VISHAY SI5915DC-T1

Si5915DC
Vishay Siliconix
Dual P-Channel 1.8-V (G-S) MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFET
D Low Thermal Resistance
D 40% Smaller Footprint Than TSOP-6
VDS (V)
rDS(on) (Ω)
ID (A)
0.070 @ VGS = --4.5 V
--4.6
--8
0.108 @ VGS = --2.5 V
--3.7
APPLICATIONS
0.162 @ VGS = --1.8 V
--3.0
D Load Switch or PA Switch for Portable
Devices
S1
S2
1206-8 ChipFETt
1
S1
D1
G1
G1
D1
G2
S2
D2
G2
D2
Marking Code
DE XX
Lot Traceability
and Date Code
D1
Part # Code
Bottom View
D2
P-Channel MOSFET
P-Channel MOSFET
Ordering Information: Si5915DC-T1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Drain-Source Voltage
VDS
--8
Gate-Source Voltage
VGS
8
Continuous Drain Current (TJ = 150_C)a
TA = 25_C
TA = 85_C
Pulsed Drain Current
ID
IS
TA = 25_C
Maximum Power Dissipationa
TA = 85_C
Operating Junction and Storage Temperature Range
PD
V
--3.4
--4.6
--3.3
--2.5
IDM
Continuous Source Current (Diode Conduction)a
--10
--1.8
--0.9
2.1
1.1
1.1
0.6
TJ, Tstg
Unit
A
W
--55 to 150
Soldering Recommendations (Peak Temperature)b, c
_C
260
THERMAL RESISTANCE RATINGS
Parameter
M i
Maximum
JJunction-to-Ambient
ti t A bi ta
Maximum Junction-to-Foot (Drain)
Symbol
t ≤ 5 sec
Steady State
Steady State
RthJA
RthJF
Typical
Maximum
50
60
90
110
30
40
Unit
_C/W
C/
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 70693
S-21251—Rev. B, 05-Aug-02
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2-1
Si5915DC
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
VGS(th)
VDS = VGS, ID = --250 mA
--0.45
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Diode Forward
VDS = 0 V, VGS = 8 V
Voltagea
100
VDS = --6.4 V, VGS = 0 V
--1
VDS = --6.4 V, VGS = 0 V, TJ = 85_C
--5
VDS  --5 V, VGS = --4.5 V
--10
nA
mA
A
VGS = --4.5 V, ID = --3.4 A
0.058
0.070
VGS = --2.5 V, ID = --2.7 A
0.090
0.108
VGS = --1.8 V, ID = --1 A
0.131
0.162
gfs
VDS = --5 V, ID = --3.4 A
8
VSD
IS = --0.9 A, VGS = 0 V
--0.8
--1.2
5.9
9
rDS(on)
Forward Transconductancea
V
Ω
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
1.4
Turn-On Delay Time
td(on)
20
30
tr
70
110
35
55
35
55
30
60
Rise Time
Turn-Off Delay Time
VDS = --4 V, VGS = --4.5 V, ID = --3.4 A
VDD = --4 V, RL = 4 Ω
ID ≅ --1 A, VGEN = --4.5 V, RG = 6 Ω
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
1.3
IF = --0.9 A, di/dt = 100 A/ms
nC
ns
Notes
a. Pulse test; pulse width ≤ 300 ms, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
10
10
TC = --55_C
VGS = 5 thru 2.5 V
6
4
1.5 V
2
0
0
1
2
3
4
VDS -- Drain-to-Source Voltage (V)
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2-2
25_C
8
2V
I D -- Drain Current (A)
I D -- Drain Current (A)
8
5
125_C
6
4
2
0
0.0
0.5
1.0
1.5
2.0
2.5
VGS -- Gate-to-Source Voltage (V)
Document Number: 70693
S-21251—Rev. B, 05-Aug-02
Si5915DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.25
1000
0.20
C -- Capacitance (pF)
r DS(on) -- On-Resistance ( Ω )
VGS = 1.8 V
0.15
VGS = 2.5 V
0.10
VGS = 4.5 V
0.05
800
Ciss
600
400
200
0.00
0
0
2
4
6
8
10
0
2
ID -- Drain Current (A)
4
6
8
VDS -- Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
1.4
5
VDS = 4 V
ID = 3.4 A
r DS(on) -- On-Resistance (Ω)
(Normalized)
V GS -- Gate-to-Source Voltage (V)
Coss
Crss
4
3
2
1
VGS = 4.5 V
ID = 3.4 A
1.3
1.2
1.1
1.0
0.9
0
0
1
2
3
4
5
6
0.8
--50
7
--25
0
Qg -- Total Gate Charge (nC)
50
75
100
125
150
TJ -- Junction Temperature (_C)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.25
r DS(on) -- On-Resistance ( Ω )
I S -- Source Current (A)
10
TJ = 150_C
TJ = 25_C
1
0.0
25
0.20
ID = 1 A
0.15
ID = 3.4 A
0.10
0.05
0.00
0.2
0.4
0.6
0.8
1.0
VSD -- Source-to-Drain Voltage (V)
Document Number: 70693
S-21251—Rev. B, 05-Aug-02
1.2
1.4
0
1
2
3
4
5
VGS -- Gate-to-Source Voltage (V)
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2-3
Si5915DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.3
50
40
ID = 250 mA
0.1
Power (W)
V GS(th) Variance (V)
0.2
0.0
30
20
10
--0.1
--0.2
--50
--25
0
25
50
75
100
125
150
0
10 --4
10 --3
10 --2
TJ -- Temperature (_C)
10 --1
1
10
100
600
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 90_C/W
3. TJM -- TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10 --4
10 --3
10 --2
10 --1
1
Square Wave Pulse Duration (sec)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 --4
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2-4
10 --3
10 --2
10 --1
Square Wave Pulse Duration (sec)
1
10
Document Number: 70693
S-21251—Rev. B, 05-Aug-02