IGBT - Inverter Welding

NGTB40N120SWG
IGBT - Inverter Welding
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Trench construction, and provides superior performance
in demanding switching applications, offering both low on state
voltage and minimal switching loss. The IGBT is well suited for
welding applications. Incorporated into the device is a soft and fast
co−packaged free wheeling diode with a low forward voltage.
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40 A, 1200 V
VCEsat = 2.0 V
Eoff = 1.10 mJ
Features
•
•
•
•
•
TJmax = 175°C
Soft Fast Reverse Recovery Diode
Optimized for High Speed Switching
10 ms Short Circuit Capability
These are Pb−Free Devices
C
Typical Applications
• Welding
G
ABSOLUTE MAXIMUM RATINGS
Rating
E
Symbol
Value
Unit
Collector−emitter voltage
VCES
1200
V
Collector current
@ TC = 25°C
@ TC = 100°C
IC
Pulsed collector current, Tpulse
limited by TJmax
ICM
Diode forward current
@ TC = 25°C
@ TC = 100°C
IF
Diode pulsed current, Tpulse limited
by TJmax
IFM
200
A
Gate−emitter voltage
Transient gate−emitter voltage
(Tpulse = 5 ms, D < 0.10)
VGE
$20
±30
V
Power Dissipation
@ TC = 25°C
@ TC = 100°C
PD
A
80
40
200
A
C
A
E
MARKING DIAGRAM
W
535
267
40N120S
AYWWG
10
ms
TJ
−55 to +175
°C
Storage temperature range
Tstg
−55 to +175
°C
Lead temperature for soldering, 1/8”
from case for 5 seconds
TSLD
260
°C
Operating junction temperature
range
TO−247
CASE 340AL
80
40
TSC
Short Circuit Withstand Time
VGE = 15 V, VCE = 500 V, TJ ≤ 150°C
G
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
NGTB40N120SWG
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 0
1
Package
Shipping
TO−247 30 Units / Rail
(Pb−Free)
Publication Order Number:
NGTB40N120SW/D
NGTB40N120SWG
THERMAL CHARACTERISTICS
Symbol
Value
Unit
Thermal resistance junction−to−case, for IGBT
Rating
RqJC
0.28
°C/W
Thermal resistance junction−to−case, for Diode
RqJC
0.5
°C/W
Thermal resistance junction−to−ambient
RqJA
40
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
VGE = 0 V, IC = 500 mA
V(BR)CES
1200
−
−
V
VGE = 15 V, IC = 40 A
VGE = 15 V, IC = 40 A, TJ = 175°C
VCEsat
−
−
2.00
2.40
2.40
−
V
VGE = VCE, IC = 400 mA
VGE(th)
4.5
5.5
6.5
V
Collector−emitter cut−off current, gate−
emitter short−circuited
VGE = 0 V, VCE = 1200 V
VGE = 0 V, VCE = 1200 V, TJ = 175°C
ICES
−
−
−
−
0.1
2
mA
Gate leakage current, collector−emitter
short−circuited
VGE = 20 V , VCE = 0 V
IGES
−
−
200
nA
Cies
−
7385
−
pF
Coes
−
230
−
Cres
−
140
−
Qg
−
313
−
Qge
−
61
−
Qgc
−
151
−
td(on)
−
116
−
tr
−
42
−
td(off)
−
286
−
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
Collector−emitter saturation voltage
Gate−emitter threshold voltage
Input capacitance
Output capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance
Gate charge total
Gate to emitter charge
VCE = 600 V, IC = 40 A, VGE = 15 V
Gate to collector charge
nC
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
Rise time
Turn−off delay time
Fall time
TJ = 25°C
VCC = 600 V, IC = 40 A
Rg = 10 W
VGE = 0 V/ 15V
tf
−
121
−
Eon
−
3.4
−
Turn−off switching loss
Eoff
−
1.1
−
Total switching loss
Ets
−
4.5
−
Turn−on delay time
td(on)
−
111
−
Turn−on switching loss
Rise time
Turn−off delay time
Fall time
TJ = 175°C
VCC = 600 V, IC = 40 A
Rg = 10 W
VGE = 0 V/ 15 V
tr
−
43
−
td(off)
−
304
−
ns
mJ
ns
tf
−
260
−
Eon
−
4.4
−
Turn−off switching loss
Eoff
−
2.5
−
Total switching loss
Ets
−
6.9
−
VGE = 0 V, IF = 40 A
VGE = 0 V, IF = 50 A, TJ = 175°C
VF
−
−
2.00
2.30
2.60
−
V
TJ = 25°C
IF = 40 A, VR = 400 V
diF/dt = 200 A/ms
trr
−
240
−
ns
Qrr
−
2.5
−
mc
Irrm
−
18
−
A
Turn−on switching loss
mJ
DIODE CHARACTERISTIC
