Si4808DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 7.5 0.030 at VGS = 4.5 V 6.5 • Halogen-free According to IEC 61249-2-21 Definition • LITTLE FOOT® Plus • Compliant to RoHS directive 2002/95/EC SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 30 0.50 V at 1.0 A 2.0 D1 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Schottky Diode G1 G2 Top View S1 S2 N-Channel MOSFET N-Channel MOSFET Ordering Information: Si4808DY-T1-E3 (Lead (Pb)-free) Si4808DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C Continuous Source Current (Diode Conduction)a 5.7 6.0 4.6 TA = 70 °C PD 1.7 0.9 2.0 1.1 1.3 0.7 TJ, Tstg Operating Junction and Storage Temperature Range A 30 IS TA = 25 °C V 7.5 IDM Pulsed Drain Current Maximum Power Dissipationa ID Unit W - 55 to 150 °C THERMAL RESISTANCE RATINGS MOSFET Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t ≤ 10 s Steady-State Steady-State RthJA RthJC Schottky Typ. Max. Typ. Max. 52 62.5 53 62.5 93 110 93 110 35 40 35 40 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. Document Number: 71157 S09-0867-Rev. C, 18-May-09 www.vishay.com 1 Si4808DY Vishay Siliconix MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VGS(th) VDS = VGS, ID = 250 µA 0.8 IGSS VDS = 0 V, VGS = ± 20 V Typ.a Max. Unit Static Gate Threshold Voltage Gate-Body Leakage VDS = 24 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 24 V, VGS = 0 V, TJ = 85 °C On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb Diode Forward Voltageb ID(on) ± 100 Ch-1 1 Ch-2 100 Ch-1 15 Ch-2 VDS = 5 V, VGS = 10 V RDS(on) gfs VSD V µA 2000 20 A VGS = 10 V, ID = 7.5 A 0.018 0.022 VGS = 4.5 V, ID = 6.5 A 0.024 0.030 VDS = 15 V, ID = 7.5 A 22 IS = 1 A, VGS = 0 V nA Ω S Ch-1 0.8 1.2 Ch-2 0.47 0.5 13 20 V Dynamica Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time VDS = 15 V, VGS = 10 V, ID = 7.5 A 0.5 td(on) tr td(off) Fall Time tf Source-Drain Reverse Recovery Time trr nC 2 2.7 3.2 8 VDD = 15 V, RL = 15 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω IF = 1.7 A, dI/dt = 100 A/µs Ω 16 10 20 21 40 10 20 Ch-1 40 80 Ch-2 32 70 ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Forward Voltage Drop VF Maximum Reverse Leakage Current Irm Junction Capacitance CT Test Conditions Typ. Max. IF = 1.0 A Min. 0.47 0.50 IF = 1.0 A, TJ = 125 °C 0.36 0.42 VR = 30 V 0.004 0.100 VR = 30 V, TJ = 100 °C 0.7 10 VR = - 30 V, TJ = 125 °C 3.0 20 VR = 10 V 50 Unit V mA pF Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 71157 S09-0867-Rev. C, 18-May-09 Si4808DY Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 20 VGS = 10 V thru 4 V 3V 16 I D - Drain Current (A) I D - Drain Current (A) 16 12 8 12 8 TC = 125 °C 4 4 25 °C 2V - 55 °C 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 0.5 1.0 2.0 2.5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.040 1000 0.032 800 VGS = 4.5 V 0.024 VGS = 10 V 0.016 3.0 Ciss 600 400 Coss Crss 200 0.008 0 0.000 0 4 8 12 16 0 20 6 12 18 24 30 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current Capacitance 1.6 10 VGS = 10 V ID = 7.5 A VDS = 15 V ID = 7.5 A 1.4 8 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 1.5 VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0 0.0 6 4 1.2 1.0 0.8 2 0 0 3 6 9 Qg - Total Gate Charge (nC) Gate Charge Document Number: 71157 S09-0867-Rev. C, 18-May-09 12 15 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si4808DY Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.04 20 ID = 7.5 A R DS(on) - On-Resistance (Ω) TJ = 150 °C I S - Source Current (A) 10 TJ = 25 °C 0.03 0.02 0.01 0.00 1 0.0 0.2 0.4 0.6 0.8 1.0 0 1.2 2 6 8 10 On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 0.4 50 0.2 40 ID = 250 µA 0.0 Power (W) V GS(th) Variance (V) 4 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) - 0.2 30 20 - 0.4 10 - 0.6 - 0.8 - 50 - 25 0 25 50 75 100 125 150 0 10 -3 10 -2 10 -1 1 10 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power 100 600 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 93 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 71157 S09-0867-Rev. C, 18-May-09 Si4808DY Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot SCHOTTKY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 10 10 I F - Forward Current (A) I R - Reverse Current (mA) TJ = 150 °C 1 30 V 0.1 24 V 0.01 TJ = 25 °C 0.001 0.0001 0 25 50 75 100 125 1 0.0 150 0.3 0.6 0.9 1.2 1.5 VF - Forward Voltage Drop (V) TJ - Temperature (°C) Forward Voltage Drop Reverse Current vs. Junction Temperature 200 C - Capacitance (pF) 160 120 80 Coss 40 0 0 6 12 18 24 30 VDS - Drain-to-Source Voltage (V) Capacitance Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71157. Document Number: 71157 S09-0867-Rev. C, 18-May-09 www.vishay.com 5 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000