MBRA120ET3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. • • • • Compact Package with J−Bend Leads Ideal for Automated Handling Highly Stable Oxide Passivated Junction Guardring for Over−Voltage Protection Optimized for Low Leakage Current http://onsemi.com SCHOTTKY BARRIER RECTIFIER 1 AMPERE 20 VOLTS Mechanical Characteristics: • • • • • • • • • • Case: Molded Epoxy Epoxy Meets UL94, VO at 1/8″ Weight: 70 mg (approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Polarity: Polarity Band Indicates Cathode Lead Available in 12 mm Tape, 5000 Units per 13 inch Reel Device Meets MSL1 Requirements ESD Ratings: Machine Model, C (>400 V) Human Body Model, 3B (>8000 V) Marking: B1E2 MAXIMUM RATINGS Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 20 V Average Rectified Forward Current (At Rated VR, TC = 125°C) IO 1.0 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 40 A Storage Temperature Tstg −55 to +150 °C TJ −55 to +150 °C dv/dt 10,000 V/s Operating Junction Temperature Voltage Rate of Change (Rated VR, TJ = 25°C) Semiconductor Components Industries, LLC, 2003 December, 2003 − Rev. 2 1 MARKING DIAGRAM B1E2 SMA CASE 403D PLASTIC B1E2 = Device Code ORDERING INFORMATION Device Package Shipping† MBRA120ET3 SMA 5000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: MBRA120ET3/D MBRA120ET3 THERMAL CHARACTERISTICS Characteristic Thermal Resistance − Junction−to−Lead Thermal Resistance − Junction−to−Ambient Symbol 5 mm x 5 mm (Note 2) 1 Inch x 1/2 inch (Note 3) RθJL RθJA 34 138 20 77 °C/W VF TJ = 25°C TJ = 100°C V 0.455 0.530 0.595 0.360 0.455 0.540 TJ = 25°C TJ = 100°C 10 1.0 0.5 1600 500 300 Unit ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 1), See Figure 2 (IF = 0.1 A) (IF = 1.0 A) (IF = 2.0 A) Maximum Instantaneous Reverse Current, See Figure 4 IR (VR = 20 V) (VR = 10 V) (VR = 5.0 V) A IF, INSTANTANEOUS FORWARD CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (A) 1. Pulse Test: Pulse Width ≤ 250 µs, Duty Cycle ≤ 2%. 2. Mounted on a Pad Size of 5 mm x 5 mm, PC Board FR4 (2 pads). 3. Mounted on a Pad Size of 1 inch x 1/2 inch, PC Board FR4 (2 pads). 10 150°C 125°C 100°C 25°C −40°C 1 0.1 0.1 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 VF, INSTANTANEOUS VOLTAGE (VOLTS) 10 150°C 100°C 25°C 1 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 VF, INSTANTANEOUS VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 1E−02 1E−02 150°C IR, REVERSE CURRENT (A) IR, REVERSE CURRENT (A) 150°C 1E−03 125°C 1E−04 100°C 75°C 1E−05 1E−06 25°C 1E−07 1E−08 0 2 4 6 8 10 12 14 16 18 20 1E−03 100°C 1E−04 1E−05 1E−06 25°C 1E−07 1E−08 0 VR, REVERSE VOLTAGE (VOLTS) 2 4 6 8 10 12 14 16 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Maximum Reverse Current Figure 3. Typical Reverse Current http://onsemi.com 2 18 20 PFO, AVERAGE POWER DISSIPATION (WATTS) IF, AVERAGE FORWARD CURRENT (AMPS) MBRA120ET3 1.8 dc 1.6 1.4 1.2 SQUARE WAVE 1 0.8 0.6 0.4 0.2 0 0 20 40 80 60 100 120 140 160 TL, LEAD TEMPERATURE (°C) 0.7 0.6 dc 0.5 SQUARE WAVE 0.4 0.3 0.2 0.1 0 0 0.2 0.1 0.6 0.8 1 1.2 1.4 1.6 Figure 6. Forward Power Dissipation D = 0.5 0.3 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 T, TIME (sec) Figure 7. Thermal Resistance 1000 C, CAPACITANCE (pF) R (T) , TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 5. Current Derating 1 0.4 IO, AVERAGE FORWARD CURRENT (AMPS) TJ = 25°C 100 10 0 2 4 6 8 10 12 14 16 18 VR, REVERSE VOLTAGE (VOLTS) Figure 8. Typical Junction Capacitance http://onsemi.com 3 20 100 1000 MBRA120ET3 PACKAGE DIMENSIONS SMA CASE 403D−02 ISSUE A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 403D−01 OBSOLETE, NEW STANDARD IS 403D−02. S A D DIM A B C D H J K S B POLARITY INDICATOR OPTIONAL AS NEEDED INCHES MIN MAX 0.160 0.180 0.090 0.115 0.075 0.095 0.050 0.064 0.002 0.006 0.006 0.016 0.030 0.060 0.190 0.220 MILLIMETERS MIN MAX 4.06 4.57 2.29 2.92 1.91 2.41 1.27 1.63 0.05 0.15 0.15 0.41 0.76 1.52 4.83 5.59 C K J H SOLDERING FOOTPRINT* 0.157 4.0 0.0787 2.0 0.0787 2.0 inches mm SMA FOOTPRINT *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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