BSD 223P Preliminary data OptiMOS-P Small-Signal-Transistor Feature Product Summary • Dual P-Channel VDS -20 V • Enhancement mode RDS(on) 1.2 Ω • Super Logic Level (2.5 V rated) ID -0.39 A • 150°C operating temperature SOT-363 4 • Avalanche rated 5 6 • dv/dt rated 2 3 1 VPS05604 MOSFET1: 1,2,6 MOSFET2: 3,4,5 Type Package Ordering Code Marking BSD 223P SOT-363 Q67042-S4059 X1s Gate pin 2,5 Drain pin 6,3 Source pin 1,4 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Value A TA=25°C -0.39 TA=70°C -0.31 Pulsed drain current ID puls Unit -1.56 TA=25°C EAS 1.4 mJ dv/dt -6 kV/µs Gate source voltage VGS ±12 V Power dissipation Ptot 0.25 W -55... +150 °C Avalanche energy, single pulse ID =-0.39 A , VDD =-10V, RGS =25Ω Reverse diode dv/dt IS =-0.39A, VDS =-16V, di/dt=200A/µs, Tjmax =150°C TA=25°C Operating and storage temperature Tj , Tstg IEC climatic category; DIN IEC 68-1 55/150/56 Page 1 2002-07-04 BSD 223P Preliminary data Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - soldering point RthJS - - 180 Thermal resistance, junction - ambient, leaded RthJA - - 500 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS -20 - - VGS(th) -0.6 -0.9 -1.2 Static Characteristics Drain-source breakdown voltage V VGS =0, ID=-250µA Gate threshold voltage, VGS = VDS ID =-1.5µA Zero gate voltage drain current µA IDSS VDS =-20V, VGS =0, Tj =25°C - -0.1 -1 VDS =-20V, VGS =0, Tj =150°C - -10 -100 IGSS - -10 -100 nA RDS(on) - 1.27 2.1 Ω RDS(on) - 0.7 1.2 Gate-source leakage current VGS =-12V, VDS =0 Drain-source on-state resistance VGS =-2.5V, ID =-0.29A Drain-source on-state resistance VGS =-4.5, ID =-0.39A Page 2 2002-07-04 BSD 223P Preliminary data Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 0.35 0.7 - S pF Dynamic Characteristics Transconductance gfs çVDS ç≥2*çIDç*RDS(on)max ID =-0.31A Input capacitance Ciss VGS =0, VDS =-15V, - 45 56 Output capacitance Coss f=1MHz - 21 26 Reverse transfer capacitance Crss - 17 22 Turn-on delay time td(on) VDD =-10V, VGS =-4.5V, - 3.8 5.7 Rise time tr ID =-0.39A, RG=6Ω - 5 7.5 Turn-off delay time td(off) - 5.1 7.6 Fall time tf - 3.2 4.8 - -0.04 - -0.4 -0.5 - -0.5 -0.62 V(plateau) VDD =-10V, ID =-0.39A - -2.2 -2.7 IS - - -0.39 A - - -1.56 -1.33 V ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =-10V, ID =-0.39A VDD =-10V, ID =-0.39A, -0.05 nC VGS =0 to -4.5V Gate plateau voltage V Reverse Diode Inverse diode continuous TA=25°C forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD VGS =0, IF=-0.39 - -1 Reverse recovery time trr VR =-10V, |IF | = |lD |, - 7.6 9.5 ns Reverse recovery charge Qrr diF /dt=100A/µs - 1.1 1.4 nC Page 3 2002-07-04 BSD 223P Preliminary data 1 Power dissipation 2 