Si5853DC Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET With Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.110 @ VGS = --4.5 V --3.6 --20 0.160 @ VGS = --2.5 V --3.0 0.240 @ VGS = --1.8 V --2.4 SCHOTTKY PRODUCT SUMMARY VKA (V) Vf (v) Diode Forward Voltage IF (A) 20 0.48 V @ 0.5 A 1.0 S K D A 1206-8 ChipFETt 1 A G K A K S D G D Marking Code JA XX Lot Traceability and Date Code Part # Code Bottom View P-Channel MOSFET Ordering Information: Si5853DC-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Drain-Source Voltage (MOSFET and Schottky) VDS Reverse Voltage (Schottky) VKA Gate-Source Voltage (MOSFET) VGS Continuous Drain Current (TJ = 150_C) (MOSFET)a TA = 25_C TA = 85_C Pulsed Drain Current (MOSFET) IS Average Foward Current (Schottky) Maximum Power Dissipation (Schottky)a Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b, c 20 8 --3.6 --2.7 --2.6 --1.9 --10 --1.8 --0.9 7 TA = 25_C 2.1 TA = 85_C 1.1 0.6 1.3 0.96 0.68 0.59 PD TA = 85_C TJ, Tstg A 1.0 IFM TA = 25_C Unit V 8 IF Pulsed Foward Current (Schottky) Steady State --20 IDM Continuous Source Current (MOSFET Diode Conduction)a Maximum Power Dissipation (MOSFET)a ID 5 sec 1.1 W --55 to 150 260 _C Notes a. Surface Mounted on 1” x1” FR4 Board. b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 71239 S-21251—Rev. B, 05-Aug-02 www.vishay.com 2-1 Si5853DC Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Device t ≤ 5 sec Junction-to-Ambient J ti t A bi ta Symbol Typical Maximum MOSFET 50 60 Schottky 77 95 90 110 110 130 30 40 33 40 MOSFET St d St Steady State t Junction to Foot Junction-to-Foot Steady State RthJA Schottky MOSFET Schottky RthJF Unit _C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VDS = VGS, ID = --250 mA --0.45 Typ Max Unit Static Gate Threshold Voltage Gate-Body Leakage VGS(th) IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea V VDS = 0 V, VGS = 8 V 100 VDS = --16 V, VGS = 0 V --1 VDS = --16 V, VGS = 0 V, TJ = 85_C --5 VDS ≤ --5 V, VGS = --4.5 V --10 nA mA A VGS = --4.5 V, ID = --2.7 A 0.095 0.110 rDS(on) VGS = --2.5 V, ID = --2.2 A 0.137 0.160 VGS = --1.8 V, ID = --1 A 0.205 0.240 gfs VDS = --10 V, ID = --2.7 A 7 VSD IS = --0.9 A, VGS = 0 V --0.8 --1.2 4.4 6.5 Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 0.65 Turn-On Delay Time td(on) 16 25 30 45 30 45 27 40 20 40 Typ Max Rise Time tr Turn-Off Delay Time td(off) Fall Time tf Source-Drain Reverse Recovery Time trr 1.4 VDS = --10 V,, VGS = --4.5 V,, ID = --2.7 A VDD = --10 V, RL = 10 Ω ID ≅ --1 A, VGEN = --4.5 V, RG = 6 Ω IF = --0.9 A, di/dt = 100 A/ms nC ns Notes a. Pulse test; pulse width ≤ 300 ms, duty cycle ≤ 2%. b. Guaranteed by design, not subject to production testing. SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Forward Voltage Drop VF Maximum Reverse Leakage g Current Irm Junction Capacitance www.vishay.com 2-2 CT Test Condition Min IF = 0.5 A 0.42 0.48 IF = 0.5 A, TJ = 125_C 0.33 0.4 0.100 Vr = 20 V 0.002 Vr = 20 V, TJ = 85_C 0.10 1 Vr = 20 V, TJ = 125_C 1.5 10 Vr = 10 V 31 Unit V mA pF Document Number: 71239 S-21251—Rev. B, 05-Aug-02 Si5853DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET Output Characteristics Transfer Characteristics 10 10 VGS = 5 thru 3 V TC = --55_C 2.5 V 8 I D -- Drain Current (A) I D -- Drain Current (A) 8 6 2V 4 2 1.5 V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 25_C 6 125_C 4 2 0 0.0 4.0 0.5 1.0 1.5 2.0 2.5 VDS -- Drain-to-Source Voltage (V) VGS -- Gate-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 0.6 3.0 800 0.5 C -- Capacitance (pF) r DS(on) -- On-Resistance ( Ω ) VGS = 1.8 V 0.4 0.3 VGS = 2.5 V 0.2 Ciss 600 400 200 VGS = 4.5 V Coss 0.1 0.0 Crss 0 0 2 4 6 8 10 0 4 ID -- Drain Current (A) 12 16 20 VDS -- Drain-to-Source Voltage (V) Gate Charge On-Resistance vs. Junction Temperature 5 1.6 VDS = 10 V ID = 2.7 A r DS(on) -- On-Resistance (Ω) (Normalized) V GS -- Gate-to-Source Voltage (V) 8 4 3 2 1 VGS = 4.5 V ID = 2.7 A 1.4 1.2 1.0 0.8 0 0 1 2 3 Qg -- Total Gate Charge (nC) Document Number: 71239 S-21251—Rev. B, 05-Aug-02 4 5 0.6 --50 --25 0 25 50 75 100 125 150 TJ -- Junction Temperature (_C) www.vishay.com 2-3 Si5853DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.4 r DS(on) -- On-Resistance ( Ω ) I S -- Source Current (A) 10 TJ = 150_C TJ = 25_C ID = 2.7 A 0.3 0.2 0.1 0.0 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 1 VSD -- Source-to-Drain Voltage (V) 2 4 5 VGS -- Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power 0.4 50 0.3 40 ID = 250 mA 0.2 Power (W) V GS(th) Variance (V) 3 0.1 30 20 0.0 10 --0.1 --0.2 --50 --25 0 25 50 75 100 125 150 0 10 --4 10 --3 10 --2 TJ -- Temperature (_C) 10 --1 1 10 100 600 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 90_C/W 3. TJM -- TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 --4 www.vishay.com 2-4 10 --3 10 --2 10 --1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 71239 S-21251—Rev. B, 05-Aug-02 Si5853DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 --4 10 --3 10 --2 10 --1 Square Wave Pulse Duration (sec) 1 10 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) SCHOTTKY Reverse Current vs. Junction Temperature Forward Voltage Drop 5 1 I F -- Forward Current (A) I R -- Reverse Current (mA) 20 10 0.1 20 V 0.01 10 V 0.001 0.0001 TJ = 150_C 1 TJ = 25_C 0.1 0 25 50 75 100 125 150 0 TJ -- Junction Temperature (_C) 0.4 0.6 0.8 1.0 VF -- Forward Voltage Drop (V) Capacitance 150 CT -- Junction Capacitance (pF) 0.2 120 90 60 30 0 0 4 8 12 16 20 VKA -- Reverse Voltage (V Document Number: 71239 S-21251—Rev. B, 05-Aug-02 www.vishay.com 2-5 Si5853DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) SCHOTTKY Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.1 0.2 Notes: 0.1 PDM t1 t2 1. Duty Cycle, D = 0.05 0.02 t1 t2 2. Per Unit Base = RthJA = 110_C/W 3. TJM -- TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 --4 10 --3 10 --2 10 --1 1 100 10 600 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 --4 www.vishay.com 2-6 10 --3 10 --2 10 --1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71239 S-21251—Rev. B, 05-Aug-02