Si5465EDC Datasheet

Si5465EDC
Vishay Siliconix
P-Channel 12-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
--12
rDS(on) (Ω)
ID (A)
0.037 @ VGS = --4.5 V
--7.0
0.048 @ VGS = --2.5 V
--6.1
0.065 @ VGS = --1.8 V
--5.2
S
1206-8 ChipFETt
1
D
D
G
5.4 kΩ
D
D
D
D
G
S
Marking Code
LC
XX
Lot Traceability
and Date Code
D
Part #
Code
Bottom View
P-Channel MOSFET
Ordering Information: Si5465EDC-T1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Drain-Source Voltage
VDS
--12
Gate-Source Voltage
VGS
12
Continuous Drain Current (TJ = 150_C)a
TA = 25_C
TA = 85_C
Pulsed Drain Current
ID
IS
TA = 25_C
Maximum Power Dissipationa
TA = 85_C
Operating Junction and Storage Temperature Range
PD
V
--5.0
--7.0
--5.0
--3.6
IDM
Continuous Source Currenta
--20
--2.1
--1.1
2.5
1.3
1.3
0.7
TJ, Tstg
Unit
A
W
--55 to 150
Soldering Recommendations (Peak Temperature)c, d
_C
260
THERMAL RESISTANCE RATINGS
Parameter
M i
Maximum
JJunction-to-Ambient
ti t A bi ta
Maximum Junction-to-Foot (Drain)
Symbol
t ≤ 5 sec
Steady State
Steady State
RthJA
RthJF
Typical
Maximum
40
50
80
95
15
20
Unit
_C/W
C/
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. When using HBM. The MM rating is 300 V.
c. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection.
d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71360
S-21251—Rev. D, 05-Aug-02
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Si5465EDC
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
VGS(th)
VDS = VGS, ID = --1 mA
--0.45
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
1.5
VDS = --9.6 V, VGS = 0 V
mA
--1
--5
VDS = --9.6 V, VGS = 0 V, TJ = 85_C
VDS --5 V, VGS = --4.5 V
--20
A
VGS = --4.5 V, ID = --5.0 A
0.030
0.037
VGS = --2.5 V, ID = --4.5 A
0.040
0.048
VGS = --1.8 V, ID = --2 A
0.052
0.065
gfs
VDS = --5 V, ID = --5.0 A
15
VSD
IS = --1.1 A, VGS = 0 V
--0.8
--1.2
13.5
20
Forward Transconductancea
Diode Forward
VDS = 0 V, VGS = 4.5 V
rDS(on)
Voltagea
V
Ω
S
V
Dynamicb
Total Gate Charge
Qg
VDS = --6 V, VGS = --4.5 V, ID = --5.0 A
nC
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
4.5
Turn-On Delay Time
td(on)
2.5
3.5
5.7
8.0
30
40
21.5
30
Rise Time
tr
Turn-Off Delay Time
VDD = --6 V, RL = 6 Ω
ID ≅ --1 A, VGEN = --4.5 V, RG = 6 Ω
td(off)
Fall Time
2.8
tf
mS
Notes
a. Pulse test; pulse width ≤ 300 ms, duty cycle ≤ 2%.m
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
Transfer Characteristics
20
VGS = 4.5 thru 2.5 V
TC = --55_C
2V
16
I D -- Drain Current (A)
I D -- Drain Current (A)
16
12
1.5 V
8
4
0.5 V
1V
6
8
0
0
2
4
VDS -- Drain-to-Source Voltage (V)
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10
25_C
12
125_C
8
4
0
0.0
0.5
1.0
1.5
2.0
2.5
VGS -- Gate-to-Source Voltage (V)
Document Number: 71360
S-21251—Rev. D, 05-Aug-02
Si5465EDC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
3000
0.08
2500
VGS = 1.8 V
0.06
C -- Capacitance (pF)
r DS(on) -- On-Resistance ( Ω )
0.10
VGS = 2.5 V
0.04
VGS = 4.5 V
Ciss
2000
1500
1000
Coss
0.02
500
Crss
0.00
0
0
4
8
12
16
20
0
2
ID -- Drain Current (A)
Gate Charge
8
10
12
On-Resistance vs. Junction Temperature
1.6
VDS = 6 V
ID = 5.0 A
10
r DS(on) -- On-Resistance ( Ω)
(Normalized)
V GS -- Gate-to-Source Voltage (V)
6
VDS -- Drain-to-Source Voltage (V)
12
8
6
4
VGS = 4.5 V
ID = 5.0 A
1.4
1.2
1.0
0.8
2
0
0
5
10
15
20
25
0.6
--50
30
--25
Qg -- Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
25
50
75
100
125
150
On-Resistance vs. Gate-to-Source Voltage
0.30
r DS(on) -- On-Resistance ( Ω )
TJ = 150_C
1
TJ = 25_C
0.1
0.01
0.0
0
TJ -- Junction Temperature (_C)
20
10
I S -- Source Current (A)
4
0.25
0.20
ID = 5.0 A
0.15
0.10
0.05
0.00
0.2
0.4
0.6
0.8
1.0
VSD -- Source-to-Drain Voltage (V)
Document Number: 71360
S-21251—Rev. D, 05-Aug-02
1.2
0
1
2
3
4
5
6
7
8
VGS -- Gate-to-Source Voltage (V)
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Si5465EDC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
Single Pulse Power
50
40
ID = --1 mA
0.2
Power (W)
V GS(th) Variance (V)
0.3
0.1
0.0
30
20
10
--0.1
--0.2
--50
--25
0
25
50
75
100
125
0
10 --3
150
10 --2
10 --1
1
10
100
600
Time (sec)
TJ -- Temperature (_C)
Gate-Source Voltage vs. Gate Current
Gate-Source Voltage vs. Gate Current
1000
10,000
1,000
TA = 25_C
100
I GSS ( m A)
I GSS ( m A)
800
600
400
10
150_C
1
0.1
0.01
200
25_C
0.001
0
0
2
4
6
8
10
12
0.0001
0.10
VGS -- Gate-to-Source Voltage (V)
1
10
20
VGS -- Gate-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 80_C/W
0.02
3. TJM -- TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 --4
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2-4
10 --3
10 --2
10 --1
1
Square Wave Pulse Duration (sec)
10
100
600
Document Number: 71360
S-21251—Rev. D, 05-Aug-02
Si5465EDC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 --4
Document Number: 71360
S-21251—Rev. D, 05-Aug-02
10 --3
10 --2
10 --1
Square Wave Pulse Duration (sec)
1
10
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Document Number: 91000
Revision: 18-Jul-08
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