SiE812DF_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1]. When implemented in P-Spice, these values have matching characteristic curves to the Single Pulse Transient Thermal Impedance curves for the MOSFET. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. Note: For a detailed explanation of implementing these values in P-SPICE, refer to Application Note AN609 Thermal Simulations Of Power MOSFETs on P-SPICE Platform. R-C THERMAL MODEL FOR TANK CONFIGURATION R-C VALUES FOR TANK CONFIGURATION Thermal Resistance (°C/W) Junction to Ambient Case Drain Top Case Source RT1 800.8191 m 13.7052 m 239.2233 m RT2 7.3171 516.9776 m 2.4371 RT3 10.5922 286.2836 m 21.5624 m RT4 49.1350 182.6087 m 4.3831 m Thermal Capacitance (Joules/°C) Junction to Ambient Case Drain Top Case Source CT1 10.0497 m 253.9448 u 1.7223 m CT2 588.1963 m 31.9162 m 27.9777 m CT3 47.1217 m 69.2346 m 1.0998 CT4 1.4789 3.3324 m 6.1924 m This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits. Document Number: 69504 Revision: 14-Aug-07 www.vishay.com 1 SiE812DF_RC Vishay Siliconix R-C THERMAL MODEL FOR FILTER CONFIGURATION R-C VALUES FOR FILTER CONFIGURATION Thermal Resistance (°C/W) Junction to Ambient Case Drain Top Case Source RF1 8.6804 311.1249 m 290.1786 m RF2 5.8765 964.2920 n 1.2842 RF3 5.9897 5.0643 m 1.0355 RF4 47.2176 679.7321 m 93.5467 m Junction to Ambient Case Drain Top CF1 25.1275 m 3.2342 m 1.6895 m CF2 145.2098 m 4.8515 m 25.2933 m CF3 17.5646 m 15.5525 m 2.7409 m CF4 1.2744 2.8720 m 277.7597 m Thermal Capacitance (Joules/°C) Case Source Note: NA indicates not applicable Reference: [1] "A Simple Method of Generating Thermal Models for a Power MOSFET" by Wharton McDaniel and Kandarp Pandya, IEEE / SEMITHERM 2002 www.vishay.com 2 Document Number: 69504 Revision: 14-Aug-07 SiE812DF_RC Vishay Siliconix Document Number: 69504 Revision: 14-Aug-07 www.vishay.com 3 SiE812DF_RC Vishay Siliconix www.vishay.com 4 Document Number: 69504 Revision: 14-Aug-07