SavantIC Semiconductor Product Specification 2SB1657 Silicon PNP Power Transistors DESCRIPTION ·With TO-126 package ·Low collector saturation voltage ·High DC current gain APPLICATIONS ·For audio frequency amplifier and switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -30 V VCEO Collector-emitter voltage Open base -30 V VEBO Emitter-base voltage Open collector -6 V IC Collector current (DC) -5 A ICM Collector current-Peak -8 A IB Base current (DC) -1 A PT Total power dissipation Ta=25 0.1 TC=25 10 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SB1657 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0 VCEsat-1 Collector-emitter saturation voltage IC=-0.5A; IB=-25mA -0.15 V VCEsat-2 Collector-emitter saturation voltage IC=-1A; IB=-50mA -0.25 V VCEsat-3 Collector-emitter saturation voltage IC=-2A; IB=-100mA -0.40 V VCEsat-4 Collector-emitter saturation voltage IC=-3A; IB=-75mA -1.0 V Base-emitter saturation voltage IC=-1A; IB=-50mA -1.5 V ICBO Collector cut-off current VCB=-30V; IE=0 -0.1 µA IEBO Emitter cut-off current VEB=-6V; IC=0 -0.1 µA hFE-1 DC current gain IC=-0.5A ; VCE=-2V 150 hFE-2 DC current gain IC=-3A ; VCE=-2V 70 Transition frequency IC=-50mA ; VCE=-10V 75 MHz Collector output capacitance IE=0;f=1MHz ; VCB=-10V 60 pF VBEsat fT COB CONDITIONS 2 MIN TYP. MAX -30 UNIT V 600 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SB1657