
mV/°C
VGS = −10 V, ID = −2.1 A
105
160
VGS = −4.5 V, ID = −1.6 A
190
280
VDS = −5.0 V, ID = −2.1 A
2.7
S
281
pF
mΩ
CHARGES AND CAPACITANCES
Input Capacitance
CISS
VDS = −15 V, f = 1.0 MHz,
VGS = 0 V
Output Capacitance
COSS
50
Reverse Transfer Capacitance
CRSS
28
Total Gate Charge
QG(TOT)
5.6
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
0.90
td(on)
7.1
nC
7.6
14
ns
9.2
23
12.5
20
4.5
12
TJ = 25°C
−0.79
−1.2
TJ = 125°C
−0.65
VGS = −10 V, VDS = −5.0 V,
ID = −2.1A
0.65
1.2
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(off)
VGS = −4.5 V, VDD = −15 V,
ID = −1.0 A, RG = 6.0 Ω
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = −0.8 A
V
8.0
VGS = 0 V, dIS/dt = 100 A/ms,
IS = −0.8 A
QRR
5.7
3
3. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
ns
2.3
nC
NTGD4161P
TYPICAL PERFORMANCE CURVES
−10 V
−4.5 V
5
TJ = 25°C
4
−ID, DRAIN CURRENT (A)
−ID, DRAIN CURRENT (A)
5
−4 V
3
−3.8 V
−3.6 V
2
−3.4 V
−3.2 V
1
0
−3 V
−2.8 V
0
1
2
3
4
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VDS ≥ −3 V
4
3
2
150°C
1
25°C
−40°C
0
5
1
2
3
4
−VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
0.5
ID = −2.1 A
0.4
0.3
TJ = 125°C
0.2
TJ = 25°C
0.1
0
3
4
5
6
7
8
9
10
−VGS, GATE−TO−SOURCE VOLTAGE (V)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
Figure 1. On−Region Characteristics
0.4
TJ = 25°C
0.35
0.3
VGS = −4.5 V
0.25
0.2
0.15
0.1
VGS = −10 V
0.05
0
0
1
2
3
4
5
6
−ID, DRAIN CURRENT (A)
Figure 3. On−Resistance versus
Gate−to−Source Voltage
Figure 4. On−Resistance versus Drain Current
and Temperature
0.3
1000
VGS = 0 V
ID = −1.6 A
VGS = −4.5 V
0.2
ID = −2.1 A
VGS = −10 V
0.1
0.0
−50
−IDSS, LEAKAGE(nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE
5
TJ = 150°C
100
TJ = 125°C
10
−25
0
25
50
75
100
125
150
0
TJ, JUNCTION TEMPERATURE (°C)
5
10
15
20
25
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. On−Resistance Variation with
Temperature
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3
30
NTGD4161P
TYPICAL PERFORMANCE CURVES
250
CISS
−VGS, GATE−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
300
TJ = 25°C
VGS = 0 V
200
150
100
COSS
50
CRSS
0
0
5
10
15
20
25
10
10
QT
8
8
VGS
6
6
QGS
4
QGD
2
2
ID = −2.1 A
TJ = 25°C
VDS
0
0
30
1
DRAIN−TO−SOURCE VOLTAGE (V)
2
3
4
0
6
5
QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
100
0.8
VGS = −10 V
Single Pulse
TA = 25°C
VGS = 0 V
0.7
−ID, DRAIN CURRENT (A)
−IS, SOURCE CURRENT (A)
4
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
350
0.6
0.5
TJ = 150°C
0.4
0.3
TJ = 125°C
0.2
10
100 ms
1 ms
1
10 ms
0.1
RDS(on) Limit
Thermal Limit
Package Limit
TJ = 25°C
0.1
0
0.3
TJ = −40°C
0.4
0.5
0.6
0.7
0.8
0.9
dc
0.01
1.0
0.1
1
10
100
−VSD, SOURCE−TO−DRAIN VOLTAGE (V)
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 9. Diode Forward Voltage versus
Current
Figure 10. Maximum Rated Forward Biased
Safe Operating Area
RqJA, EFFECTIVE TRANSIENT THERMAL
RESPONSE (NORMALIZED)
1.0
0.5
0.2
0.1 0.1
0.05
0.02
0.01 0.01
0.001
1E−06
Single Pulse
1E−05
1E−04
1E−03
1E−02
1E−01
t, time (s)
Figure 11. FET Thermal Response
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4
1E+00
1E+01
1E+02
1E+03
NTGD4161P
PACKAGE DIMENSIONS
TSOP−6
CASE 318G−02
ISSUE S
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
D
6
HE
1
5
4
2
3
E
b
e
q
c
A
0.05 (0.002)
L
A1
SOLDERING FOOTPRINT*
DIM
A
A1
b
c
D
E
e
L
HE
q
MIN
0.90
0.01
0.25
0.10
2.90
1.30
0.85
0.20
2.50
0°
MILLIMETERS
NOM
MAX
1.00
1.10
0.06
0.10
0.38
0.50
0.18
0.26
3.00
3.10
1.50
1.70
0.95
1.05
0.40
0.60
2.75
3.00
10°
−
MIN
0.035
0.001
0.010
0.004
0.114
0.051
0.034
0.008
0.099
0°
INCHES
NOM
0.039
0.002
0.014
0.007
0.118
0.059
0.037
0.016
0.108
−
MAX
0.043
0.004
0.020
0.010
0.122
0.067
0.041
0.024
0.118
10°
STYLE 13:
PIN 1. GATE 1
2. SOURCE 2
3. GATE 2
4. DRAIN 2
5. SOURCE 1
6. DRAIN 1
2.4
0.094
1.9
0.075
0.95
0.037
0.95
0.037
0.7
0.028
1.0
0.039
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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NTGD4161P/D