Forward voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NGTB40N120SWG
TYPICAL CHARACTERISTICS
160
TJ = 25°C
140
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
160
VGE = 20 V
to 13 V
120
100
11 V
80
10 V
60
40
9V
20
7V
8V
0
0
1
2
3
4
5
7
6
VGE = 20 V
to 13 V
120
100
11 V
80
10 V
60
9V
40
8V
20
0
8
TJ = 150°C
140
7V
1
2
3
4
5
6
7
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics
Figure 2. Output Characteristics
100000
8
70
IF, FORWARD CURRENT (A)
C, CAPACITANCE (pF)
TJ = 25°C
Cies
10000
1000
Coes
100
Cres
10
1
60
TJ = 25°C
50
TJ = 150°C
40
30
20
10
0
0
10
20
30
40
50
60
70
90 100
80
0
0.5
Figure 3. Typical Capacitance
1.5
2.0
2.5
3.0
3.5
4.0
Figure 4. Diode Forward Characteristics
16
12
14
VCE = 600 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
10
VCE = 600 V
12
SWITCHING LOSS (mJ)
VGE, GATE−EMITTER VOLTAGE (V)
1.0
VF, FORWARD VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
10
8
6
4
VCE = 600 V
VGE = 15 V
IC = 40 A
2
0
0
50
100
150
200
250
300
8
Eon
6
Eoff
4
2
0
350
5
15
25
35
45
55
65
QG, GATE CHARGE (nC)
IC, COLLECTOR CURRENT (A)
Figure 5. Typical Gate Charge
Figure 6. Switching Loss vs. IC
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3
75
85
NGTB40N120SWG
TYPICAL CHARACTERISTICS
1000
IC, COLLECTOR CURRENT (A)
SWITCHING TIME (ns)
1000
td(off)
tf
td(on)
100
tr
10
VCE = 600 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
100
50 ms
10
1 ms
1
Single Nonrepetitive
Pulse TC = 25°C
Curves must be derated
linearly with increase
in temperature
0.1
0.01
5
15
25
35
45
55
65
75
100 ms
dc operation
85
1
10
100
1000
10000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
Figure 7. Switching Time vs. IC
Figure 8. Safe Operating Area
SQUARE−WAVE PEAK R(t) (°C/W)
1
RqJC = 0.28
50% Duty Cycle
0.1
20%
10%
5%
0.01
R1
Junction
R2
Rn
Case
2%
C1
0.001
1E−05
Ci (J/°C)
0.006487
0.023120
0.061163
0.092651
1.252250
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
Single Pulse
0.0001
1E−06
Cn
C2
Ri (°C/W)
0.048747
0.043252
0.051703
0.107932
0.025253
0.0001
0.01
0.001
0.1
1
ON−PULSE WIDTH (s)
Figure 9. IGBT Transient Thermal Impedance
SQUARE−WAVE PEAK R(t) (°C/W)
1
RqJC = 0.50
50% Duty Cycle
0.1
20%
10%
5%
2%
Junction R1
R2
Rn
C1
C2
Cn
0.01
Single Pulse
0.001
1E−06
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
1E−05
0.0001
0.001
0.01
ON−PULSE WIDTH (s)
Figure 10. Diode Transient Thermal Impedance
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4
Case
Ri (°C/W)
Ci (J/°C)
0.007703
0.010613
0.010097
0.032329
0.046791
0.044179
0.083870
0.000130
0.000942
0.003132
0.003093
0.006758
0.022635
0.119232
0.044938
0.703706
0.217376
0.460033
0.1
1
NGTB40N120SWG
PACKAGE DIMENSIONS
TO−247
CASE 340AL
ISSUE A
B
A
NOTE 4
E
SEATING
PLANE
0.635
M
B A
P
A
NOTE 6
E2/2
Q
E2
NOTE 4
D
S
NOTE 3
1
2
4
DIM
A
A1
b
b2
b4
c
D
E
E2
e
L
L1
P
Q
S
3
L1
NOTE 5
L
2X
b2
c
b4
3X
e
A1
b
0.25
NOTE 7
M
B A
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. SLOT REQUIRED, NOTCH MAY BE ROUNDED.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH.
MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE
DIMENSIONS ARE MEASURED AT THE OUTERMOST
EXTREME OF THE PLASTIC BODY.
5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY
L1.
6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE
TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91.
7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED
BY L1.
M
MILLIMETERS
MIN
MAX
4.70
5.30
2.20
2.60
1.00
1.40
1.65
2.35
2.60
3.40
0.40
0.80
20.30
21.40
15.50
16.25
4.32
5.49
5.45 BSC
19.80
20.80
3.50
4.50
3.55
3.65
5.40
6.20
6.15 BSC
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NGTB40N120SW/D