VISHAY SI5463EDC

Si5463EDC
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
--20
20
rDS(on) (Ω)
ID (A)
0.062 @ VGS = --4.5 V
--5.1
[email protected] VGS = --3.6 V
--4.9
0.085 @ VGS = --2.5 V
--4.4
0.120 @ VGS = --1.8 V
--3.7
S
1206-8 ChipFETt
1
D
D
G
5.4 kΩ
D
D
D
D
G
S
Marking Code
LB
XX
Lot Traceability
and Date Code
D
Part #
Code
Bottom View
P-Channel MOSFET
Ordering Information: Si5463EDC-T1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Drain-Source Voltage
VDS
--20
Gate-Source Voltage
VGS
12
Continuous Drain Current (TJ = 150_C)a
TA = 25_C
TA = 85_C
Pulsed Drain Current
ID
IS
TA = 25_C
Maximum Power Dissipationa
TA = 85_C
Operating Junction and Storage Temperature Range
PD
V
--3.8
--5.1
--3.7
--2.7
IDM
Continuous Source Currenta
--15
--1.9
--1.0
2.3
1.25
1.2
0.65
TJ, Tstg
Unit
A
W
--55 to 150
Soldering Recommendations (Peak Temperature)c, d
_C
260
THERMAL RESISTANCE RATINGS
Parameter
M i
Maximum
JJunction-to-Ambient
ti t A bi ta
Maximum Junction-to-Foot (Drain)
Symbol
t ≤ 5 sec
Steady State
Steady State
RthJA
RthJF
Typical
Maximum
45
55
84
100
20
25
Unit
_C/W
C/
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. When using HBM. The MM rating is 300 V
c. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection.
d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71364
S-21251—Rev. C, 05-Aug-02
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Si5463EDC
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
VGS(th)
VDS = VGS, ID = --250 mA
--0.45
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain Source On
Drain-Source
On-State
State Resistancea
Diode Forward
VDS = 0 V, VGS = 4.5 V
Voltagea
1.5
VDS = --16 V, VGS = 0 V
mA
--1
--5
VDS = --16 V, VGS = 0 V, TJ = 85_C
VDS --5 V, VGS = --4.5 V
--15
A
VGS = --4.5 V, ID = --4.0 A
0.051
0.062
VGS = --3.6 V, ID = --3.5 A
0.056
0.068
VGS = --2.5 V, ID = --3.0 A
0.070
0.085
VGS = --1.8 V, ID = --1.5 A
0.100
0.120
gfs
VDS = --5 V, ID = --4.0 A
10
VSD
IS = --1.0 A, VGS = 0 V
--0.75
--1.2
9.7
15
rDS(on)
DS( )
Forward Transconductancea
V
Ω
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
1.4
Turn-On Delay Time
td(on)
1.85
2.5
tr
3.2
4.5
1.9
2.5
3.2
4.5
Rise Time
Turn-Off Delay Time
VDS = --10 V, VGS = --4.5 V, ID = --4.0 A
VDD = --10 V, RL = 10 Ω
ID ≅ --1 A, VGEN = --4.5 V, RG = 6 Ω
td(off)
Fall Time
nC
2.7
tf
ms
Notes
a. Pulse test; pulse width ≤ 300 ms, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
15
15
2.5 V
2V
6
1.5 V
3
1 V, 0.5 V
0
2
4
6
8
VDS -- Drain-to-Source Voltage (V)
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25_C
12
I D -- Drain Current (A)
I D -- Drain Current (A)
9
0
2-2
TC = --55_C
VGS = 4.5 thru 3 V
12
10
9
125_C
6
3
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VGS -- Gate-to-Source Voltage (V)
Document Number: 71364
S-21251—Rev. C, 05-Aug-02
Si5463EDC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
2000
0.20
C -- Capacitance (pF)
r DS(on) -- On-Resistance ( Ω )
0.25
VGS = 1.8 V
0.15
VGS = 2.5 V
0.10
VGS = 3.6 V
0.05
1500
Ciss
1000
Coss
500
VGS = 4.5 V
Crss
0.00
0
0
3
6
9
12
15
0
4
ID -- Drain Current (A)
Gate Charge
16
20
On-Resistance vs. Junction Temperature
1.6
VDS = 10 V
ID = 4.0 A
r DS(on) -- On-Resistance ( Ω)
(Normalized)
V GS -- Gate-to-Source Voltage (V)
12
VDS -- Drain-to-Source Voltage (V)
12
9
6
3
VGS = 4.5 V
ID = 4.0 A
1.4
1.2
1.0
0.8
0
0
5
10
15
20
0.6
--50
25
Qg -- Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
0
25
50
75
100
125
150
On-Resistance vs. Gate-to-Source Voltage
0.20
r DS(on) -- On-Resistance ( Ω )
TJ = 150_C
1
TJ = 25_C
0.1
0.01
0.0
--25
TJ -- Junction Temperature (_C)
20
10
I S -- Source Current (A)
8
0.15
ID = 4.0 A
0.10
0.05
0.00
0.2
0.4
0.6
0.8
1.0
VSD -- Source-to-Drain Voltage (V)
Document Number: 71364
S-21251—Rev. C, 05-Aug-02
1.2
0
2
4
6
8
VGS -- Gate-to-Source Voltage (V)
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2-3
Si5463EDC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
Single Pulse Power
50
40
ID = 250 mA
0.2
Power (W)
V GS(th) Variance (V)
0.3
0.1
0.0
30
20
10
--0.1
--0.2
--50
--25
0
25
50
75
100
125
0
10 --3
150
10 --2
10 --1
1
10
100
600
Time (sec)
TJ -- Temperature (_C)
Gate-Source Voltage vs. Gate Current
Gate-Source Voltage vs. Gate Current
1000
10,000
1,000
TA = 25_C
100
I GSS ( m A)
I GSS ( m A)
800
600
400
10
150_C
1
0.1
0.01
200
25_C
0.001
0
0
2
4
6
8
10
12
0.0001
0.10
VGS -- Gate-to-Source Voltage (V)
1
10
20
VGS -- Gate-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 80_C/W
0.02
3. TJM -- TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 --4
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2-4
10 --3
10 --2
10 --1
1
Square Wave Pulse Duration (sec)
10
100
600
Document Number: 71364
S-21251—Rev. C, 05-Aug-02
Si5463EDC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 --4
Document Number: 71364
S-21251—Rev. C, 05-Aug-02
10 --3
10 --2
10 --1
Square Wave Pulse Duration (sec)
1
10
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
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or in any other disclosure relating to any product.
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information provided herein to the maximum extent permitted by law. The product specifications do not expand or
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therein, which apply to these products.
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Document Number: 91000
Revision: 18-Jul-08
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