VISHAY SI5445DC-T1

Si5445DC
Vishay Siliconix
P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
--8
rDS(on) (Ω)
ID (A)
0.035 @ VGS = --4.5 V
7.1
0.047 @ VGS = --2.5 V
6.2
0.062 @ VGS = --1.8 V
5.7
S
1206-8 ChipFETt
1
D
D
G
D
D
D
D
G
S
Marking Code
BC XX
Lot Traceability
and Date Code
Part # Code
D
Bottom View
P-Channel MOSFET
Ordering Information: Si5445DC-T1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Drain-Source Voltage
VDS
--8
Gate-Source Voltage
VGS
8
Continuous Drain Current (TJ = 150_C)a
TA = 25_C
TA = 85_C
Pulsed Drain Current
ID
IS
TA = 25_C
Maximum Power Dissipationa
TA = 85_C
Operating Junction and Storage Temperature Range
PD
V
5.2
7.1
5.2
3.7
IDM
Continuous Source Currenta
20
--2.1
--1.1
2.5
1.3
1.3
0.7
TJ, Tstg
Unit
A
W
--55 to 150
Soldering Recommendations (Peak Temperature)b, c
_C
260
THERMAL RESISTANCE RATINGS
Parameter
M i
Maximum
JJunction-to-Ambient
ti t A bi ta
Maximum Junction-to-Foot (Drain)
Symbol
t ≤ 5 sec
Steady State
Steady State
RthJA
RthJF
Typical
Maximum
40
50
80
95
15
20
Unit
_C/W
C/
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71063
S-21251—Rev. B, 05-Aug-02
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2-1
Si5445DC
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
VGS(th)
VDS = VGS, ID = --250 mA
--0.45
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Diode Forward
VDS = 0 V, VGS = 8 V
Voltagea
nA
100
VDS = --6.4 V, VGS = 0 V
--1
VDS = --6.4 V, VGS = 0 V, TJ = 85_C
--5
VDS --5 V, VGS = --4.5 V
mA
--20
A
VGS = --4.5 V, ID = --5.2 A
0.030
0.035
VGS = --2.5 V, ID = --4.5 A
0.040
0.047
VGS = --1.8 V, ID = --2 A
0.052
0.062
gfs
VDS = --5 V, ID = --5.2 A
18
VSD
IS = --1.1 A, VGS = 0 V
--0.8
--1.2
17
26
rDS(on)
Forward Transconductancea
V
Ω
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
2.6
Turn-On Delay Time
td(on)
15
tr
45
70
110
165
65
100
30
60
Rise Time
Turn-Off Delay Time
VDS = --4 V, VGS = --4.5 V, ID = --5.2 A
VDD = --4 V, RL = 4 Ω
ID ≅ --1 A, VGEN = --4.5 V, RG = 6 Ω
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
2.8
IF = --1.1 A, di/dt = 100 A/ms
nC
25
ns
Notes
a. Pulse test; pulse width ≤ 300 ms, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
20
20
VGS = 5 thru 2.5 V
TC = --55_C
16
2V
I D -- Drain Current (A)
I D -- Drain Current (A)
16
12
8
1.5 V
4
25_C
12
125_C
8
4
1V
0
0.0
0.5
1.0
1.5
2.0
2.5
VDS -- Drain-to-Source Voltage (V)
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2-2
3.0
0
0.0
0.5
1.0
1.5
2.0
2.5
VGS -- Gate-to-Source Voltage (V)
Document Number: 71063
S-21251—Rev. B, 05-Aug-02
Si5445DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
3000
0.08
Ciss
2500
VGS = 1.8 V
0.06
C -- Capacitance (pF)
r DS(on) -- On-Resistance ( Ω )
0.10
VGS = 2.5 V
0.04
VGS = 4.5 V
0.02
2000
1500
Coss
1000
500
Crss
0.00
0
0
4
8
12
16
0
20
2
ID -- Drain Current (A)
6
8
VDS -- Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
5
1.6
VDS = 4 V
ID = 5.2 A
r DS(on) -- On-Resistance (Ω)
(Normalized)
V GS -- Gate-to-Source Voltage (V)
4
4
3
2
1
VGS = 4.5 V
ID = 5.2 A
1.4
1.2
1.0
0.8
0
0
4
8
12
16
0.6
--50
20
--25
0
Qg -- Total Gate Charge (nC)
25
50
75
100
125
150
TJ -- Junction Temperature (_C)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.10
20
r DS(on) -- On-Resistance ( Ω )
I S -- Source Current (A)
TJ = 150_C
10
TJ = 25_C
1
0.0
0.08
ID = 5.2 A
0.06
0.04
0.02
0.00
0.2
0.4
0.6
0.8
1.0
VSD -- Source-to-Drain Voltage (V)
Document Number: 71063
S-21251—Rev. B, 05-Aug-02
1.2
0
1
2
3
4
5
VGS -- Gate-to-Source Voltage (V)
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Si5445DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.4
50
40
ID = 250 mA
0.2
Power (W)
V GS(th) Variance (V)
0.3
0.1
30
20
0.0
10
--0.1
--0.2
--50
--25
0
25
50
75
100
125
150
0
10 --3
10 --2
10 --1
TJ -- Temperature (_C)
1
10
100
600
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 80_C/W
3. TJM -- TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10 --4
10 --3
10 --2
10 --1
1
Square Wave Pulse Duration (sec)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 --4
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2-4
10 --3
10 --2
10 --1
Square Wave Pulse Duration (sec)
1
10
Document Number: 71063
S-21251—Rev. B, 05-Aug-02