Drain current Ptot = f (TA ) ID = f (TA ) parameter: |VGS |≥ 4.5 V BSD 223P -0.42 0.28 W A 0.24 -0.36 0.22 -0.32 BSD 223P -0.28 0.18 ID Ptot 0.2 -0.24 0.16 0.14 -0.2 0.12 -0.16 0.1 -0.12 0.08 0.06 -0.08 0.04 -0.04 0.02 0 0 20 40 60 80 100 120 °C 0 0 160 20 40 60 80 100 120 TA 160 TA 3 Safe operating area 4 Transient thermal impedance ID = f ( VDS ) ZthJA = f (tp ) parameter : D = 0 , TA = 25 °C parameter : D = tp /T -10 °C 1 BSD 223P 10 3 BSD 223P K/W A 10 2 = ID V DS -10 0 Z thJA /I D tp = 390.0µs R DS ( on ) 1 ms 10 1 10 0 D = 0.50 0.20 -10 -1 10 10 ms -1 0.10 0.05 0.02 10 -2 0.01 single pulse -10 -2 -10 -1 -10 0 DC 1 -10 V -10 2 VDS 10 -3 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Page 4 2002-07-04 BSD 223P Preliminary data 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS ) RDS(on) = f (ID ) parameter: Tj =25°C parameter: VGS 0.7 4 3V 4V A 4.5V 6V 7V 8V 0.5 10V RDS(on) Ω -I D 2.5V 3 2.5 0.4 2 2.2V 2.5V 3V 4V 4.5V 6V 7V 8V 10V 2.2V 0.3 1.5 0.2 1 0.1 0 0 0.5 0.3 0.6 V 0.9 0 0 1.5 0.1 0.2 0.3 0.4 0.5 A -VDS 0.7 -ID 7 Typ. transfer characteristics 8 Typ. forward transconductance ID= f ( VGS ); |VDS |≥ 2 x |ID| x RDS(on)max gfs = f(ID) parameter: Tj = 25 °C parameter: Tj = 25 °C 0.7 1.1 S A 0.9 0.8 g fs -I D 0.5 0.4 0.7 0.6 0.5 0.3 0.4 0.2 0.3 0.2 0.1 0.1 0 0 0.5 1 1.5 2 V 0 0 3 -VGS 0.1 0.2 0.3 0.4 0.5 A 0.7 -ID Page 5 2002-07-04 BSD 223P Preliminary data 9 Drain-source on-resistance 10 Typ. gate threshold voltage RDS(on) = f(Tj ) VGS(th) = f (Tj) parameter: ID = -0.39 A, VGS = -4.5 V parameter: VGS = VDS 1.6 1.6 V 98% - VGS(th) RDS(on) Ω 1.2 1 98% 1.2 1 typ. typ. 0.8 0.8 0.6 0.6 0.4 0.4 0.2 0.2 0 -60 -20 20 60 °C 100 2% 0 -60 160 -20 20 60 100 °C 160 Tj Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD ) parameter: VGS =0, f=1 MHz parameter: Tj 10 2 -10 1 BSD 223P A Ciss C IF -10 0 pF Coss -10 -1 Tj = 25 °C typ Tj = 150 °C typ Crss Tj = 25 °C (98%) Tj = 150 °C (98%) 10 1 0 2 4 6 8 10 12 V 15 -VDS -10 -2 0 -0.4 -0.8 -1.2 -1.6 -2 -2.4 V -3 VSD Page 6 2002-07-04 BSD 223P Preliminary data 13 Typ. avalanche energy 14 Typ. gate charge EAS = f (Tj ), par.: ID = -0.39 A VGS = f (QGate ) VDD = -10 V, RGS = 25 Ω parameter: ID = -0.39 A pulsed; Tj = 25 °C 1.4 -16 BSD 223P V mJ -12 EAS VGS 1 -10 0.8 -8 20% 0.6 -6 50% 80% 0.4 -4 0.2 -2 0 20 40 60 80 100 120 °C 160 Tj 0 0 0.2 0.4 0.6 0.8 1 nC 1.3 |QGate | 15 Drain-source breakdown voltage V(BR)DSS = f (Tj ) -24.5 BSD 223P V V (BR)DSS -23.5 -23 -22.5 -22 -21.5 -21 -20.5 -20 -19.5 -19 -18.5 -18 -60 -20 20 60 100 °C 180 Tj Page 7 2002-07-04 Preliminary data BSD 223P Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. 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