SavantIC Semiconductor Product Specification 2SC2556 2SC2556A Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package ·High VCBO ·Low collector saturation voltage ·High transition frequency APPLICATIONS ·Audio frequency output amplifier PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO PARAMETER CONDITIONS VALUE 2SC2556 130 2SC2556A 180 2SC2556 40 2SC2556A 50 Collector-base voltage V Collector- emitter voltage Emitter-base voltage UNIT V Open collector 5 V 1 A 1.5 A 1.2 W IC Collector current ICM Collector current-peak PC Collector power dissipation Tj Junction temperature 150 Tstg Storage temperature -55 +150 TC=25 SavantIC Semiconductor Product Specification 2SC2556 2SC2556A Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SC2556 V(BR)CEO V(BR)CBO Collector-emitter breakdown voltage TYP. MAX IC=2mA ;IB=0 V 2SC2556A 50 2SC2556 130 Collector-base breakdown voltage UNIT 40 IC=10µA ;IE=0 V 180 2SC2556A V(BR)EBO MIN Emitter-base breakdown voltage IE=10µA ;IC=0 Collector-emitter saturation voltage IC=500mA ;IB=50mA 0.5 V ICBO Collector cut-off current VCB=120V; IE=0 0.1 µA hFE-1 DC current gain IC=1A ; VCE=0.5V 150 hFE-2 DC current gain IC=0.5A ; VCE=2V 150 COB Output capacitance IE=0; VCB=20V;f=1MHz fT Transition frequency IC=50mA ; VCE=10V VCEsat 2 5 V 350 30 200 pF MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SC2556 2SC2556A