Si5461EDC Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.045 @ VGS = --4.5 V --6.2 --20 0.060 @ VGS = --2.5 V --5.4 0.082 @ VGS = --1.8 V --4.6 S 1206-8 ChipFETt 1 D D G 5.4 kΩ D D D D G S Marking Code LA XX Lot Traceability and Date Code D Part # Code Bottom View P-Channel MOSFET Ordering Information: Si5461EDC-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 secs Steady State Drain-Source Voltage VDS --20 Gate-Source Voltage VGS 12 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 85_C Pulsed Drain Current ID IS TA = 25_C Maximum Power Dissipationa TA = 85_C Operating Junction and Storage Temperature Range PD V --4.5 --6.2 --4.5 --3.2 IDM Continuous Source Currenta --20 --2.1 --1.1 2.5 1.3 1.3 0.7 TJ, Tstg Unit A W --55 to 150 Soldering Recommendations (Peak Temperature)c, d _C 260 THERMAL RESISTANCE RATINGS Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Symbol t ≤ 5 sec Steady State Steady State RthJA RthJF Typical Maximum 40 50 80 95 15 20 Unit _C/W C/ Notes a. Surface Mounted on 1” x 1” FR4 Board. b. When using HBM. The MM rating is 300 V. c. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 71413 S-21251—Rev. C, 05-Aug-02 www.vishay.com 2-1 Si5461EDC Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = --250 mA --0.45 Typ Max Unit Static Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Diode Forward VDS = 0 V, VGS = 4.5 V Voltagea 1.5 VDS = --16 V, VGS = 0 V mA --1 --5 VDS = --16 V, VGS = 0 V, TJ = 85_C VDS --5 V, VGS = --4.5 V --20 A VGS = --4.5 V, ID = --5.0 A 0.037 0.045 VGS = --2.5 V, ID = --4.0 A 0.050 0.060 VGS = --1.8 V, ID = --2 A 0.066 0.082 gfs VDS = --5 V, ID = --5.0 A 12 VSD IS = --1.1 A, VGS = 0 V --0.7 --1.2 12.5 20 rDS(on) Forward Transconductancea V Ω S V Dynamicb Total Gate Charge Qg VDS = --10 V, VGS = --4.5 V, ID = --5.0 A nC Gate-Source Charge Qgs Gate-Drain Charge Qgd 4.0 Turn-On Delay Time td(on) 2.5 3.5 4.5 8.0 27 40 15 25 Rise Time tr Turn-Off Delay Time VDD = --10 V, RL = 10 Ω ID ≅ --1 A, VGEN = --4.5 V, RG = 6 Ω td(off) Fall Time 2.0 tf mS Notes a. Pulse test; pulse width ≤ 300 ms, duty cycle ≤ 2%.m b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 Transfer Characteristics 20 VGS = 4.5 thru 2.5 V TC = --55_C 16 2V I D -- Drain Current (A) I D -- Drain Current (A) 16 12 8 1.5 V 4 0.5 V 1V 6 8 0 0 2 4 VDS -- Drain-to-Source Voltage (V) www.vishay.com 2-2 10 25_C 12 125_C 8 4 0 0.0 0.5 1.0 1.5 2.0 2.5 VGS -- Gate-to-Source Voltage (V) Document Number: 71413 S-21251—Rev. C, 05-Aug-02 Si5461EDC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current Capacitance 3000 2500 0.12 0.09 C -- Capacitance (pF) r DS(on) -- On-Resistance ( Ω ) 0.15 VGS = 1.8 V VGS = 2.5 V 0.06 VGS = 4.5 V 0.03 Ciss 2000 1500 1000 Coss 500 Crss 0.00 0 0 4 8 12 16 20 0 4 ID -- Drain Current (A) Gate Charge 16 20 On-Resistance vs. Junction Temperature 1.6 VDS = 10 V ID = 5.0 A 10 r DS(on) -- On-Resistance ( Ω) (Normalized) V GS -- Gate-to-Source Voltage (V) 12 VDS -- Drain-to-Source Voltage (V) 12 8 6 4 VGS = 4.5 V ID = 5.0 A 1.4 1.2 1.0 0.8 2 0 0 5 10 15 20 25 0.6 --50 30 --25 Qg -- Total Gate Charge (nC) Source-Drain Diode Forward Voltage 25 50 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 0.30 r DS(on) -- On-Resistance ( Ω ) 10 TJ = 150_C 1 TJ = 25_C 0.1 0.01 0.0 0 TJ -- Junction Temperature (_C) 100 I S -- Source Current (A) 8 0.25 0.20 ID = 5.0 A 0.15 0.10 0.05 0.00 0.2 0.4 0.6 0.8 1.0 VSD -- Source-to-Drain Voltage (V) Document Number: 71413 S-21251—Rev. C, 05-Aug-02 1.2 0 1 2 3 4 5 6 7 8 VGS -- Gate-to-Source Voltage (V) www.vishay.com 2-3 Si5461EDC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 Single Pulse Power 50 40 ID = 250 mA 0.2 Power (W) V GS(th) Variance (V) 0.3 0.1 0.0 30 20 10 --0.1 --0.2 --50 --25 0 25 50 75 100 125 150 0 10 --3 10 --2 10 --1 1 10 100 600 Time (sec) TJ -- Temperature (_C) Gate-Source Voltage vs. Gate Current Gate-Source Voltage vs. Gate Current 1000 10,000 1,000 800 TA = 25_C 100 10 600 1 400 IGSS (mA) 150_C IGSS (mA) 0.1 25_C 0.01 200 0.001 0 0 2 4 6 8 10 12 0.0001 0.10 VGS -- Gate-to-Source Voltage (V) 1 10 100 VGS -- Gate-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 80_C/W 0.02 3. TJM -- TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 --4 www.vishay.com 2-4 10 --3 10 --2 10 --1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 71413 S-21251—Rev. C, 05-Aug-02 Si5461EDC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 --4 Document Number: 71413 S-21251—Rev. C, 05-Aug-02 10 --3 10 --2 10 --1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 2-5