Si5463EDC Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) --20 20 rDS(on) (Ω) ID (A) 0.062 @ VGS = --4.5 V --5.1 0.068@ VGS = --3.6 V --4.9 0.085 @ VGS = --2.5 V --4.4 0.120 @ VGS = --1.8 V --3.7 S 1206-8 ChipFETt 1 D D G 5.4 kΩ D D D D G S Marking Code LB XX Lot Traceability and Date Code D Part # Code Bottom View P-Channel MOSFET Ordering Information: Si5463EDC-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 secs Steady State Drain-Source Voltage VDS --20 Gate-Source Voltage VGS 12 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 85_C Pulsed Drain Current ID IS TA = 25_C Maximum Power Dissipationa TA = 85_C Operating Junction and Storage Temperature Range PD V --3.8 --5.1 --3.7 --2.7 IDM Continuous Source Currenta --15 --1.9 --1.0 2.3 1.25 1.2 0.65 TJ, Tstg Unit A W --55 to 150 Soldering Recommendations (Peak Temperature)c, d _C 260 THERMAL RESISTANCE RATINGS Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Symbol t ≤ 5 sec Steady State Steady State RthJA RthJF Typical Maximum 45 55 84 100 20 25 Unit _C/W C/ Notes a. Surface Mounted on 1” x 1” FR4 Board. b. When using HBM. The MM rating is 300 V c. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 71364 S-21251—Rev. C, 05-Aug-02 www.vishay.com 2-1 Si5463EDC Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = --250 mA --0.45 Typ Max Unit Static Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain Source On Drain-Source On-State State Resistancea Diode Forward VDS = 0 V, VGS = 4.5 V Voltagea 1.5 VDS = --16 V, VGS = 0 V mA --1 --5 VDS = --16 V, VGS = 0 V, TJ = 85_C VDS --5 V, VGS = --4.5 V --15 A VGS = --4.5 V, ID = --4.0 A 0.051 0.062 VGS = --3.6 V, ID = --3.5 A 0.056 0.068 VGS = --2.5 V, ID = --3.0 A 0.070 0.085 VGS = --1.8 V, ID = --1.5 A 0.100 0.120 gfs VDS = --5 V, ID = --4.0 A 10 VSD IS = --1.0 A, VGS = 0 V --0.75 --1.2 9.7 15 rDS(on) DS( ) Forward Transconductancea V Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 1.4 Turn-On Delay Time td(on) 1.85 2.5 tr 3.2 4.5 1.9 2.5 3.2 4.5 Rise Time Turn-Off Delay Time VDS = --10 V, VGS = --4.5 V, ID = --4.0 A VDD = --10 V, RL = 10 Ω ID ≅ --1 A, VGEN = --4.5 V, RG = 6 Ω td(off) Fall Time nC 2.7 tf ms Notes a. Pulse test; pulse width ≤ 300 ms, duty cycle ≤ 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 15 15 2.5 V 2V 6 1.5 V 3 1 V, 0.5 V 0 2 4 6 8 VDS -- Drain-to-Source Voltage (V) www.vishay.com 25_C 12 I D -- Drain Current (A) I D -- Drain Current (A) 9 0 2-2 TC = --55_C VGS = 4.5 thru 3 V 12 10 9 125_C 6 3 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS -- Gate-to-Source Voltage (V) Document Number: 71364 S-21251—Rev. C, 05-Aug-02 Si5463EDC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current Capacitance 2000 0.20 C -- Capacitance (pF) r DS(on) -- On-Resistance ( Ω ) 0.25 VGS = 1.8 V 0.15 VGS = 2.5 V 0.10 VGS = 3.6 V 0.05 1500 Ciss 1000 Coss 500 VGS = 4.5 V Crss 0.00 0 0 3 6 9 12 15 0 4 ID -- Drain Current (A) Gate Charge 16 20 On-Resistance vs. Junction Temperature 1.6 VDS = 10 V ID = 4.0 A r DS(on) -- On-Resistance ( Ω) (Normalized) V GS -- Gate-to-Source Voltage (V) 12 VDS -- Drain-to-Source Voltage (V) 12 9 6 3 VGS = 4.5 V ID = 4.0 A 1.4 1.2 1.0 0.8 0 0 5 10 15 20 0.6 --50 25 Qg -- Total Gate Charge (nC) Source-Drain Diode Forward Voltage 0 25 50 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 0.20 r DS(on) -- On-Resistance ( Ω ) TJ = 150_C 1 TJ = 25_C 0.1 0.01 0.0 --25 TJ -- Junction Temperature (_C) 20 10 I S -- Source Current (A) 8 0.15 ID = 4.0 A 0.10 0.05 0.00 0.2 0.4 0.6 0.8 1.0 VSD -- Source-to-Drain Voltage (V) Document Number: 71364 S-21251—Rev. C, 05-Aug-02 1.2 0 2 4 6 8 VGS -- Gate-to-Source Voltage (V) www.vishay.com 2-3 Si5463EDC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 Single Pulse Power 50 40 ID = 250 mA 0.2 Power (W) V GS(th) Variance (V) 0.3 0.1 0.0 30 20 10 --0.1 --0.2 --50 --25 0 25 50 75 100 125 0 10 --3 150 10 --2 10 --1 1 10 100 600 Time (sec) TJ -- Temperature (_C) Gate-Source Voltage vs. Gate Current Gate-Source Voltage vs. Gate Current 1000 10,000 1,000 TA = 25_C 100 I GSS ( m A) I GSS ( m A) 800 600 400 10 150_C 1 0.1 0.01 200 25_C 0.001 0 0 2 4 6 8 10 12 0.0001 0.10 VGS -- Gate-to-Source Voltage (V) 1 10 20 VGS -- Gate-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 80_C/W 0.02 3. TJM -- TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 --4 www.vishay.com 2-4 10 --3 10 --2 10 --1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 71364 S-21251—Rev. C, 05-Aug-02 Si5463EDC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 --4 Document Number: 71364 S-21251—Rev. C, 05-Aug-02 10 --3 10 --2 10 --1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 2-5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1